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Materials and Manufacturing ProcessesPublication details, including instructions for authors and subscription information:http://www.tandfonline.com/loi/lmmp20

A review of “Rapid Thermal Processing - Scienceand Technology” Edited by Richard B. Fair To obtaincontact: Academic Press Inc. 1250 Sixth Avenue SanDiego, CA9;101 430 pagesArun R. Srivatsa aa Research Scientist , Jet Process Corporation , 25 Science Park, New Haven, CT, 06511Published online: 25 Apr 2007.

To cite this article: Arun R. Srivatsa (1994) A review of “Rapid Thermal Processing - Science and Technology” Edited byRichard B. Fair To obtain contact: Academic Press Inc. 1250 Sixth Avenue San Diego, CA9;101 430 pages, Materials andManufacturing Processes, 9:3, 565-567, DOI: 10.1080/10426919408934926

To link to this article: http://dx.doi.org/10.1080/10426919408934926

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Book Reviews

Rapid Thermal Processing - Science and TechnologyEdited by Richard B. Fair

Since the early work on doping andannealing using laser beams, the scienceand technology 'of rapid thermalprocessing (RTP~ has made significantadvances. Today rapid thermalprocessing is being studied for many ofthe steps involved in integrated circuitfabrication, such as annealing ofimplantation damage, contact alloying,formation of dielectrics and epitaxialgrowth of silicon and Si-Ge. Withdecreasing device dimensions, the futurefor RTP appears brighter. This book is atimely volume, aimed at presenting "thestate of the. art, in technology andunderstanding of RTP".

The book consists of nine chapterswritten by knowledgeable people in therespective areas. f:.. justification for rapidthermal processing is provided in thefirst chapter followed by chaptersdiscussed RTP of specific classes ofmaterials and issues such as annealing ofimplantation damage. Manufacturingequipment for RTP is an important topicin itself, and is discussed in the lastchapter.

The first chapter provides aninteresting summary of issues involvedin device processing as feature sizes tendto diminish. The significant advantagesand disadvantages of conventionalfurnace processing vis-a-vis rapidthermal processing are compared andcontrasted. Readers will find thediscussion of the parameter budgets(contamination budget, thermal budget

etc) and their impact on the cost factorvery useful. Based on cost andmanufacturing r e q u i r e m e n tconsiderations, a strong case is built upfor significant use of RTP technology infuture generations of device fabrication.Epitaxial growth of silicon and silicon­germanium forms the 'centerpiece of thesecond chapter on RTP based epitaxy. Adiscussion on special requirements ofRTP reactors for epitaxial growth isprovided. The growth kinetics, materialcharacteristics (misfit dislocationformation for Si-Ge on Si) and electricalcharacteristics of epitaxial layers aredetailed. It is significant that the qualityof RTP grown epitaxial layers arecomparable to those grown by MBE.

The third chapter covers rapidthermal growth and processing ofdielectrics, focussing mainly on rapidthermal oxidation. An important pointmade throughout the book, which isparticularly relevant for formation ofthin oxides using RTP is the issue ofwafer temperature reproducibility.

This is one of the most challengingproblems confronting large scaleacceptability of RTP. Modeling ofgrowth kinetics and issues relating toRTP of oxides and nitrides and electricalproperties of dielectric layers aresurveyed in this chapter. It is interestingto note that RTP can yield dielectricswith properties superior to those ofoxides formed by furnace oxidation. Thefourth chapter (If the book is on thin

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Book Reviews

film deposition and does overlap withmany of the other chapters. It is pointedout that different chemistries will haveto be adopted in those cases where thereaction rate is mass-transport limitedwith deposition rates unacceptable forsingle-wafer processing (RTP).Discussions of RTP chemistries aimed atlowering substrate temperatures are alsoprovided. Deposition processes formaterials like silicon dioxide, siliconnitride, polysilicon, poly Si-Ge andtitanium silicide are discussed.

The next chapter is on extendeddefects from ion, implantation andannealing. A useful review of ionimplantation damage and defectformation is provided. Different types ofdefects, such as, end-of-range defectsand threading defects are discussed indetail. Defect annealing kinetics arediscussed in detail. The time-temperatureregime of rapid thermal annealing makesit the best method for removal ofdefects, while minimizing dopantredistribution.

Shallow junctions are required forULSI technology. The issue of junctionformation in silicon by rapid thermalannealing forms the subject of the sixthchapter. A detailed discussion of rapidthermal annealing of ion-implantedjunctions is provided. Depending on theimplantation parameters, different typesof damages are produced. The types ofimplantation damage and the effect onannealing in these cases are discussed indetail. An important practical issue inannealing of implanted damage is dopantactivation. A basic theoretical frameworkof dopant activation is provided followed

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by discussion of dopant activation forthe specific cases of B, P and Asdopants.

Silicides are surveyed in the seventhchapter. Metal silicides have manydesirable properties and play animportant role in integrated circuitfabrication. Rapid thermal processing ofsilicides is discussed in detail followinga general discussion on the usefulness ofsilicides in Ie technology. Severaldifferent methods have been adopted forsilicide formation. These includecodeposition of metal and silicon,thermal reaction of metal and silicon,ion beam-induced mixing, buried ionimplantation and chemical vapordeposition. The different methods ofsilicide formation are detailed. Based onthe kinetics of metal-silicon reactionsand dopant redistribution, a case is madefor rapid thermal annealing. Theproperties of silicides and silicidedjunctions (conductivity, stability, dopantredistribution, junction leakage anddamage removal) are reviewed. Adetailed discussion on the application ofsilicides formed by RTA for gates andshallow junctions and the process/deviceconsiderations for such applications isprovided. Interestingly, silicide formationby rapid thermal annealing of metal withexposed silicon, is the preferred methodof formation for applications that requiresilicides self-aligned to diffusion regions.

Issues in manufacturing uniquesilicon devices using RTA are discussedin the next chapter. A theoreticaltreatment of the nonuniformity intemperature distribution on annealing ofpatterned wafers is provided. The issue

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of thermal stress in RTA of silicon isdiscussed in detail. Processing issues forbipolar junction transistor formationusing double polysilicon self-alignedstructures and single polysilicon self­aligned structures are, detailed. Issues inMas transistor processing forconventional MaS structures, transistorswith elevated electrodes and MaSdevices with ultrathin RTP gatedielectrics are discussed in detail.

The last chapter of the book isdevoted to manufacturing equipmentissues in RTA. It is clearly pointed outthat the major obstacles for completeacceptance of RTA are temperaturereproducibility and uniformity duringprocessing. Issues related to theseobstacles, such as, temperaturemeasurement based on emissivity andlight pipe and cavity concepts foruniform radiation or reradiation aresurveyed. Various components of RTAequipment such as lamp sources,reflector designs, chamber designs,temperature sensing, calibration andcontrol featuresare discussed in detail. Commerciallyavailable rapid thermal processingequipment are surveyed. Theoreticalmodeling and testing of system designs,

Book Reviews

and options for real time process controlare reviewed. A technology roadmap forRTP is provided in tabular form.

With decreasing device dimensionsand increasing wafer size, economicalfactors appear to be in favor oftechnology directed towards single waferprocessing. This bodes well for thefuture of Rapid Thermal Processing.However, key obstacles related totemperature reproducibility anduniformity have to be overcome beforethe widespread acceptance of thistechnique. This book offers an excellentreview of issues related to the scienceand technology of RTP. It will serve asa useful reference for researchers andengineers in the field of devicefabrication.

To obtaincontact:Academic Press Inc.1250 Sixth AvenueSan Diego, CA 9:!101430 pages

Reviewed by:Arun R. SrivatsaResearch SclentistJet Process Corporation25 Science Park, New Haven, CT 06511

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