ANODIC BONDING – WAYS OF SURFACE CLEANING
description
Transcript of ANODIC BONDING – WAYS OF SURFACE CLEANING
ANODIC BONDING – WAYS OF SURFACE CLEANING
Investigating different ways to clean the wafer surfaces for the anodic bonding process:
1. Piranha bath ( H2SO4 + H2O2)2. Oxygen plasma 3. Piranha bath + Oxygen plasma4. CMP + RCA5. RCA (NH4OH HF HCl)
Pyrex #
Silicon #
525 µm
380 µm
350°C 1h
Ibonding
1000 V
10 minGently cooling
10% Ibonding
216/01/2012
ANODIC BONDING – WAYS OF SURFACE CLEANING
Cleaning only with Piaranha
350°C 1h
20 mA
1000 V
10 minGently cooling
1.27 mA
316/01/2012
ANODIC BONDING – WAYS OF SURFACE CLEANING
Cleaning only with Oxygen plasma
350°C 1h
3.8 mA
1000 V
40 minGently cooling
0.38 mA
416/01/2012
ANODIC BONDING – WAYS OF SURFACE CLEANING
Cleaning with Oxygen plasma + Piranha
350°C 1h
10 mA
1000 V
10 minGently cooling
0.93 mA
516/01/2012
ANODIC BONDING – WAYS OF SURFACE CLEANING
Pyrex #
Silicon # 33297Cleaning with CMP + RCA
1000 V350°CMax 8.5 mA 0.85 mA in 15 min
616/01/2012
ANODIC BONDING – WAYS OF SURFACE CLEANING
Pyrex #
Silicon # 22095Cleaning with RCA
350°C 1.45 h
14 mA
1000 V
12 minGently cooling
0.89 mA
716/01/2012
ANODIC BONDING – Direct bonding
Pyrex #
Silicon # 3644 Cleaning with Piranha
Wafer for LHCb
1000 V350°CMax 6.2 mA 0.7 mA in 15 min