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Ampli ficateur opérationn el

AMPLIFICATEUR OPERATIONNEL

• Ampli ficateur de tension quasi-idéal– Ampli ficateur de différence– Idéali té :

• Re ÆÆ ∞∞, Rs ÆÆ 0, Av ÆÆ ∞∞• Bande passante infinie

– Ampli ficateur utili sable en contre-réaction

• Objet technique– 20 à 50 transistors intégrés– Limitations :

• Idéalité• Saturations• Linéarité / distorsion• Défauts supplémentaires

• Composants à part entière / sous-circuit

Q1 Q2

VCC

Q3

R1

DZ

Q6

-VCCR2

Q10

R4

Q11

C

Q9Q8

Q4 Q5

Q7

Q12

R5

Q13

Q15

R6

R7

Q14

- +


en pratique

Limites du do maine linéaire :

Ex : VCC = 15 V, A = 1.5 106 ÆÆ εεmax = 10 µµV

CARACTERISTIQUES

vs

εε

-VEE

+VCC

+

-

εAvs= vs

εεPent

e A

εεmaxεεmin

VSAT-

VSAT+

−≥+≤

−

+

EESAT

CCSAT

VV

VV

−+= SATSATs VouVv

−≈+≈

−

+

CCSAT

CCSAT

VV

VV

A : 105 à 107

Red : 107 à 1015 ΩΩRS : 10 à 102 ΩΩ≈≈ Passe-bas 1er ordre, fc : 1 à 100 Hz

AV

AV CCSAT

max ≈≈+

ε


UTILISATION EN CONTRE-REACTIONNULLATEUR

• Ex : Contre-réaction tension/parallèleR2

εε-

+

R1

ve vs

+

−=

−⇒

+−=

++

+≈−

222

12

2

21

1

1R

RA

R

Rv

R

vRAv

RRR

RRv

RRR

RRv

sss

sss

e

ee

e

es

εε

ε

ε

=++

≈−⇒

<<>>>>

ε

ε

AvRR

vRvR

RRRR;RR

s

es

s

ee21

21

2

21 ( ) 21

2

1 RRA

ARA

v

vv

e

s

++−==

( ) 22

2

1 RAR

vR

A

vA

A

v eevs

++===ε

0→−iet

0→⇒ ε

Amplificateur « inverseur »

« Masse virtuelle » | général : nullateurHypothèses

1

2

R

RAv −→⇒

1

21

R

RRA

+>>


APPLICATIONS LINEAIRES(Contre-réaction)

• Ampli ficateurs

inverseur

non -inverseur

suiveur

Hypothèse : AOp. quasi-idéaux ÆÆ εε ≈≈ 0

R2

0-

+

R1

ve vs

+

0+-

R2R1

vevs

+

0+-

vevs

+

1

2

R

RAv −=

1

21R

RAv +=

1=vA

• Opérateurs

additionneur

soustracteur

R0

0-

+R1

ve1vs

RN

veN

∑=

−=N

i i

eis R

vRv

10

R2

0R1

ve2vs

R1

ve1

-

+

R2

( )211

2ees vv

R

Rv −=

• Gyrateurs …


• Ordre 2ex: passe-bas

FILTRES ACTIFS

• Fil tres du premier ordre

passe-bas

passe-haut

→→ Passe-bande (large bande)→→ Déphaseur →→ Généralisations des amplificateurs

RCjRRAv ω+

−=1

11

R

0-

+

R1

ve vs

+

C

R2

0-

+

R

ve vs

+

C

RCj

RCj

R

RAv ω

ω+

−=1

2

1

2

Z

ZAv −=

1

21

Z

ZZAv

+= ...

• Opérateurs

intégrateur*

dérivateur**

0-

+

R

ve vs

C ( ) ( )∫−=t

es dttvRC

tv0

1

R

0-

+ve vs

C( ) ( )

dt

tdvRCtv e

s −=

0+

-R

vevs

2C

RC

( )22211

ωω RCRCjAv −+

=


• Distorsion réciproqu e

APPLICATIONS LINEAIRESA CARACTERE NON LINEAIRE (Contre-réaction)

• Rétroaction p ar dipô le non-linéairev

DNL-

+

R

ve vs

+

i

−=

=

vvR

vi

s

e

( )iv Φ=

−=⇒

R

vv e

s Φ

R

DNL-

+ve vs

+

iv ( )iv Φ=

( )

−== −

Rivvi

s

e1Φ

( )es vRv 1−−=⇒ Φ

• ExempleDNL = diode

→→ convertisseurlogarithmique

→→ convertisseurantilogarithmique

→→ multiplieur 2 quadrants …

TUv

SAT eIi ≈ 0>v

−=

SAT

eTs RI

vlnUv

T

e

U

v

SATs eRIv −=


APPLICATIONS NON-LINEAIRES …Réaction →→ ε≠ε≠0 ; vs=±±VSAT

• Comparateur à hystérésis

εε-+

R2R1

vevs

+VCC

-VCC

-VTH

+VTHve

vs

CCTH VRR

RV

21

2

+=

• Multivibrateur astable

+=

1

2212

R

RlnRCT

εε-+

R2R1

Cvs

R

-VCC

t

vsVCC

vC

+VTH

-VTH

• + Multivibrateur mono stable …


DEFAUTS STATIQUES (1)

• Tension d e décalageConstat : vs ≠≠ 0 même si ε = 0

→→ Générateur parasite équivalent dans la maille d’entrée= TENSION de DECALAGE (offset)

•• signe quelconqu e / position qu elconque (sur + ou -)•• constant mais aléatoire (+ dépend de T…) •• en pratique assez faible valeur (µµV →→ mV)

réel

idéal+

-vs

VD

ε

Ex 1 : comparateur

→→ Comparaison / VD(ou VTH+VD)

Solution :Compensation

Ex 2 : intégrateur pur

0-

+

R

ve vs

C

VD

-

+ ( )

−=−

=

−=

dt

dvC

dt

vVdCi

R

Vvi

ssD

De

tRC

Vdtv

RCv D

t

es +−= ∫0

1Terme utileTerme parasite : rampe→ Divergence

→ Saturation


DEFAUTS STATIQUES (2)• Courants de polarisation

Équivalent en courant des décalages en tension→→ Générateur parasite équivalent aux nœuds d’entrée

= COURANT de POLARISATION (bias)•• signe quelconqu e•• en pratique, très souvent équilibré : IP+ = IP-

•• constant mais aléatoire (+ dépend de T…) •• en pratique assez faible valeur (pA →→ nA)

réel

idéal+

-vs

IP-

ε

•Mêmes effets que les décalages en tension (quali tativement)•Souvent « moins grave »

• Solution :Compensation

Équilibrage des impédances

Ex : intégrateur pur

vs

−=

+=

dt

dvCi

IR

vi

s

Pe

tC

Idtv

RCv P

t

es −−= ∫0

1Terme utileTerme parasite : rampe→ Divergence

→ Saturation

IP+

0-

+

R

ve

C

IP-

+


• Exemple : suiveur

SLEW-RATE

• Distorsion en grands s ignaux– Différents de la fréquence de coupu re fc

– Effet non -linéaire (triangu larisation des s ignaux)– Vitesse de variation maximale de Vs(t) (pente max.)

-VCC

t

veVCC

vs

SR

- SR

+ve

vs

( ) ( )tcosVtV ss ω0= ( ) ( )tsinVdt

tdVs

s ωω 0=0sVSR ω>

Dépend : de la fréquencede l’ampli tude

SR : un ité = V sec -1 (V/µµsec)


AUTRES CRITERES

• Alimentations (valeurs, symétriques …)• Consommation / pu issance dispon ible• Bruits propres

– En tension et en courant– Analogu es aux décalages mais aléatoires variables sur une

large bande de fréquence

• Linéarité / distorsion (en zone « linéaire »)• Prix …

Am

plificateu

r op

érationnel

µA741, µA741YGENERAL-PURPOSE OPERATIONAL AMPLIFIERS

SLOS094B ± NOVEMBER 1970 ± REVISED SEPTEMBER 2000

1POST OFFICE BOX 655303 ωDALLAS, TEXAS 75265

Shor t-Circuit Protection

Offset-V oltage Null Capabili ty

Large Common-M ode and DifferentialVoltage Ranges

No Frequency Compensation Required

Low Power Consumption

No Latch-Up

Designed to Be Interchangeable W ithFairchild µA741

descr iption

The µA741 is a general-purpose operationalamplifier featuring of fset-voltage null capabili ty .

The high common-mode input voltage range andthe absence of latch-up make the ampli fier idealfor voltage-follower applications. The device isshort-circuit protected and the internal frequencycompensation ensures stabili ty without externalcomponents. A low value potentiometer may beconnected between the of fset null inputs to nullout the of fset voltage as shown in Figure 2.

The µA741C is characterized for operation from05C to 70 5C. The µA741I is characterized foroperation from ± 405C to 85 5C.The µA741M ischaracterized for operation over the full mil itarytemperature range of ± 555C to 125 5C.

symbol

IN +

IN ±

OUT

+

±

OFFSET N1

OFFSET N2

Copyright Ω 2000, Texas Instruments IncorporatedPRODUCTIONDATAinformation is current as of publication date.Products conform to specif ications per the termsof T exas Instrumentsstandard warr anty. Production processing doesnot necessar ily includetesting of all parameters.

1

2

3

4

5

6

7

14

13

12

11

10

9

8

NCNC

OFFSET N1IN±IN+

VCC

±NC

NCNCNCV

CC +OUT

OFFSET N2NC

µA741M ...J PACKAGE(TOP VIEW)

1

2

3

4

8

7

6

5

OFFSET N1IN±IN+

VCC ±

NCVCC+OUTOFFSET N2

µA741M ...J G PACKAGEµA741C, µA741I . . . D, P, OR PW PACKAGE

(TOP VIEW)

1

2

3

4

5

10

9

8

7

6

NCOFFSET N1

IN±IN+

VCC ±

NCNCV

CC+OUTOFFSET N2

µA741M ...U PACKAGE(TOP VIEW)

3 2 1 20 19

91 0 11 12 13

4

5

6

7

8

18

17

16

15

14

NCV

CC +NCOUTNC

NCIN±NCIN+NC

µA741M . . . FK PACKAGE(TOP VIEW)

NC

OF

FSE

TN

1N

CO

FF

SET

N2

NC

NC

NC

NC

V

NC

CC

±

NC ± No internal connection



SLOS094B ± NOVEMBER 1970 ± REVISED SEPTEMBER 2000

2 POST OFFICE BOX 655303 ω DALLAS, TEXAS 75265

AVAILABLE OPTIONS

PACKAGED DEVICESCHIP

TASMALL

OUTLINE(D)

CHIPCARRIER

(FK)

CERAMICDIP(J)

CERAMICDIP(JG)

PLASTICDIP(P)

TSSOP(PW)

FLATPACK

(U)

CHIPFORM

(Y)

05C to 705C µA741CD µA741CP µA741CPW µA741Y

±4 05C to 855C µA741ID µA741IP

±5 55C to 1255C µA741MFK µA741MJ µA741MJG µA741MU

The D package is available taped and reeled. Add the suf fix R (e.g., µA741CDR).

schematic

IN ±

IN+

VCC+

VCC ±

OUT

OFFSET N1

OFFSET N2

Transistors 22Resistors 11Diode 1Capacitor 1

Component Count


SLOS094B± NOVEMBER 1970 ± REVISED SEPTEMBER 2000

3POST OFFICE BOX 655303 ωDALLAS, TEXAS 75265

µA741Y chip information

This chip, when properly assembled, displays characteristics similar to the µA741C. Thermal compression orultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductiveepoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

CHIP THICKNESS: 15 TYPICAL

BONDING PADS: 4 ψ4 M INIMUM

TJmax = 150 5C.

TOLERANCES ARE +10% .

ALL DIMENSIONS ARE IN M ILS.

+

±OUT

IN+

IN ±

VCC+(7)

(3)

(2)(6)

(4)

VCC ±(5)

(1)

OFFSET N2

OFFSET N1

45

36

(1)

(8)

(7) (6)

(5)

(4)



SLOS094B - NOVEMBER 1970 - REVISED SEPTEMBER 2000

absolute maximum ratings over operating free-air temperature range (unless otherwise noted) #

µA741C µA741I µA741M UNIT

Supply voltage, V CC+ (see Note 1) 18 22 22 V

Supply voltage, V CC- (see Note 1) -18 -2 2 -2 2 V

Differential input voltage, V ID (see Note 2) +15 +30 +30 V

Input voltage, VI any input (see Notes 1 and 3) +15 +15 +15 V

Voltage between offset null (either OFFSET N1 or OFFSET N2) and V CC- +15 +0.5 +0.5 V

Duration of output short circuit (see Note 4) unlimited unlimited unlimited

Continuous total power dissipation See Dissipation Rating T able

Operating free-air temperature range, T A 0 to 70 - 40 to 85 - 55 to 125 5CStorage temperature range - 65 to 150 - 65 to 150 - 65 to 150 5C

Case temperature for 60 seconds FK package 260 5CLead temperature 1,6 mm (1/16 inch) from case for 60 seconds J, JG, or U package 300 5C

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds D, P, or PW package 260 260 5C# Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress rating s only, and

functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditi ons" is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may af fect device reliability.

NOTES: 1. All voltage values, unless otherwise noted, are with respect to the midpoint between V CC+ and VCC - .2. Differential voltages are at IN+ with respect to IN -.3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 V , whichever is less.4. The output may be shorted to ground or either power supply . For the µA741M only, the unlimited duration of the short circuit applies

at (or below) 125 5C case temperature or 75 5C free-air temperature.


electrical characteristics at specified free-air temperature, VCC+ = +15 V , T A = 25 5C (unlessotherwise noted)

PARAMETER TESTCONDITIONSµA741Y

UNITPARAMETER TESTCONDITIONSMIN TYP MAX

UNIT

VIO Input offset voltage VO = 0 1 6 mV

∆VIO(adj) Offset voltage adjust range VO = 0 +15 mV

IIO Input offset current VO = 0 20 200 nA

IIB Input bias current VO = 0 80 500 nA

VICR Common-mode input voltage range +12 +13 V

VOM Maximum peak output voltage swingRL = 10 kΩ +12 +14

VVOM Maximum peak outpu t voltage swingRL = 2 kΩ +10 +13

V

AVD Large-signal differential voltage amplification RL . 2 kΩ 20 200 V/mV

ri Input resistance 0.3 2 MΩro Output resistance VO = 0, See Note 5 75 Ω

Ci Input capacitance 1.4 pF

CMRR Common-mode rejection ratio VIC = VICRmin 70 90 dB

kSVS Supply voltage sensitivity ( ∆VIO/∆VCC) VCC = +9 V to +15 V 30 150 µV/V

IOS Short-circuit output current +25 + 40 mA

ICC Supply current VO = 0, No load 1.7 2.8 mA

PD Total power dissipation VO = 0, No load 50 85 mW# All characteristics are measured under open-loop conditions with zero common-mode voltage unless otherwise specified.NOTE 5: This typical value applies only at frequencies above a few hundred hertz because of the ef fects of drift and thermal fee dback.

operating characteristics, V CC + = +15 V, TA = 25 5C

PARAMETER TESTCONDITIONSµA741Y

UNITPARAMETER TESTCONDITIONSMIN TYP MAX

UNIT

tr Rise time VI = 20 mV, RL= 2 kΩ, 0.3 µs

Overshoot factorI ,

CL = 100 pF,L ,

See Figure 1 5%

SR Slew rate at unity gainVI = 10 V,CL = 100 pF,

RL= 2 kΩ,See Figure 1

0.5 V/µs

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