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SymbolVDSVGS

IDM

TJ , T STG

Symbol Typ Max31 4059 75

R JL 16 24Maximum Junction-to-Lead C Steady-State C/W

Thermal CharacteristicsParameter UnitsMaximum Junction-to-Ambient A t 10s R JA

C/WC/W

Absolute Maximum Ratings T A=25C unless otherwise noted

V

V20

Pulsed Drain Current B

Power Dissipation

T A=25C

Gate-Source Voltage

Drain-Source Voltage

Maximum Junction-to-Ambient A Steady-State

11

9.3

50

Continuous DrainCurrent A

Maximum UnitsParameter

T A=25C

T A=70C

30

W

Junction and Storage Temperature Range

A

P D

C

3

2.1

-55 to 150

T A=70C

ID

AO4422

N-Channel Enhancement Mode Field Effect Transistor

Jan 2003

Features

VDS (V) = 30VID = 11ARDS(ON) < 15m (VGS = 10V)RDS(ON) < 24m (VGS = 4.5V)

General Description

The AO4422 uses advanced trench technology toprovide excellent R DS(ON) and low gate charge. Thisdevice is suitable for use as a load switch or in PWMapplications. The source leads are separated to allowa Kelvin connection to the source, which may beused to bypass the source inductance.

SOIC-8

G

S

S

S

D

D

D

D

G

D

S

Alpha & Omega Semiconductor, Ltd.

8/10/2019 AO4422

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AO4422

Symbol Min Typ Max Units

BVDSS 30 V1

TJ=55C 5IGSS 100 nAVGS(th) 1 1.8 3 VID(ON) 40 A

12.6 15TJ=125C 16.8 21

19.6 24 m

gFS 25 SVSD 0.75 1 V

IS 4.3 A

C iss 1040 pFCoss 180 pFC rss 110 pFRg 0.7

Qg(10V) 19.8 nCQg(4.5V) 9.8 nCQgs 2.5 nCQgd 3.5 nCtD(on) 4.5 nstr 3.9 nstD(off) 17.4 nstf 3.2 nstrr 17.5 nsQ rr 7.6 nC

Body Diode Reverse Recovery TimeBody Diode Reverse Recovery Charge IF=11A, dI/dt=100A/ s

Drain-Source Breakdown Voltage

On state drain current

ID=250 A, V GS =0V

VGS =4.5V, V DS =5VVGS =10V, I D=11A

Reverse Transfer Capacitance

IF=11A, dI/dt=100A/ s

Electrical Characteristics (T J =25C unless otherwise noted)

STATIC PARAMETERSParameter Conditions

IDSS A

Gate Threshold Voltage V DS =VGS ID=250 A

VDS =24V, V GS =0V

VDS =0V, V GS = 20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

RDS(ON) Static Drain-Source On-Resistance

Forward TransconductanceDiode Forward Voltage

m

VGS =4.5V, I D=10A

IS=1A,V GS =0VVDS =5V, I D=11A

Total Gate ChargeGate Source Charge

Gate resistance V GS =0V, V DS =0V, f=1MHz

Turn-On Rise TimeTurn-Off DelayTime

VGS =10V, V DS =15V, R L=1.35 ,RGEN =3

Turn-Off Fall Time

Maximum Body-Diode Continuous Current

Input CapacitanceOutput Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

VGS =10V, V DS =15V, I D=11A

Total Gate Charge

Gate Drain Charge

VGS =0V, V DS =15V, f=1MHz

SWITCHING PARAMETERS

A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value

in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOAcurve provides a single pulse rating.

Alpha & Omega Semiconductor, Ltd.

8/10/2019 AO4422

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AO4422

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

5

10

15

20

25

30

0 1 2 3 4 5

VDS (Volts)Fig 1: On-Region Characteristics

I D ( A )

VGS =3V

3.5V

4V

4.5V

10V

0

4

8

12

16

20

1.5 2 2.5 3 3.5 4

VGS (Volts)Figure 2: Transfer Characteristics

I D ( A )

10

12

14

16

18

20

22

24

0 5 10 15 20

ID (A)Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

R D S ( O N )

( m )

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

0.0 0.2 0.4 0.6 0.8 1.0

VSD (Volts)Figure 6: Body-Diode Characteristics

I S ( A )

25C

125C

0.8

1

1.2

1.4

1.6

0 25 50 75 100 125 150 175

Temperature (C)Figure 4: On-Resistance vs. Junction

Temperature

N o r m a l

i z e d

O n - R e s

i s t a n c e

VGS =10V

VGS =4.5V

10

20

30

40

50

60

2 4 6 8 10

VGS (Volts)Figure 5: On-Resistance vs. Gate-Source Voltage

R D S ( O N )

( m )

25C

125C

VDS =5V

VGS =4.5V

VGS =10V

ID=10A

25C

125C

ID=10A

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AO4422

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

2

4

6

8

10

0 4 8 12 16 20

Qg (nC)Figure 7: Gate-Charge Characteristics

V G S

( V o

l t s )

0

250

500

750

1000

1250

1500

0 5 10 15 20 25 30

VDS (Volts)Figure 8: Capacitance Characteristics

C a p a c

i t a n c e

( p F

) C iss

0

10

20

30

40

50

0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)

P o w e r

( W )

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance

Z J A

N o r m a l

i z e d

T r a n s i e n

t

T h e r m a l

R e s

i s t a n c e

Coss

C rss

0.1

1.0

10.0

100.0

0.1 1 10 100

VDS (Volts)

I D ( A m p s )

Figure 9: Maximum Forward Biased SafeOperating Area (Note E)

100 s

10ms

1ms

0.1s

1s

10s

DC

RDS(ON)limited

TJ(Max) =150CT A=25C

VDS =15VID=11A

Single Pulse

D=T on /TTJ,PK =T A+P DM.Z JA.R JAR JA=40C/W

TonT

P D

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

TJ(Max) =150CT A=25C

10 s

Alpha & Omega Semiconductor, Ltd.