8 July 2015KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)1 KETEK SiPM Silicon...
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Transcript of 8 July 2015KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)1 KETEK SiPM Silicon...
1 8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)
KETEK
SiPM
Silicon Photomultipliers
Recent developments at KETEKJuly, 2015
KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)2
SiPM solutions realized by KETEK
8 July 2015
• KETEK company profile
• KETEK SiPM off-the-shelf devices - status and latest achievements
• KETEK customized solutions
• KETEK production setup
• MEPHI / KETEK CMOS integration
• Summary and outlook
3 8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)
KETEK
SiPM
• Midsize, family-owned enterprise, formation 1989 by Dr. Josef
Kemmer
• Number of employees: 81
• Managing directors: Silvia Wallner, Dr. Reinhard Fojt
• Major product line: SDD modules, detector electronics and
complete systems
• Global market leader (SDD) 2014: approx. 45%
• Emerging product line: Silicon Photo Multiplier
Modules (SiPM)
• Very high PDE- up to 60% for 50µm cell type @420 nm- up to 37% for 15µm cell type @420 nm
• Huge gain- min. 106
• Optimized for blue light sensitivity- 420nm peak sensitivity
• Low dark rate and excess noise- DR down to 100kHz/mm2
- XT down to below 5% at 20% Overvoltage- DR and XT dep. on cell- and device type
• Huge bias voltage range ofstable operation- up to 40% overvoltage
• Extremely low temperature coefficient- below 1% above 10% overvoltage
• Single channel portfolio- 4 chip / package sizes- 5 micropixel types
Key Features of KETEK´s SiPM Sensors
8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)4
VBD: 25.5 V
PM1150: Measurements performed by CERN / Iouri Musienko(1.0 mm2 active area, 50 µm cell pitch, 70% GE, no trench)
• Very high PDE- up to 60% for 50µm cell type @420 nm- up to 37% for 15µm cell type @420 nm
• Huge gain- min. 106
• Optimized for blue light sensitivity- 420nm peak sensitivity
• Low dark rate and excess noise- DR down to 100kHz/mm2
- XT down to below 5% at 20% Overvoltage- DR and XT dep. on cell- and device type
• Huge bias voltage range ofstable operation- up to 40% overvoltage
• Extremely low temperature coefficient- below 1% above 10% overvoltage
• Single channel portfolio- 4 chip / package sizes- 5 micropixel types
Key Features of KETEK´s SiPM Sensors
CERN06: Measurements performed by CERN / Iouri Musienko(15µm cell pitch, 37% PDE max)
8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)5
KETEK SiPM Portfolio
NEW Package 2.0
NEW SiPM Array
8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)6
4.5 5.0 5.5 6.0 6.50
200
400
600
800
1000
Co
un
ts
Time [ns]
Pos 1 Pos 2 Pos 3 Pos 4 Pos 5 Pos 6 Pos 7 Pos 8 Pos 9
repeated: Pos3
• Transit-Time-Delay (TTD) leads to asymmetrical SPTR distribution
• TTD is dominating factor for SPTR
• Improvement of TTD will help to achieve better SPTR
Motivation for SPTR- and TTD-studies
3 4 5 6 7 8 9 100
2
4
6
8
10
Am
plit
ud
e
[mV
]
Time [ns]
Pos 1 Pos 2 Pos 3 Pos 4 Pos 5 Pos 6 Pos 7 Pos 8 Pos 9
repeated: Pos 3
Averaged waveforms Localized SPTR measurements
8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)7
Comparison of Transit-Time-Delay and SPTR• Significant decrease of TTD (900 ps -> 170 ps)
• Better amplitude stability
• Symmetrical SPTR distribution with 215±7 ps
3.5 4.0 4.5 5.00.0
0.2
0.4
0.6
0.8
1.0
Rel
. Cou
nts
Time [ns]
Standard PM3350T Modified PM3350T
FWHM=(215+/-7)ps
4 5 6 7 8 9 10
0
2
4
6
8
10
12
Am
plitu
de [
mV
]
Time [ns]
Standard PM3350T Modified PM3350T
Averaged waveforms SPTR measurements
8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)8
Enhanced optical cross-talk suppression
1st TrenchGeneration Metal filled
trench
< 1 µmAt 5 V overvoltage (typical operation condition):Reduction from 17 % down to < 3 % (factor 5)
• Measurement based on dark rate ph.e. spectrum
• XT = Int(>1.5 phe)/Int(>0.5 phe)
XT reduction by factor 5
8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)9
Customized SiPM solutions
• LTCC support plate with BGA solder pads
• Two 64-channel SiPM-chips
• Thin glass lid chip protection
• Glop top bond wire protection
8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)10
Customized packaging
6.0 mm x 6.0 mmActive Area
TO8-package incl. cooling for extremely low DR
KETEK Ultra Low Noise SiPM:Flexible technology for customized packaging solutions
• Lower Noise at lower temperatures
• Different SiPMs up to 36mm²
• Quartz-Window with double-sided ARC
8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)11
Customized packaging
Customized Arrays
256 channel array build with PM11
KETEK Sensor Arrays:Flexible technology for customized array solutions
• Array solution with SMD devices
• Different sensor boards
• Large area detection systems
8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)12
SiPM production setup – two facilities
KETEK inhouse production
• Technology development
• Prototyping
• Customized products
• Variable packaging options
KETEK foundry production
• High volume production
• Fast throughput time
• Low cost
• Electronics integration
Excellent setup for cost effective innovations
8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)13
SiPM – CMOS-integration
8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)14
• R&D activity together with MEPHI
• Target: SiPM readout for large area SiPM
• Problem: Signal degradation with scaling of the active area due to increase of the parasitic capacitance
• Approach:- signal of small micro pixel sub-groups is amplified on chip level- sub-group signals are capacitive decoupled from each other- CMOS only outside of active area to keep GE (PDE) as high as possible- Separation of CMOS- and sensor part minimizes electro-optical crosstalk of the active elements
G. Visser (Indiana Univ.)
Summary and Outlook
• KETEK present standard SiPM devices feature- a high PDE- a very good voltage and temperature stability- a low excess noise
• KETEK SiPM technology and setup supports customized- chip design- packaging solutions
• KETEK new standard Package 2.0 introduces- 4-side-tileability- improved TTD / SPTR - reduced XT
• Present focus- Further improvement of the basic SiPM parameters PDE, DR and recovery time- enhanced GE
• Outlook- Together with MEPHI RnD on integration of electronics on chip-level
8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)15
2 6YEARS1989 - 2015THANKY O U
8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)16
17
Websitewww.ketek.biz
8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)17
Basic Construction of the KETEK Microcell
• Silicon P on N structure with high Geiger efficiency
• Shallow entrance window with high quantum efficiency
• Optimized geometrical fill factor High photon detection efficiency
Section of KETEK SiPM Microcell
P+- Window
N - Silicon
Bias LineQuenchingResistor
Trench
8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)18
KETEK SiPM Technologies
KETEK Trench Technology• Technology with improved optical barrier
and low-RC readout
• Devices with low crosstalk and improved timing
• Particularly suitable for large microcells and large area devices
KETEK Non-Trench Technology• Technology optimized for maximum
geometrical efficiency (GE)
• Devices with very high PDE and dynamic range
• Particularly suitable for small microcells and small active area
8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)19
Ongoing
6.0 mm x 6.0 mmActive Area
KETEK TSV Technology:Further improved geometrical efficiency (GE)
• R&D on Through Silicon Via interconnects
• Optimized geometrical efficiency
• 4-site tileable devices
8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)20