A Single Chip Terabit Switch

22
1 A Single Chip Terabit Switch Speaker: Fred Heaton Authors: Bill Dally,Wayne Dettloff, John Eyles, Trey Greer, John Poulton, Teva Stone, Steve Tell

Transcript of A Single Chip Terabit Switch

Page 1: A Single Chip Terabit Switch

1

A Single Chip Terabit Switch

Speaker: Fred Heaton

Authors: Bill Dally,Wayne Dettloff, John Eyles,Trey Greer, John Poulton, Teva Stone, Steve Tell

Page 2: A Single Chip Terabit Switch

2

Architecture Overview

140 998 Mbps - 3.125Gb/s

Transmitters

140 998 Mb/s - 3.125Gb/s

Receivers

140 x 1403.125Gb/s

Switch

Core

8 bit uP interface

• Re-usable, Low Power Tx/Rx Module

• Rx Clock/Data recovery

• Adaptive termination

• Lane-by-lane selectable data rates

3 selectable Reference clock inputs

5 selectable multiplier settings

•Asynchronous switch operation

•User selectable Transmitter Pre-emphasis

•Scalable architecture

Page 3: A Single Chip Terabit Switch

3

Applications3/5 Stage Clos Network configurations

9800 port SNB 3 stage Clos network (30+ Tbps)Protection switchingVideo routingDWDM OEO switching applications

WAN SONET Ring WAN SONET Ring

OEO switch

will be

replaced

by

Page 4: A Single Chip Terabit Switch

4

Receiver

140 x 1403.125Gb/s

Switch

Core

RxRX0 ±±±±

Clock Gen

RxDat

Host Interface,

Controller, and

Global logic

8 bit uP Interface

MDIO/MDC

RFCC ±

RFCB ±

RFCA ±

receiver assembly N

receiver assembly 2

receiver assembly 1

receiver assembly 0

RxToggle

8

CDR

To Switch

Page 5: A Single Chip Terabit Switch

5

Switch

140 x 1403.125Gb/s

Switch

Core

Crosspoint switch fabric

140 x 140 x 9

•Full reconfiguration and multicast support

•Asynchronous operation

•Differential data path design

•Byte wide datapath + 1 “clock”

From Rx

To Tx

Page 6: A Single Chip Terabit Switch

6

Transmitter

140 x 1403.125Gb/s

Switch

Core

Tx

TX0 ±

Clo

ck

Gen

.

TxD

at

TxT

oggle

Switch

control

Host Interface

Controller, and

Global logic

RFCC ±

RFCB ±

RFCA ±

host

control buses

switch

select

tra

nsm

itte

r a

ssem

bly

N

tran

smit

ter

ass

emb

ly 2

tran

smit

ter

ass

emb

ly 1

8

From

Switch

CDR

8 bit uP Interface

MDIO/MDC

• Differential, CML signaling

• Transmitter Pre-emphasis

• On-chip adaptive termination

Page 7: A Single Chip Terabit Switch

7

Technology

0.18 micron, 7 Layer MetalFlip-chip die attachCeramic BGA package1mm ball pitch

36 x 36 full array (1296 pins)

168 Vdd pins (1.8 volt nominal)

13 Ivdd pins (2.5/3.3 volt nominal)

473 Ground pins

Page 8: A Single Chip Terabit Switch

8

Electrical/Performance Specs

Rx Input Sensitivity - 35 mVJitter Tolerance - 0.65 UIJitter Generation - 0.25 UIPlesiochronous tracking of 200ppm differencebetween reference and embedded data clockSwitch Reconfiguration time ~30uSClock Lock time ~9uSSelectable output levels (675 mV max)Power Dissipation18 Watts @ 2.5 Gbps (1.8 V operation)

22 Watts @ 3.125 Gbps (1.8V operation), 130mW/Tx-Rx pair

Page 9: A Single Chip Terabit Switch

9

Receiver

...D

ESD

Programmable

Termination

E

D

E

eclkP

dclkN

eclkN

dclkP

Data/EdgeSamplers

Early/Late

Logic

early

late LPF

720° Phase

Interpolator

dclkP,dclkN

eclkP,eclkN

Clock

Multiplier

RFC

A,B,C

Multiplier

settings

8/10

210-1 PRBS

Checker

to switch

RX+,RX-RXDAT[9:0]

RXTOGGLE

E0

D0

E1

D1

Quadrature clocks

Page 10: A Single Chip Terabit Switch

10

Early Late Logic

D0

E0D1

E1 DDLogic threshold

!=

late

= != =

late

dclkP

dclkN

eclkP

eclkN

!=

early

!= != !=

early- Data sample

Logic threshold

1

011 00

000 1

Page 11: A Single Chip Terabit Switch

11

Switch Design

Weak

driver

Strong

driver

resistor

row

Diff. ampE

dg

e

Detecto

r

Ed

ge

Detecto

r

Column driver

Colu

mn

Diff. amp

Out+/-

•Asynchronous, low-swing differential design

•Pre-emphasis technique used to drive heavily

loaded row/column lines

•Weak driver and “resistors” used to maintain

differential voltage at DC

• 3 Watts worst case power dissipation at 3.125

Gbps, 2 volt operation

NFET H bridge driver

Edge

Detector

In+

In-

Row driver

Edge

Detector

Page 12: A Single Chip Terabit Switch

12

Nominal Spice simulation, 2.5 Gbps operation

Row near end

Row far end

In

Col near end

Out

Xpt amp

3.2ns

260mV

780mV

Page 13: A Single Chip Terabit Switch

13

Transmitter

...D

ESD

Programmable

Termination

D

dclkP

dclkP

Tx CDR

720° Phase

Interpolator

dclkP,dclkN

eclkP,eclkN

Clock

Multiplier

RFC

A,B,C Multiplier

settings

8/10

210-1 PRBS

Generator

from switch TX+,TX-

TXDAT

TXTOGGLE

Driver

Quadrature clocks

Page 14: A Single Chip Terabit Switch

14

Transmitter Current Steering Element

G

0

G

G

d0

dclk

Vbn

Vbn

dclk[0]

en0N

TX+TX-

s1

s0

• 4 identical sets of current steering elements

•Separate staggered clocks provided to each for slew rate control

•Programmable bias generator (5 settings)

•Equalization tap (5 settings)

Vbn

Vbn

Vbn

Di-bit data

1

0

1

0

1

0

1

d1

d0

d0

d0

d1

d1

d1

dclk

dclk

dclk

GG

GG

dclkdclk

d1

d0

en1N

en2N

en3N

EQ

Bias

Gen.

Page 15: A Single Chip Terabit Switch

15

Interconnect Performance @ Gigabit rates

Skin effect attentuation - freq relationshipDielectric loss - to first order, linear attenuation with frequencySerial transmitters use pre-emphasis to compensate for signaldistortion effects of FR4

1.0 2.0 3.0

Frequency (GHz)

Am

pli

tud

e (d

B)

0.0

-9.0

-6.0

-3.0

FR4 dielectric loss

Skin effect loss

(trace geometry)Total trace loss

Page 16: A Single Chip Terabit Switch

16

Example Waveform (No Pre-emphasis)

0.20.0

Time (ns)

Am

pli

tud

e (V

)

0.75

0.0

0.25

0.50

0.4 0.6 0.8 1.0 1.2 1.4

Transmitted pulse

Received pulse

Page 17: A Single Chip Terabit Switch

17

Example Waveform (Pre-emphasis)

0.20.0

Am

pli

tud

e (V

)

0.75

0.0

0.25

0.50

0.4 0.6 0.8 1.0 1.2 1.4

-0.25

Pre-Emphasis transmitted pulse

Pre-Emphasis pulse response

Response w/ out pre-emphasis

a

b

1.00

� Pre-Emphasis 1-tap equation:

Vpr(n) = a * Vi(n) – b * Vi(n-1)

Narrows pulse which opens the transmit eye at the

receiver

Page 18: A Single Chip Terabit Switch

18

At Transmitter: No Pre-Emphasis Signal at Receiver

At Transmitter: Pre-Emphasis Enabled Signal at Receiver

Pre-Emphasis at 2.5Gb/s, PRBS data:

40” FR4RXTX

Page 19: A Single Chip Terabit Switch

19

On-chip Processor

8 bit Microprocessor4K x 14 bit instruction ROM

4K x 14 bit instruction RAM

512 x 8 bit data RAM

External EEPROM interface

On reset processor performsOn-chip register initialization

Default switch configuration

Receiver offset trim

Termination resistor calibration

Ongoing polling loopRegister updates, termination resistor updates

Page 20: A Single Chip Terabit Switch

20

210-1 PRBS, 3.577 Gbps, 4” FR4

650mV

Duty cycle distortion present due to internal clock load imbalance

Eye reduction in both the time domain and amplitude

Page 21: A Single Chip Terabit Switch

21

Terabit Switch Building Blocks

Crosspoint switch demonstratestwo key building blocksHigh-speed I/Os

High-performance switch core

Different switches can berealized by adding application-specific logic between theseGrooming switchFramers and time-slot interchangers

Cell switchScheduler and queueing

140 x 140

3.125Gb/s

Switch

Core

Application-Specific

Logic

140 3.125Gb/s

Transmitters

140 3.125Gb/s

Receivers

Page 22: A Single Chip Terabit Switch

22

Other Products

VC2002 SONET/SDH Grooming Switch72 Integrated 2.5Gb/s I/O port pairs

SONET Input and Output Processing

SONET Input and Output Processing

ST-192(c) Support

STS-1 level switching

(3456 x 3456 STS-1 Switch)

multi-stage scalable architecture

VC1001/2/3 Octal SERDESfull-duplex, 1Gbps - 3.125 Gbps, 1.5 - 2.1 WattsQuad version also available