A Unique System Concept to Improve the Accuracy of … Parameter Analyzer** Keithley 4200 or Agilent...

A Unique System Concept A Unique System Concept to Improve the Accuracy to Improve the Accuracy

of Waferof Wafer --Level Level FlickerFlicker --Noise CharacterizationNoise Characterization

Andrej Rumiantsev, Stojan Kanev

A Unique System Concept to Improve the Accuracy of Wafer-Level Flicker-Noise Characterization

A. Rumiantsev, S. Kanev, MOS-AK 2008 2

Content

Motivation

Challenges for 1/f Measurements

New Probe System Concept

Verification Results

Conclusion



• Parameter extraction and statistical analysis are based on Accurateon-wafer measurement results:– DC (IV/CV) parameter– RF (S-) parameter– Low frequency noise (1/f)

• SUSS has to provide an invisible1 test environment to reach the best possible measurement Accuracy

1 Below the accuracy of the measurement instruments

SUSS Motivation



Measurement Accuracy means:• more efficient model extraction

• faster turnaround of the device models• less design iterations

• faster time-to-market• better return on investment (ROI)

� SUSS helps you1 to make more money1 With the best possible measurement accuracy

Our motivation is your motivation



Content

Motivation




Conclusion



The ability to accurately characterize noise becomes a

fundamental requirement for design modeling!


• Noise is an unavoidable consequence of semiconductor

technology

• Since devices are becoming smaller and smaller, flicker noise

becomes more important

• Its impact on circuit performance is significantsignificant in today's low-

voltage, high performance, mixed signal, RF, deep submicron

designs




Passive system,Efficient shielding

�Manual prober�Expensive EMI-

shielded room

Accuracy Productivity

Big amount of data

�Automated system

vs.

New technologies do not allow compromises



Content

Motivation




Conclusion




Available 1/f Instrumentation:

• ProPlus solution w. 9812B and

NoisePro software*

• Solution based on SR SR570

(current) pre-amplifier and Agilent

IC-CAP**

*[NoisePro], ** [Blaum 2001]




The benefits of the new concept:

1. Eliminates the need for the expensive EMI-shielded room

2. Improves measurement accuracy

3. Increases productivity



1. Expensive EMI-Shielded Room

Faraday cage for the DUT and all sensitive system components

�� Improved shielding efficiency

FaradayCageNo mechanical

feed-throughs



2. Measurement Accuracy

• Convert automated system into electrically passive manual station:

– Turn off motors during the measurement circle

– Lock the chuck position

• Improved grounding to avoid ground loops

�� Minimized AC noise Picture: [Blaum, 2001]



2. Measurement Accuracy (cont.)

• The use of special ultra low-noise cables• Reduced cable length

�� Optimized cabling

D

BG

S

PreAmpCritical

Signal Paths



3. Productivity

• Automated measurement and parameter extraction– Integration with industry standard measurement

and modeling software

• Measurement at different temperatures– Automated thermal management



EMI Shielding: ProbeShield

1. Pre-Amplifier ”inside” the EMI-shielded environment2. Shortest possible low-noise triaxial cables for the Drain

& Gate connection

SD GB

EMC2 Guard™



• Shortest possible low noise cables for the low-pass filter• RF pad design is recommended

SR570 Pre-Amplifier ProbeShield “inside“ (battery driven): The same EMC2 Guard Option � different cables

EMC2 Guard™

EMI Shielding: ProbeShield



Fully grounded probes are obligationFully grounded probes are obligationGround connecting close to the DUTGround connecting close to the DUT

Ultra low noise triaxial cables (part of EMCUltra low noise triaxial cables (part of EMC 22Guard)Guard)

DrainDrain

GateGate

Cabling : A Close Look



Content

Motivation




Conclusion



EMI-Shielded Effectiveness

• EMI-certified test room

• Rohde & Schwarz EMI analyzer

• Measurements for different conditions:

– Front

– Rear

– Side



EMI-shielded effectiveness � >25dB from 1kHz to 70kHz

Reference measurement Front measurement (1) Side measurement (2) Rear measurement (3)

EMI-Shielded Effectiveness (cont.)



• SUSS PA300PS ProbeShield w. EMC2

Guard option • ProPlus solution• Chamber Noise• pMOS FET• SiGe HBT

Experimental Setup



System Configuration

♦ Noise floor ~10-24 A2/Hz

♦ 1 Hz…102.4 kHz (1MHz*)

SUSS PA300PS ProbeShield®Completely EMI Shielded Design

4x Triaxial or RF Probes

PC withPC withNOISEpro &ProberBenchSoftware

cabl

e co

nnec

tors

SMU’s

Noise Output

GPIB Bus

SD GB

LAN Interface to ProberBench Electronics

Dynamic Signal AnalyzerDynamic Signal Analyzer

Agilent 35670A or Stanford Research SR7809812B Noise Analyzer

Controller Unit

Pre-Amplifier (Amplifier / Filter) Unit

Semiconductor Parameter Analyzer**Semiconductor Parameter Analyzer**

Keithley 4200 or Agilent 4156x

DUT

* If use Agilent Vector Signal Analyzers 89610Aor 89410A

.dll

SUSS NOISEpro driver available



Chamber Noise Verification using NoisePro Test

< -120dB

Chamber Noise Verification



Verification with the DUT

• DUT type: pMOS FET

• Same bias conditions

• Same temperature conditions

• Old probe system configuration:– Preamplifier outside the EMI-shielded environment

• New probe system concept: – Preamplifier inside the ProbeShield EMC2

chamber




Old system concept(PreAmp “outside”)

New system concept(PreAmp “inside”)

10-22

10-25




• DUT type: SiGe HBT

• New probe system concept

• Different bias conditions

• Different temperature conditions



SUSS confidential TC =25°C (ON)

VCE = 1.5V

Bias 1 �� IB = 40nA

Bias 2 �� IB = 500nA

Bias 3 �� IB = 8µA

10-20

Line

Verification with SiGe HBT

Under different biases



1.0e1 1.0e2 1.0e3 1.0e4 1.0e5Frequency (Hz)

1.0e-26

1.0e-25

1.0e-24

1.0e-23

1.0e-22

1.0e-21

1.0e-20

1.0e-19

1.0e-18

1.0e-17

1.0e-16

Sic

(A²/H

z)

1.0e1 1.0e2 1.0e3 1.0e4 1.0e5Frequency (Hz)

1.0e-311.0e-301.0e-291.0e-281.0e-271.0e-261.0e-251.0e-241.0e-231.0e-221.0e-211.0e-201.0e-191.0e-181.0e-17

Sib

(A²/H

z)

Ae/Ac/Ab/T=10/10/10/25

100°C 150°C

VCE = 1.5V Bias 1 �� IB = 10nA

Bias 2 �� IB = 40nA Bias 3 �� IB = 400nA

Bias 4 �� IB = 800nA Bias 5 �� IB = 2µA

Bias 6 �� IB = 20µA

Under different biases and temperatures

Verification with SiGe HBT



Content

Motivation




Conclusion



Conclusion

New Probe System concept was introduced• EMC2 Guard

– Save investment costs

• Increased measurement accuracy– More efficient modeling extraction

• System automation for unattended test– Faster time to data

• Turn-key solution – Seamless integration of the industry standard

measurement and modeling solution (such as ProPlus)



References[1] M. Valenza, A. Hoffmann, D. Sodini, A. Laigle, F. Martinez, and D. Rigaud, "Overview of the impact of

downscaling technology on 1/f noise in p-MOSFETs to 90 nm," IEE Proc. Circuits, Dev. and Systems, vol. 151, no. 2, pp. 102-110, 2004.

[2] "NoisePro 1/f noise characterization and modeling system," Product Brochure, ProPlus Design Solutions, Inc., San Jose, CA, USA., 2007.

[3] G. M. Balim, M. G. Levina, and S. S. Smakhtin, "Nonequilibrium 1/f noise and hardware reliability," in Proc. 1st IEEE Int. Conf. Circuits Systems Communications, 2002, pp. 396-399.

[4] A. P. van der Wel, E. A. M. Klumperink, S. L. J. Gierkink, R. F. Wassenaar, and H. Wallinga, "MOSFET 1/f noise measurement under switched bias conditions," IEEE El. Dev. Lett., vol. 21, no. 1, pp. 43-46, 2000.

[5] A. K. Kirtania, M. B. Das, S. Chandrasekhar, L. M. Lunardi, G. J. Qua, R. A. Hamm, and L.-W. Yang, "Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistors," IEEE Trans. El. Dev., vol. 43, no. 5, pp. 784-792, 1996.

[6] A. Blaum, O. Pilloud, G. Scalea, J. A. V. J. Victory, and F. A. S. F. Sischka, "A new robust on-wafer 1/f noise measurement and characterization system," in Proc. Int. Conf. Microelectronic Test Structures, 2001, pp. 125-130.

[7] "SR560 - DC to 1 MHz voltage preamplifier," Data Sheet, Stanford Research Systems, Inc., Sunnyvale, CA, USA.

[8] "SR570 - DC to 1 MHz current preamplifier," Data Sheet, Stanford Research Systems, Inc., Sunnyvale, CA, USA.

[9] "Model 4200-SCS. Semiconductor Characterization System," Product Brochure, Keithley Instruments, Inc., Cleveland, Ohio,USA, 2005.

[10] "SR780 - 100 kHz 2-channel dynamic signal analyzer," Data Sheet, Stanford Research Systems, Inc., Sunnyvale, CA, USA, 2006.

[11] “EMI/RFI Shielding Effectiveness of SUSS ProbeShield Technology,” Technical Brief, SUSS MicroTecTest Systems GmbH, Sacka near Dresden, Germany, 2006.

A Unique System Concept to Improve the Accuracy of … Parameter Analyzer** Keithley 4200 or Agilent...

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