'a1w¨Ë> EMI c0 . ± c0 . Xv¾O^8Ð4< EMI Immunity …...ßP} ¿P ¨ ¿k=± EMI c0 . Ly5 U,]5...
6
Transcript of 'a1w¨Ë> EMI c0 . ± c0 . Xv¾O^8Ð4< EMI Immunity …...ßP} ¿P ¨ ¿k=± EMI c0 . Ly5 U,]5...
![Page 1: 'a1w¨Ë> EMI c0 . ± c0 . Xv¾O^8Ð4< EMI Immunity …...ßP} ¿P ¨ ¿k=± EMI c0 . Ly5 U,]5 Xv¾O^8Ð4< 'a1w¨Ë> ([4>8nCMOS Xv¾O^8Ð4< ¨ ¿k=Ly5 U,]5 Xv¾O^8Ð4](https://reader030.fdocuments.in/reader030/viewer/2022013023/5faa729fabc0545fba225fc7/html5/thumbnails/1.jpg)
EMI
CMOS
ECU EV
2
4
BA82904YF-C
BA82904YFVM-C
BA82902YF-C
BA82902YFV-C
3 36
3 36
0.5
0.7
0.2
0.2
0.5
0.5
2.0
2.0
20
20
30
30
100
100
100
100
80
80
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
−40 125
−40 125
SOP8
MSOP8
SOP14
SSOP-B14
ch (V) (mA) (mV) (nA) (mA) (V) (V) (dB)
CMRR(dB)
PSRR(dB) (V/μs) (MHz) ( )
ch (V) (mA) (mV) (nA) (mA) (V) (V) (dB)
CMRR(dB)
PSRR(dB) (V/μs) (MHz) ( )
2
4
2
4
BA2904YF-C
BA2904YFV-C
BA2904YFVM-C
BA2902YF-C
BA2902YFV-C
BA2904YF-M
BA2904YFV-M
BA2904YFVM-M
BA2902YF-M
BA2902YFV-M
3 36
3 36
3 36
3 36
0.5
0.7
0.5
0.7
0.2
0.2
0.2
0.2
0.5
0.5
0.5
0.5
2.0
2.0
2.0
2.0
20
20
20
20
30
30
30
30
100
100
100
100
100
100
100
100
80
80
80
80
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
−40 125
−40 125
−40 125
−40 125
SOP8
SSOP-B8
MSOP8
SOP14
SSOP-B14
SOP8
SSOP-B8
MSOP8
SOP14
SSOP-B14
mm
LMR1802G-LB 2.5 5.51 68 500 0.5 0.452.9(1kHz)7.8(10Hz)
SSOP5(2.9×2.8×1.25)
ch(V)
pFnV/√Hz
pA mV( )
−40 125
No.61X7167C-B 12.2018 CN
21615-8585
: +81-75-311-2121 : +81-75-315-0172
A E
±1 ( ±3.5 10 )
EMI
CR
5.00
100 (MHz)
VO
UT( V
)
1,000
Based on ISO 11452-2
5.20
5.40
5.60
5.80
6.00
C
B
A
E
D
6.20
6.40
CMOS
2.9nV/√Hz 1/6 7.8nV/√Hz
1/5
68°
EMIEMI
CMOS
BA82904YF-CEMI Immunity Op Amp
LMR1802G-LBUltra Low Noise Op Amp
0
5
10
15
20
25
30
35
40
10 100 1,000 10,000
2 10Hz
(nV
/√H
z)
B
BA82904YF-C
A
1kHz1
(Hz)
1/61kHz 2.9nV/√Hz
1/510Hz 7.8nV/√Hz
LMR1802G-LB
1) 2018 10 1
2)
3)
4)
5)
6) AV OA
7) “ ”
8)
9)
10)
11)
12) RoHS RoHS
13) “ ” “ ”
14)
![Page 2: 'a1w¨Ë> EMI c0 . ± c0 . Xv¾O^8Ð4< EMI Immunity …...ßP} ¿P ¨ ¿k=± EMI c0 . Ly5 U,]5 Xv¾O^8Ð4< 'a1w¨Ë> ([4>8nCMOS Xv¾O^8Ð4< ¨ ¿k=Ly5 U,]5 Xv¾O^8Ð4](https://reader030.fdocuments.in/reader030/viewer/2022013023/5faa729fabc0545fba225fc7/html5/thumbnails/2.jpg)
EMI
CMOS
ECU EV
2
4
BA82904YF-C
BA82904YFVM-C
BA82902YF-C
BA82902YFV-C
3 36
3 36
0.5
0.7
0.2
0.2
0.5
0.5
2.0
2.0
20
20
30
30
100
100
100
100
80
80
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
−40 125
−40 125
SOP8
MSOP8
SOP14
SSOP-B14
ch (V) (mA) (mV) (nA) (mA) (V) (V) (dB)
CMRR(dB)
PSRR(dB) (V/μs) (MHz) ( )
ch (V) (mA) (mV) (nA) (mA) (V) (V) (dB)
CMRR(dB)
PSRR(dB) (V/μs) (MHz) ( )
2
4
2
4
BA2904YF-C
BA2904YFV-C
BA2904YFVM-C
BA2902YF-C
BA2902YFV-C
BA2904YF-M
BA2904YFV-M
BA2904YFVM-M
BA2902YF-M
BA2902YFV-M
3 36
3 36
3 36
3 36
0.5
0.7
0.5
0.7
0.2
0.2
0.2
0.2
0.5
0.5
0.5
0.5
2.0
2.0
2.0
2.0
20
20
20
20
30
30
30
30
100
100
100
100
100
100
100
100
80
80
80
80
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
−40 125
−40 125
−40 125
−40 125
SOP8
SSOP-B8
MSOP8
SOP14
SSOP-B14
SOP8
SSOP-B8
MSOP8
SOP14
SSOP-B14
mm
LMR1802G-LB 2.5 5.51 68 500 0.5 0.452.9(1kHz)7.8(10Hz)
SSOP5(2.9×2.8×1.25)
ch(V)
pFnV/√Hz
pA mV( )
−40 125
No.61X7167C-B 12.2018 CN
21615-8585
: +81-75-311-2121 : +81-75-315-0172
A E
±1 ( ±3.5 10 )
EMI
CR
5.00
100 (MHz)
VO
UT( V
)
1,000
Based on ISO 11452-2
5.20
5.40
5.60
5.80
6.00
C
B
A
E
D
6.20
6.40
CMOS
2.9nV/√Hz 1/6 7.8nV/√Hz
1/5
68°
EMIEMI
CMOS
BA82904YF-CEMI Immunity Op Amp
LMR1802G-LBUltra Low Noise Op Amp
0
5
10
15
20
25
30
35
40
10 100 1,000 10,000
2 10Hz
(nV
/√H
z)
B
BA82904YF-C
A
1kHz1
(Hz)
1/61kHz 2.9nV/√Hz
1/510Hz 7.8nV/√Hz
LMR1802G-LB
1) 2018 10 1
2)
3)
4)
5)
6) AV OA
7) “ ”
8)
9)
10)
11)
12) RoHS RoHS
13) “ ” “ ”
14)
![Page 3: 'a1w¨Ë> EMI c0 . ± c0 . Xv¾O^8Ð4< EMI Immunity …...ßP} ¿P ¨ ¿k=± EMI c0 . Ly5 U,]5 Xv¾O^8Ð4< 'a1w¨Ë> ([4>8nCMOS Xv¾O^8Ð4< ¨ ¿k=Ly5 U,]5 Xv¾O^8Ð4](https://reader030.fdocuments.in/reader030/viewer/2022013023/5faa729fabc0545fba225fc7/html5/thumbnails/3.jpg)
EM
I Imm
unity Op
Am
pU
ltra Low
No
ise Op
Am
p
(EMI)
EMI
CMOS
EMI
IC ( )
0.5pA (
1/2)
450μV(
1/4)
68°
500pF
EMI CR
NG
EMI
AEC-Q100
RF-IA(Radio Frequency Impedance Adjuster)
EMC
LMR1802G-LBA B
( )
0
−1.0−1.0 −0.5 0 0.5 1.0 −1.0 −0.5 0 0.5 1.0
−0.5
0
0.5
1.0
−1.0
−0.5
0
0.5
1.0
10
20
30
40LMR1802G-LB
1.1mA
2.9nV/√Hz5nV/√Hz
6mA
2.5V 5.5V
68
2.9nV/√Hz
500pF
40
19nV/√Hz
100pF
24
5.5nV/√Hz
100pF
60
7.5nV/√Hz
250pF
4V 32V
5V00.1
Bipoler JFET LMR1802G-LB LMR1802G-LB
1
10
100
1,000
10,000
100,000
1,000,000
500
1,000
1,500
2,000
2,500
3,000
LMR1802G-LB
450μV 5.5mW
2,000μV(2.0mV)30mW
RF-IA
EMI
CMOS
AD
“ ”
AC
etc.
(RF-IA)
( )
IC
CR
EMI
FAB FAB
FAB
( )
50 / 50 /
5
200pF 1,000pF
NG
pAV V
(ms) (ms)
(μV
)
200,000pA
6pA0.5pA
mW
LMR1802G-LB
CMOS CMOS1/4
EM
I Im
RF-IA
RF-
IA
RF-
IA
VCC
VEE
OUT
IN
IN dx dx dx dxOTHERS
CH1 CH4
CH3CH2
VCC VEE
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
OUT1
IN1
IN1
IN2
IN2
OUT2
IN3
IN3
OUT3
OUT4
IN4
IN4
VCC
OUT1
IN1
IN1
IN2
IN2
OUT2
VEE
IN3
IN3
OUT3
OUT4
IN4
IN4
CH1 CH4
CH3CH2
ADAS(
)
IoT
EMI
![Page 4: 'a1w¨Ë> EMI c0 . ± c0 . Xv¾O^8Ð4< EMI Immunity …...ßP} ¿P ¨ ¿k=± EMI c0 . Ly5 U,]5 Xv¾O^8Ð4< 'a1w¨Ë> ([4>8nCMOS Xv¾O^8Ð4< ¨ ¿k=Ly5 U,]5 Xv¾O^8Ð4](https://reader030.fdocuments.in/reader030/viewer/2022013023/5faa729fabc0545fba225fc7/html5/thumbnails/4.jpg)
EM
I Imm
unity Op
Am
pU
ltra Low
No
ise Op
Am
p
(EMI)
EMI
CMOS
EMI
IC ( )
0.5pA (
1/2)
450μV(
1/4)
68°
500pF
EMI CR
NG
EMI
AEC-Q100
RF-IA(Radio Frequency Impedance Adjuster)
EMC
LMR1802G-LBA B
( )
0
−1.0−1.0 −0.5 0 0.5 1.0 −1.0 −0.5 0 0.5 1.0
−0.5
0
0.5
1.0
−1.0
−0.5
0
0.5
1.0
10
20
30
40LMR1802G-LB
1.1mA
2.9nV/√Hz5nV/√Hz
6mA
2.5V 5.5V
68
2.9nV/√Hz
500pF
40
19nV/√Hz
100pF
24
5.5nV/√Hz
100pF
60
7.5nV/√Hz
250pF
4V 32V
5V00.1
Bipoler JFET LMR1802G-LB LMR1802G-LB
1
10
100
1,000
10,000
100,000
1,000,000
500
1,000
1,500
2,000
2,500
3,000
LMR1802G-LB
450μV 5.5mW
2,000μV(2.0mV)30mW
RF-IA
EMI
CMOS
AD
“ ”
AC
etc.
(RF-IA)
( )
IC
CR
EMI
FAB FAB
FAB
( )
50 / 50 /
5
200pF 1,000pF
NG
pAV V
(ms) (ms)
(μV
)
200,000pA
6pA0.5pA
mW
LMR1802G-LB
CMOS CMOS1/4E
MI Im
RF-IA
RF-
IA
RF-
IA
VCC
VEE
OUT
IN
IN dx dx dx dxOTHERS
CH1 CH4
CH3CH2
VCC VEE
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
OUT1
IN1
IN1
IN2
IN2
OUT2
IN3
IN3
OUT3
OUT4
IN4
IN4
VCC
OUT1
IN1
IN1
IN2
IN2
OUT2
VEE
IN3
IN3
OUT3
OUT4
IN4
IN4
CH1 CH4
CH3CH2
ADAS(
)
IoT
EMI
![Page 5: 'a1w¨Ë> EMI c0 . ± c0 . Xv¾O^8Ð4< EMI Immunity …...ßP} ¿P ¨ ¿k=± EMI c0 . Ly5 U,]5 Xv¾O^8Ð4< 'a1w¨Ë> ([4>8nCMOS Xv¾O^8Ð4< ¨ ¿k=Ly5 U,]5 Xv¾O^8Ð4](https://reader030.fdocuments.in/reader030/viewer/2022013023/5faa729fabc0545fba225fc7/html5/thumbnails/5.jpg)
EM
I Imm
unity Op
Am
pU
ltra Low
No
ise Op
Am
p
(EMI)
EMI
CMOS
EMI
IC ( )
0.5pA (
1/2)
450μV(
1/4)
68°
500pF
EMI CR
NG
EMI
AEC-Q100
RF-IA(Radio Frequency Impedance Adjuster)
EMC
LMR1802G-LBA B
( )
0
−1.0−1.0 −0.5 0 0.5 1.0 −1.0 −0.5 0 0.5 1.0
−0.5
0
0.5
1.0
−1.0
−0.5
0
0.5
1.0
10
20
30
40LMR1802G-LB
1.1mA
2.9nV/√Hz5nV/√Hz
6mA
2.5V 5.5V
68
2.9nV/√Hz
500pF
40
19nV/√Hz
100pF
24
5.5nV/√Hz
100pF
60
7.5nV/√Hz
250pF
4V 32V
5V00.1
Bipoler JFET LMR1802G-LB LMR1802G-LB
1
10
100
1,000
10,000
100,000
1,000,000
500
1,000
1,500
2,000
2,500
3,000
LMR1802G-LB
450μV 5.5mW
2,000μV(2.0mV)30mW
RF-IA
EMI
CMOS
AD
“ ”
AC
etc.
(RF-IA)
( )
IC
CR
EMI
FAB FAB
FAB
( )
50 / 50 /
5
200pF 1,000pF
NG
pAV V
(ms) (ms)
(μV
)
200,000pA
6pA0.5pA
mW
LMR1802G-LB
CMOS CMOS1/4
EM
I Im
RF-IA
RF-
IA
RF-
IA
VCC
VEE
OUT
IN
IN dx dx dx dxOTHERS
CH1 CH4
CH3CH2
VCC VEE
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
CR Filter
OUT1
IN1
IN1
IN2
IN2
OUT2
IN3
IN3
OUT3
OUT4
IN4
IN4
VCC
OUT1
IN1
IN1
IN2
IN2
OUT2
VEE
IN3
IN3
OUT3
OUT4
IN4
IN4
CH1 CH4
CH3CH2
ADAS(
)
IoT
EMI
![Page 6: 'a1w¨Ë> EMI c0 . ± c0 . Xv¾O^8Ð4< EMI Immunity …...ßP} ¿P ¨ ¿k=± EMI c0 . Ly5 U,]5 Xv¾O^8Ð4< 'a1w¨Ë> ([4>8nCMOS Xv¾O^8Ð4< ¨ ¿k=Ly5 U,]5 Xv¾O^8Ð4](https://reader030.fdocuments.in/reader030/viewer/2022013023/5faa729fabc0545fba225fc7/html5/thumbnails/6.jpg)
EMI
CMOS
ECU EV
2
4
BA82904YF-C
BA82904YFVM-C
BA82902YF-C
BA82902YFV-C
3 36
3 36
0.5
0.7
0.2
0.2
0.5
0.5
2.0
2.0
20
20
30
30
100
100
100
100
80
80
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
−40 125
−40 125
SOP8
MSOP8
SOP14
SSOP-B14
ch (V) (mA) (mV) (nA) (mA) (V) (V) (dB)
CMRR(dB)
PSRR(dB) (V/μs) (MHz) ( )
ch (V) (mA) (mV) (nA) (mA) (V) (V) (dB)
CMRR(dB)
PSRR(dB) (V/μs) (MHz) ( )
2
4
2
4
BA2904YF-C
BA2904YFV-C
BA2904YFVM-C
BA2902YF-C
BA2902YFV-C
BA2904YF-M
BA2904YFV-M
BA2904YFVM-M
BA2902YF-M
BA2902YFV-M
3 36
3 36
3 36
3 36
0.5
0.7
0.5
0.7
0.2
0.2
0.2
0.2
0.5
0.5
0.5
0.5
2.0
2.0
2.0
2.0
20
20
20
20
30
30
30
30
100
100
100
100
100
100
100
100
80
80
80
80
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
VEE VCC−1.5
−40 125
−40 125
−40 125
−40 125
SOP8
SSOP-B8
MSOP8
SOP14
SSOP-B14
SOP8
SSOP-B8
MSOP8
SOP14
SSOP-B14
mm
LMR1802G-LB 2.5 5.51 68 500 0.5 0.452.9(1kHz)7.8(10Hz)
SSOP5(2.9×2.8×1.25)
ch(V)
pFnV/√Hz
pA mV( )
−40 125
No.61X7167C-B 12.2018 PDF
21615-8585
: +81-75-311-2121 : +81-75-315-0172
A E
±1 ( ±3.5 10 )
EMI
CR
5.00
100 (MHz)
VO
UT( V
)
1,000
Based on ISO 11452-2
5.20
5.40
5.60
5.80
6.00
C
B
A
E
D
6.20
6.40
CMOS
2.9nV/√Hz 1/6 7.8nV/√Hz
1/5
68°
EMIEMI
CMOS
BA82904YF-CEMI Immunity Op Amp
LMR1802G-LBUltra Low Noise Op Amp
0
5
10
15
20
25
30
35
40
10 100 1,000 10,000
2 10Hz
(nV
/√H
z)
B
BA82904YF-C
A
1kHz1
(Hz)
1/61kHz 2.9nV/√Hz
1/510Hz 7.8nV/√Hz
LMR1802G-LB
1) 2018 10 1
2)
3)
4)
5)
6) AV OA
7) “ ”
8)
9)
10)
11)
12) RoHS RoHS
13) “ ” “ ”
14)
