Aluminum Induced Crystallization using an Electron Beam
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Transcript of Aluminum Induced Crystallization using an Electron Beam
Aluminum Induced Crystallization using an Electron Beam
By: Benjamin NewtonUniversity of Arkansas
Microelectronics and Photonics ProgramGeorge Washington Carver Program
Mentors: Dr. Husam Abu-Safe Dr. Hameed Naseem Dorinne Bower
Outline
• Background information – What is Aluminum Induced Crystallization?
• Mathematical Approximations of Temperature
• Methods and Materials
• Data and Illustrations
• Results
• Acknowledgements
What is AIC?
A process used to create polycrystalline silicon from amorphous silicon. This process consist of depositing a thin film of silicon and aluminum on a substrate and annealing the substrate between 150 to 400 degrees Celsius.
10 nm Al
200 nm Si
Glass substrate
What is Annealing?
• Annealing is a metallurgical heat treatment where in a material is altered, causing changes in the strength, hardness, and electrical properties of the material.
Why is AIC important?
• It is an integral part of the process in the manufacturing of photovoltaic cells and Thin Film Transistors.
Mathematical Approximations of Surface Temperature
E-beam
10 nm Al
200 nm Si
Specific Heat Calculations
Q= QAl + QSi
Q= mAl CAl ΔT + mSiCSiΔTQ= (mAlCAl + mSiCsi)ΔTQ= (ρAlπr^2lAlCAl + ρSiπr^2lSiCSii)ΔT
ρAl = 2700 kg/m^3ρSi = 2336 kg/m^3lAl = 10 nmlSi = 200 nmCAl = 900 J/kg·kCsi = 703 J/kg·kr = to be determined by chart
Spotsize vs Approximate Probe Diameter in Nanometers
Spot Size 30 kv 20kv 10kv 5kv 1kv 500v
1 0.4 0.4 0.4 0.5 0.5 0.6
2 0.6 0.7 0.8 1.2 1.3 1.3
3 1.0 1.3 1.7 2.4 2.5 2.6
4 2.1 2.6 3.4 4.8 5.0 5.2
5 4.1 5.0 6.7 9.5 10.0 10.4
6 8.2 10.0 13.4 19.0 20.0 20.7
7 16.0 19.6 26.3 37.4 39.4 40.9
Results
• We found that there was an affect from the electron beam on the surface of the substrate but that it was undetectable by XRD because of insufficient amount of polycrystalline silicon. After we switched to a substrate of smaller dimensions the change in the morphology of the surface was more defined. This amount was continuously of insufficient amount to be detected by XRD but there was a small amount of crystal growth detected by the TEM.