A451

Surface Science 174 (1986) 431-432 431 North-Holland, Amsterdam

TRAPPING IN AIGaAs/GaAs M O D U L A T I O N - D O P E D F I E L D E F F E C T T R A N S I S T O R S AT R O O M T E M P E R A T U R E

M.I. N A T H A N , P.M. M O O N E Y , P.M. S O L O M O N and S .L W R I G H T

IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA Received 1 August 1985; accepted for publication 15 September 1985

Surface Science 174 (1986) 433-438 North-Holland, Amsterdam

E L E C T R O N I C P R O P E R T I E S O F Si A T O M I C - P L A N A R - D O P E D G a A s / A I A s Q U A N T U M W E L L S T R U C T U R E S G R O W N BY M B E

Shigehiko SASA, Kazuhi ro K O N D O , Hideaki I S H I K A W A , Toshio F U J I I , Shunichi M U T O and Satoshi H I Y A M I Z U

Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan

Received 29 July 1985; accepted for publication 14 November 1985

433

Optical and electrical properties of silicon atomic-planar-doped (Si-PD) (GaAs),,/(AIAs)5 multiquantum well structures (m = 3-13; 30 periods) were measured to study the energy band structure in ultrathin quantum well layers. Reduction of photoluminescence intensity for m = 3 suggests the conduction band crossover (direct-indirect transition) in the GaAs region.

Surface Science 174 (1986) 439-443 North-Holland, Amsterdam

A H A R O N O V - B O H M O S C I L L A T I O N S D U E T O Q U A N T U M I N T E R F E R E N C E B E T W E E N PARALLEL Q U A N T U M W E L L S

S. D A T T A , S. B A N D Y O P A D H Y A Y and M.R. M E L L O C H

School of Electrical Engineering, Purdue University, West Lafayette, lndiana 47907, USA

R. R E I F E N B E R G E R , M. M I L L E R and M. V A Z I R I

Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA

and

T. D U N G A N , M. C A H A Y and R. N O R E N

School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907, USA

Received 1 August 1985; accepted for publication 13 November 1985

439

This paper examines theoretically several novel double quantum well structures that could exhibit interference between currents flowing in two parallel channels. This is a new effect with potential applj'cations in switching devices, as a "quantum interference transistor", requiring extremely low drain and gate voltages.