A 9.35-ENOB, 14.8 fJ/conv.-step Fully- Passive …...A 9.35-ENOB, 14.8 fJ/conv.-step Fully-Passive...
Transcript of A 9.35-ENOB, 14.8 fJ/conv.-step Fully- Passive …...A 9.35-ENOB, 14.8 fJ/conv.-step Fully-Passive...
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Symposia on VLSI Technology and Circuits
Zhijie Chen, Masaya Miyahara, Akira Matsuzawa
Tokyo Institute of Technology
A 9.35-ENOB, 14.8 fJ/conv.-step Fully-
Passive Noise-Shaping SAR ADC
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Outline
• Background and motivation
• Conventional Noise shaping technique
• Proposed fully passive noise shaping SAR ADC
• Experimental results
• Conclusion
Slide 1
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Background and Motivation
Slide 2
Vin
VREFPVCM
VREFN
CC2C4C
CLK
D Q
Clk
Q
SAR logicSample Conversion
Switch and Capacitor
DigitalComparator
• SAR ADC mainly consists of digital circuits
• It can benefit from the technology scaling (like speed)
• Analog components affect the performance
SAR ADC architecture:
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Vin
VREFPVCM
VREFN
CC2C4C
CLK
D Q
Clk
Q
SAR logicSample Conversion
Switch and Capacitor in SAR ADC
Slide 3
Switch and Capacitor
• Higher resolution Larger cap Larger settling time
• Larger cap Larger chip size Slower speed
Capacitor array affects SAR ADC performance
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Vin
VREFPVCM
VREFN
CC2.1C3.9C
CLK
D Q
Clk
Q
SAR logicJitter
VN
VREFP
VREFN
error
Non-ideal effects
Slide 4
• Non-ideal effects further degrade performance
• How to improve the resolution?
noise
jitter
Mismatch
Settling error
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Noise shaping technique
Slide 5
• Sacrifice speed for resolution
• Noise shaping is based on integrator, usually opamp
Move noise out of band of interest
-150
-100
-50
0
104 105 106 107 108
PSD of Sigma-Delta Modulator
Frequency [Hz]P
SD
[d
B] Noise Shaping
Order
Bandwidth
OSR
X
-
Integrator
Y
Quantizer
DAC
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Simulation results of non-ideal effects
Slide 6
• Noise shaping reduces non-ideal effects
Fin = 6.24 MHz
Settling error (LSB)Comparator noise: Vn (σ(LSB))
0.05 0.1 0.15 0.2 0.25
10.5
0.01
SAR NS SAR
EN
OB
(B
its
)
7.5
8
8.5
9
9.5
10
10.5
SAR NS SAR
EN
OB
(B
its
)
7.5
8
8.5
9
9.5
10
0.1 0.5 1 1.5 2
Jitter (ps)DAC mismatch (LSB)
10.5
SAR NS SAR
EN
OB
(B
its
)
7.5
8
8.5
9
9.5
10
10.5
SAR NS SAR
EN
OB
(B
its
)
7.5
8
8.5
9
9.5
10
0.1 0.5 1 1.5 2 10 40 70 100
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Noise shaping effect on capacitance
Slide 7
• Noise shaping SAR ADC
• Traditional SAR ADC
Thermal noise = kT/C
Thermal noise = (1-Z-1) kT/C/OSR
Same SNR, smaller capacitor for noise shaping SAR ADC
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Outline
• Conventional Noise shaping technique
Slide 8
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Conventional noise shaping technique
Slide 9
FIR filter introduces extra noise and extra area;
Opamp : extra power and flicker noise
[1] J. Fredenburg, et al., JSSC 2012
Tech. scaling, difficult to design high performance Opamp
Dout(z)
Dout(z)
VIN(z)
FIR Filter
VIN(z) a1z-1
a2z-1
z-1
kA
Q(z)
FIR Filter IIR Filter
OpampCap Array
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Outline
• Proposed fully passive noise shaping SAR ADC
Slide 10
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Traditional architecture
Slide 11
Traditional 1st-order noise shaping architecture
E
X
-
Z-1
1-Z-1
Y
DAC
OTA based integrator
SAR ADC
E: quantization noise
Y=X+(1-Z-1)E
XSAR,in
Y=(X-Z-1E)+E Y(N)=X(N)+XSAR,in(N-1)-Y(N-1)+E(N)
Previous residue
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Proposed FPNS-SAR ADC architecture
Slide 12
Proposed noise shaping architecture (FPNS-SAR)
Step 1: Get previous residue on top-plate of C-DAC;
Step 2: Feed it back to input.
E
Xin Y
DACZ-1
-E
XSAR,in=Xin - Z-1
E
SAR
: Realized by Charge redistribution
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Residue in SAR ADC
Slide 13
Residue on the top-plate of SAR ADC
Vin
VREFPVCM
VREFN
CC2C4C
CLK
D Q
Clk
Q
SAR logic
CLK
N-1 N
Vtop
After conversion @ N-1, residue Vtop(N-1)=XSAR,in(N-1)-Y(N-1)
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FPNS-SAR ADC implementation
Slide 14
1. Conversion @ N-1
After conversion, Vtop=-E(n-1)/2;
2. Clear Charge@ ΦNS2
Clear Charge of C3, QC3=0;
ФS
Vin
C1 C2
C3
+
-
ФC
ФNS1
ФNS2
ФNS3
ФS
ФC
N-1 N
ФNS1
ФNS2
ФNS3
Vtop
+ ФS
Vin
C1 C2
C3
+
-
ФC
ФNS1
ФNS2
ФNS3
ФS
ФC
N-1 N
ФNS1
ФNS2
ФNS3
Vtop
+
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FPNS-SAR ADC implementation
Slide 15
3. Charge share @ ΦNS3
Get half top voltage, VC3= Vtop (n-1)/2;
4. Sample @ N
Sampling input, Vin(n);
ФS
Vin
C1 C2
C3
+
-
ФC
ФNS1
ФNS2
ФNS3
ФS
ФC
N-1 N
ФNS1
ФNS2
ФNS3
Vtop
+ ФS
Vin
C1 C2
C3
+
-
ФC
ФNS1
ФNS2
ФNS3
ФS
ФC
N-1 N
ФNS1
ФNS2
ФNS3
Vtop
+
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FPNS-SAR ADC implementation
Slide 16
5. Conversion@ N
VDAC(n) = Vin(n)-E(n-1)+E(n)
With the help of C2 and C3:
VDAC(Z) = Vin(Z)+(1-Z-1)E(Z)
Realize 1st-order NS
ФS
ФC
N-1 N
ФNS1
ФNS2
ФNS3
ФS
Vin
C1 C2
C3
+
-
ФC
ФNS1
ФNS2
ФNS3
Vtop
+
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Capacitance comparison
Slide 17
Traditional 10b SAR-ADC
Proposed 10b noise shaping architecture (FPNS-SAR)
ФSC
ФC
+
-
Vin
C 2C
C: 8b C-DAC
Total: 4 X C
Total: 3 X C1
C1<C, hence, proposal saves area
ФSC1
C2
ФC
ФNS1
ФNS3
C3
+
-
ФNS2C1=C2=C3
+
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ФS
Vin
C1
C2
C3
+
-
ФC
ФNS1
ФNS2
ФNS3
Vtop
+
SAR Logic
ФNS2
ФNS3
:NMOS SwitchФS :Bootstrap switch
ФNS1 :CMOS Switch :NMOS Switch
Circuit details
Slide 18
Total Circuit of FPNS-SAR ADC:
Asynchronous logic; 8-bit C-DAC
8-bit
Different switches; four inputs comparator
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Circuit details
Slide 19
Dynamic comparator [4]
[4] H. Wei, et al., JSSC 2012
Dynamic comparator, save power
AVDD
Vinp Vinn
CLK
CLK
cn
cp
cn
cp
Vp
VnVinp,p Vinn,n
SR LATCH:
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Outline
• Experimental results
Slide 20
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Chip photograph
Slide 21
C-DAC
230.1 µm
53.4
µm
CMOS 65 nm
COMP
CLK LOGIC
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Experimental results
Slide 22
• Realized 1st-order Noise Shaping
Power supply: 0.8-V
Power : 120.7-µW
-60 -50 -40 -30 -20 -10 00
102030405060
input signal [dBFS]
SN
DR
[d
B]
104 105 106 107-140
-120
-100
-80
-60
-40
-20
0Power Spectral Density
Frequency [Hz]
PS
D [
dB
]
SNDR = 58.03 dB ENOB = 9.35 bits Fin = 999.5 kHzOSR = 4Fs = 50 MHz
BW = 6.25 MHz
20dB/Oct
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Experimental results-Comparison
Slide 23
[1] J. A. Fredenburg , et al., JSSC 2012
[2] M. V. Elzakker, et al., JSSC 2010
[3] A. Jain, et al., JSSC 2012
JSSC’10 [2]
JSSC’12[3]
JSSC’12 [1]
This work
Architecture SAR CT-SDM NS-SAR FPNS-SAR
OTA No Yes
Technology (nm) 65 130 65 65
Bandwidth (MHz) 0.5 15.6 11 6.25
Core Area (mm2) 0.0259 0.27 0.0323 0.0123
Supply (V) 1 1.3 1.2 0.8
Power (μW) 1.9 4000 806 120.7
ENOB (bits) 8.75 9.6 10 9.35
FoMW
(fJ/conv.) 4.42 160 35.8 14.8
Noise Shaping No Yes Yes Yes Yes No
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Outline
• Conclusion
Slide 24
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Conclusion
• First work that realizes Passive noise shaping SAR, save power;
• Maintain basic architecture and operation of SAR-ADC, inherits advantage of SAR-ADC;
• No Opamp, most are digital circuits, robust to future technology and power supply downscaling;
• Relax the requirement of circuit blocks, save area and save power.
Slide 25
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Acknowledgements
This work was partially supported by HUAWEI, Mentor
Graphics for the use of the Analog Fast SPICE (AFS)
Platform, and VDEC in collaboration with Cadence
Design Systems, Inc.
Slide 26