Advance CMOS Cell Design-Book3

7/27/2019 Advance CMOS Cell Design-Book3

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Advance CMOS CellDesign

byEtienne Sicard and

Sonia Delmas Bendhia

Prepared by: Mac Chester D. Saba

BSEcE 5-1


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1. How many transistors does Itanium 2

processor have?

A. 100 million

B. 200 million

C. 300 million

D. 400 million


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2. When does the Intel introduced the

complete industrial 90nm process?

A. 2000

B. 2003

C. 2006

D. 2009


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3. What boosts the performances of n-

channel and p-channel transistor?

A. Silicon oxide

B. Silicon dioxide

C. Strained silicon

D. all of the above


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4. What speeds up the hole mobility of p-

channel MOS devices?

A. Compressive strain

B. Compressive holes

C. Effective length

D. none of the above


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5. It is need for various purposes including

on-chip power supply decoupling, analog

filtering for wireless applications and high-

quality resonators for radio-frequencycircuits.

A. High-capacitance passive devices

B. Metal-Insulator-Metal C. MIM

D. all of the above


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6. These are vital components in modern

ICs.

A. Conductor memories

B. Semiconductor memories

C. Volatile memories

D. all of the above


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7. It represent roughly 30% of the global

IC market.

A. Stand-alone memories

B. RAM

C. ROM



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8. Two main classes of memories.

A. Volatile and RAM

B. ROM and RAM

C. Volatile and non-volatile

memories

D. PROM and EPROM


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9. Simplest type of non-volatile memory.

A. ROM

B. RAM

C. PROM

D. EPROM


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10. It has only one transistor, in order toimprove the memory matrix density by

almost one order of magnitude.

A. Dynamic ROM

B. Dynamic RAM

C. Dynamic PROM

D. Dynamic EPROM


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11. What is the basic element of anElectrically Erasable PROM (EEPROM)

memory.

A. Floating-polysilicon layer

B. Floating-source transistor

C. Floating-drain transistor

D. Floating-gate transistor


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12. It can be programmed electrically bit-by-bit but can only be erased by blocks.

A. RAM

B. ROM

C. Flash arrays

D. RAM arrays


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13. What type of memory are the mostadvanced of the flash memory

challengers?

A. Ferroelectric RAM

B. Ferroelectric ROM

C. Electric RAM

D. Electric ROM


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14. It is an updated version of the verypopular simple as possible computer

architecture.

A. Simple Microprocessor B. Super Simple Microprocessor

C. Very Simple Microprocessor

D. Ultra Simple Microprocessor


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15. It monitors the address of the activeinstruction.

A. Accumulator

B. Input Register

C. Arithmetic Unit

D. Program Counter


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16. It gives the opportunity to transferdata from the outside world to the

microprocessor.

A. Accumulator B. Input Register

C. Arithmetic Unit

D. Program Counter


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17. How long each instruction of the VSM?

A. 8 bits long

B. 16 bits long

C. 32 bits long

D. 64 bits long


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18. The structure of each sub-block of themicroprocessor is presented in detail

here.

A. Internal Bus B. Basic Block Design

C. Program Memory



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19. It contains versatile functions,configurable interconnects and an I/O

interface to adapt to the user

specification. A. FPDA

B. FPSA

C. FPGA D. none of the above


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20. The most versatile circuit to create aconfigurable logic function.

A. Look-up table

B. Multiplexors

C. Memory Points

D. Fuse and Antifuse


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21. These are essential components of theconfigurable logic blocks.

A. Look-up table

B. Multiplexors

C. Memory Points

D. Fuse and Antifuse


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22. It consists of a LUT, a D-register andsome multiplexors.

A. Programmable Logic Block

B. Programmable Interconnect Point

C. Switching Matrix

D. Array of Blocks


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23. This may be found in the advanced setof switches symbols.

A. Programmable Logic Block

B. Programmable InterconnectPoint

C. Switching Matrix

D. Array of Blocks


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24. What is a sophisticated programmableinterconnect point, which enables a wide

range of routing combinations within a

single interconnect crossing? A. Programmable Logic Block

B. Programmable Interconnect Point

C. Switching Matrix D. Array of Blocks


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25. What frequency range does themodern radio-frequency equipments

operates?

A. VHF and MF B. SHF and VHF

C. UHF and SHF

D. MF and UHF


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26. It is commonly used for filtering,amplifying, or for creating resonant

circuits used in radio-frequency

applications. A. Capacitor

B. Resistor

C. Transistor D. Inductor


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27. What is the range of the typical valueof on-chip inductance?

A. 0.1mH to 100mH

B. 0.1uH to 100uH

C. 0.1nH to 100nH

D. 0.1uH to 100nH


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28. It permits high voltage gain, and highselectivity in the frequency domain.

A. High quality factor Q

B. Gain

C. Attenuation

D. Noise


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29. What is the usual value for Q?

A. between 3 and 13

B. between 13 and 23

C. between 3 and 23

D. between 3 and 30


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It was a role to create aperiodic logic oranalog signal with a stable and predictable

frequency.

A. Power Amplifier B. Oscillator

C. Inductor

D. Phase Detector


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31. What is the simples phase detector?

A. XOR gate

B. XNOR gate

C. NAND gate

D. Inverter


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32. It may be used to transform afrequency into a voltage.

A. Voltage Controlled Oscillator

B. LC Oscillator

C. Phase Oscillator

D. Phase Lock Loop


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33. Its configuration consists of a networkof resistors alternating between R and 2R.

A. Resistance Ladder

B. R-2R Ladder

C. Switch Capacitors

D. Hold Circuits


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34. Its configuration consists of arrays ofcapacitors that are connected to switches,

in parallel.

A. Resistance Ladder B. R-2R Ladder

C. Switch Capacitors

D. Hold Circuits


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35. What is the most common low-speedanalog-to-digital converter?

A. Pipeline ADC converter

B. Iterative converter

C. Flash converter

D. all of the above


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36. It consists of two or more stagesconnected in serial, each containing a low

resolution ADC and DAC converter.

A. Pipeline ADC converter B. Iterative converter

C. Flash converter

D. all of the above


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37. What is one of the simplesttemperature sensing elements?

A. pn diode

B. np diode

C. pnp

D. npn


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38. What is the interface between IC dieand the package?

A. Bonding Wire

B. Bonding Pad

C. Pad Ring

D. Supply Rails


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39. It consists of several pads on each ofthe four sides of the IC, to interface with

the outside world.

A. Bonding Wire B. Bonding Pad

C. Pad Ring

D. Supply Rails


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40. A type of resistor that is completelyembedded in oxide, and can therefore

handle very high voltage stress.

A. Polysilicon resistor B. Nwell resistor

C. Potentiometer

D. all of the above


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41. The invert mode of a normal diode.

A. pn diode

B. np diode

C. zener diode

D. all of the above


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42. It is a key device for the developmentof 10 to 20 GHz processors.

A. MHz transistor

B. GHz transistor

C. THz transistor

D. kHz transistor


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43. It appears when an n-channel MOStransistor passes a strong current

between the drain and the source.

A. Memory effect B. Kink effect

C. Both a and b


Advance CMOS Cell Design-Book3

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