An 81Gb/s, 1.2V TIALAAn 81Gb/s, 1.2V TIALA--Retimer in ...

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An 81Gb/s, 1.2V TIALA An 81Gb/s, 1.2V TIALA-Retimer in Retimer in St d d 65 CMOS T h l St d d 65 CMOS T h l Standard 65nm CMOS Technology Standard 65nm CMOS Technology Shahriar Shahramian 1 Anthony Chan Carusone 1 Peter Schvan 2 Peter Schvan Sorin P. Voinigescu 1 1 University of Toronto, 2 Nortel Networks University of Toronto 1

Transcript of An 81Gb/s, 1.2V TIALAAn 81Gb/s, 1.2V TIALA--Retimer in ...

Page 1: An 81Gb/s, 1.2V TIALAAn 81Gb/s, 1.2V TIALA--Retimer in ...

An 81Gb/s, 1.2V TIALAAn 81Gb/s, 1.2V TIALA--Retimer in Retimer in St d d 65 CMOS T h lSt d d 65 CMOS T h lStandard 65nm CMOS TechnologyStandard 65nm CMOS Technology

Shahriar Shahramian1

Anthony Chan Carusone1

Peter Schvan2Peter SchvanSorin P. Voinigescu1

1 University of Toronto, 2 Nortel Networksy ,

University of Toronto 1

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MotivationMotivation

Emerging nanoscale CMOS with fT and fMAX beyond 200GHz

Low voltage operation and high levels of integrationLow voltage operation and high levels of integration

Wireline, serial 110Gb/s applications in a single chip solution

High speed retimersg p

Wireline transceivers, equalizers, ADCs and CML memory

Static frequency dividers up to 100GHz in 65nm SOI CMOS

Retimer speeds lag behind SiGe and InP technologies

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Goal and Design MethodologyGoal and Design Methodology

Demonstrate a record speed TIALA-retimer in a standard 65nm GPLP process

Low-voltage nanoscale CMOS topologies

Optimally sizing and biasing devicesy g g

Optimized circuit cell layout

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TIALATIALA--Retimer Block DiagramRetimer Block Diagram

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TIALA FrontTIALA Front--endend

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TIALA SchematicsTIALA Schematics

CMOS TIA 4‐stage pseudo differential LA

Low-noise, broadband front-end

C bi ti f SVT & HVT d i

g p

Combination of SVT & HVT devices

TIA: 7dB gain and 3dB BW of 80GHz

TIALA: > 20dB of gain and 45GHz BW

Overcome latch metastability

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Overcome latch metastability

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SingleSingle--ended to Differential Conversion ended to Differential Conversion

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Differential Buffers SchematicsDifferential Buffers Schematics

Single-ended to differential conversion

O t i f ll it hi dOperates in full switching mode

Series-shunt peaking between stages

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Clock DistributionClock Distribution

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Clock Distribution SchematicsClock Distribution Schematics1.2V 1.2V

150pH

1.2V

55pH 55pH 85pHOutA

25pH

0.8V2kΩ26x1.6µm

SVT150fF

26x0.8µmHVT

26x0.8µmHVTIB

OutB

Clkin 55fF

125pH

150Ω 450pH 450pH 150Ω

26x0.8µmSVT

4mA

IT = 8mA IT = 8mA

125pH

XFMR Input Tuned amplifier chain

Transformer for differential conversion

CMOS TIA

Transformer for differential conversion

CMOS TIA used in the 81GHz clock path

Tuned differential amplifier chain

> 6dB differential gain from 50G-85GHz

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FlipFlip--Flop (Retiming Block)Flop (Retiming Block)

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FlipFlip--Flop SchematicsFlop Schematics

Combination of HVT & LVT devicesCombination of HVT & LVT devices

No current sources are used

Operation from a 1.2V supply

Layout is critical for 81Gb/s operation

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TIALATIALA--Retimer Signal FlowRetimer Signal Flow

V400m

V

n 50

Ω

400m

V I n

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Layout ConsiderationsLayout Considerations

Layout optimized by interdigitating and merging transistors with common sources or drains in a single wellcommon sources or drains in a single well

Latch example:

OutA OutB

InA

1.6µ

B µ ClkA

InB

0.8µ

ClkB

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Chip MicrographChip MicrographDC and Biasing

Output DriverFlip‐flop

DC and Biasing

iff i l i ionInpu

t Outpu

TIALA Differential pairs

Clock

distribu

t i

ut

ClockStandard 65nm GPLP CMOS process

Measure fT and fMAX of an 80x1um x 60nm n-MOSFET is 170GHz and 250GHz respectively measured at VDS = 0.6V

Chip area is 0.56mm x 1.2mm including pads

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p g p

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SS--Parameter Measurement ResultsParameter Measurement Results

10

‐5

‐15

‐10

B)

‐20

15

meters (dB

‐25S‐Param

‐30

TIA Measured SP Return LossTIA Simulated SP Return LossDRV Measured SP Return LossDRV Simulated SP Return Loss

‐35

0 20 40 60 80 100Frequency (GHz)

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Frequency (GHz)

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SS--Parameter Measurement ResultsParameter Measurement Results

‐5

0

‐10

5

B)

‐15

meters (dB

‐25

‐20

S‐Param

‐30CLK Measured SP Return LossCLK Simulated SP Return Loss

‐35

0 20 40 60 80 100Frequency (GHz)

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Frequency (GHz)

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Transient Test Setup Block DiagramTransient Test Setup Block Diagram

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Transient Test Setup PhotographTransient Test Setup Photograph

Channel(24 i h 50G C bl )

81Gb/s TIALA‐Retimer

(24‐inch 50G Cable)

81Gb/s (27 1) PRBS81Gb/s (27 – 1) PRBS Transmitter

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Measurement Results: 75Gb/sMeasurement Results: 75Gb/s

τJRMS ≈ 2.5ps≈5mV

Inpu

t τJRMS 2.5ps

≈315mVput τJRMS ≈ 380fs

≈315mV

Outp

Input eye amplitude is 40mVpp single-ended

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Input eye amplitude is 40mVpp, single ended

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Pattern Verification: 75Gb/sPattern Verification: 75Gb/s

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Measurement Results: 78Gb/sMeasurement Results: 78Gb/s

τJRMS ≈ 1.0ps

Inpu

t JRMS p≈12mV

put τJRMS ≈ 370fs

Outp

Input eye amplitude is 60mVpp single-ended

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Input eye amplitude is 60mVpp, single ended

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Measurement Results: 81Gb/sMeasurement Results: 81Gb/s

τJRMS ≈ 1.1ps

Inpu

t

≈15mVτJRMS 1.1ps

put

≈320mVτJRMS ≈ 380fs

Outp ≈320mV

Input eye amplitude is 80mVpp single-ended

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Input eye amplitude is 80mVpp, single ended

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Pattern Verification: 81Gb/sPattern Verification: 81Gb/s

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Table of ComparisonTable of Comparison

Ref Technology Rate Supply P PRef. Technology Rate (Gb/s)

Supply (V)

PLATCH (mW)

PTotal (mW)

[2] InP HEMT 80 -5.7 N/A 1200[ ]fT = 245GHz

[3] SiGe BiCMOSfT = 150GHz

48 2.5 23 288

[4] 90nm CMOS ProcessfT = 120GHz

40 1.2 10.8 130

This 65nm GPLP CMOS Process 81 1.2 9.6 200Work fT = 170GHz

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ConclusionsConclusionsFastest TIALA-retimer in any technology, operating at 81Gb/s

Latch power consumption is 9 6mWLatch power consumption is 9.6mW

TIA FoM is 118.5µW/Gb/s in differential operation

Combination of LVT, SVT and HVT CMOS from 1.2V supply

Low voltage CMOS nanoscale topologies

Optimized transistor layouts and compact latch layoutOptimized transistor layouts and compact latch layout

Combining low-noise, broadband CMOS TIA and high gain LA

Optimized transistor sizing and biasing

Series-shunt peaking techniques

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p g q

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AcknowledgmentsAcknowledgments

We wish to acknowledge Nortel for funding and chip fabrication

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Backup SlidesBackup Slidesac up S desac up S des

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Simulated Clock Tree (SingleSimulated Clock Tree (Single--ended)ended)

5

10

0

5

(dB)

‐5

d AC Gain

‐15

‐10

Simulated

‐20 XFMR AC Gain Clock Tree AC Gain

‐25

35 45 55 65 75 85 95Frequency (GHz)

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Frequency (GHz)

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Simulated TIALA AC ResponseSimulated TIALA AC Response

20

25

15

20

(dB)

10

d AC Gain

0

5

Simulated

TIA AC Gain

LA1 AC Gain

‐5

LA2 AC Gain

LA3 AC Gain

LA4 AC Gain

‐10

0 20 40 60 80 100Frequency (GHz)

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Frequency (GHz)

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Measurement Results: 81Gb/sMeasurement Results: 81Gb/s

τJRMS ≈ 750fs

Inpu

t τJRMS 750fs

put τJRMS ≈ 350fs

Outp

Input eye amplitude is ~ 300mVpp single-ended

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Input eye amplitude is 300mVpp, single ended