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December 8 2015

1

Annual Meeting

Navitas SemiconductorAllGanTM Power ICs

Power Systems Go “GaN Fast”

January 17-19, 2017

Fastest, most efficient

GaN Power FETs

Creating the World’s First AllGaN™ Power ICs

2

First & FastestIntegrated GaN Gate

Driver

World’s FirstAllGaN™ Power IC

Up to 40MHz switching, 4x higher density & 20% lower system cost

GaN Power IC: Hi-Speed FET, Drivers & More• Proprietary AllGaN™ technology• Monolithic integration of GaN FET, GaN Driver, GaN Logic• 650 V eMode• 20x lower drive loss than silicon (<35 mW at 1 MHz)• Driver impedance matched to power device• Very fast (prop delay and turn-on/off of 10-20 ns)• Zero inductance turn-off loop• High dV/dt immunity (200 V/ns) with control• Digital input• Complete layout flexibility

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QFN 5x6mm

D. Kinzer, S. Oliver “Monolithic HV GaN Power ICs” in IEEE PELS Power Electronics Magazine, vol. 3, no. 3, pp. 14-21, September 2016

Speed & Integration à Eliminate Turn-off Losses

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Load Current (A)

External drivers–Significant turn-off losses–Just 1-2 nH of gate loop

inductance can cause voltage spikes that create unintended turn-on of the GaN FET

–Adding a gate resistor reduces spikes but slows down the circuit creating additional losses

Integrated GaN drivers (iDrive™)

–Eliminate the problem–Negligible turn-off losses

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0 1 2 3 4 5 6 7 8 9 10

Externaldriver,noRg

Externaldriver+1Ω

Externaldriver+2Ω

Externaldriver+4Ω

Integrateddriver,noRg

Turn

-off

Loss

(μJ)

GaN Power IC – Fast & Efficient

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• 500 V Switching• No overshoot / spike • No oscillations• ‘S-curve’ transitions• Zero Loss Turn-on• Zero Loss Turn-off• Sync Rectification• High frequency • Small, low cost

magnetics

ZVS soft switching

200ns/div

VGS of Low Side FET

VDS of Low Side FET1 MHz ZVS

Zero Loss Turn-off

High Side Sync Rect

Low Side Sync Rect

Fast Chargers ... going “GaN Fast”3x Fast Charging with 50% Energy Savings

6

Existing Si-based 15W

100 kHzUp to 6.5 W/in3

88%

Smartphones & Tablets

Fast-charging Drones

AR / VR & Wearables

AllGaN™ 201625W

300-500 kHz11 W/in3

>92%

2x Faster Charging

>1 MHz17.5 W/in3

>95%

AllGaN™ 201725W

3x Faster Charging

2016: Navitas; 2017: Xiucheng Huang, "High Frequency GaN Characterization and Design Considerations," Ph.D Dissertation, Dept. Electr. Eng., Virginia Tech., Blacksburg, VA, USA, 2016.

25W 5W

45W Active Clamp Flyback

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• 94.5% efficient at 220V – 94.2% at 120VAC, 93.1% at 90VAC

• 23.7 W/in3 density (uncased)• 15.7mm profile

15.7mm

For further details of ACF, please see APEC 2017 technical paper “Active Clamp Flyback Using GaN Power IC for Power Adapter Applications”, Xue, Zhang

Frequency Drives Size: Transformer (65 W)

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Frequency(kHz)

Vol(mm3)

100 200 300 1000

RM10

~ EQ25

RM7

ER23

12,000

6,000

4,000

2,000

Chrome book

Innergie

FINsix

CPES

8,000

10,000

AC-RF: Efficient Wireless Power

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AC

6.78 MHz Output

EMI

47-63 HzAC

Input

70%

75%

80%

85%

90%

95%

10 20 30 40 50 60

EFFI

CIE

NC

Y

OUTPUT POWER [W]

110VAC-Coil

Constant output currentvs. load reactance

650V Navitas eMode GaN at 27MHz & 40MHz

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Class Phi-2 DC/AC converter:

Technology V Pack(mm)

FSW(MHz)

Eff.(%)

Power(W)

RF Si (ARF521) 500 M17422x22 27.12 91% 150

eMode GaN 650 QFN5x6

27.12 96% 150

40.00 93% 115

• 50% less loss than RF Si• 16x smaller package• Air-core inductors• Minimal FET loss• Negligible gate drive loss

20ns/div, 150V/div

27.12MHz, φ2 Inverter, VDS of GaN

A Hi-Speed Disruption in Power...

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Pow

er D

ensi

ty (W

/in3 )

40% efficiency

1975 1985 2015 20250.1

1

10

100

2x Energy Savings

3x Lower $/W

2x Energy Savings

3x Lower $/W

Linear Regulators Switching

RegulatorsLF Switching

RegulatorsHF Switching

Regulators

80% efficiency

90% efficiency

95-99% efficiency