A 1.5-V 6-10-GHz Low LO-Power Broadband CMOS Folded-Mirror Mixer for UWB Radio

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A 1.5-V 6-10-GHz Low LO-Power Broadband CMOS Folded-Mirror Mixer for UWB Radio H.-W. Chung, H.-C. Kuo, and H.-R. Chuang Institute of Computer and Communication Engineering, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, R. O. C Presenter : Meng-Long Hsin 1

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A 1.5-V 6-10-GHz Low LO-Power Broadband CMOS Folded-Mirror Mixer for UWB Radio. H.-W. Chung, H.-C. Kuo, and H.-R. Chuang Institute of Computer and Communication Engineering, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, R. O. C. - PowerPoint PPT Presentation

Transcript of A 1.5-V 6-10-GHz Low LO-Power Broadband CMOS Folded-Mirror Mixer for UWB Radio

A 1.5-V 6-10-GHz Low LO-Power Broadband CMOS Folded-Mirror Mixer for UWB Radio

H.-W. Chung, H.-C. Kuo, and H.-R. ChuangInstitute of Computer and Communication Engineering, Department of Electrical Engineering,

National Cheng Kung University,Tainan, Taiwan, R. O. C

Presenter : Meng-Long Hsin

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Abstract• A 6-10 GHz broadband down conversion mixer

for UWB radio is presented.

• The broadband mixer only needs a low LO power of -3 dBm which can reduce the effect of LO leakage and DC offset.

• The broadband mixer exhibits a maximum conversion gain of 0.8 dB, and a DC power consumption of 15.75 mW at =1.5V.DDV

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Outline

• Introduction

• Circuit Design

• Implementation and Measurement Results

• Conclusion

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Introduction

• DS-UWB technology can be applied to three frequency band (3.1-5.15 GHz, 5.8-10.6 GHz, and both of them).

• The LO frequency is chosen at 8 GHz and the mixer directly down converts the 6-10 GHz RF signal into the 0-2 GHz IF frequency band.

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RF front-end architecture

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架構圖

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Design of the input stage

Input balun / transconductance stage

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Consideration on the LO port

LO matching network

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Design of the switch stage

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Design of the output stage

Output balun

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Simulation Results

Measured conversion gain and noise figure

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Simulation Results(cont.)

Measured input P1dB and IIP3

Measured LO-RF,LO-IF and RF-IF isolation

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Chip micrograph

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Conclusion

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RF Frequency Range 6~10 GHz

IF Frequency Range 100MHz~2GHz

LO Power@8 GHz -3dBm

RF Return Loss >14dB

LO Return Loss@8 GHz 15dB

Conversion -1.8~0.8dB@ 6~7.9GHz-3~-0.4dB@ 8.1~10GHz

P1dB -6 dBm@ 6~7.9GHz-4 dBm@ 8.1~10GHz

IIP3 -1.4~0.4 dBm @ 6~7.9GHz-0.3~-1.8 dBm @ 8.1~10GHz

LO-RF Isolation 30dB

Die Size 1.06×1.112mm

Thanks for your attention.

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