"AlSiC-Based Hybrid Composite Tool Kit" By Richard W. Adams and Mark A. Occhionero Ceramics Process...
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Transcript of "AlSiC-Based Hybrid Composite Tool Kit" By Richard W. Adams and Mark A. Occhionero Ceramics Process...
"AlSiC-Based Hybrid Composite Tool Kit"
By Richard W. Adams
and Mark A. Occhionero
Ceramics Process Systems
111 South Worcester St
Chartley MA 02712-0338
www.alsic.com
New England IMAPS 31 Annual Symposium
Thursday May 6, 2004
"AlSiC-Based Hybrid Composite Tool Kit"
• Abstract: AlSiC and multi-component structures provide unique
thermal management electronic packaging solutions for
microwave, microelectronics, power electronics, and
optoelectronics that result in improved product reliability. This
paper reviews volume AlSiC manufacturing applications today,
and then describes examples of a wide range of possibilities for
multi-component, multi-functional thermal management
structures.
AlSiC Packaging for Electronics Thermal Management- Basic Parameters
• Controlled Thermal Expansion
– Engineered CTE values - for component and assembly compatibility
= reliability
– Engineered solutions can create typical CTE values 7-12 ppm/°C
• Thermal Dissipation
– High isotropic thermal conductivity, typical = 200 W/mK
• Lightweight
– 3 g/cm3
• Cost Effective Manufacturing Capability - net shape cast
CPS AlSiC Fabrication - Defines Properties and Design
• SiC to Al-metal ratio defines thermal expansion– 1st - SiC preform with controlled and variable volume content– 2nd - Infiltrate with Al-metal to form the AlSiC composite
• Thermal conductivity determined by components– Electronic Grade SiC 230 - 260 W/mK – A356.2 Casting Alloy 160 W/mK– Little influence of ratio of 2 components
• net shape forming – preform is ~ smaller than final part– infiltration tool = final dimensions– eliminates costly machining
SiC preforminjection molded
AlSiC productinfiltration casting
AlSiC - Metal Matrix Composite Material
SiC
SiC particles uniformly distributed in continuous Al-matrix
~63 vol% SiC
~55 vol% SiC
~37 vol% SiC
See www.alsic.com
AlSiC Tools
• Marry Properties to Product Design
• Design Functionality
– Basic AlSiC
• lids
• baseplates
• package system structures
– AlSiC + Concurrent IntegrationTM
• Cooling Tubes - active fluid
• HOPG / Diamond - passive transfer
• Dielectric Ceramic Inserts - Ω isolation
Basic AlSiC Design
• Pick compatible AlSiC CTE
– Seal rings
– Substrates
– Devices
• Design rules for AlSiC casting
– Draft Angles
– Thicknesses
– Radii
– Al-Rich Areas for conventional
machining
See www.alsic.com
Basic AlSiC - lids
• Simple to Complex Geometries•Applications:
•Microprocessor Lids•DSP•Flip Chip Lids•Optical Lids
•Volumes•100 pcs - 40K/week
•Price (Volume/Complexity) • $ 2 - $ 5 in volumes of ~100K/yr
Basic AlSiC - lids
• Complex Geometries•Product is net-shape fabricated - no machining
•multiple pedestals•angled features•radial alignment features•septums and walls•lower cost than machined Aluminum alternative
Basic AlSiC - Baseplates
• Compatible CTE = unlimited
thermal cycling of package
– AlN soldered to AlSiC
• Design
– Dome Shape - Side 1
• Compressing a dome shape
against flat cold plate
maximizes heat transfer
– Flat - Side 2
• Attachment of “flat” substratesflat dielectric substrate surface
convex bow cooler plate surface
Thomas Schuetze, Herman Berg, Oliver Schilling “The new 6.5kV IGBT module: a reliable device for medium voltage applications”, PCIM September 2001
Concurrent IntegrationTM -High Density Interconnect (HDI) for GaAs Microwave Transmit/Receive Packages
First, dense dielectric ceramic ferrules are inserted into the QuickCastTM infiltration tooling along with the SiC preform.
Then, the Al-metal, that infiltrates the SiC preform to form the AlSiC composite, hermetically bonds and fills the ferrules to form coaxial feedthrus. This process is termed Concurrent IntegrationTM.
• Dielectric Feedthrus
Concurrent IntegrationTM - AlSiC LED Submount
• Alloy Metal Inserts•Product Features:
•multiple pedestals•angled features•partially machined to expose Alloy 49 pads for assembly•Alloy 49 bonded direct to Al phase of AlSiC
Alloy 49 pad
Concurrent IntegrationTM - Optoelectronic AlSiC TE Cooler Substrate with HOPG
• High Thermal Conductivity Insert
• Product Features:– Pyrolytic Graphite (PG) compressively
encapsulated within AlSiC
– Thermal conductivity 1300 W/mK
– PG located near heat source/TE cooler position.
• Selective use of costly material
1350 W/mK
Heat source surface
1350 W/mKAlSiC laser diode TEC substrate system showing TEC mount area (top) and the cross section showing the HOPG insert in the AlSiC composite (bottom).
HOPG 1300 W/mK
AlSiC
AlSiC
Concurrent IntegrationTM - Liquid Flow Thru Cooling
• Cooling Tube or Heat Exchanger
Product Features:• Tube intimate within AlSiC casting
– SiC overmolded onto tube
– Direct bond AlSiC to tube
– Maximize heat transfer AlSiC to tube
• Low cost one step assembly• CPS Patented process
Metallurgical Bonding AlSiC to AlSiC
BASE
TOP
Heat sink and housing are joined by Friction Stir Welding.
• Friction Stir Welding •Bonding of Engineered Al-Rich Areas within AlSiC casting
•Al Solder Bonding Processes•Various commercially available•Desired Al Skin Present on AlSiC
QuickCastTM High Pressure Precision Aluminum Casting
• Aluminum-only precision casting
– Tolerances in the +/-0.003” Range
– Low cost tooling
– Rapid product introduction and
moderate production rate
• Option for Concurrent IntegrationTM
– Diamond, PG, etc inserts
High Output LED light housing
• RV, Boats, Theater, Safety Lighting
Summary "AlSiC-Based Hybrid Composite Tool Kit"
• Basic AlSiC Properties coupled with Concurrent IntegrationTM
– AlSiC = Engineered CTE, Thermal Conductivity, Lightweight
– CPS AlSiC =
• Shape Complexity and Tight Tolerance - net shape
• Attractive Value Proposition for many (growing number) of Applications
• Concurrent IntegrationTM Presents Thermal Package Design Options - limited
only to your imagination
– AlN, ZTA, Al2O3, Si3N4 Substrates/Ferrules, etc.
– Stainless steel, alloy 49, Titanium inserts
– Tubes, Heat exchangers, welded pin fin coolers
– High Thermal Conductivity Diamond, PG