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and Metal Gate Applications - NCCAVS Usergroups · Hour 1.52 A165 Hour 2.53 A165 Hour 3.54 A165...
Transcript of and Metal Gate Applications - NCCAVS Usergroups · Hour 1.52 A165 Hour 2.53 A165 Hour 3.54 A165...
3M Electronics & Energy Business Group
1 17 March 2014 . All Rights Reserved. © 3M
3MTM TrizactTM Pad Conditioners for FEOL Tungsten Plug
and Metal Gate Applications
March 19, 2014
J. Zabasajja, V. Laraia, M. Fritz, J. Sokol and Junqing Xie 3M Electronics Markets Material Division, St. Paul, MN 55144, USA,
3M Electronics & Energy Business Group
2 17 March 2014 . All Rights Reserved. © 3M
W plug process with TrizactTM B5-M990-5S2
― 30 hour marathon ( TOX dummy wafers and W monitor wafers measured every hour),
• Consumable set B (ex-situ conditioning) :
– Slurry B/Pad B with
3M Trizact B5-M990-5S2 disk (commercial)
Sintered abrasive A165 disk ( POR)
W metal gate process with TrizactTM B6-M990-5S2
― 20 hour marathon ( TEOS and W monitor wafers measured every hour)
• Consumable set B ( ex-situ conditioning):
– Slurry B/Pad B with
3M Trizact B6-M990-5S2 ( experimental)
Sintered abrasive A165 disk ( POR)
3M™ Trizact™ Pad Conditioner Marathon Testing
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Conditioner Description
• B5-M990-5S2 (MC3113)
Nominal Primary Tip height 160µm
~5% Primary tips
Complex Multi-faceted structure
Aspect ratio: sharp
Commercial Experimental
• B6-M990-5S2 (MC3112)
Nominal Primary Tip height 160µm
~5% Primary tips
Complex Multi-faceted structure
Aspect ratio: sharper
3M Electronics & Energy Business Group
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TrizactTM B5-M990-5S2 and B6-M990-5S2 PWR and SF BenchTop Data
PWR, SF: Trizact B6 > Trizact B5 .
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B5-M990 B6-M990 MC3112
Sa
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PW
R (
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ur)
DIW Pad Cut Test, Benchtop Pad, 6lbs DF, Benchtop Tool
PWR(µm/h)
Sa (µm)
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Polish Head and Platen Settings
Platen Speed 73 rpm
Head Speed 67 rpm
High wafer df RR=3.8, Z1=3.3, Z2=1.6,
Z3=1.4, Z4=1.3, Z5=1.3 psi
Slurry Flow Rate 300 mL/min
Head Sweep Sinusoidal sweep, 10 zones
Zones 7.00 to 8.02 inches
Slurry W slurry B
Pad Pad B
Polish Head Contour
Dummy Wafers Thermal Oxide
Rate Monitor W wafer
Tool Conditions (Bulk W Test) (P1 and P2) – 300 mm AMAT Reflexion™
Conditioner Settings
Head Speed 81 rpm
Sweep Linear sweep, 19 sweeps/min
Zones 2.5" (a) to 12.75" (b)
Conditioning Time 60 secs (100% ex-situ)
Cond downforce 9 lbs
Break-in Cond downforce 9 lbs for 30 mins (in DIW, ex-situ)
Note (a) may require adjustment to avoid
collision with polish head
Note (b) disk must not travel beyond 12.75"
All consumables and parameters including the downforce on the wafer ( 1.3 psi vs
2.5 psi) for this test selected based on customer’s input
3M Electronics & Energy Business Group
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Marathon Test With Slurry B and Pad B TrizactTM B5-M990-5S2 and SA A165
(ex-situ)
W Slurry B and Pad B ( ex-situ conditioning) – Longer life and more stable RR/NU
with Trizact B5 vs SA A165.
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W R
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ate
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Total Number Of Conditioning Hours (hrs)
Extended Run Process Results: W RR and NU, 3M Trizact B5, SA A165, 9 lbs CDF, 1.4 psi Wafer df, W Slurry B, Pad B
Trizact B5 RR SA A165 RR Trizact NU SA A165 NU
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Pad Wear Rate (PWR) and Surface Finish Using Laser
Groove Depth Analysis (LGDA) for TrizactTM B5-M990-5S2,
and SA A165 with Pad B and Slurry B at 30 hrs
Pad wear rate was at least 3 to 4 times higher with SA A165 vs Trizact B5. Surface
finish was the same.
New VP3500 Pad
A165 at 11hours
B5 at 30 hours
PWR (µm/hr) 36.5 12
Sa (µm) 18.3 16.3 16.6
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Pad Wear Rate and Surface Finish for Trizact B5-M990-5S2, SA A165, Pad B, Slurry B Using LGDA ex-situ
PWR (µm/hr)
Sa (µm)
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SEM Images – TrizactTM B5 after Marathon Test ( Ex-situ Conditioning)
CVD Coating is intact after 30 hours of ex-situ conditioning ( 100%) with Trizact B5
SE imaging BSE imaging
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Pad Asperity Distribution Analysis ( A165, TrizactTM B5 –M990-5S2) ,
Pad B, Slurry B, Ex-situ at 30 hours
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Surface Height (um)
A165 and B5 Exsitu
Trizact B5 A165
Pad Abruptness, lambda
A165 2.5 ± 0.3
B5 4.2 ± 0.6
Pad abruptness, lambda is higher and asperity truncation is smaller with pad associated with Trizact B5-
M990-5S2 compared to pad conditioned with SA A165 at 30 hours.
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W Metal Gate or Buff ( 20% ex-situ conditioning; 9 lbs df, 1.4 psi wafer df)
― Slurry B/Pad B/ Trizact B6-M990-5S2
― Benchmark: A165 conditioning disk (POR)
― Performance Target: Stable TEOS RR ( 250 A/min)
― Consumable Life Target: Conditioner: 20 hours; 7000 wafers ( Current baseline
(~3 hours; 1000 wafers)
Trizact™ Pad Conditioner: Tungsten Gate CMP Process Development
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W CMP Gate Buff Process With TrizactTM B6 and SA A165 With Slurry B and
Pad B
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OS
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TEOS Removal Rate vs Conditioning Time Trizact B6 vs SA A165
Pad B, Slurry B, 9lbs DF, 20% exsitu conditioning
B6 RR
A165 RR
B6 WIWNU
A165 NU
Trizact B6 rate remained stable throughout the test close to the target rate of 250 A/min. The
rate drops off with A165 primarily due to pad balding.
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W Metal Gate - TEOS Removal Rate Profiles – Pad B, Slurry B,
Similar TEOS RR profiles between Trizact B6 and SA A165 (POR)
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Wafer Location
TEOS Wafer Profiles for A165 with Pad B and Slurry B, 9bs DF, 20% exsitu Conditioning, 1.4 psi,
3 mm EE A165 Hour 0.51
A165 Hour 1.52
A165 Hour 2.53
A165 Hour 3.54
A165 Hour 5.55
A165 Hour 7.56
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Wafer Location
TEOS Wafer Profiles, 3M Trizact B6 Pad B, Slurry B, 9lbs DF, 1.4 psi, 20% exsitu
conditioning
Hour 0.54
Hour 1.58
Hour 2.63
Hour 3.68
Hour 4.74
Hour 5.82
Hour 7.93
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OS
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Conditioning Time (hours)
TEOS Removal Rate vs Conditioning Time 3M Trizact B6
Pad B, Slurry B, 9lbs DF, 1.4 psi, 20% exsitu conditioning
Removal Rate Non-Uniformity
EOL Marathon Test With W Metal Gate Process With TrizactTM B6-M990-5S2
Disk, Pad B and Slurry B – Oxide RR and NU
Stable Oxide RR and NU with Trizact B6 disk at target rate = 250 A/min
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EOL Marathon: Metal Gate Process With TrizactTM B6-M990-5S2 Disk
Pad B, Slurry B- W RR and NU
Stable W RR and NU with Trizact B6 disk at target rate ~ 600 A/min
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Hours of Conditioning ( hrs)
Tungsten Removal Rate, Non-Uniformity vs Conditioning Time 3M Trizact B6
Pad B, Slurry B, 9lbs DF, 1.3 psi, 20% exsitu conditioning
Removal Rate
Non-Uniformity
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SEM Image of TrizactTM B6-M990-5S2 after EOL Marathon Test
SE imaging BSE imaging
CVD coating showing minimal wear after 20 hours of ex-situ conditioning with
Trizact B6-M990-5S2
3M Electronics & Energy Business Group
16 17 March 2014 . All Rights Reserved. © 3M
The utility of 3MTM Trizact Pad Conditioners for W plug and metal gate
processes is demonstrated.
A 3MTM TrizactTM Pad Conditioner reduced the pad wear rate by a
factor of 3 or more, compared to a traditional SA conditioner, while
maintaining the same W rates and non-uniformities for a W plug
process with ex-situ conditioning. A corresponding improvement in pad
life is expected.
For W metal gate process, the more aggressive TrizactTM B6 Pad
Conditioner was needed to polish and maintain stable TEOS rate.
A TrizactTM B6 Pad Conditioner was used for about 18 hours in a W
metal gate process, maintaining the same TEOS and W removal rates
under typical POR conditions. This is expected to lead to a dramatic
increase, > 3X, in the number of wafers processed per pad , compared
to a conventional SA conditioner.
SUMMARY