A 600mV 3.6mW 68dB DR 4th Order Analog Base Band Filter for WLAN Receivers
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1 Microelectronics Group Dep. of Innovation Engineering-University of Lecce A 600mV 3.6mW 68dB DR 4th Order Analog Base Band Filter for WLAN Receivers Marcello De Matteis, Stefano D’Amico, Giuseppe Vergallo, Andrea Baschirotto Engineering Innovation Department of University of Lecce [email protected] , [email protected] , [email protected] , [email protected]
description
A 600mV 3.6mW 68dB DR 4th Order Analog Base Band Filter for WLAN Receivers Marcello De Matteis, Stefano D’Amico, Giuseppe Vergallo, Andrea Baschirotto Engineering Innovation Department of University of Lecce - PowerPoint PPT Presentation
Transcript of A 600mV 3.6mW 68dB DR 4th Order Analog Base Band Filter for WLAN Receivers
1Microelectronics GroupDep. of Innovation Engineering-University of Lecce
A 600mV 3.6mW 68dB DR 4th Order Analog
Base Band Filter for WLAN Receivers
Marcello De Matteis, Stefano D’Amico, Giuseppe Vergallo, Andrea BaschirottoEngineering Innovation Department of University of Lecce
[email protected], [email protected], [email protected], [email protected]
2Microelectronics GroupDep. of Innovation Engineering-University of Lecce
Abstract
4th order base band filter for WLAN receivers
Butterworth Low Pass Filter
Active Gm-RC
VDD=600mV
0.13µm CMOS technology@Vth = 300mV
3Microelectronics GroupDep. of Innovation Engineering-University of Lecce
WLAN Specifications
4th order base band filter for WLAN receivers
Complete DesignLayout
Specifications: order 4th Butterworth
G 0 dB
SNR > 60dB
MHz122 o
4Microelectronics GroupDep. of Innovation Engineering-University of Lecce
Butterworth Low Pass Filter
Two Biquadratic Cells
Cell 1 Cell 2
ωo 2π∙12MHz 2π∙12 MHz
Q 1.3066 0.5412
G 0 dB 0 dB
Active Gm-RC
fUGBW,opamp ≈ fcut-off
out-
out+
R1
C1
R
in+
R2
R1
C1
in-
2
5Microelectronics GroupDep. of Innovation Engineering-University of Lecce
VDD=600mVVDD=600mV0.13µm CMOS technology@Vth = 300mV
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2 RR
RRI
VV B
DDinDC
6Microelectronics GroupDep. of Innovation Engineering-University of Lecce
VDD=600mVVDD=600mV0.13µm CMOS technology@Vth = 300mV
Input CMFBNoiseNo-IdealitiesStability
7Microelectronics GroupDep. of Innovation Engineering-University of Lecce
Conclusion - Simulation ResultsLinearity / Noise DR=68dB@THD=-40dBc (vout=800mVpp,differential)
Total Power Consumption = 3.6 mW
8Microelectronics GroupDep. of Innovation Engineering-University of Lecce
Conclusion
Poster
