Annual Meeting WP2- Sensors Heinz Pernegger / CERN 20 November 2013.
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Transcript of Annual Meeting WP2- Sensors Heinz Pernegger / CERN 20 November 2013.
Annual Meeting WP2- Sensors
Heinz Pernegger / CERN20 November 2013
TALENT Midterm Review 19.11.2013 2
Sensors
• Brief update to sensor related work currently in progress by TALENT fellows– Planar Sensors– 3D sensors– CVD diamonds– CMOS sensors
TALENT Midterm Review 19.11.2013 3
Planar Sensors / CiS
• Arno• Developed and processed multi-chip
sensors in view of Phase 2 upgrade• Next steps -> flip chip with FEI4 to do
sensor functional tests• Move to 6 inch processing
TALENT Midterm Review 19.11.2013 4
CiS planar sensor layouts
Different sensor designs for present and future of ATLAS
Comparison between different sensor sizes
CiS - 4“ imminent production
• Testing of LDI (Laser Direct Imaging, maskless) for implant and oxide layers
• 1 batch (9 wafers <100>) with no changes to layout• 1 batch (5 wafers <100>, 4 wafers <111>) with partial
minimisation of implant and oxide layers
Slide5
[µm]
CiS FE-I4 SC with bias grid variants
Slide6
Bias Grid/Dot Variations
• Var. 1: bias dots unchanged, grid per column
• Var. 2: bias dots unchanged, grid at pixel center
• Var. 3: bias dots and grid at pixel center
CiS - FE-I4 SC variations overview
Slide7
Additional testing of variations of• Bias dot implant diameter• Pixel implant width
• Pixel size 250 x 25 µm2
• Only half of the pixels are read out• 2 different bias grid layouts
TALENT Midterm Review 19.11.2013 8
3D detectors
• Sonia & Laura• Focus on characterization of recently
produced sensors by CNM, FBK and Sintef• Main focus of sensor measurements is IV
behavior and breakdown voltage of devices– Time-stability of current measurements– Correlation guard ring current vs active area
current– Shift of breakdown voltage vs different
conditions
TALENT Midterm Review 19.11.2013 9
3D – Oslo/Sintef
Voltage (V)
Curr
ent (
-A)
• Measurements by Laura
• Study IV characteristics after different sensor treatments
Curr
ent (
-A)
Voltage (V)
How they should look
C16_CMS_1_81After Baking
TALENT Midterm Review 19.11.2013 10
3D – Cern/CNM/IFAE
• Measurements by Sonia• Correlate IV measured on guard ring to full active area• Monitor IV behavior all through the assembly process
of modules
TALENT Midterm Review 19.11.2013 11
3D continued
• Use UBM processed sensors to contact all pixels on probe station• Determine V_bd after UBM and dicing on full active area and
compare to guard ring current measured on wafer level• Preliminarily found that guard ring only is not ideal as QA
measurement for full sensor• Triggered re-measurements of sensors in IBL SC module
production
Viacheslav Filimonov (ESR2, WP2) TALENT Midterm Review 19.11.2013
Test system/Bonn• By Slava• Setting up a four pixel chip read-out system
– ATLAS FE-I4 chips– Based on the newly developed system
• Characterization of the system performance– Lab– Test beam measurements
7
Four chip read-out– Introduced in 2012– New adapter board: burn-in card– Support of up to four FE-I4 chips (four single- or two double chip modules)
TALENT Midterm Review 19.11.2013 13
CVD - Diamond Beam Monitor
• Matevz• Most focus went to construction, module
measurement and integration of DBM telescopes
William Trischuk: Diamond Beam Monitor 14
DBM module construction• From TALENT side a collaboration by Bonn, IZM, CERN• Found larger area of disconnected bumps – resolved by second
reflow in different equipment• Tested module function with Sr90 source before and after
integration to telescopesMDBM31 (TDBM05)
MDBM03 (TDBM01)
Hit
map
on
mod
ules
dur
ing
DBM
QA
Hit
map
on
tele
scop
es(d
iffer
ent m
odul
es)
TALENT Midterm Review 19.11.2013 15
Diamond - application
• CERN/CIVIDEC• Use diamonds as beam monitors in accelerator
instrumentation and neutron detector• Study signal response of scCVDpre/post irradiation to
understand charge trapping mechanisms– Use TCT and TSC setups– Over very large temperature range (2K to RT)
• Develop FPGA-based signal processing for scCVD as beam monitors using the knowledge from measurements above
• Test beam monitor with converter foil as neutron detector at different energies.
N -> a Conversion/CIVIDEC
Goal: Reject the gamma-background via real-time pulse shape analysis.
Non-rectangular = gammas
n
Li converter foil
a
g
Diamond detector
Rectangular = alphas
n from reactor Pulse shapes
Background rejection/CIVIDEC
Alpha particle = rectangular shape Photon = non-rectangular
TALENT Midterm Review 19.11.2013 18
Depleted CMOS sensors
• Create depleted volume under n-well -> this serves as volume for particle detection
• Electronics is include in sensor pixel -> “Smart Pixel” allows first processing of information on sensor
• Depleted Monolythic Active Pixel Sensor (DMPAS)
• Potential as “Sensor”• CMOS -> large volume at lower price + larger wafers• higher operational voltage and/or higher resistivity processes allow charged particle detection by depletion: Depleted CMOS sensors
•A number of potential advantages:
Sub-pixel structure -> Better spatial resolutionAnalog amplifier + descriminator on sensor -> digital readout with possibility to combined cells to pixel or strips
TALENT Midterm Review 19.11.2013 19
AMS 180nm HVCMOS-FEI4
uses AMS 180 nm HV process (p-bulk) ... 60-100 V deep n-well to put pMOS and nMOS (in extra p-well) some CMOS circuitry possible (ampl. + discr.) need / profit from FEI4 and followers ~10-20 µm depletion depth 1-2 ke signal various pixel sizes (~20x20 – 50x125 µm2) several prototypes also strip like geometries possible replaces „sensor“ (amplified signal)
in hybrid pixel bump bonding or glue bonding
indications of radiation hardness to ~ 1016 neq / cm2
I. Peric et al.
• Measurements by Simon & Antonello
Signal formation
20
HV2FEI4-V2w/ radhard design features
Sr-90, 1400 e-
Fe-55, 1660 e-
I. Peric et al.
• Hybrid detector = CMOS sensor glued to ROC
• Carried out pre (right) and post (left) irradiation measurements
• Signal seen after 1016n/cm2
• In the future need to understand the details of charge collection, field and charge trapping
• Study different processes and foundries with “common cell layout”• High voltage processes• High resistivity processes
• ESR 6 join the work on depleted CMOS sensors
HVCMOS after irradiation
21
HV2FEI4 glue bonded to FEI4and irradiated to 1 x 1015 neq/cm2
still working
DESY testbeam
preliminary irradiation tests: using reactor neutrons 1x1015 and 1x1016 neq/cm2
also to protons and X-ray (862 Mrad !)
very preliminary results after
1 x 1016 neq/cm2
- @RT after ~30 days / annealing- source scan with ~25 V bias- still alive, noise occ ~10-10
TALENT Midterm Review 19.11.2013 22
Outlook
• Sensor work wide spread between TALENT members• Many TALENT fellow from different WP contribute to
sensor RD with many different and interesting measurements!
• RD on different technologies looks well balanced across– Planar– 3D– Diamonds– CMOS
• Looking forward to your ideas & comments!
Thank you for your attention