A new innovation for motor driver RC-Driver IGBT · PDF fileof inductive load in motor drive...

A new innovation for motor driver —RC-Driver IGBT

Zhou Wei(周伟)

System application engineer

Infineon Technologies China

[email protected]

Copyright © Infineon Technologies 2008. All rights reserved. For internal use only 21.10.2011

Technology overview

Product Qualifications & Team Structure Specific description

RC-Driver IGBT for motor driver

Product Qualifications & Team Structure Summary


Vertical IGBT Concepts

Punch Through Non Punch Through Trench + Field-Stop

-E

Collector

Emitter Gate

-E

Collector

Emitter Gate

-E

Collector

Emitter Gate

n- basis (epi)

n+ buffer (epi)

p+ emitter (substrate)

n- basis (substrate)

n- basis (substrate)

Advantage

• Implanted Back-Emitter better

adjustable

Performance

• Lower Schwitching Losses

• Higher Switching Robustness

Advantage

• Implanted Back-Emitter

• Implanted Fieldstop enables

thinner base region

Performance

• Lower VCEsat

• Lower Switching Losses

• Robustness like NPT

(ROW: 1988) (IFX: 1990 ROW: 1997) (IFX: 2000)


NEW INNOVATION – Reverse Conducting Technology for Drives

RC-IGBTIGBTDiode

Collector

Emitter Gate

Collector

Emitter Gate

Cathode

Anode

+ =

RC-D: Infineon now offers the free wheeling diode monolithically integrated into the TRENCHSTOP IGBT-die for hard switching applications (Reverse Conducting for Drives)

Same DC current rating of diode and IGBT

This leads to current classes [<15A] being available in new package classes.


Improvement of the integrated diode

The integrated diode had to be improved in order to sustain hard switching conditions typical of inductive load in motor drive applications. This is realized by engineering the carrier profile inside the chip: Reduction of anode efficiency to reduce Qrr, Irr

Lifetime killing process to speed-up depletion of the base from free-carrier Increase of cathode n-emitter efficiency to

increase diode softness. Thanks to these modifications, Qrr

and Irr during

reverse recovery are reduced.


Thanks to groundbreaking innovation - Monolithically Integrated Diode

Key differentiators

4A, 6A, 10A and 15A devices now available in IPAK or DPAK

Major price advantage

Space saving

Lowest Vce(sat) for low conduction losses

D²PAK

DPAK

Additional features

Wide range of turn-off/-on time controllability via gate resistor

Very good EMI behaviour

Smooth switching

5 us Short Circuit capability

Tj(max) = 175°C


Technology overview




Chip shrink and power density increase

Static behavior

Dynamic behavior

Short circuit capability

Smooth switching for low EMI

Power loss simulation in a BLDC Motor

Thermal behavior

Mounting and cooling consideration



Due to the reduced total chip size, packages of reduced footprint can be used for the same current rating of equivalent DuoPAK Products, thus allowing a substantial power density increase;

To keep the Tj below 175°C, additional cooling effort may be needed

Power density increase

Footprint Height Footprint Height

[mm²] [mm] [mm²] [mm]

TO220 157 4.5 IPAK 39 2.3 -75% -49%

D²PAK 106 4.5 DPAK 39 2.3 -63% -49%

RC-Drives Footprint

reduction

Height

reduction

Conventional

technology


Technology overview





Static behavior

Dynamic behavior




Thermal behavior



Output characteristics various 6A devices

Tj=25C

0

5

10

15

20

25

30

35

40

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

Vce [V]

Ic [A

]

IKU06N60R

IKP06N60T

IRGB4045DPBF

STGP10NC60

RC-Drives Technology Optimized for Low Vcesat

IFX Duopak TO220

IFX RC-Drives IPAK

Rated Ic

Competitors data derived from datasheet specifications

TO220

Infineon IGBTs exhibit the lolwest Vce(sat)

Competitor 1

Competitor 2


RC-Drives Technology Optimized for Low Vcesat

Competitors data derived from datasheet specifications

Infineon IGBTs exhibit the lolwest Vce(sat)

Rated Ic


Technology overview





Static behavior

Dynamic behavior




Thermal behavior



Dynamic Behaviour

At lower frequency Vce(sat) is the dominant loss component


Trade-off Vcesat - Eoff

Trade Off IGBT

Vce=400V, Ic=6A, Rg=24Ohm, Tj=25°C

0

50

100

150

200

250

1.2 1.4 1.6 1.8 2 2.2 2.4 2.6

Vce(sat) [V]

Eo

ff [µ

J]

IKU06N60R IKP06N60T

STGP10NC60 IRGB4045D

TO220

TO220

IFX Duopak TO220

IFX RC-Drives IPAK

At lower frequency Vce(sat) is the dominant loss component

Competitor 1 Competitor 2


Technology overview





Static behavior

Dynamic behavior




Thermal behavior




The monolithic integration of the anti-parallel diode does not degrade the short circuit capability in comparison with the TRENCHSTOPTM. The RC-Drives is rated at tsc=5usec at Tj=150°C, Vge=15V, Vcc=400V.


Technology overview





Static behavior

Dynamic behavior




Thermal behavior



Turn-off dU/dt Vce=400V Ic=6A Rg=24Ohm

4

6

8

10

12

14

16

18

20

0 50 100 150 200

T [°C]

dU

ceo

ff/d

t [V

/µs]

IKU06N60R IKP06N60T

Competitor1 Competitor2

RC-Drives

Turn-on dU/dt Vce=400V Ic=6A Rg=24Ohm

-30

-25

-20

-15

-10

-5

0

0 50 100 150 200

T [°C]

dU

ceo

ff/d

t [V

/µs]

IKU06N60R IKP06N60T


RC-Drives

Turn-off dU/dt Vce=400V Ic=6A T=175°C

0

2

4

6

8

10

12

14

0 50 100 150 200

Rg [Ohm]

dU

ceo

ff/d

t [V

/µs]

IKU06N60R IKP06N60T


RC-Drives

Turn-on dU/dt Vce=400V Ic=6A T=175°C

-25

-20

-15

-10

-5

0

0 50 100 150 200

Rg [Ohm]

Uceo

n/d

t [V

/ns]

IKU06N60R IKP06N60T


RC-Drives


Lowest dU/dt at turn-on and turn-off low EMI !!


Technology overview





Static behavior

Dynamic behavior




Thermal behavior



Loss estimation vs switching frequency

BLDC Motor, Vcc=400V, Rg=24 Ohm, Iout=6A. Hard Switching

B6-Inverter Hardswitching

Tj = 25°C

1.5

1.8

2.0

2.3

2.5

2.8

3.0

3.3

3.5

0 2 4 6 8 10 12 14 16 18 20

f [kHz]

Pto

t [W

]

IKU06N60R

IKP06N60T

IRGB4045

STGP10NC60

B6-Inverter Hardswitching

Tj = 175°C

1.5

1.8

2.0

2.3

2.5

2.8

3.0

3.3

3.5

0 2 4 6 8 10 12 14 16 18 20

f [kHz]

Pto

t [W

]IKU06N60R

IKP06N60T

IRGB4045

STGP10NC60

Hard Switching Modulation

IFX Duopak TO220

IFX RCD IPAK

Comp.1

Comp.2

Comp.1

Comp.2

30 60 90 120 150 180 210 240 270 300 330 360

ON

OFF OFFHIN1

LIN1

HIN2

LIN2

HIN3

LIN3


Conduction Losses versus Switching Losses

Conduction losses are the predominant loss meaning low Vce(sat) is the most relevant parameter

Infineon IGBTs offer the lowest Vce(sat) in the low cost consumer market

BLDC Motor, Hard Switching modulation

400V, Ic=6A, DC=0.65, Tj=175C

fsw=16kHz

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

IKU06N60R IRGB4045 STGP10NC60 IKP06N60T

Po

we

r lo

ss

es

(W

)

Diode sw.

Diode cond

IGBT sw

IGBT cond

BLDC Motor, Hard Switching modulation

400V, Ic=6A, DC=0.65, Tj=175C

fsw=4kHz

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

IKU06N60R IRGB4045 STGP10NC60 IKP06N60T

Po

we

r L

os

se

s (

W)

Diode sw.

Diode cond

IGBT sw

IGBT cond

Comp.1 Comp.2 Comp.1 Comp.2


Technology overview





Static behavior

Dynamic behavior




Thermal behavior



Aircon split system: compressor inverter D-pak version

Inverter with 15ADpak IGBTs is powered to drive an 1.5 kW AC motor + brake system

By adjusting DC brake and motor speed different output powers are achieved

The case temperature is monitored for different power levels with an IR camera after 10 min steady state conditions

AC Motor

DC Brake

Power meter

IR camera


A plastic shield is added to avoid any air flow from the rotating shaft of the motor may hit the Heatsink




759 W Output Tc,max= 66.7 °C



1066 W Output Tc,max= 84.5°C




Shield removed

Slight air flow present


Compressor inverter- 15A Dpak

Case temperature Tc vs Output power

60

65

70

75

80

85

90

95

100

105

700 800 900 1000 1100 1200 1300

Output power (W)

Ca

se

te

mp

era

ture

Tc

(°C

)


With slight air flow

Without Air flow

1.2 kW output power possible without forced air cooling !!


Aircon split system: Outdoor fan inverter D-pak version

Inverter with 4A Dpak IGBTs is powered to drive a 200W DC motor

No Heatsink, no forced air

By adjusting motor speed different output powers are achieved

The case temperature is monitored for different power levels with an IR camera after 10 min steady state conditions

Daikin Outdoor

fan

Power meter

IR camera



Very non-uniform temp. distribution

Aircon split system: outdoor fan inverter D-pak

80°C

134.7°C

DC bus cap

The case temperature is strongly affected by the surroundings

„Cool― passive component acting as Heatsink


Aircon split system: effect of thermal convection

134.7°C

124.9°C

-10°C by allowing

vertical airflow on the back of

the board !!

Board flipped 90 °C


6A I-pak in AEG Washing machine

Commercial AEG Washing Machine model Lavamat 76850

Electrolux Board, with TO220 Full-pak as power switches.

Clip mounting onto the Heatsink

TO220 FP from competition



HS and LS TO220FP for one

phase replaced with RCD Ipak.

A Insulation thermo foil

inserted to isolate the drain of

the Ipak from the heatsink

For the Temperature readings

small holes are drilled in the

case of the devices and in the

Aluminum Heatsink, were

thermocouple are inserted (No

FLIR Camera possible due to

clip mounting)



Case Temperature Profile during "20min" cycle

Infineon RCD in I-pak IKU06N60R

20

30

40

50

60

70

80

90

100

0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600

Time (sec)

Te

rmp

(°C

)

RCD_GHS

RCD_QLS

RCD_Heatsink

RCD_Ambient

11:35 min

3.30 min4:15 min

1:36

min

2:30 min

Pump

water-

out

Washing

12 sec rotation

5 sec stop

12 sec reverse direction

Rinsing ? Rinsing

Spinning

Max Junction temperature is approx 90°C

Slighlty different temp. HS vs LS due to positioning on the board (HS being heated from both sides)



Delta Case-Ambient Temperature Profile during "20min" cycle

RC-Drives Ipak vs Competitor in TO220Fullpak.

Delta Tc,LS - Ta

0

10

20

30

40

50

60

70

0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600

Time (sec)

Te

rmp

(°C

)

RC-Drives LS

Competitor2 LS

Pump

water-

out

Washing

12 sec rotation

5 sec stop

12 sec reverse direction

Rinsing

Rinsing

Spinning

Additional 10°C

for the RC-Drives

Additional 15°C

for the RC-Drives

Despite the smaller footprint package, only 15°C higher Tj is observed in comparison with competitors devices in TO220 Fullpak

The High Tj is compensted by the higher Tj,max of the RC-Drives (175°C vs 150°C)


Technology overview





Static behavior

Dynamic behavior




Thermal behavior



PCB manufacturing

Concept can follow several methods

Copper inlays (production limited and quite expensive concept)

Thermal Vias filled with synthetic resin to avoid solder voids at RC-Drives Leadframe due to a flow through the vias

Small drill holes (below 0.2 mm) for the thermal vias that are filled during galvanisiation to avoid solder flow

Infineon recommend the small drill hole concepts since it‘s the most cost effective solution due to easy production and adequate thermal behaviour

Copper Inlays (Ruwel GmbH) Classical Thermal Vias with resin Thin-Via-Concept (Small drill holes)

http://www.google.de/imgres?imgurl=http://i66.photobucket.com/albums/h268/kn4ppst3r/Harewireinternalback.png&imgrefurl=http://forum.turnbridge.com/lofiversion/index.php%3Ft2547.html&usg=__fyALq29t3KrOab2Uexzi5iwpVYo=&h=775&w=783&sz=57&hl=de&start=31&um=1&itbs=1&tbnid=EotIE6ZQXfWgPM:&tbnh=142&tbnw=143&prev=/images%3Fq%3Dthermal%2Bvias%26start%3D20%26um%3D1%26hl%3Dde%26sa%3DN%26rls%3Dcom.microsoft:de-at%26ndsp%3D20%26tbs%3Disch:1


Thermal Concept

Thermal Concept for Sections (1. Compressor-Inverter, 2. PFC and 3. Fan-Inverter)

Optimized for lowest PCB-space usage and cost

PCB Thermal-Vias

Copper

Isolation Foil*1

Heatsink*1

RC-Drives

*1)If PV > 1W


Thermal resistance interface material

A

LR

material ceth_interfa

A…area

L

Geometric and thermal data

A = 100 mm²

L = 200 µm

= 1.1 W/mK

Rth, interface = 1.8 K/W


Thermal conciderations of Thin-Via-Concept

Small drill holes Board-Parameter:

d = 1 mm, r2 = 0.22 mm, r1 = 0.2 mm, lamda = 400W/K

Rth,via = 95 K/W

The distance between the pads can be zero to have an optimized heatspreading

2

1

2

2

,rr

dR viath

(2*r1)

(r2-r1)

d


Thermal resistance

Rthjc ~ (0.6-2) K/W

depending on chip size

Rth_PCB > 50 K/W

Rth_interface ~ 1.8 K/W

Rthj_to heatsink > 52 K/W (without heatsink)

60 thermal Vias Rth_PCB ~ 1.58 K/W

Rth_interface ~ 1.8 K/W

Rthj_to heatsink~ (3.98-5.38) K/W (without heatsink)

package package

Rthjc ~ (0.6-2) K/W

depending on chip size

heatsink heatsink


Thermal Concept

15A RC-D IGBT for 1.5kW

The concept was tested successfully in the demoboard with Tj < 150°C at Pinv = 1.5kW


Surface Mount: Dpak

Commercial Fridge Compressor board

RC-Drives Demoboard

D-pak D2-pak


Thermal VIAS for improved heat dissipation in case a HS is used

Surface Mount

Example of Heatsink mounting


Vertical insertion: I-pak

Insulation foil +

Clips mounting with nuts and bolts.

AEG Washing machine board


Vertical insertion: I-pak

Different clips / heatsink / foil combination for mounting of the IPAK


Technology overview





600V Product Family TRENCHSTOP™ DuoPack™ & RC-D

Continuous

collector current

at T C =100°C

6A IGP06N60T

10A IGP10N60T

15A IGB15N60T IGP15N60T

20A

Sin

gle

IG

BT

30A IGB30N60T IGP30N60T IGW30N60T

TO-247 TO-263

TO-220 TO-220

FULL-PAK

IKW20N60T

IKP04N60T

IKB06N60T IKP06N60T

IKB10N60T IKP10N60T

IKB15N60T IKP15N60T

Du

oP

ac

k ™

IKW30N60T

IKA06N60T

30A

(D²-PAK)

IKA10N60T

IKB20N60T IKP20N60T

IKA15N60T

IKW50N60T

IKW75N60T

50A

75A

IGW50N60T

IGW75N60T

50A IGB50N60T IGP50N60T

TO-251

(I-PAK)

TO-252

(D-PAK) TO-262

IKI04N60T

IGB10N60T

NEW

RC-D

4A

6A

10A

15A

20A

75A

IKU04N60R

IKU06N60R

IKU10N60R

IKU15N60R

IKD04N60R

IKD06N60R

IKD10N60R

IKD15N60R


RC-Drives Product Portfolio

[W] [V] [A] [A] [V] [mJ] [usec] [V]

IKU04N60R I-PAK

IKD04N60R D-PAK

IKU06N60R I-PAK

IKD06N60R D-PAK

IKU10N60R I-PAK

IKD10N60R D-PAK

IKU15N60R I-PAK

IKD15N60R D-PAK

600

1000

1500

Vceon @

175°C

Inverter Output

power

200

1.22 5 5

Ets @

175C

600 30 15 1.9

0.3 5 5

600 20 10 1.9 0.58 5 5

600 12 6 1.9

Ic @

100°C Tsc Vgeth

600 8 4 1.9 0.21 5 5

Part numberPackage

Type

BVces Ic @

25°C

Product Specifications


RC-Drives IGBTs summary

Price and performance optimised for Consumer Market.

Space optimization on PCB

Low Vcesat for improved system efficiency

Smooth switching for reduced EMI

Thermal behavior verified in application conditons

Reference design available

Mounting guidelines available

Application note available


I K D 04 N 60 R

S = Siemens I = Infineon

Device D = Diode K = hardswitching series integrated diode H = softswitching series integrated diode G = single diode

Package type A = TO-220 FullPAK B = TO-263 H = TO-220 “real two leg” D = TO-252 (D-PAK) P = TO-220 I = TO-262 (I²-PAK) U = TO-251 (I-PAK) W = TO-247 Y = TO-247HC

Infineon IGBT Nomenclature

Voltage (V/10) Breakdown voltage

Technology N = N-channel P = P-channel T = Trenchstop™ (only 1200V) E = Emitter controlled Diode S = SiC diode

Current class (A) Nominal current @ 100°C

Specifications Nothing stated = Fast IGBT (~20kHz/IGBT2) HS = Highspeed (600V) (~80kHz/IGBT2) H2 = Highspeed 2 (1200V) (~80kHz/IGBT2) H3 = Highspeed 3 (1200V) (~80kHz/IGBT4) T = TRENCHSTOP™ (~20kHz/IGBT3) T2 = TRENCHSTOP™ 2nd gen. (~20kHz/IGBT4/Emcon4) R = Reverse conducting (~60kHz/IGBT3) R2 = Reverse conducting, 2nd gen. (~60kHz/IGBT3) R3 = Reverse conducting, 3rd gen. (~60kHz/IGBT3)

A new innovation for motor driver RC-Driver IGBT · PDF fileof inductive load in motor drive...

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Transcript of A new innovation for motor driver RC-Driver IGBT · PDF fileof inductive load in motor drive...