ISSN - 2250 - 1991Volume : 1 Issue : 5 May 2012` 200

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INDEXSr. No. Title Author Subject Page No.

1 Convergence of India Gaap with International GAAP / IFRS

Prof. Kalola Rimaben A. Accountancy 1-3

2 Global Scenario of Business Ethics With Corporate Governance

Prof. Dr.Kishor V. Bhesaniya

Accountancy 4-6

3 VAT & ACCOUNTING Miss. Mira J. Bhanderi Accountancy 7-8

4 Carbon Trading: An Emerging Business Dr. Basanta Khamrui, Dilip Kumar Karak

Commerce 9-11

5 Developments in Indian Non Life Insurance Industry Ms.Kiran Sood, Ms.Supriya Tandon

Commerce 12-14

6 Parameters And Costs Influencing Transportation Decisions In Small Manufacturing Firms

Vipul Chalotra,Prof Neetu Andotra

Commerce 15-17

7 Foreign Trade Policy of India (2009-14) Dr. M. K. MARU Commerce 18-20

8 “A Comparative Analysis on Profitability of Selected Petroleum Industries”

Dr. Ramesh A. Dangar Commerce 21-23

9 An Empirical study on Consumer Awareness on Internet Banking in Gujarat

Dr. Vinod K. Ramani Commerce 24-26

10 Study of Factors Affecting HNIs’ Preferences for their Banks in South Mumbai Area

Shri. Arvind A. Dhond Commerce 27-31

11 Promotion mix straregy of jammu and kashmir co-operatives supply and marketing federation limited in jammu district of J&K state

Tarsem Lal Commerce 32-35

12 Intelligent Brain Tumor Tissue Segmentation from Magnetic Resonance Image using forward and backward anisotropic diffusion

S.Nithya Roopa,P. Vasanthi Kumari

Computer Science

36-38

13 Share of Women in Total Family Income – A Two Group Discriminant Analysis

Dr.A.Shyamala Economics 39-41

14 Socio-Economic Evaluation of Shg’s in Bidar District of Karnataka

Dr.Sangappa V. Mamanshetty

Economics 42-44

15 The Development of Chemical and Petrochemicals Industry in Gujarat

Dr.D.G.Ganvit Economics 45-46

16 How Can Primary Teachers Help To Assist The Development Of Positive Self-Esteem In Students Through Their Ordinary Teaching Practice?

Jigar L. Dave Education 47-48

17 Primary Mission Of Colleges Jigar L. Dave Education 49

18 Effectiveness of Readers Theatre on English Reading Comprehension

Ramesh B. Sakhiya Education 50-51

19 The Role of a Computerized Package on EFL Students' Writing Skills

Abdallah Ahmad, Baniabdelrahman, Abdulaziz A. Abanomey

Education 52-57

20 The Use of Team Teaching and its Effect on Saudi EFL Students' English Proficiency

Abdallah Ahmad, Baniabdelrahman, Abdulaziz A. Abanomey

Education 58-63

21 Study and Development of Road Traffic Noise Model Bhavna K. SutharV. R. Gor, A. K. Patel

Engineering 64-66

22 Weather Forecast Using Artificial Neural Network Laxmikant Raskar, Rohit Waghchaure, Md. Danish Raza,Mayuresh Lande

Engineering 67-68

23 Pavement Subgrade Stabilisation with Rice Husk Ash Patil N. L.,Dr. Sanjay Sharma,Dr. Hemant Sood

Engineering 69-71

24 Study of Precipitation and Stream Flow Data- A Case Study of Kim Basin

Prashant A. Ramani Engineering 72-76

25 “Estimation of Revised Capacity for Deo Reservoir of Gujarat, India”

Hiral Shah,N. N. Borad, R. K. Jain

Engineering 77-79

26 Nanotechnology in Cellular Lightweight Concrete Mr. Nakul Shah, Prof. Jayeshkumar Pitroda

Engineering 80-82

27 Plate Load (Model) Test for Bearing Capacity of Layered Deposite

Patel Ankit D., B.R. Dalwadi

Engineering 83-85

28 Effect of Service Bridge on natural frequency of structurally coupled multistory building

Upadhyay Nishith H., Prof. A.N. Desai

Engineering 86-88

29 “Controling the Soil & Land Pollution in Sabarkantha District by Using an App Lication of Remote Sensing and Geographical Information System”

Gaurang J Patel,R.B Khasiya

Engineering 89-91

30 Control The Soil Erosion & Land Pollution By Flood Reduction in The Tapi River,Surat District, Gujarat, India.

Harshad M.Rajgor,K B Khasiya

Engineering 92-95

31 Methodology for managing irrigation canal system with optimum irrigation scheduling for Meshwo irrigation Scheme

Jitendrasinh D. Raol, Roshani A.Patel,Prof S.A.Trivedi

Engineering 96-98

32 Analyis of regional water supply scheme in rural areas (Case Study: Kutch)

Niketa Patel Engineering 99-103

33 Security For Near Field Communication in Cell Phone Biren M Patel, Vijay B Ghadhvi,Mr Ashish Kumar

Engineering 104-106

34 Heterogeneous Traffic Flow Simulation at Urban Roundabout using ‘VISSIM’

Dipti S. Thanki, Asst. Prof. Ashutosh K. Patel

Engineering 107-109

35 Planning of Facilities for Pedestrian Movement in Urban Area: A Case Study of Vadaj Circle, Ahmedabad

Hitesh A. Patel,Pinak. S. Ramanuj

Engineering 110-113

36 Planning for Non-Motorized Transportation Jignesh C.Prajapati, Prof. N.G.Raval

Engineering 114-116

37 Intersection Design for Pedestrians and Cyclist Jignesh C.Prajapati, Prof. N.G.Raval

Engineering 117-120

38 Theoretical Consideration for optimum irrigation scheduling for irrigation Scheme

Jitendrasinh D. Raol, Prof S.A.Trivedi

Engineering 121-124

39 Overall Equipment Effectiveness Measurement and Review of Total Productive Maintenance

Kadiya Pinjal, Navinchandra

Engineering 125-128

40 To Study the Effect Of Stiffness on the Expansion Joint of a Building Subjected to Earthquake Forces

M.D.SHAH, P. G. Patel Engineering 129-132

41 Side Friction and Side Friction Factor (FARIC) In Ahmedabad Road Link

Parmar Dushyant J, Asst. Prof. Ashutosh K. Patel

Engineering 133-134

42 Fiber Reinforced Selfcompacting Concrete Patel Nikunj R,Elizabeth George

Engineering 135-137

43 Modal Analysis of Helical Gear Purusharth J. Patel,D.A. Patel

Engineering 138-140

44 Impact Strength of Ternary Blended Steel fiber Reinforced concrete

Samir M. Gami., D.A.Sinha

Engineering 141-143

45 Identify issues of traffic movement at landside area & remedial measures

Samir P. Mulani,Prof- Naurdin Hajiani

Engineering 144-147

46 Identification of Truck Transportation Issues at a Junction: a case study of Sarkhej Area

Himanshu. B. Shrimali, Prof- Naurdin Hajiani

Engineering 148-152

47 Assessment of Vehicular Carbon Footprint and its Reduction Measures

Chintan Patel,Prof. H.K.Dave

Engineering 153-155

48 Study of Solar Air Heaters with Different Operating Configurations

Ajaypalsinh Gangasinh Barad

Engineering 156-158

49 Traffic Flow Characteristics on Roads of Small Urban Centre

Axay S. Shah,Dr. L.B.Zala

Engineering 159-162

50 Failure in tensile testing on single lap multi-fastener joint with bolted connection

Jagdish N.Prajapati, Dr.Rajula.k.Gujjar, Prof.M.M.Pomal

Engineering 163-167

51 Study Of Infiltration Capacity At Anjar, Kutch Ravi C Ahir, Sagar D Patel

Engineering 168-169

52 Comparison of Temperature-Base Methods For Calculating Reference Evapotranspiration With Standard Penman-Monteith Method

M.R.Popat, S.N.Chavda, B.H.Pandit

Engineering 170-172

53 Electronic customer relationship management: benefits and trend

Tanuja Nair Engineering 173-174

54 VIRTUAL CLASS ROOM USING MOBILE AD-HOC NETWORK

Gaurav Katariya, Yogesh Parkhe, Devendra Patil,Pawan Pawar

Engineering 175-176

55 PARKING EVALUATION: A CASE STUDY OF AMUL DAIRY ROAD ANAND

Jaydipsinh P. Chudasama, Dr. L.B.Zala

Engineering 177-180

56 ENERGY ANALYSIS OF SOLAR AIR HEATER BY USING DIFFERENT TYPES OF ABSORBER PLATES

Vivek B. Patel,Dr. L.B.Zala

Engineering 181-183

57 Effect of Aspect Ratio W/L ,Body Bias ,and supply Voltage (vDD) for NMOS & PMOS transistor.

Rubina Siddiqui, Angeeta Hirwe, Rahul Parulkar

Engineering 184-186

58 Spider diversity of Wan Wild life Sanctuary, Vidharbha , India.

Taktode N.M. Environment 187-188

59 The Initial Human Behavioural Response to Rapid On set Natural Disaster: Earthquake

S.S. Patil, K.L. Karkare, I.B. Ghorade

Environmental Science

189-190

60 Spatio-temporal Distribution of Surface Water for Irrigation in Satara District of Maharashtra: An Analytical Study

Pawar D. H., Jadhav K.R.

Geography 191-193

61 Nagarcha wadh v kushi bhumi upyog badal nanded-vaghan ek abhyas pahani

Prof. Mane Deshmukh R. S., Dr. S. B Rathod

Geography 194-196

62 Socio-Economic and Nutritional Status of Children with Mental Retardation

Dr. S. S. Vijayanchali Home Science 197-199

63 Motivating Employees under Adverse Conditions Dr Alpesh B Joshi Human Resource

200-202

64 “Strategic Human Resource Management” Dr. M. Venkatasubba Reddy, B. Swetha,S. Jaya Krishna

Human Resource Management

203-204

65 Identifying Crosscutting Concerns for Software Requirement Engineering

Velayutham Pavanasam, Chandrasekaran Subramaniam

Information Technology

205-207

66 Gate pass Automation with Image,Barcode reading and Biometrics

Sumant C. Murke,Tejas N. Athavale, Sangram A. Nalawade

Information Technology

208-210

67 Plight of Rape Victims With Special Reference to India Dr. Monica Narang, Richa Sabharwal

Law 211-212

68 Libraries: An Essential Tool for the Advancement of Knowledge Resources & Research in Recent Era

Dr. Umesh Patel Library Science 213-215

69 An Analytic Study of BA/BSc/BCA/BCom Part I General English Syllabus Prescribed by the University of Jammu

Dr. Wajahat Hussain Literature 216-217

70 A Study on Quality of Work Life Dr.N.Thenpandian Management 218-219

71 Best HR Practices Kavita Trivedi Management 220-221

72 A Study on Employee Retention Practices of Automobile Industry in INDIA

Dr.K.Balanaga Gurunathan, Ms. V.Vijayalakshmi

Management 222-224

73 A Study on Innovation for Organizational Excellence in Health Care Industry in a Private Multi-Speciality Organization

Dr. C. Swarnalatha,T.S. Prasanna

Management 225-227

74 “Performance measurement of Top 10 Mutual Funds with the help of Sharpe, Treynor & Jenson Model”

Monal Patel, Dr. Deepak H. Tekwani

Management 228-230

75 Strategic Expansion for Growth A Case Study on Codescape Consultants Pvt Ltd. (Infinite Possibilities)

Akshay Arora,Abhilansh Bhargava, Preeti Sharma

Management 231-232

76 Role Of Education In Innovation For Economic Development - A Case Study

Dr. Ananthapadhmanabha Achar

Management 233-238

77 ROLE OF HR PROFESSIONAL IN DEALING DISCIPLINARY PROCEEDINGS CONSTRUCTIVELY - AN OVERVIEW

C Santhanamani, Dr. N. Panchanatham

Management 239-241

78 Power of Advertising Supriya Tandon Management 242-244

79 Enhancing Employee Engagement: A Need of The Hour Urmila Vikas Patil Management 245-247

80 Role of E-Learning to Enhance Qualities of Physical Education Teachers and Coaches

Gohil Rajendrasinh K. Physical Education

248-250

81 “Eco – Environmental Study on Nutrient Removal Potential of Eichhornia Crassipes from Domestic Wastewater”

D. K. Patel, V. K. Kanungo

Science 251-253

82 Aphasia – a loss of linguistic faculty Dr Alpesh B Joshi Social Sciences 254-256

83 Workaholism – A Modern Day Nuisance Dr Alpesh B Joshi Social Sciences 257-258

84 Vartman me Dalit Varg ki Samasya Dr. H. L. Chavda Sociology 259-260

Volume : 1 | Issue : 5 | May 2012 ISSN - 2250-1991

184 X PARIPEX - INDIAN JOURNAL OF RESEARCH

Research Paper

*, **, *** (Asst.Prof) Electronic Communication dept of IES-IPSA indore, (M.P)

Engineering

Effect of Aspect Ratio W/L ,Body Bias ,and supply Voltage (vDD) for NMOS & PMOS

transistor.

* Rubina Siddiqui ** Angeeta Hirwe *** Rahul Parulkar

Keywords : ID Drain current, NMOS & PMOS, Aspect Ratio, Biasing Voltage and Forward & Reverse body bias.

We present a new approach for the estimation and optimization the effect of biasing voltage (VDD), Body bias , Aspect ratio (W/L) on NMOS and PMOS transistor. The main purpose of this paper is to demonstrate a systematic approach to design high performance high speed switching applications in digital circuit. MOSFET performance on body bias is experimentally evaluated with various channel-doping profiles to provide guidance for channel engineering in a forward body-biasing scheme. Forward body bias improves VTH in NMOS and PMOS transistor. A reverse body bias has the opposite effect and also enhances the band-to-band tunneling current, resulting in leakage current (I¬OFF¬¬) increase. Therefore, a forward body-biasing scheme is preferable in some important aspects. In previous studies, VF and VR were separately applied to the same device and the resultant performance characteristics were compared. This method is incorrect, however, because of the vastly different values of VTH. Various characterization has been performed on 0.18 nm NMOS & PMOS devices for different substrate voltage values VBS and for various Aspect ratio W/L at different biasing voltage in order to determine the difference between experimental results and theory. Both experimental results and simulations outline change in ID drain current with the change in substrate voltage (VBS) at constant aspect ratio and VDD. charge controlled devices which means that their output current is proportional to the charge established in the semiconductor by the control electrode. MOSFET technology for digital and power applications is driven by two of their major advantages over the bipolar junction transistors. One of these benefits is the ease of use of the MOSFET devices in high frequency switching applications. The MOSFET transistors are simpler to drive because their control electrode is isolated from the current conducting silicon, therefore a continuous ON current is not required. Once the MOSFET transistors are turned-on, their drive current is practically zero. MOSFETs have a resistive nature. The voltage drop However, because of limitations of the fabrication process, The effect of the geometry aspect ratio, W/L, on characteristics of the 0.18 nm gate are evaluated with reference to various device characteristics and the circuit properties, However, for a digital circuit configuration, the transient response of the circuit relies on the charge/discharge capability of the transistor. Thus, a device with a large aspect ratio will be more suitable for digital applications. The most popular circuit solutions and their performance are analyzed, including the effect of body Bias, Aspect ratio and Biasing Voltage

ABSTRACT

1. INTRODUCTIONMOSFET is an acronym for Metal Oxide Semiconduc-tor Field Effect Transistor and it is the key component in high frequency, high efficiency switching applications across the electronics industry [4] The bipolar and the MOSFET transistors exploit the same operating prin-ciple. Fundamentally, both type of transistor across the drain source terminals of a MOSFET is a linear func-tion of the current flowing in the semiconductor [4]

As CMOS technology moves toward the deep sub-micron feature sizes, Meanwhile, ICs are becoming denser and larger which further increases their qui-escent currents. On the other hand, for deep submi-cron technology circuits, the voltage has been reduced while the resistance remains relatively constant. For ID testing to continue to be effective in future technolo-gies, techniques to control the defect free quiescent current must be developed. As well as for reducing standby power [2]

Some potential solutions have been suggested. These solutions include among others:

(1) Cooling down device during testing.(2) Partitioning network and performing ID test on indi-vidual segment of design. (3) Using state dependent ID instead of a single cur-rent threshold(4) Architectural changes such as using dual threshold devices. (5) Reverse biasing the substrate during testing and use of alternative technologies;

In this paper, we examine the effect of body biasing on the effectiveness of ID testing in technology. We have used extensive SPICE simulation to character-ize the off current in 0.18 nm technology MOS devices Results on reduction drain current ID and input state dependence are reported and discussed.

2. DRAIN CURRENTThe Drain current in devices NMOS & PMOS consist of vari-ous components that are due to several physical phenom-ena. Of these components, the most relevant are Illustrated Depending on the value of the gate-source voltage (VGS) .some components are more dominant than others. In the off state, VGS = 0 or is slightly negative (positive) for NMOS

Volume : 1 | Issue : 5 | May 2012 ISSN - 2250-1991

PARIPEX - INDIAN JOURNAL OF RESEARCH X 185

(PMOS) transistors. In this region, the most important compo-nents are source current (Is) and Drain current (ID). The latter component is function of the geometry of the device, as well as the voltage across this device, VBS. Device simulations were run on predictive 0.18nm NMOS transistors (aspect ra-tio w/l =1.5,VDD=1.8v)and PMOS transistor (aspect ratio w/l=3,VDD = 1.8v) at room temperature for both positive & neg-ative variation of VBS from (-1.8 to +1.8) Drain current has been measure and graph plotted figure 1 shown for NMOS for +ve & -ve value of VBS Simulation result is shown in Table 1. The graph plotted in figure 2 shown for PMOS for +ve & -ve value of VBS .Simulation result is shown in Table 2 Table 1 & Graph 1 for NMOS positive & negative Value

S.NO VBS VGS ID (Drain current)

1 0.2v 0v 4.05E-052 0.4v 0v 1.14E-053 0.6v 0v 5.49E-074 0.8v 0v 7.72E-095 1v 0v 7.68E-116 1.2v 0v 7.24E-137 1.4v 0v 6.79E-158 1.6v 0v 6.36E-179 1.8v 0v 5.96E-19

NMOS for positive value of VBS NMOS for negative value of VBS

S.NO VBS VGS ID (Drain Current)

1 -0.2v 0v 1.10E-042 -0.4v 0v 1.48E-043 -0.6v 0v 1.86E-044 -0.8v 0v 2.25E-045 - 1v 0v 2.65E-046 - 1.2v 0v 3.05E-047 - 1.4v 0v 3.45E-048 - 1.6v 0v 3.85E-049 - 1.8v 0v 4.25E-04

In fig. 1 the characteristics curve has shown the differ-ent behavior for positive and negative values. Loga-rithmic behave for positive value and linearly decrease for negative value. These behave shows the majority charge carrier electrons inside the NMOS and followed by the Fermi Dirac statistics. During this phenomenon the vacancies created from the valence band to con-duction band and the extra energy to cross the Fermi gap. ID values are starting to decrease from 0.5V and finally found the minimum value at 1.8VBS while lin-early decreases for negative value in NMOS.

Table 2 & Graph 2 for PMOS Positive & Negative value

S.NO VBS VGS ID (Drain current)1 0.2v 1.8v -1.17E-162 0.4v 1.8v -1.22E-143 0.6v 1.8v -1.27E-124 0.8v 1.8v -1.30E-105 1v 1.8v -1.19E-086 1.2v 1.8v -6.56E-077 1.4v 1.8v -8.03E-068 1.6v 1.8v -2.46E-059 1.8v 1.8v -4.72E-05

PMOS for positive value of VBS PMOS for negative value of VBS

S.NO VBS VGS ID (Drain current)

1 -0.2v 1.8v -1.07E-202 -0.4v 1.8v -1.03E-223 -0.6v 1.8v -9.85E-254 -0.8v 1.8v -9.45E-275 - 1v 1.8v -9.06E-296 - 1.2v 1.8v -8.69E-317 - 1.4v 1.8v -8.33E-338 - 1.6v 1.8v -7.97E-359 - 1.8v 1.8v -8.48E-37

In fig.2 the characteristics curve has shown the reverse be-

Volume : 1 | Issue : 5 | May 2012 ISSN - 2250-1991

186 X PARIPEX - INDIAN JOURNAL OF RESEARCH

havior for positive and negative values. These behave shows the minority charge carrier electrons inside the NMOS. Dop-ing concentration effect the ID Drain Current in these char-acteristics curve. These behave shows the majority charge carrier electrons inside the NMOS

3. EFFECT OF BODY BIAS ON LEAKAGE COMPO-NENTSUnderstanding the relative importance of key leakage com-ponents in scaled technologies and how each of these com-ponents is affected by body bias is a necessary prerequisite for developing a body bias based techniques to limit leakage.

3.1. Sub-threshold LeakageSub-threshold current is the weak inversion conduction cur-rent that flows between the source and drain of a MOSFET when the gate voltage is below VTH. Due to low threshold volt-ages, sub threshold leakage dominates the off-state leakage of current MOSFETs. [1]. This effect is referred to as Drain-In-duced Barrier Lowering (DIBL) and is responsible for a reduc-tion in threshold voltage at high drain biases, Sub threshold leakage is also modified by the body effect. Reverse biasing the substrate to source junction of a MOSFET widens the bulk depletion region. This increases the threshold voltage and thereby reduces the sub-threshold leakage..The sub-threshold leakage of a MOS device taking into account weak inversion, DIBL, and the body effect [6]

3.2. Source/Drain Junction Band-to-Band Tunneling LeakageMOS transistors have reverse biased pn junctions from the drain/source to the well. The reverse biased pn junctions give rise to minority carrier diffusion/drift current near the edge of

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

-0.00005

-0.00004

-0.00003

-0.00002

-0.00001

0.00000

-2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0-1.20E-020

-1.00E-020

-8.00E-021

-6.00E-021

-4.00E-021

-2.00E-021

0.00E+000

Fig.2 Characteristics curve for PMOS,(W/L=3,VDD=1.8V)VBS(VOLT)

ID CURRENT +ve values

ID CU

RREN

T(AMP

) ID CURRENT

the depletion region. This pn junction reverse bias leakage is a function of junction area and doping concentration. But if both the n- and p- regions are heavily doped dominates the pn junction leakage [3] , the high electric field across the reverse-biased pn junction causes electrons to tunnel from the valence band of the p-region to the conduction band of the n-region[6] .The exact dependence on Voltage applied depends on the doping profile in the substrate. As stronger halo implants are used and as the halo implants are locat-ed closer to the source/drain region, much forward bias will cause excessive pn junction leakage as the junction becomes more weakly reverse biased. [2]

3.3. Gate LeakageThe reduction of gate oxide thickness coupled with the result-ant high electric field across the oxide results in significant tunneling through the gate oxide in scaled devices. There are three components of gate leakage: IGD is the gate leakage between the gate and the drain, IGS is the gate leakage be-tween the gate and the substrate; and IGS is the gate leakage between the gate and the source. [5]

ACKNOWLEDGMENT We have observed that the charge carrier mobile and immo-bile ions are playing a vital role for the conduction of current in both series of MOS. Leakage effect has been observed; increases VBS potential increases the leakage current in CMOS. For the best higher circuit designing technology with higher switching speed VBS should be maximum and mini-mum for NMOS and PMOS respectively.

REFERENCES

[1] “Cassondra Neau and Kaushik Roy PurdueUniversity Department of Electrical & Computer Engineering 1285 Electrical Engineering Building West Lafayette, IN 47907 USA {crotty, kaushik}@ecn.purdue.edu [2] XIAOMEI LIU*, PRACHI SATHE and SAMIHA MOURAD Electrical Engineering Department, Santa Clara University, 500 El Camino Real, Santa Clara, CA 95053-0583 (Received 15 August 1999; In finalform 11 September 2000) [3] Giacomo Paci‡, Davide Bertozzi†, Luca Benini‡ † ENDIF, University of Ferrara, 44100 Ferrara, Italy. ‡ DEIS, University of Bologna, 40136 Bologna, Italy the deep sub micrometer regime", IEEE Electron Device Letters, 19(4), 131-133. [4] MOSFET Basics July, 2000 AN9010By K.S.Oh By K.S.Oh [5] F. D’Agostino, D. Quercia Short-Channel Effects in MOSFETs December 11th, 2000[6] Carlos Galup-Montoro*, Márcio C. Schneider*, Ana I. A. Cunha**, and Oscar C. Gouveia-Filho****Federal University of Santa Catarina, Florianópolis, SC, Brazil, carlos@eel.ufsc.br** Federal University of Bahia, Salvador, BA, Brazil, aiac@ufba *** Federal University of Paraná, Curitiba, PR, Brazil, ogouveia@eletr.ufpr.br [7] Design And Application Guide for High Speed MOSFET Gate Drive Circuits

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