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1/5

Symbol UnitsVDS VVGS V

T A=25C

T A=70C

IDMVKA V

T A=25C

T A=70C

IFMT A=25C

T A=70CI AR AE AR mJ

TJ , TSTG C

Absolute Max imum Ratings T A=25C unless otherwise noted

Parameter MOSFET Schottky

Gate-Source Voltage 20

Drain-Source Voltage 30

A9.3

Pulsed Drain Current B 50

Continuous Drain Current AFID

11

Schottky reverse voltage 30

Continuous Forward Current AFIF

4.4 A3.2

Pulsed Diode Forward Current B 30

Junction and Storage Temperature Range -55 to 150 -55 to 150

Power DissipationP

D

3 3

W2 2 Avalanche Current B

Repetitive avalanche energy 0.3mH B17

43

AO4702N-Channel Enhancement Mode Field Effect Transistor withSchottky Diode

Features

VDS (V) = 30VID = 11A (V GS = 10V)R DS(ON) < 16m (VGS = 10V)R DS(ON) < 25m (VGS = 4.5V)

SCHOTTKYVDS (V) = 30V, I F = 3A, V F

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Symbol Typ Max31 4059 75

RJL 16 24

Symbol Typ Max36 4067 75

RJL 25 30

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICALCOMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Thermal Characteristics : MOSFETParameter UnitsMaximum Junction-to-Ambient A t 10s RJA

C/W

Steady-State C/W

C/WMaximum Junction-to-Ambient A Steady-State

Thermal Characteristics: Schottky

Maximum Junction-to-Lead C Steady-State C/W

Maximum Junction-to-Lead C Steady-State C/W

Parameter UnitsMaximum Junction-to-Ambient A t 10s RJA

C/WMaximum Junction-to-Ambient A

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment withT A=25C. The value in any given application depends on the user's specific board design.B: Repetitive rating, pulse width limited by junction temperature.C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using

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Symbol Min Typ Max Units

BVDSS 30 V

0.007 0.05

3.2 10

12 20IGSS 100 nAVGS(th) 1 1.8 3 VID(ON) 40 A

13.4 16TJ=125C 16.8 21

20 25 m

gFS 25 SVSD 0.45 0.5 VIS

5 A

C iss 1040 1250 pFCoss 212 pFC rss 121 170 p FRg 0.35 0.7 0.85

Qg(10V) 19.8 24 nCQg(4.5V) 9.8 12 nCQgs 2.5 nCQgd 3.5 nCtD(on) 4.5 7 ns

tr 3.9 7 nstD(off) 17.4 30 nstf 3.2 5.7 ns

trr 19 23 nsQ rr 9 11 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-Off Fall Time

VGS =10V, I D=11A

Turn-On DelayTime

DYNAMIC PARAMETERS

VGS =10V, V DS=15V, I D=11A

Total Gate Charge

Gate Drain Charge

Reverse Transfer Capacitance

VGS =0V, V DS =15V, f=1MHz

SWITCHING PARAMETERS

VGS =10V, V DS=15V, R L=1.35 ,R GEN =3

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current(Set by Schottky leakage)

Gate-Body leakage current

ID=250 A, V GS =0V

VR=30V

VDS =0V, V GS = 20V

Gate resistance

IS=1A,V GS =0V

VDS =5V, I D=11A

Electrical Characteristics (T J =25C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

Body Diode + Schottky Reverse Recovery Time

VGS =0V, V DS =0V, f=1MHz

VR=30V, T J =125C

VR=30V, T J =150C

VDS =VGS ID=250 A

Maximum Body-Diode + Schottky Continuous Current

Input Capacitance

Static Drain-Source On-Resistance

Forward Transconductance

Diode + Schottky Forward Voltage

IDSS mA

Gate Threshold Voltage

RDS(ON)m

VGS =4.5V, I D=8A

Output Capacitance (FET+Schottky)

Body Diode + Schottky Reverse Recovery Charge IF=11A, dI/dt=100A/ s

On state drain current V GS =4.5V, V DS=5V

IF=11A, dI/dt=100A/ s

Total Gate Charge

Gate Source Charge

Turn-On Rise TimeTurn-Off DelayTime

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment withT A=25C. The value in any given application depends on the user's specific board design.B: Repetitive rating, pulse width limited by junction temperature.C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC

0

5

10

15

20

25

30

0 1 2 3 4 5

VDS (Volts)Fig 1: On-Region Characteristic s

I D ( A )

VGS =3V

3.5V

4V

4.5V

10V

0

4

8

12

16

20

1.5 2 2.5 3 3.5 4

VGS (Volts)Figure 2: Transfer Characteristics

I D ( A )

10

12

14

16

18

20

22

24

0 5 10 15 20

ID (A)Figure 3: On-Resistance vs. Drain Curr ent and

Gate Voltage

R D S ( O N )

( m

)

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

0.0 0.2 0.4 0.6 0.8 1.0

VSD (Volts)Figure 6: Body-Diode Characteristics

I S ( A )

25

125C

FET+SCHOTTKY

0.8

1

1.2

1.4

1.6

0 25 50 75 100 125 150 175

Temperature (C)Figure 4: On-Resistance vs. Junct ion Temperature

N o r m a l

i z e d

O n - R e s

i s t a n c e V

GS =10V

VGS =4.5V

10

20

30

40

50

60

2 4 6 8 10VGS (Volts)

Figure 5: On-Resistance vs . Gate-Source Volt age

R D S ( O N )

( m

)

25C

125C

VDS =5V

VGS =4.5V

VGS =10V

ID=11A

25C

125C

ID=11A

Alpha & Omega Semi conductor, L td . www.aosmd.com

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC

0

2

4

6

8

10

0 4 8 12 16 20

Q g (nC)Figure 7: Gate-Charge Characteristics

V G S

( V o

l t s )

0

250

500

750

1000

1250

1500

0 5 10 15 20 25 30VDS (Volts)

Figure 8: Capacitance Characteristics

C a p a c

i t a n c e

( p

F ) C iss

Coss FET+SCHOTTKY

0

10

20

30

40

50

0.001 0.01 0.1 1 10 100 1000Pulse Width (s)

Figure 10: Single Pulse Power Rating Junct ion-to- Ambien t (No te E)

P o w e r

( W )

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance

Z J A

N o r m a l

i z e d

T r a n s i e n

t

T h e r m a l

R e s

i s t a n c e

C rss

0.1

1.0

10.0

100.0

0.1 1 10 100VDS (Volts)

I D ( A m p s )

Figure 9: Maximum Forw ard Biased SafeOperating Area (Note E)

100 s

10ms

1ms

0.1s

1s

10s

DC

RDS(ON)limited

TJ(Max) =150CT A=25C

VDS =15VID=11A

Single Pulse

D=T on /TTJ,PK =T A+P DM.ZJA .R JAR JA=40C/W

TonT

P D

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

TJ(Max) =150CT A=25C

10 s

Alpha & Omega Semi conductor, L td . www.aosmd.com