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2 The electrons in a piece of n‐type semiconductor take 10 ps to cross from one end to
another end when a potential of 1 V is applied across it. Find the length of the
semiconductor bar.
Solution
2
4
10 ps
But E and
10ps 10ps 1350 1
1.16 10 cm 1.16 m
n
n
L
VV
V EL
L V
L
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3 A current of 0.05 μA flows through an n‐type silicon bar of length 0.2 μm and cross
section area of 0.01 μm 0.01 μm when a voltage of 1 V is applied across it. Find the doping
level at room temperature.
Solution
12 2
drift
2102
2 2
4
0.05 A
0.2 m
0.01 m 0.01 m 1 10 cm
----(1)
1.08 10
1350 / (V.s) 480 cm /(V.s)
15 10 V / cm
0.2 m
Substituting these values in Eq. (1) we ge
tot n p
i
n p
I
L
A
I I q n p AE
np
n n
cm
V VE
L
10 26 19 12 4
15 3
t
(1.08 10 ) 4800.05 10 1.6 10 1350 10 5 10
4.63 10 cm .
A nn
n
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4. Repeat Problem 2.3 for Ge. Assume μn=3900cm2/(V·s) and μp =1900cm2/(V·s). In order to obtain the doping level proceed as follows. We use the formula
1( )n pq n p
For n-type semiconductor n>>p, and hence
1nnq
Given:-
2
2
2
0.05 A0.2 m
(0.01 m)1V
3900cm / (V s)
1900cm / (V s)n
p
Il
AV
Resistance of the Ge bar;
1V0.05 A20MΩ
VRI
Therefore resistivity,
2(0.01 m)20MΩ0.2 m
1 cm
ARl
Again, 1
nne
or, 1
n
ne
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Substituting the values, we get
19 2
16 3
15 3
11 cm 1.6 10 3900cm / (V s)
16.24 10 cm
1.6 10 cm
DN n
Since at room temperature all the impurities are ionized and hence carrier concentration n is equal to the doping density.
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9 A Si semiconductor cube with side equal to 1 μm is doped with 4 1017 cm–3
phosphorous impurities. Calculate the drift current when a voltage of 5 V is applied across it.
Solution
17 3
2 10 2
17
2 2
4
8 2
4 10 cm
(1.08 10 )291.6
4 10
1350cm /(V.s) and 480 cm /(V.s)
5V5 10 /cm
1 m
1 m 1 m 10 cm
Since , we can write
0.0432A
i
n p
n p
tot n
n
np
n
VE V
L
A
n
I qn AE
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10 One side of pn junction is doped with pentavalent impurities which gives a net
doping of 5 1018 cm–3. Find the doping concentration to be added to the other side to get a
built‐in potential of 0.6 V at room temperature.
Solution
0 2
18 3 10 30
1811 3
10 2
ln
5 10 cm , 26 mV, 1.08 10 cm , 0.6 V
5 10 0.6 0.026 ln 2.45 10 cm
(1.08 10 )
A DT
i
D T i
AA
N NV V
n
N V n V
NN
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11 The built‐in potential of an equally doped pn junction is 0.65 V at room temperature.
When the doping level in n‐side is doubled, keeping the doping of the p‐side unchanged,
calculate the new built‐in potential and the doping level in P and N region.
Solution
0 2
10 30
15 310 2
15 15
0 10 2
ln
, 26 mV, 1.08 10 cm , 0.65 V
0.65 0.026 ln 2.89 10 cm
(1.08 10 )
2 2.89 10 2.89 10 0.026 ln 0.668 V
(1.08 10 )
A DT
i
A D T i
A AA
N NV V
n
N N V n V
N NN
V
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12 A silicon pn junction diode having ND = 1015 cm–3 and NA= 10
17 cm–3 gives a total
depletion capacitance of 0.41 pF/m2. Determine the voltage applied across the diode.
Solution
15 17
0 2 10 2
14 15 178 2
0 15 170
0
0
28
00
10 10ln 0.026ln 0.7144 V
(1.08 10 )
1 11.7 8.854 10 10 101.072 10 F/cm
2 2 (10 10 ) 0.7144
1
1.072 101 0.7144
0.41
A DT
i
si A Dj
A D
jj
R
jR
j
N NV V
n
q N NC
N N V
CC
V
V
CV V
C
8
4.167 V10
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14 Two identical pn junction diodes are connected in series. Calculate the current
flowing through each diode when a forward bias of 1 V is applied across the series
combination. Assume the reverse saturation current is 1.44 10–17 A for each diode.
Solution
A 1023.311044.11 9026.0
5.017
eeII T
F
V
V
SD
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16 Consider a pn junction in forward bias. Initially a current of 1 mA flows through it,
and the current increases by 10 times when the forward voltage is increased by 1.5 times.
Determine the initial bias applied and reverse saturation current.
Solution
1.5
7
1 mA (1)
10 mA (2)
ln(100) 0.239V0.5
From Eq. (1), we get 10 A
F
T
F
T
F
T
V
VD S
V
VS
V
VS
TF
S
I I e
I e
I e
VV
I
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