Advanced Concepts, Part 1dspace.mit.edu/bitstream/handle/1721.1/92922/2-627-fall... · 2019. 9....

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Advanced Concepts, Part 1 Lecture 15 – 11/3/2011 MIT Fundamentals of Photovoltaics 2.626/2.627 Joseph T. Sullivan 1

Transcript of Advanced Concepts, Part 1dspace.mit.edu/bitstream/handle/1721.1/92922/2-627-fall... · 2019. 9....

  • Advanced Concepts, Part 1

    Lecture 15 – 11/3/2011 MIT Fundamentals of Photovoltaics

    2.626/2.627 Joseph T. Sullivan

    1

  • Cells are done!

    2

  • Contact Firing

    0

    100

    200

    300

    400

    500

    600

    700

    800

    900

    20 70 120

    Tem

    p [

    C]

    time [sec]

    Actual

    Dupont Sample Profile

    LAB

    INDUSTRY

    Torrey Hills

    MPTC

    Please see the lecture 15 video for lab equipment visuals.

    3

  • Effect of Shadowing Losses

    4mm spacing 2mm spacing

    ISC = 0.62A ISC = 0.60A

    4

  • What’s Limiting Performance?

    0.1

    0.11

    0.12

    0.13

    0.14

    0.15

    0.16

    0.17

    0.18

    0.19

    0.2

    0 0.2 0.4 0.6 0.8 1 1.2

    PM

    ax [

    W]

    Series Resistance [Ohms]

    Rs

    What are the different forms of series resistance?

    5

  • Performance in the Field: Temperature, Shading, and

    Mismatch

    6

  • Why Temperature Matters

    • Solar cell efficiency measurements are performed at 25°C

    • Most Semiconductor simulations occur at 300K (27°C)

    • Typical Solar Cell operate at 50-65°C

    7

  • Effect of Temperature

    What do you think will happen with Voc with temperature?

    Source: PV CDROM 8

  • DEMO!

    Voc

    HEAT 9

  • Voc Decreases with Temperature

    ***Where VG0 = qEG0, where EG0 is the band gap at absolute zero Source: PV CDROM

    0.09V decrease if operating at 65°C!

    Courtesy of PVCDROM. Used with permission.

    10

    http://www.pveducation.org/pvcdrom

  • Effect of Temperature

    What do you think will happen with ISC with temperature? 11

  • DEMO 2!

    ISC

    HEAT

    A

    12

  • ISC increases with Temperature

    • Recall:

    – ISC ≈ IL

    • IL increases with the flux of photons of energy greater than the EG.

    • EG decreases with increased temperature.

    Source: PV CDROM

    VERY SMALL EFFECT!

    13

  • Band Gap Dependence on Temperature

    1.06

    1.08

    1.1

    1.12

    1.14

    1.16

    1.18

    0 100 200 300 400 500 600

    Ban

    d G

    ap [

    eV

    ]

    Temperature [K]

    14

  • Temperature Decreases Overall Efficiency

    Green, M. A., "Solar cell fill factors: General graph and empirical expressions", Solid-State Electronics, vol. 24, issue 8, pp. 788 - 789, 1981. Source: PV CDROM

    η decreases ~ 0. 5% per °C for Si

    15

    Courtesy of PVCDROM. Used with permission.

    http://www.pveducation.org/pvcdrom

  • Effect of Light Intensity (C)

    To first order:

    Isc C IL

    Voc kBT

    qlnC Isc

    Io

    JscVoc C ln C

    Linear dependence of Isc on X:

    Log dependence of Voc on X:

    Dependence of Efficiency:

    In-class example: http://www.pveducation.org/pvcdrom/solar-cell-operation/effect-of-light-intensity

    Beware the increased impact of series resistance!

    16

    http://www.pveducation.org/pvcdrom/solar-cell-operation/effect-of-light-intensity

  • Module vs Cell Efficiency

    Cells in Series in a Module are matched by cell with the lowest current. Voltages add.

    I

    V

    I

    V

    I

    V

    17

  • Effect of Shading

    I

    V

    I

    V

    I

    V

    18

  • Module vs Cell Efficiency Cells in Parallel in a Module are matched in voltage. Currents add.

    I

    V

    I

    V

    I

    V

    19

  • Effect of Inhomogeneities

    Source: PV CDROM 20

    Courtesy of PVCDROM. Used with permission.

    http://www.pveducation.org/pvcdrom

  • Effect of Inhomogeneities

    B.L. Sopori and W. Chen, J. Cryst. Growth 210, 375 (2000)

    Larger samples tend to have greater inhomogeneities. “Good regions” and “bad regions” connected in parallel.

    Courtesy of Elsevier, Inc., http://www.sciencedirect.com. Used with permission.

    21

    http://www.sciencedirect.com

  • Richard M. Swanson (SunPower)

    Gap Between Record Cells and Modules

    © IEEE. All rights reserved. This content is excluded from our Creative Commons license. For moreinformation, see http://ocw.mit.edu/fairuse.

    Source: Fig. 6 in Swanson, Richard M. “Developments in Silicon Solar Cells.” Proceedings of the IEEEInternational Electron Devices Meeting (2007): 359–62.

    22

    http://ocw.mit.edu/fairuse

  • Advanced Concepts

    23

  • 1st gen = single bandgap

    High cost

    15-20% efficient

    2nd gen = thin films

    Low cost

    8-14% efficient

    3rd gen = advanced concepts

    Low cost

    >25% efficiency

    Third Generation Solar Cells

    “Third Generation Photovoltaics”, Materials Review v10 (2007)

    0%

    20%

    40%

    60%

    80%

    100%

    0 100 200 300 400 500

    Sola

    r C

    ell

    Effi

    cie

    ncy

    Cost [$/m2]

    $3.50/W

    $1.00/W

    $0.50/W $0.20/W $0.10/W

    I II

    III

    )(

    2m// WW

    $$

    2m

    24

  • Intermediate Band Materials

    25

  • Absorption of Photons in a Semiconductor

    Conduction Band

    Valence Band

    E

    DOS

    e-

    e-

    e-

    Eg

    E

    26

  • Added Absorption Pathway in IB Semiconductor

    Conduction Band

    Valence Band

    Eg

    E

    DOS

    e-

    e-

    e-

    e-

    e-

    e-

    E

    27

  • Theoretical Efficiency Gain From IB Solar Cells1

    Gen 1 limit

    IB Limit

    © American Physical Society. All rights reserved. This content is excluded from our CreativeCommons license. For more information, see http://ocw.mit.edu/fairuse.Source: Luque, A. and A. Marti. "Increasing the Efficiency of Ideal Solar Cells by Photon

    Induced Transitions and Intermediate Levels." Phys. Rev. Lett. 78, no. 26 (1997): 5014-7. 28

    http://ocw.mit.edu/fairuse

  • How to Create an IB?

    • Three approaches:

    – Impurity band

    – Highly-mismatched alloys (Band Anti-crossing)

    – Quantum dot arrays

    E

    DOS 29

  • Impurity Band

    ND

    < N

    crit

    aB

    [1] A. Luque, A. Martí, E. Antolín, and C. Tablero, Physica B 382, 320 (2006) [2] A. Luque and A. Martí, Solid State Phenomena 156-158, 107 (2010)

    30

  • Impurity Band

    Ncrit1/3 * aB~0.26

    ND

    > N

    crit

    N

    D <

    Ncr

    it

    aB

    [1] A. Luque, A. Martí, E. Antolín, and C. Tablero, Physica B 382, 320 (2006) [2] A. Luque and A. Martí, Solid State Phenomena 156-158, 107 (2010)

    31

  • Quantum Dot/Well

    N. Lewis, Science 315 (2007) 798

    © AAAS. All rights reserved. This content is excluded from our Creative Commons license. Formore information, see http://ocw.mit.edu/fairuse.Source: Fig. 2 in Lewis, Nathan. “Toward Cost-Effective Solar Energy Use.” Science 315(2007): 798-801.

    32

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  • López et al. “Engineering the Electronic Band Structure for Multiband Solar Cells.” Phys. Rev. Lett. 106, no. 2 (2011): 028701.

    Band-Anticrossing

    Yu et al. “Diluted II-VI oxide semiconductors with multiple band gaps.” Phys. Rev. Lett. 91, no. 24 (2003): 246403.

    Please see lecture 15 video or the references below for relevant band diagram visuals.

    33

  • Hot Carrier Cells

    34

  • Hot carrier cells

    - Thermalization (pathway 1, left) accounts for a large efficiency loss, especially in small-bandgap materials.

    - Hot carrier cells aim to collect carriers before they decay from an excited state. Carriers either move very quickly, and/or are inhibited from decaying. Band structure and contacts must also be properly designed.

    - Theoretical efficiency limit for hot carrier cell: 86.8%.

    Challenges: - Practical implementation difficult. - Must compete with highly-efficient processes (e.g., thermalization).

    M.A. Green, Physica E 14 (2002) 65 Courtesy of Elsevier, Inc., http://www.sciencedirect.com. Used with permission.

    35

    http://www.sciencedirect.com

  • Hot carrier cells

    Approach #1: Slow Carrier Cooling (e.g., by interruption of phonon modes)

    G.J. Conibeer et al., Thin Solid Films. 516, 6948 (2008)

    Goal: To slow carrier cooling by modifying material parameters and geometry, to prolong excited charge states in the conduction band.

    Courtesy of Elsevier, Inc., http://www.sciencedirect.com. Used with permission.

    36

    http://www.sciencedirect.com

  • Hot carrier cells

    Approach #2: Selective Energy Contacts

    G.J. Conibeer et al., Thin Solid Films 516 6968 (2008)

    Goal: To extract hot carriers from devices, e.g., via resonant tunneling contacts.

    Courtesy of Elsevier, Inc., http://www.sciencedirect.com. Used with permission.

    37

    http://www.sciencedirect.com

  • Emerging Tech: Bulk Thin Films

    38

  • Last Classes: Summary of the Most Common Commercial and Nearly-Commercial PV Technologies

    Common Deposition/Growth Method

    Sample Companies Typical Commercial Cell Efficiencies

    Wafer-Based Monocrystalline Silicon (sc-Si)

    Czochralski (CZ) SunPower, REC, Sanyo…

    18-22%

    Multicrystalline Silicon (mc-Si)

    Directional solidification (Bridgman)

    Q-Cells, Suntech, REC, Solarworld…

    16-17.5%

    Ribbon Silicon String Ribbon (SR) Evergreen Solar, Sovello…

    ~15.5%

    Thin Film Cadmium Telluride (CdTe)

    Chemical vapor deposition (CVD) on glass

    Pureplays (First Solar) ~11%

    Amorphous Silicon (a-Si) and variants

    Plasma-enhanced chemical vapor deposition (PECVD) on glass or metal substrates

    Pureplays (Energy Conversion Devices) Turnkey System Manufacturers (Oerlikon)

    ~6-9%

    Copper Indium Gallium Diselenide (CIGS)

    Variety: CVD, physical vapor deposition (PVD) on glass, metals.

    Start-ups (Nanosolar, Heliovolt)

    Pre-commercial: 6-14% reported.

    39

  • Finding Earth-Abundant Thin Films

    • CuInGaSe2 – Alternative: Cu2ZnSnSe4 (CZTS)

    Todorov et al. High‐Efficiency Solar Cell with Earth‐Abundant Liquid‐Processed Absorber. Adv. Mater. 22, E156-E159 (2010). D. Mitzi et al., “The path towards a high-performance solution-processed kesterite solar cell,” Solar Energy Materials and Solar Cells, in press (2011).

    © Wiley. All rights reserved. This content is excluded from our CreativeCommons license. For more information, see http://ocw.mit.edu/fairuse.

    40

    http://ocw.mit.edu/fairuse

  • Wadia et al. Materials availability expands the opportunity for large-scale photovoltaics deployment. Environmental science & technology (2009) vol. 43 (6) pp. 2072-2077

    Materials Availability Limits Many PV Materials

    © American Chemical Society. All rights reserved. This content is excluded from ourCreative Commons license. For more information, see http://ocw.mit.edu/fairuse.

    41

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  • Raw Material Costs

    © American Chemical Society. All rights reserved. This content is excluded from ourCreative Commons license. For more information, see http://ocw.mit.edu/fairuse.

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  • Confined Parameter Space

    Many challenges in developing new materials

    Obtaining right stoichiometry is key!

    .

    S. Chen et al., Appl. Phys. Lett. 96, 021902 (2010) 43

    © AIP. All rights reserved. This content is excluded from our CreativeCommons license. For more information, see http://ocw.mit.edu/fairuse.

    © AIP. All rights reserved. This content is excluded from our CreativeCommons license. For more information, see http://ocw.mit.edu/fairuse.

    http://ocw.mit.edu/fairuse

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