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ALM-1522 700 – 1100 MHz Low Noise, High Gain, High Linearity TECHNOLOGIES/ALM... · 2009. 5....
Transcript of ALM-1522 700 – 1100 MHz Low Noise, High Gain, High Linearity TECHNOLOGIES/ALM... · 2009. 5....
ALM-1522700 – 1100 MHz Low Noise, High Gain, High Linearity Balanced Amplifier Module
Data Sheet
Description
Avago Technologies’ ALM-1522 is a low noise, high gain and high linearity balanced amplifier module operating in the 700MHz to 1100MHz frequency range. The exception-al noise and linearity performance are achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process.
The ALM – 1522 is housed in a miniature 5.0 x 6.0 x 1.1 mm3 22-lead multiple-chips-on-board (MCOB) module package. The compact footprint and low profile makes the ALM-1522 an ideal choice for Wireless Infrastructure Basestation Tower-Mounted-Amplifiers (TMA), Radiocard Receivers, Multi-Carrier Driver Amplifiers for GSM, CDMA, W-CDMA, TD-SCDMA base stations operating in the 700MHz to 1100MHz band.
Component Image
Surface Mount MCOB5.0 x 6.0 x 1.1mm3 22-lead
Top VIew
BoTToM VIew
Note: Package marking provides orientation and identification.“1522” = Device Part Number“WWYY” = Work week and year of
manufacture“XXXX” = Assembly lot number
1522WWYYXXXX
Features
• Low noise figure
• High linearity and OP1dB
• 5V supply
• Adjustable current for optimum NF or OIP3
• High gain : 31dB
• Shutdown function
• GaAs E-pHEMT Technology
• Miniature package size : 5.0 x 6.0 x 1.1 mm3
• Tape-And-Reel packaging option available
• MSL-3 and Lead-free
• Meets ESD 100V Machine Model per EIA/JESD22-A115, and 500V Human Body Model per EIA/JESD22-A114
• Can be used in single-ended or balanced configuration
• Unconditionally stable
• Green/RoHS Compliant
Specifications
900 MHz; 5V, Quiescent Idd=240 mA (typ) per channel Vctrl at 2.7V• 31 dB Gain
• 0.6 dB Noise figure
• 27.7 dBm OP1dB
• 43 dBm OIP3
• 45 dB Reverse Isolation
Applications
• TMA & Front End LNA for GSM, CDMA, W-CDMA, TD-SCDMA base stations.
• Driver amplifier for GSM, CDMA, W-CDMA, TD-SCDMA base stations.
2
product Consistency Distribution Charts[4] [5]
TA = 25°C, Vdd = 5V, Vctrl = 2.7V, RF performance at 900 MHz, unless otherwise specified.
Absolute Maximum Rating[1] TA=25°C
Symbol parameter Units Absolute Max.
Vdd Supply voltages, bias supply voltage V 5.5
Vctrl Control Voltage V 5.5
Pin,max CW RF Input Power dBm +20
Pdiss Total Power Dissipation [2] W 5.0
Tj Junction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Thermal resistance
Thermal Resistance [3] (Vdd = 5V, Vctrl1 = Vctrl2 = 2.7V, Idd = 480mA), θjc = 16.5°C/w
Notes:1. Operation of this device in excess of any of
these limits may cause permanent damage.2. Board temperature TB is 25°C. Derate 61mW/°C
for TB>97°C. 3. Thermal resistance measured using Infra-Red
Microscopy Technique.
Figure 1. Gain (dB) Distribution Figure 2. NF (dB) Distribution
Figure 3. oIp3 (dBm) Distribution Figure 4. op1dB (dBm) Distribution
LSL USL
29.5 30 30.5 31 31.5 32 32.5
LSL
27 28 29
Mean = 31 dBCPK = 2.0
Mean = 27.7 dBCPK = 3.8
USL
.4 .5 .6 .7 .8 .9 10.4 0.5 0.6 0.7 0.8 0.9 1.0
USL
.4 .5 .6 .7 .8 .9 10.4 0.5 0.6 0.7 0.8 0.9 1.0
Mean = 0.6 dBCPK = 2.4
LSL
39 40 41 42 43 44
Mean = 43 dBCPK = 3.3
Note:4. Distribution data sample size is 1700 samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.5. Measurements are made on a production test boards, which can show a variance of up to 1dB in Gain and OIP3 compared to a soldered-down
demo board. Circuit trace losses have not been de-embedded from actual measurements.
3
electrical Specifications[6][9]
TA = 25°C, Vdd = 5V, Vctrl = 2.7V, RF performance at 900 MHz, given for each of the 2 RF paths, measured on evaluation
board (see Fig. 5) unless otherwise specified.
Symbol parameter and Test Condition Units Min. Typ. Max.
Vdd Supply Voltage V - 5.0 -
Vctrl Control Voltage V - 2.7 -
Idd Quiescent Supply Current mA 180 240 280
Gain Gain dB 29.6 31 32.6
OIP3[7] Output Third Order Intercept Point dBm 39 43 -
NF[8] Noise Figure dB - 0.6 1.0
OP1dB Output Power at 1dB Gain Compression dBm 26.5 27.7 -
S11 Input Return Loss, 50Ω source dB - -10 -
S22 Output Return Loss, 50Ω load dB - -14 -
S12 Reverse Isolation dB - 45 -
ISO1-2 Isolation between RF Input 1 and RF Input 2 dB - 27 -
Notes: 6. Measurement at 900MHz obtained using demo board described in Figure 5.7. 900MHz OIP3 test condition: FRF1 = 900 MHz, FRF2 = 901 MHz with input power of -20 dBm per tone.8. Circuit trace losses have not been de-embedded from actual measurements.9. Use proper bias, board, heatsink and derating designs to ensure maximum junction temperature is not exceeded. See absolute maximum ratings
and application note for more details.
4
Demo Board Schematic
50-Ohms TL
50-Ohms TL
50-Ohms TL
50-Ohms TL
Vsup
ply
Bias
2
C3
Vsen
se38
Bias
1
Vsup
ply
1,2,
19,2
0
match
match
Bias
Bias
1,2,
19,2
0
C5 C1
C6 C8 C10
Module outline
2
5
3,4
6
1,22
7 8 9 10 11
12
13
14,15
16
17,181921 20
Vsup
ply
10Bi
as2
Bias
2
Vsen
se
Bias
1
Vsup
ply
Inputmatch
Interstagematch
Outputmatch
Inputmatch
Interstagematch
Outputmatch
Bias
Bias
Figure 6. evaluation Board Schematic Diagram
ALM-1522 Demo Board Layout
10 1
RF input 1
Ground20-pin Connector
RF input 2
RF output 1
RF output 2
Vsupply 1,2
Pinout Designation
Figure 5. evaluation Board Layout Diagram
Recommended PCB material is 10 mils Rogers RO4350.
Suggested component values may vary according to layout and PCB material.
Single-ended Demo Board Layout
Circuit Symbol Size Description
C1, C10 0805 2.2uF ceramic
C2, C7 0402 Not used
C3, C6 0402 0.1uF ceramic
C4, C9 0402 Not used
C5, C8 0402 0.1uF ceramic
5
ALM-1522 Single-ended Typical performance Curves
Vdd = 5V, Vctrl = 2.7V, Frequency = 900 MHz, measured on evaluation board (see Figure 5) unless otherwise specified.
Figure 7. Idd vs. Temperature Figure 8. Idd vs. Vctrl and Temperature
Figure 9. NF vs. Frequency and Temperature Figure 10. Gain vs. Frequency and Temperature
Figure 11. oIp3 vs. Frequency and Temperature Figure 12. op1dB vs. Frequency and Temperature
100120
140160180200
220240260
280300
-40 -20 0 20 40 60 80 100Temperature °C
Idd
(mA)
0
50
100
150
200
250
300
350
2 2.2 2.4 2.6 2.8 3 3.2Vctrl (V)
Idd
(mA)
0
0.2
0.4
0.6
0.8
1
700 800 900 1000 1100Frequency (MHz)
NF (d
B)
26
27
28
29
30
31
32
33
34
35
700 800 900 1000 1100Frequency (MHz)
Gain
(dB)
33
35
37
39
41
43
45
47
49
700 800 900 1000 1100Frequency (MHz)
OIP3
(dBm
)
24
25
26
27
28
29
30
700 800 900 1000 1100Frequency (MHz)
P1dB
(dBm
)
-40°C25°C85°C
-40°C25°C85°C
-40°C25°C85°C
-40°C25°C85°C
-40°C25°C85°C
6
Figure 13. NF vs. Vctrl and Temperature Figure 14. Gain vs. Vctrl and Temperature
Figure 15. oIp3 vs. Vctrl and Temperature Figure 16. op1dB vs. Vctrl and Temperature
Figure 17. S11 & S22 vs. Frequency (0.1 to 2GHz) Figure 18. S21 & S12 vs. Frequency (0.1 to 2GHz)
0
0.2
0.4
0.6
0.8
1
2 2.2 2.4 2.6 2.8 3 3.2Vctrl (V)
NF (d
B)
26
27
28
29
30
31
32
33
34
35
2 2.2 2.4 2.6 2.8 3 3.2Vctrl (V)
Gain
(dB)
33
35
37
39
41
43
45
47
49
2 2.2 2.4 2.6 2.8 3 3.2Vctrl (V)
OIP3
(dBm
)
24
25
26
27
28
29
30
2 2.2 2.4 2.6 2.8 3 3.2Vctrl (V)
P1dB
(dBm
)
-50
-40
-30
-20
-10
0
10
0 500 1000 1500 2000Frequency (MHz)
S11
(dB)
& S2
2 (d
B)
S11S22
-60
-40
-20
0
20
40
0 500 1000 1500 2000Frequency (MHz)
S21
(dB)
-100
-80
-60
-40
-20
0
S12
(dB)
-40°C25°C85°C
-40°C25°C85°C
-40°C25°C85°C
-40°C25°C85°C
S11S22
7
Figure 19. S11 & S22 vs. Frequency (0.1 to 20GHz) Figure 20. S21 & S12 vs. Frequency (0.1 to 20GHz)
Figure 21. Stability vs. Frequency (0.1 to 20GHz) Figure 22. Channel Isolation vs. Frequency (0.1 to 2GHz)
-50
-40
-30
-20
-10
0
10
0 2 4 6 8 10 12 14 16 18 20Frequency (GHz)
S11
(dB)
& S2
2 (d
B)
-60
-40
-20
0
20
40
0 2 4 6 8 10 12 14 16 18 20Frequency (GHz)
S21
(dB)
-100
-80
-60
-40
-20
0
S12
(dB)
-50
-40
-30
-20
-10
0
0 400 800 1200 1600 2000Frequency (MHz)
Chan
nel I
sola
tion
(dB)
Ch1Ch2
01
23
45
67
89
10
0 4 8 12 16 20Frequency (GHz)
K, M
u, M
u'
KMuMu'
S11S22
S21S12
8
Balanced Amplifier Demo Board Layout
Circuit Symbol Size Description Value
C1, C10 0805 Ceramic capacitor 2.2uF
C3, C5, C6, C8 0402 Ceramic capacitor 0.1uF
C2, C4, C7, C8 0402 Not used
R1, R4 0402 Not used
R2, R3 0402 Resistor 50Ω
Coupler 16.51mmx12.19mm Anaren Xinger II XC0900L-03S
Figure 23. Suggested Balanced Amplifier evaluation Board Layout Diagram
Recommended PCB material is 10 mils Rogers RO4350.
Suggested component values may vary according to layout and PCB material.
Coupler operating frequency specified from 800MHz to 1000MHz
Balanced Demo Board Schematic
50-Ohms TL
50-Ohms TL
50-Ohms TL
50-Ohms TL
Vsup
ply
8Vc
trl
C3
Vsen
se38
Vctr
l
Vsup
ply
1,2,
19,2
0
Inputmatch
Interstagematch
Outputmatch
Inputmatch
Interstagematch
Outputmatch
Bias
Bias
1,2,
19,2
0
C5 C1
C6 C8 C10
Module outline
2
5
3,4
6
1,22
7 8 9 10 11
12
13
14,15
16
17,181921 20Coupler Coupler
R3
R2
RF Input
RF Output
Figure 24. evaluation Board Schematic for Balanced Amplifier
9
Balanced Amplifier Typical performance Curves
Vdd = 5V, Vctrl = 2.7V, Frequency = 900 MHz, measured on evaluation board (see Figure 23) unless otherwise specified.
Figure 25. Balanced mode NF vs. Frequency Figure 26. Balanced mode Gain vs. Frequency
Figure 27. Balanced mode oIp3 vs. Frequency Figure 28. Balanced mode op1dB vs. Frequency
Figure 29. Balanced mode S11 & S22 vs. Frequency (0.1 to 2GHz) Figure 30. Balanced mode S21 and S12 vs. Frequency (0.1 to 2GHz)
S21S12
0
0.2
0.4
0.6
0.8
1
700 800 900 1000 1100Frequency (MHz)
NF (d
B)
26
27
28
29
30
31
32
33
34
35
700 800 900 1000 1100Frequency (MHz)
Gain
(dB)
30
32
34
36
38
4042
44
46
48
50
700 800 900 1000 1100Frequency (MHz)
OIP3
(dBm
)
26
27
28
29
30
31
32
700 800 900 1000 1100Frequency (MHz)
P1dB
(dBm
)
-50
-40
-30
-20
-10
0
10
0 500 1000 1500 2000Frequency (MHz)
S11
(dB)
& S2
2 (d
B)
-60
-40
-20
0
20
40
0 500 1000 1500 2000Frequency (MHz)
S21
(dB)
-100
-80
-60
-40
-20
0S1
2 (d
B)
S11S22
10
Figure 31. Balanced mode S11 & S22 vs. Frequency (0.1 to 6GHz) Figure 32. Balanced mode S21 and S12 vs. Frequency (0.1 to 6GHz)
Figure 33. Balanced mode Stability vs. Frequency (0.1 to 6GHz)
package Dimensions
Laser Marking, POD, Stencil
S21S12
-50
-40
-30
-20
-10
0
10
0 1000 2000 3000 4000 5000 6000Frequency (MHz)
S11
(dB)
& S2
2 (d
B)
-60
-40
-20
0
20
40
0 1000 2000 3000 4000 5000 6000Frequency (MHz)
S21 (
dB)
-100
-80
-60
-40
-20
0
S12 (
dB)
01
23
45
67
89
10
0 1 2 3 4 5 6Frequency (GHz)
K, M
u, M
u'
S11S22
KMuMu'
1522wwYYXXXX
11
part Number ordering Information
part Number No. of Devices Container
ALM-1522-BLKG 100 Antistatic bag
ALM-1522-TR1G 1000 7” Reel
ALM-1522-TR2G 3000 13” Reel
Device orientation
USER FEED DIRECTION
TOP VIEW END VIEWUSERFEED DIRECTION
COVER TAPE
CARRIERTAPE
REEL
1522WWYYXXXX
1522WWYYXXXX
Tape Dimensions
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. AV02-1723EN - February 17, 2009
Reel Dimensions
Ø178
.0±
1.0
Ø55.
0±0.
5
SEE DETAIL "X"
65° 45°
60°
Ø51.2±0.3
Slot hole ‘a’
RECYCLE LOGO FRONT VIEW
-0.0+1.5*
8.4
FRONT BACK
FRONT BACK
Ø178.0±1.0
7.9 - 10.9*
Slot hole ‘b’
BACK VIEW
R5.2
R10.65
EMBOSSED RIBSRAISED: 0.25mm, WIDTH: 1.25mm
14.4*MAX.