Abstract 10

Type :JOURNAL (Ty)

Journal Title - Journal of Physical Chemistry B (T2)

Volume - 109 (VL)

Issue - 42 (IS)

Start page - 19839 (SP)

End Page - 19844 (EP)

Published Year - 2005 (PY)

Morphological and spectroscopic properties of thin films of self-assembling amphiphilic

porphyrins on a hydrophilic surface as revealed by scanning near-field optical microscopy

(T1)

Nagahara, T1. Imura, K2. Okamoto, H3. Oguro, A4. Imahori, H5. (AU)

Institute for Molecular Science, Myodaiji, Okazaki 444-8585, Japan (AD)

Graduate University for Advanced Studies, Myodaiji, Okazaki 444-8585, Japan

Department of Molecular Engineering, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-Ku,

Kyoto 615-8510, Japan

Fukui Institute for Fundamental Chemistry, Kyoto University, 34-4, Takano-Nishihiraki-cho, Sakyo-ku, Kyoto 606-

8103, Japan

Abstract (AB)

We fabricated porphyrin thin films on mica surfaces from acidic aqueous solutions of the

preorganized H-aggregates of amphiphilic porphyrins by the simple spin-coating method. The

morphological and spectroscopic properties of the film were investigated by scanning near-field

optical microscopy. The results obtained in this study demonstrate that the preorganized structure

in solution can be transferred as a thin film with a thickness of the monolayer level without

losing their substantial structure and photophysical properties. Â© 2005 American Chemical

Society.

Cited By (since 1996):8 (N1)

Export Date: 14 October 2014 (N1)

Database: Scopus (DB)

References: (N1)

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UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-

27744594658&partnerID=40&md5=cd1c188c90e864fda2c1a090f264ee91

ER -

Type - JOURNAL

Journal Title - Journal of Alloys and Compounds

Volume - 612

Start Page - 34

End Page - 41

Published Year - 2014

A method based on optical and atomic force microscopes for instant imaging of non-

homogeneous electro-mechanical processes and direct estimation of d ij coefficients in

piezoelectric materials at the local level

Stamopoulos, D. Zhang, S.J.

Institute of Advanced Materials, Physicochemical Processes, Nanotechnology and Microsystems, National Center

for Scientific Research 'Demokritos', 15310 Agia Paraskevi, Greece

Materials Research Institute, Pennsylvania State University, University Park, PA 16801, United States

Abstract

Ferroelectric materials have attracted much interest due to their wide and important

technological applications. Regarding their piezoelectric properties, these materials are evaluated

by means of relatively complicate global methods. In this work a comparatively simple and

efficient local method for the direct estimation of the dij coefficients is presented. The method is

based on conventional optical microscopy (OM) and advanced Atomic Force Microscopy (AFM)

employed to image the local deformation of a specimen upon variation of a dc electric field. The

feasibility and reliability of the method is demonstrated at room temperature in single crystals of

(1-x)Pb(Mg1/3Nb 2/3)O3-xPbTiO3. Non-homogeneous electro-mechanical processes are

detected. Accordingly, the estimated d ij coefficients exhibit a spatial variation over the crystal

surface. Except for electro-mechanical systems, the introduced local method could find wide

application for the investigation of spatially non-homogeneous properties that possibly exist in

relevant magneto-mechanical and thermo-mechanical complex systems. Â© 2014 Elsevier B.V.

All rights reserved.

Keyword: Atomic force microscope, Non-homogeneous electro-mechanical processes, Optical

microscope, Piezoelectric coefficients, Strain-electric field curve

Cited By (since 1996):1

Export Date: 14 October 2014

Database: Scopus

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84902688924&partnerID=40&md5=ca2d7baa4071c9d0f35ec804ab7c2cf1

ER -

Type - JOURNAL

Journal Title - Reviews of Modern Physics

Volume - 75

Issue - 3

Start Page - 949

End Page - 983


Advances in atomic force microscopy

Giessibl, F.J.

Experimentalphysik VI, Institute of Physics, Augsburg University, D-86135 Augsburg, Germany

Abstract

This article reviews the progress of atomic force microscopy in ultrahigh vacuum, starting with

its invention and covering most of the recent developments. Today, dynamic force microscopy

allows us to image surfaces of conductors and insulators in vacuum with atomic resolution, The

most widely used technique for atomic-resolution force microscopy in vacuum is frequency-

modulation atomic force microscopy (FM-AFM). This technique, as well as other dynamic

methods, is explained in detail in this article. In the last few years many groups have expanded

the empirical knowledge and deepened our theoretical understanding of frequency-modulation

atomic force microscopy. Consequently spatial resolution and ease of use have been increased

dramatically. Vacuum atomic force microscopy opens up new classes of experiments, ranging

from imaging of insulators with true atomic resolution to the measurement of forces between

individual atoms.



Scopus

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0141990921&partnerID=40&md5=a01f80a74adac4f22121e2d67580891f

ER -

Type JOURNAL

Journal Title - Sensors and Actuators, A: Physical

Volume - 216

Start Page - 231

End Page - 236


Fabrication and characterization of large-area flexible microfluidic organic light-emitting

diode with liquid organic semiconductor

Tsuwaki, M. Kasahara, T. Edura, T. Matsunami, S. Oshima, J. Shoji, S. Adachi, C. Mizuno, J.

Department of Nanoscience and Nanoengineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555,

Japan

Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi,

Fukuoka 819-0395, Japan

Nissan Chemical Industries, Ltd., 2-10-1 Tsuboi-nishi, Funabashi, Chiba 274-8507, Japan

Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda tsurumakicho, Shinjuku, Tokyo

162-0041, Japan

Abstract

We propose simple and high-throughput fabrication of large-area flexible microfluidic organic

light-emitting diodes (microfluidic OLEDs). Flexible electro-SU-8-microchannels with a liquid

emission layer were fabricated by the following four steps: (a) screen printing for transparent

electrodes, (b) novel belttransfer exposure for SU-8, (c) heterogeneous low-temperature bonding

using self-assembled monolayers (SAMs), and (d) injecting a liquid emitter into the

microchannels. 1-Pyrenebutyric acid 2-ethylhexyl ester (PLQ), which is on of liquid organic

semiconductors, was used as a liquid emitter. The liquid emitter successfully filled the flexible

microchannels, and electroluminescence was obtained both in flat and curved states. The

proposed microfluidic OLED is applicable for future flexible posters or displays, and can be

adopted around curved surfaces. Â© 2014 Elsevier B.V. All rights reserved.

Keywords: Belt-transfer exposure, Flexible OLED, Liquid emitter, Liquid OLED, Liquid organic semiconductor,

Microfluidic OLED


Database: Scopus

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3D-scaffold (2012) Chem. Commun., 48, pp. 5106-5108


84903279705&partnerID=40&md5=f8490722549f45f0ea9393c3a6becf90

ER -

Type - JOURNAL

Journal Title -Journal of Surface Science and Nanotechnology

Volume - 12

Start Page - 157

End Page - 164


Manipulation of organic molecules in ambient condition and liquid studied by scanning

tunneling microscopy

Takami, T.

Department of Physics, Konkuk University, 1 Hwayang-dong, Gwangjin-gu, Seoul 143-701, South Korea

VRI Inc. 4-13-13 Jingumae, Shibuya, Tokyo 150-0001, Japan

Abstract

This review describes how the manipulation of single molecules on solid state surface is

available in air or at the liquid/solid interface, observed with scanning tunneling microscope

(STM). First, the influences of the STM tip on the observation and manipulation of molecules

are discussed. Then how the STM tip induced the ordering and how the molecular structures on

the surface can be manipulated are shown. Second, the manipulation of single molecules with

STM tip is demonstrated. Last, the STM observations of the manipulation of molecules by

changing the ambient conditions such as solvent, photon irradiation, and electrochemical

potential, are shown. Â© 2014 The Surface Science Society of Japan.

Keywords: Atom/molecule manipulation, Graphite, Phthalocyanine, Porphyrin, Scanning

tunneling microscopy, Self-assembled monolayer


Database: Scopus

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84899002682&partnerID=40&md5=a4b8a64c52480cc00a50e301b835ace1

ER -

Type – JOURNAL

Journal Title - Applied Surface Science

Volume - 313

Start Page - 311

End Page - 319


Effect of nitrogen incorporation on the structural, optical and dielectric properties of

reactive sputter grown ITO films

Gartner, M. Stroescu, H. Marin, A. Osiceanu, P. Anastasescu, M. Stoica, M. Nicolescu, M. Duta,

M. Preda, S. Aperathitis, E. Pantazis, A. Kampylafka, V. Modreanu, M. Zaharescu, M.

Institute of Physical Chemistry Ilie Murgulescu, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest,

Romania

FORTH-IESL, Crete, Greece

Tyndall National Institute, University College Cork, Cork, Ireland

Abstract

The changes in the optical, microstructural and electrical properties, following the nitrogen

incorporation into indium tin oxide thin films are investigated. The films are formed by r.f.

sputtering from an indium-tin-oxide (80% In2O3-20% SnO2) target in a mixture of Ar and N2

plasma (75% N2-25% Ar and 100% N2 respectively) on fused silica glass substrate. The impact

of rapid thermal annealing (up to 500 Â°C, in N2 ambient) on the properties of indium tin

oxynitride (ITON) thin films is also reported. The UV-vis-NIR ellipsometry (SE)

characterization of ITON films was performed assuming several realistic approaches based on

various oscillator models, using a chemical composition gradient depth profiling, in agreement

with the X-ray photoelectron spectroscopy measurements. The Hall measurements show that the

ITON films prepared by r.f. sputtering in 75% N2 and annealed at 500 Â°C behave as degenerate

semiconductors. X-ray diffraction analysis proved that ITON thin films retain an amorphous

structure even after RTA at 500 Â°C in N 2 ambient and atomic force microscopy showed the

formation of continuous and smooth ITON thin films, with a morphology consisting in

quasispherical nanometric particles. Â© 2014 Elsevier B.V. All rights reserved.

Keywords: Hall measurements, ITON, r.f. sputtering, Spectroscopic ellipsometry, Surface

chemistry, Surface morphology


Data Base - Scopus

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84904809297&partnerID=40&md5=138c91c40105b9699a4ed15932c2b353

Type - JOURNAL

Volume - 314

Start Page - 1082

End Page - 1086



Electrical properties of SAM-modified ITO surface using aromatic small molecules with

double bond carboxylic acid groups for OLED applications

Can, M. Havare, A.K. Aydin, H. Yagmurcukardes, N. Demic, S. Icli, S. Okur, S.

Izmir Katip Celebi University, Faculty of Engineering, Department of Engineering Sciences, Ã‡iÇ§li, Izmir, Turkey

Toros University, Faculty of Engineering, Electric and Electronic Department, Mersin, Turkey

Izmir Institute of Technology, Material Science and Engineering, Izmir, Turkey

Izmir Katip Celebi University, Faculty of Engineering, Department of Material Science and Engineering, Ã‡iÇ§li,

Izmir, Turkey

Ege University, Solar Energy Institute, Izmir, Turkey

Abstract

5-[(3-Methylphenyl)(phenyl)amino]isophthalic acid (5-MePIFA) and 5-

(diphenyl)amino]isophthalic acid (5-DPIFA) organic molecules were synthesized to form self-

assembled monolayer on indium tin oxide (ITO) anode to enhance hole transport from ITO to

organic hole transport layers such as TPD. The modified surface was characterized by scanning

tunneling microscopy (STM). The change in the surface potential was measured by Kelvin probe

force microscopy (KPFM). Our Kelvin probe force microscopy (KPFM) measurements showed

that the surface potentials increased more than 100 mV with reference to bare indium tin-oxide.

The results show that the threshold voltage on OLEDs with modified ITO is lowered

significantly compared to OLEDs with unmodified ITO. The hole mobility of TPD has been

estimated using space-charge-limited current measurements (SCLC). Â© 2014 Elsevier B.V.

Keywords: Carboxylic acid, OLED, SAM, SCLC


Data Base - Scopus

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84906785720&partnerID=40&md5=d87b3ab0826115e8082f5ca700a2ed4d

ER -

Type - JOURNAL


Volume - 297

Start Page - 195

End Page - 204


Thermally induced evolution of sol-gel grown WO3 films on ITO/glass substrates

Caruso, T. Castriota, M. Policicchio, A. Fasanella, A. De Santo, M.P. Ciuchi, F. Desiderio, G. La Rosa, S. Rudolf,

P. Agostino, R.G. Cazzanelli, E.

Dipartimento di Fisica, UniversitÃ della Calabria, ponte Bucci cubo 31c, I-87036 Arcavacata di Rende, CS, Italy

CNR-IPCF UOS di Cosenza, Center of Excellence CEMIF.CAL, Licryl Laboratory, 87036 Rende, CS, Italy

Consiglio Nazionale Interuniversitario di Scienze Fisiche della Materia, via della Vasca Navale, 84, 00146 Roma,

Italy

Sincrotrone Trieste, Area Science Park, S.S. 14 km 163.5, I-34012 Basovizza, Trieste, Italy

Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, NL-9747AG Groningen,

Netherlands

Abstract

The electronic, morphological and structural properties of WO3 thin films, synthesized via a sol-

gel route and deposited on ITO/glass substrates by spin-coating, were analyzed as a function of

annealing temperature (100-700 C range) by Scanning Electron Microscopy, Atomic Force

Microscopy, micro-Raman spectroscopy, X-ray Diffraction and Photoelectron Spectroscopy. We

have found evidence of two competing processes when the film is annealed at high temperatures

(600-700 C): a structural phase transition from amorphous to crystalline WO3 and a temperature-

activated diffusion of sodium ions, from the substrate into the WO3 film, which induces the

formation of sodium tungstate. The surface of the films was found to be oxygen deficient after

deposition but reverted to fully oxidized WO3 after high temperature annealing in air. The

annealing also induced a restructuring of the films with formation of nano-crystalline aggregates.

The influence of film thickness on these processes was also investigated. Â© 2014 Elsevier B.V.

All rights reserved.

Keywords: Photoelectron spectroscopy, Raman spectroscopy, Sodium diffusion, Sol-gel, Thin

film annealing, Tungsten trioxide



Data Base - Scopus

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84894622567&partnerID=40&md5=674fc9a537f9196f30ebcff5cf0b2575

Type - JOURNAL

Journal Title - Journal of Industrial and Engineering Chemistry

Volume - 20

Issue - 4

Start Page - 1198

End Page - 1208


Organic materials for organic electronic devices

Lee, C.W. Kim, O.Y. Lee, J.Y.

Department of Polymer Science and Engineering, Dankook University, Jukjeon-dong, Suji-gu, Gyeonggi-do,

Yongin-si 448-701, South Korea

Abstract

In recent years, organic electronic devices which use organic materials as an active layer have

gained considerable interest as light-emitting devices, energy converting devices and switching

devices in many applications. In these organic electronic devices, the organic materials play a

key role of managing the device performances and various organic materials have been

developed to improve the device performances of organic electronic devices. In this paper, recent

developments of organic electronic materials for organic light-emitting diodes and organic solar

cells were reviewed. Â© 2013 The Korean Society of Industrial and Engineering Chemistry.

Keywords: Organic electronic devices, Organic light-emitting diode, Organic materials, Organic

solar cells



Data Base - Scopus

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84900814102&partnerID=40&md5=0cf92f87ed315fd78289fd5521ed92b0

Type - JOURNAL

Journal Title - Journal of Polymer Engineering

Volume - 34

Issue - 4

Start Page - 279

End Page - 338


Organic semiconductors for device applications: Current trends and future prospects

Ahmad, S.

Center of Excellence in Nanotechnology, Confederation of Indian Industry Western Region, Ahmedabad, Gujarat

380006, India

Abstract

With the rich experience of developing silicon devices over a period of the last six decades, it is

easy to assess the suitability of a new material for device applications by examining charge

carrier injection, transport, and extraction across a practically realizable architecture; surface

passivation; and packaging and reliability issues besides the feasibility of preparing mechanically

robust wafer/substrate of single-crystal or polycrystalline/ amorphous thin films. For material

preparation, parameters such as purification of constituent materials, crystal growth, and thin-

film deposition with minimum defects/disorders are equally important. Further, it is relevant to

know whether conventional semiconductor processes, already known, would be useable directly

or would require completely new technologies. Having found a likely candidate after such a

screening, it would be necessary to identify a specific area of application against an existing list

of materials available with special reference to cost reduction considerations in large-scale

production. Various families of organic semiconductors are reviewed here, especially with the

objective of using them in niche areas of large-area electronic displays, flexible organic

electronics, and organic photovoltaic solar cells. While doing so, it appears feasible to improve

mobility and stability by adjusting-conjugation and modifying the energy bandgap. Higher

conductivity nanocomposites, formed by blending with chemically conjugated C-allotropes and

metal nanoparticles, open exciting methods of designing flexible contact/interconnects for

organic and flexible electronics as can be seen from the discussion included here. Â© 2014

Walter de Gruyter GmbH, Berlin/Boston.

Keywords: Conjugated polymers, Crystalline/polycrystalline organic compounds, Hopping

conduction, Organic field-effect transistors, Organic semiconductors


Data Base - Scopus

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