A new large signal compact model: Quasi-Physical Zone ...
Transcript of A new large signal compact model: Quasi-Physical Zone ...
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab
A new large signal compact model:Quasi-Physical Zone Division model
Dr. Yuehang XuEmail:[email protected]
MOS-AK Beijing compact modeling workshop
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab
Content
I. BackgroundII. QPZD modelIII. ApplicationsIV. Conclusion
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab
Microwave and Millimeter-wave Technology (MMT) Group
Since 20031.Emerging Electronic Devices
2.MMICs3.RF microsystem
GaN HEMTs
Flexible CNT FETs
Flexible GFET
Diamond FETs GaAs/GaN/InPMMIC T/R modules
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab
Microwave and Millimeter-wave Technology (MMT) Group
InP HBT model @300GHzWIN 0.25um GaN HEMTs model
0.4um/0.25/0.15/0.1μm GaN HEMTs model
Diamond FETs
RF G-NEMS Compact model
10GHz
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab
5
Microwave and Millimeter-wave Technology (MMT) Group
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab
I. Background
Device design Circuits design
(Compact model)
Unified model=physics+ accuracy?
Fully physical
Lack of accuracy
Physics-based & Empirical
Very good accuracy
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab
Compact model coalition(CMC)
Angelov model
I. Background
Physical Compact model: ASM-HEMT, MVSG, ….
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab
¾ Anvanced Angelov modelI. Background
2.
¾ p
2. Scalable model:¾ Nonlinear
Rth=f(Nf,Wf,Pdiss.)¾ Ipk0 in the Ids
1. Improved electrothermal model with both Self-Heating and Ambient Temperature Effects
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Harmonic tuned HPA
¾ Anvanced Angelov modelI. Background
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab
Physical compact models: ¾ Advantages :More intuitive in physics; Less fitting parameters;
Naturally scalable;¾ Methods:
z Surface potential model 9UC Berkeley&IIT :S. Khandelwal (ASM-HEMT)9Tsinghua &UESTC: Y. Wang & Y. Xu(2016EUMW, 2017 IMS, IEEE T-MTT,2018)
z Charge based model 9MIT: Antoniadis/Radhakrishna ( MVSG)9CEA-LETI: F. Martin9UESTC: Y.Xu (2018 IMS)
z Zone division model 9North Carolina State University:R. Trew9UESTC:Y. Xu (2017 IMS, IEEE T-MTT, 2017)
I. Background
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab
¾ Improved ASM-HEMT model
I. Background
Self‐heating Effects
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VVVVkVVVVkVV
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trapping Effects
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¾ Improved MVSG model
I. Background
� �0
( )tanh ,
0
,
dsq dsthv thc ds dsq
dsqth dsq
thc ds dsq
V VV V V
VV V
V V V
§ ·�' � d° ¨ ¸¨ ¸ z® © ¹
° !¯
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For the Source/Drain Neutral Zone Z1/Z3,
To further reduce the N. of fitting parametersII. Quasi-Physical Zone Division (QPZD) model
D. Hou, G. L. Bilbro, and R. J. Trew, IEEE Trans.Electron Devices, 2013.
Calculation of ns(Vgs):
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In the Intrinsic FET Zone
4*50um at room temperature without self-heating
¾ For GaN HEMT, there is only three variables: Ec(T), λ,and Imax(T).
¾ Let Imax is self-heating -independent, Ec become Ec’.
II. Quasi-Physical Zone Division (QPZD) model
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab
Self-heating
5 fitting parameters for self-heating
II. Quasi-Physical Zone Division (QPZD) model
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab
Ambient temperature
II. Quasi-Physical Zone Division (QPZD) model
7 fitting parameters for Ambient temperature effects
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II. Quasi-Physical Zone Division (QPZD) model
0.15-μm GaN HEMTs
4 × 50 μm device for f1 = 30 GHz and f2= 30.001 GHz, Vgs = −2 V and Vds = 25 V, deep class AB.
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab
[4] K. S. Yuk, G. R. Branner, and D. J. McQuate, IEEE Trans. Microw. Theory Techn, 2009.[8] I. Angelov et al., in Proc. Eur. Microw. Conf.,2013.[16]S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, IEEE J. Electron Devices Soc., 2017.[18]Q. Wu, Y. Xu, Z. Wang, L. Xia, B. Yan, and R. Xu, IEEE IMS., USA, 2017[22]G. L. Bilbro and R. J. Trew, IEEE Trans. Electron Devices, 2015.[30] Y. Xu et al, IEEE Trans. Microw. Theory Techn,2017.
7
II. Quasi-Physical Zone Division (QPZD) model
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab
III. Applications
(a)2×125μm (b)6×100μm (c)8×125μm
4*125um, Vgs=-3V, Vds=25V
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III. Applications
¾ Yield analysis based on physical parameters
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab
III. Applications
Yield analysis based on physical parameters
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(a) Extracted from measurements (b) Simulated
III. Applications
Yield analysis based on physical parameters
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab
III. Applications
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab
III. Applications
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¾ We have developed an new quasi-physical compactmodel for AlGaN/GaN HEMT, which shows less fittingparameters.
¾ Future works will be focus on Fully compact physicalmodel with no fitting parameters, calling unified model, inthe perspective RF microeletronic systems and meet therequirements of 5G communication systems.
IV. Conclusion
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab
References¾ Advanced Angelov model1. C. Wang, Y. Xu*, et al., "An Electrothermal Model for Empirical Large-Signal Modeling of AlGaN/GaN HEMTs Including
Self-Heating and Ambient Temperature Effects," IEEE Transactions on Microwave Theory & Techniques, vol. 62, pp.2878-2887, 2014.
2. Y. Xu*, C. Wang, et al., "A Scalable Large-Signal Multiharmonic Model of AlGaN/GaN HEMTs and Its Application in C-Band High Power Amplifier MMIC” IEEE Transactions on Microwave Theory & Techniques, vol. 65, no.8, pp. 2836-2846, 2017.
3. X. Zhao, Y. Xu*et. al, Temperature-Dependent Access Resistances in Large-Signal Modeling of Millimeter-WaveAlGaN/GaN HEMTs , IEEE Transactions on Microwave Theory & Techniques, vol. 65, no.7, pp. 2836-2846, 2017.
¾ Improved ASM-HEMT model1. Q. Wu, Y. Xu*,, "A surface potential large signal model for AlGaN/GaN HEMTs," in 2016 11th European Microwave
Integrated Circuits Conference (EuMIC), 2016, pp. 349-352.2. Q. Wu, Y. Xu*, et. al, “Implementation of self-heating and trapping effects in surface potential model of AlGaN/GaN
HEMTs,” IEEE International Microwave Symposium (IMS), Honolulu, USA, Jun. 2017.3. Q. Wu, Y. Xu*, et al., A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs, IEEE Transactions on
Microwave Theory & Techniques, 2018
¾ Improved MVSG model1. Yonghao Jia, Y. Xu*,Y.Guo*, Modeling Buffer-Related Charge Trapping Effect by Using Threshold Voltage Shifts in
AlGaN/GaN HEMTs. ,” IEEE International Microwave Symposium (IMS), USA, Jun. 2018.
¾ QPZD model1. Z. Wen, Y. Xu*, et. al, “A new compact model for AlGaN/GaN HEMTs including self-heating effects,” IEEE International
Microwave Symposium (IMS), Honolulu, USA , Jun. 2017.2. Z. Wen, Y. Xu*, et al., A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs, IEEE Transactions on
Microwave Theory & Techniques,2017
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab
Acknowledgement
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微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab