54ACT157 radiation report - STMicroelectronics...SEL results for four ACMOS devices tested with two...

September 2013 DocID025222 Rev 1 1/41

TN1129Technical note

54ACT157 radiation report

Introduction

This technical note provides details of the total ionizing dose (TID) and the single event effects (SEE) that cover the QML-V-RHA qualification of the 54ACT157 device. It includes:

• TID results up to 300 krad (Si)

• SEE results:

– showing single event latchup (SEL) immunity up to 120 MeV-cm2/mg effective linear energy transfer (effective LET).

– including single event transient (SET) and single event upset (SEU) characterizations.

www.st.com

http://www.st.com

Contents TN1129

2/41 DocID025222 Rev 1

Contents

1 Total ionizing dose (TID) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2 Single event effects (SEE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.1 Test strategy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.2 Test conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.2.1 Reference documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.2.2 Facilities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.2.3 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

2.3 Test results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

2.3.1 SEL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2.3.2 SET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2.3.3 SEU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

3 Glossary of terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Appendix A General test setup (UCL). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Appendix B SEL test method (UCL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Appendix C SEL test principle (UCL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Appendix D SET test method (UCL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Appendix E SET test principle (UCL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Appendix F SET block diagram (TAMU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Appendix G SEU test method (TAMU). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Appendix H Summary of SEL runs 70 to 75 for the 54AC14 device . . . . . . . . . 24

Appendix I Summary of SEL runs 76 to 80 for the 54AC174 device . . . . . . . . 24

Appendix J Summary of SEL runs 1 to 6 for the 54AC244 device . . . . . . . . . . 25

DocID025222 Rev 1 3/41

TN1129 Contents

Appendix K Summary of SEL runs 1 to 7 for the 54AC374 device . . . . . . . . . . 26

Appendix L Summary of SEL runs 1 to 8 for the 54AC164245 device . . . . . . . 27

Appendix M Summary of SET runs 1 to 15 for the 54AC14 device . . . . . . . . . . 28

Appendix N Summary of SET runs 1 to 6 for the 54AC244 device . . . . . . . . . . 29

Appendix O Summary of SET runs 1 to 7 for the 54AC374 device . . . . . . . . . . 30

Appendix P SET test results for the 54AC164245 (UCL). . . . . . . . . . . . . . . . . . . 31

Appendix Q Summary of SET runs 9 to 85 for the 54AC164245 device . . . . . . 33

Appendix R Summary of SEU runs 81 to 106 for the 54AC174 device . . . . . . . 37

Appendix S Summary of SEU runs 1 to 7 for the 54AC374 device . . . . . . . . . . 39

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

List of tables TN1129

4/41 DocID025222 Rev 1

List of tables

Table 1. TID test parameters and conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6Table 2. TID results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6Table 3. Facilities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7Table 4. Ions used in TAMU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7Table 5. Ions used in UCL (cocktail number 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8Table 6. Ions used in UCL (cocktail number 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8Table 7. 54AC14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8Table 8. 54AC174. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Table 9. 54AC244. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Table 10. 54AC374. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Table 11. 54AC164245. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Table 12. SEL results for four ACMOS devices tested with two heavy ions. . . . . . . . . . . . . . . . . . . . 11Table 13. SET results for four ACMOS devices tested with four heavy ions . . . . . . . . . . . . . . . . . . . 12Table 14. Worst SET for the 54AC244 device, S/N = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Table 15. Worst SET for the 54AC374 device, S/N = 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Table 16. Worst SET for the 54AC164245 device, S/N = 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Table 17. SEU results for two ACMOS devices tested with four heavy ions . . . . . . . . . . . . . . . . . . . 15Table 18. Worst SEU for the 54AC174 device, S/N = 5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16Table 19. Worst SEU for the 54AC374 device, S/N = 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16Table 20. Test apparatus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19Table 21. Summary of SEL runs 70 to 75 for the 54AC14 device . . . . . . . . . . . . . . . . . . . . . . . . . . . 24Table 22. Summary of SEL runs 76 to 80 for the 54AC174 device . . . . . . . . . . . . . . . . . . . . . . . . . . 24Table 23. Summary of SEL runs 1 to 6 for the 54AC244 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25Table 24. Summary of SEL runs 1 to 7 for the 54AC374 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26Table 25. Summary of SEL runs 1 to 8 for the 54AC164245 device . . . . . . . . . . . . . . . . . . . . . . . . . 27Table 26. Summary of SET runs 1 to 15 for the 54AC14 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28Table 27. Summary of SET runs 1 to 6 for the 54AC244 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29Table 28. Summary of SET runs 1 to 7 for the 54AC374 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30Table 29. Summary of SET runs 9 to 85 for the 54AC164245 device . . . . . . . . . . . . . . . . . . . . . . . . 33Table 30. Summary of SEU runs 81 to 106 for the 54AC174 device . . . . . . . . . . . . . . . . . . . . . . . . . 37Table 31. Summary of SEU runs 1 to 7 for the 54AC374 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39Table 32. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

DocID025222 Rev 1 5/41

TN1129 List of figures

List of figures

Figure 1. 54AC14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8Figure 2. 54AC174. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Figure 3. 54AC244. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Figure 4. 54AC374. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Figure 5. 54AC164245. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Figure 6. SET Weibull cross section for the 54AC244 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Figure 7. SET Weibull cross section for the 54AC374 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Figure 8. SET Weibull cross section for the 54AC164245 device . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Figure 9. SEU Weibull cross section for the 54AC174 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Figure 10. SEU Weibull cross section for the 54AC374 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16Figure 11. Test setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19Figure 12. Common SEL characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20Figure 13. Shape of OUT* and OUT/ signals. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21Figure 14. SET block diagram (TAMU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22Figure 15. Worst case on run 58, 132Xe26, tilt @ 0°. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31Figure 16. Worst case on run 41, 132Xe26, tilt @ 52°. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31Figure 17. Worst case on run 34, 132Xe26, tilt @ 52°. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32Figure 18. Worst case on run 16, 132Xe26, tilt @ 52°. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Total ionizing dose (TID) TN1129

6/41 DocID025222 Rev 1

1 Total ionizing dose (TID)

TID test parameters, conditions, and results for the 54ACT157 device are presented below. 54ACT157 is a rad-hard quad 2-channel multiplexer. It was qualified up to 300 krad (Si).

Table 1. TID test parameters and conditions

Test parameter Test condition

Test method MIL-STD-883 TM1019

Applied spec SMD 5962-89688

Test facility CEA, Saclay, France

Total dose 300 krad

Dose rate 60 rad(Si)/s

Bias voltage 5.5 V

Bias conditions Inputs at high level

Limits

Before irradiationICC ≤ 4 μA

ICCT ≤ 1.6 μA

After room temperature annealing

ICC ≤ 50 μA

ICCT ≤ 1.6 μA

Table 2. TID results

S/N

Test results at 0 krad

Test results at 300 krad

After room temperature

annealing

Functional test

passed?

ICC value (μA)

ICCT value (mA)

Functional test

passed?

ICC value (μA)

ICCT value (mA)

Functional test

passed?

ICC value (μA)

ICCT value (mA)

1

Yes0.070

0.410

Yes

256.0 0.480

Yes

33.9 0.340

2 0.420 222.0 0.440 29.0 0.320

30.410

228.0 0.460 25.7 0.330

4 232.0 0.450 26.6 0.320

Ref(1) 0.090 0.440 0.090 0.440 0.090 0.440

1. Ref = reference part

DocID025222 Rev 1 7/41

TN1129 Single event effects (SEE)

2 Single event effects (SEE)

2.1 Test strategy

The ACMOS logic series was characterized under heavy ions through five test vehicles: 54AC14, 54AC174, 54AC244, 54AC374, and 54AC164245. These test vehicles were chosen because they are representative of the technology.

2.2 Test conditions

2.2.1 Reference documents

Please refer to the following Online test procedures:

• JESD57

• ASTM F 1192

2.2.2 Facilities

The devices were tested at two facilities (see Table 3).

Table 4, Table 5, and Table 6 show the heavy ions used in each facility and their respective energy, range and linear energy transfer (LET).

Table 3. Facilities

Texas A&M cyclotron facility (TAMU), Texas, USA

Universite Catholique de Louvain (UCL), Louvain-La-Neuve, Belgium

Devices tested

54AC14, 54AC174 54AC244, 54AC374, 54AC164245

Table 4. Ions used in TAMU

Ions Energy (MeV) Range (μm(si)) LET (MeV-cm2/mg)

40 Ar 18 599 220 7.7

84 Kr 36 1259 149 25.4

129 Xe 54 1934 124 47.3

165 Ho 67 2474 112 64.3

Single event effects (SEE) TN1129

8/41 DocID025222 Rev 1

For further information, please refer to Appendix A, Appendix B, Appendix C, Appendix D, Appendix E, Appendix F, and Appendix G. Data are presented by facility and then by “event effects”.

2.2.3 Device information

Figure 1. 54AC14

Table 5. Ions used in UCL (cocktail number 1(1))

1. See Appendix B: SEL test method (UCL)


132 Xe 26 459 43 55.9

Table 6. Ions used in UCL (cocktail number 2(1))

1. See Appendix D: SET test method (UCL)


58 Ni 18 567 98 20.6

83 Kr 25 756 92 32.4

Table 7. 54AC14

Standard microcircuit

drawing (SMD)Function Samples used Date code Date test Wafer fab

5962-87624Rad-hard

hex Schmitt inverter

5 for SEL5 for SET

0605A 20-Jul-2007 Agrate

Die marking Die layout Flat package 14

DocID025222 Rev 1 9/41


Figure 2. 54AC174

Figure 3. 54AC244

Table 8. 54AC174



5962-87626Rad-hard

hex D-type flip flop with clear

5 for SEL5 for SEU

0432A 20-Jul-2007 Agrate

Table 9. 54AC244



5962-87552

Rad-hard octal bus buffer

line driver 3-state

1 for SEL1 for SET

N/A 03-Nov-2008Agrate,

Carrollton




10/41 DocID025222 Rev 1

Figure 4. 54AC374

Figure 5. 54AC164245

Table 10. 54AC374



5962-87694Rad-hard

octal D-type flip flop 3-state

2 for SET2 for SEU

N/A 03-Nov-2008Agrate,

Carrollton

Table 11. 54AC164245



5962-98580

Rad-hard 16-bit

transceivor 3.3 V to 5.5 V bidirectional level shifter

4 for SEL4 for SET

N/A 26-Apr-2010 Ang Mo Kio



DocID025222 Rev 1 11/41


2.3 Test results

2.3.1 SEL

Table 12 presents the SEL results for four ACMOS devices (54AC14, 54AC174, 54AC244, and 54AC164245) tested with two heavy ions (Ho and Xe).

No SEL was detected for any of the devices. These devices were SEL immune up to 120 MeV-cm2/mg. For further details, refer to Appendix H, Appendix I, Appendix J, Appendix K, and Appendix L.

2.3.2 SET

Table 13 presents the SET results for four ACMOS devices (54AC14, 54AC244, 54AC374, and 54AC164245) tested with four heavy ions (Ar, Kr, Xe, and Ni). The threshold voltage was ± 50 mV and the sampling rate was 1 G/s. Some SET test results were recorded despite being very short (approximately 100 ns).

Table 12. SEL results for four ACMOS devices tested with two heavy ions

Device 54AC14 54AC174 54AC244 54AC164245

Ion Ho Xe

Fluence(ions/cm2)

≤ 1 x 107 ≤ 1 x 106

LET max.(MeV-cm2/mg)

71 56 68

Effective LET max.(MeV-cm2/mg)

120 112 110

Temperature(°C)

125

Supply voltage VCC = VCC max = 6 V


12/41 DocID025222 Rev 1

No SET was detected for the 54AC14 device.

Figure 6, Figure 7, and Figure 8 below show the SET cross section curves for the 54AC244, 54AC374, and 54AC164245 devices. The curves below were parametrized using the Weibull fit. The worst amplitude was 150 mV.

Figure 6. SET Weibull cross section for the 54AC244 device

Table 13. SET results for four ACMOS devices tested with four heavy ions

Device 54AC14 54AC244 54AC374 54AC164245

Ion Ar, Kr Xe Xe, Kr, Ar Xe, Kr, Ni

Fluence(ions/cm2)

≤ 1 x 108 ≤ 1 x 107


41 56 68


83 112 110

Saturated cross section

- 7.00E-07 7.30E-05

Threshold LET - 55.9 21.3

Temperature(°C)

25

Supply voltage VCC = VCC max = 2 to 5.5 V

DocID025222 Rev 1 13/41





14/41 DocID025222 Rev 1

Table 14, Table 15, and Table 16 below present the worst SET for the 54AC244, 54AC374, and 54AC164245 devices.

For further information, please refer to Appendix M, Appendix N, Appendix O, Appendix P, and Appendix Q.

Table 14. Worst SET for the 54AC244 device, S/N = 1

Run IonLET

(MeV-cm2/mg)Effective LET(MeV-cm2/mg)

Fluence(ions/cm2)

Number of events

Cross section

W S

2Xe 55.9 111.8 1.00E+07

7 7.00E-0755 4

5 3 3.00E-07


Run IonLET


Fluence(ions/cm2)

Number of events

Cross section

W S

2Xe 55.9 111.8 1.00E+07

7 7.00E-0755 4

3 3 3.00E-07


Run IonLET


Fluence(ions/cm2)

Number of events

Cross section

W S

25Xe 67.7

109.96

1.00E+06

73 7.30E-05

63 554 67.7 41 4.10E-05

73 Kr 31 31 12 1.20E-05

83 Ni 21.3 21.3 1 1.00E-06

DocID025222 Rev 1 15/41


2.3.3 SEU

Table 17 presents the SEU results for two ACMOS devices (54AC174 and 54AC374) tested with four heavy ions (Ho, Xe, Kr, and Ar).

Figure 9, and Figure 10 below show the SEU Weibull cross section curves for the 54AC174 and 54AC374 devices.

Figure 9. SEU Weibull cross section for the 54AC174 device

Table 17. SEU results for two ACMOS devices tested with four heavy ions

Device 54AC174 54AC374

Ion Xe, Kr, Ar, Ho Xe, Kr, Ar

Fluence(ions/cm2)

≤ 1 x 108 ≤ 1 x 107


71 56


120 112

Saturated cross section 8.70E-07 2.94E-06

Threshold LET 8.5 10.1

Temperature(°C)

25

Supply voltage VCC = VCC max = 2


16/41 DocID025222 Rev 1

Figure 10. SEU Weibull cross section for the 54AC374 device

Table 18 and Table 19 present the worst SEU for the 54AC174 and 54AC374 devices.

For further information, please refer to Appendix R and Appendix S.

Table 18. Worst SEU for the 54AC174 device, S/N = 5

Run IonLET


Fluence(ions/cm2)

Number of events

Cross section

W S

81

Ho 70.2

102.5 9.99E+06 139 8.70E-07

65 6

83 99.81.00E+07

136 8.50E-07

82 70.2 79 4.94E-07

102

Ar 8.5

33.3 2.69E+07 41 8.66E-08

103 28.5 1.94E+07 21 6.77E-08

104 25.8 5.66E+07 3 3.31E-09

101 24.9 1.02E+08 1 6.13E-10

100 21.0 1.09E+08 2 1.15E-09

Table 19. Worst SEU for the 54AC374 device, S/N = 2

Run IonLET


Fluence(ions/cm2)

Number of events

Cross section

W S

2Xe 55.9

111.8 1.00E+07 235 2.94E-06

60 31 55.9 5.67E+06 50 1.10E-06

4 Kr 32.4 32.41.00E+07

56 7.00E-07

7 Ar 10.1 20.2 7 8.75E-08

DocID025222 Rev 1 17/41

TN1129 Glossary of terms

3 Glossary of terms

Cross section: The number of events per unit fluence, expressed in units of cm²/device or cm²/bit. In the event of the device being tilted at an angle θ, the fluence must be corrected by multiplying it by cosine θ.

DUT: Device under test

Effective LET: The equivalent LET obtained by tilting the device under test with respect to the axis beam, hence increasing the path length of the ion and the total energy deposited. Effective LET = Incident LET x 1/cosine θ where θ is the tilt angle of the device. Effective LET may also be used in referring to the actual LET in a sensitive volume after taking into account the energy loss in “dead layers” such as metalization and passivation.

Energy: The energy imparted to the ion by the accelerator. This may be in units of total energy (MeV) or energy per nucleon (MeV/n).

Fluence: The total amount of particle radiant energy incident on a surface in a given period of time, divided by the area of the dimensions (in cm2/bit). Fluence also includes the flux integrated over time. Units are ions/cm2.

Flux: The number of ions passing through a unit area perpendicular to the beam in one second, expressed in ions/cm²/s.

Ion species: Type of ion being used for irradiation (e.g. oxygen, neon)

Level of interest: A cross section, energy, LET, or fluence having some particular significance for a program or project.

Linear energy transfer (LET): The amount of energy deposited per unit length along the path of the incident ion. It is expressed in units of MeV-cm2/mg which is the energy per unit length divided by the density of the irradiated medium.

Range: The distance traveled, without straggling, in the target material by the specified ion of a given charge state and energy.

Saturated cross section - also known as asymptotic cross section: The cross section for which an increase in LET does not result in an increased number of events.

Serial number (S/N): Unique code and consecutive number assigned to all devices

Single event burnout (SEB): Triggering of the parasitic bipolar structure in a power transistor, accompanied by regenerative feedback, avalanche, and high current condition. A SEB is potentially destructive unless suitably protected.

Single event effect (SEE): Any measurable or observable change in the state or performance of a microelectronic device, component, subsystem, or system (digital or analog) resulting from a single energetic particle strike.

Single event functional interrupt (SEFI): A soft error that causes the component to reset, lock-up, or otherwise malfunction. SEFIs typically occur in complex devices with built-in state/control sections like modern memories (SDRAM, DRAM, NOR-and NAND-Flash) and all types of processors, FPGA, or ASICS. Two main types of SEFIs are distinguished depending on the action required to restore functionality: reset by software or by power cycling. The stored data may or may not be lost.

Glossary of terms TN1129

18/41 DocID025222 Rev 1

Single event gate rapture or dielectric rupture (SEGR): Destructive rupture of a gate oxide or any dielectric layer by a single ion strike. This leads to gate leakage currents under bias and can be observed in power MOSFETs, linear integrated circuits (with internal capacitors), or as stuck bits in digital devices.

Single event latchup (SEL): A permanent and potentially destructive state of the device under test whereby a parasitic thyristor structure is triggered by an ion strike and creates a low impedance, high current path.

Single event transient (SET): A temporary voltage excursion (voltage spike) at a node in a logic or linear integrated circuit caused by a single energetic particle strike.

Single event upset (SEU) - also known as a soft error: The change of state of a latched logic cell from one to zero or vice-versa. A single event upset is non-destructive and the logic element can be rewritten or reset.

Threshold LET: The lowest LET at which a SEE occurs.

Weibull fit: F(x) = A (1-exp{-[(x-x0)/W]s}), with

X = effective LET in MeV-cm2/mg F(x) = the SEE cross section in cm² A = limiting or plateau cross section x0 = onset parameter, such that F(x) = 0 for x < x0 W = width parameter s = a dimensionless exponential

DocID025222 Rev 1 19/41

TN1129 General test setup (UCL)

Appendix A General test setup (UCL)

The test board required the following apparatus (Table 20) and setup (Figure 11) to operate properly.

Figure 11. Test setup

Table 20. Test apparatus

Equipment Function Test conditions

MI-03 Power supply VDD1 and VDD2

ME-44, ME-48 Oscilloscope -

ME-53 Guard systemVDD1: Gamme 3, Ith = 80 mAVDD2: Gamme 3, Ith = 80 mA

1

2CLK1

R1 50

VCC_INV

C9

100 nF

SQR_IN

CLK12

U2

3

4CLK1

NC7SZ04

100 nF

C10

VDD1 VDD2

C11

100 nF

5

7 18 31 42

U1

GN

D V

CC

VC

C1

VC

C2

VC

C3

VC

C4

CLK1CLK1

B1B2B3B4B5B6

B1B2B3B4B5B6

OUTOUT

A1A2A3A4A5A6A7A8

A1A2A3A4A5A6A7A8

54ACS164245

1

2356891112

1314161719202223

2425

2627293032333536

3738404143444647

481-DIR

1-B11-B21-B31-B41-B51-B61-B71-B8

2-B1

2-B32-B42-B52-B62-B72-B8

2-B2

2-DIR

1-G

1-A11-A21-A31-A41-A51-A61-A71-A8

2-A1

2-A32-A42-A52-A62-A72-A8

2-A2

2-G

GN

D

GAMS2501131615CB

100 nF

SEL test method (UCL) TN1129

20/41 DocID025222 Rev 1

Appendix B SEL test method (UCL)

For SEL test detection, runs up to a fluence of 1.107 ions/cm² for SEL monitoring only were performed. This configuration allowed the latchup sensitivity of the device to be verified with cocktail number 1 (see Table 5: Ions used in UCL (cocktail number 1)). The test stopped when the maximum fluence was reached or when a hundred events were detected.

Appendix C SEL test principle (UCL)

A power supply was applied to the device under test (DUT) through the guard system. To obtain 6 V on the DUT, a voltage of 6.3 V was applied. The threshold current of the guard system was set to 80 mA. When an event occurred, the guard system sent a trigger command to the oscilloscope. The power supply was held ‘on’ for 1 ms and cut ‘off’ for 7 ms. It was then restarted with nominal current consumption.

At the end of each run, the test program read the “local scope counter” of the oscilloscope which represented the total event count. The recorded current waveforms were downloaded and stored.

Event description

During the test, the guard system controlled the device’s current. If the value exceeded 80 mA, the delatcher was triggered and the event was counted as a SEL.Figure 12 shows a common SEL characteristic.

Figure 12. Common SEL characteristic

1. Legend: Tm = hold time for 1 ms; Tc = cut off time for 7 ms

DocID025222 Rev 1 21/41

TN1129 SET test method (UCL)

Appendix D SET test method (UCL)

For SET test detection, runs up to a fluence of 1x106 ions/cm² were performed. Latchup monitoring was also performed during these tests. This configuration allowed the SET and the SEL sensitivity of the device to be verified with cocktail number 2 (see Table 6: Ions used in UCL (cocktail number 2)). The test stopped when the maximum fluence was reached or when four hundred events were detected.

Appendix E SET test principle (UCL)

The guard system was used on the power supply of the component to detect SEL and to prevent the destruction of the DUT. An oscilloscope was connected to OUT*(DUT pin 22) and OUT/(DUT pin 23) to perform the SET test. This oscilloscope was configured to monitor pulse width on the output signals. The shape of the OUT* and OUT/ signals are shown in Figure 13.

Figure 13. Shape of OUT* and OUT/ signals

Pulse width modifications of both signals were detected. When such a modification occurred, it was due to SET. The oscilloscope internal counter was then incremented and the trace was stored.

At the end of each run, the test program read the “local scope counter” of the oscilloscope which represented the total event count. The recorded current waveforms were downloaded and stored.

SET block diagram (TAMU) TN1129

22/41 DocID025222 Rev 1

Appendix F SET block diagram (TAMU)

The DUT was irradiated to a maximum total ion fluence of 1x108 ion/cm². During the course of the test, five different serial numbers of the DUT (101, 102, 103, 104, 105) were irradiated with a minimum effective LET of 33.3 MeV-cm²/mg and a maximum effective LET of 82.9 MeV-cm²/mg. Except for the test where serial number 101 was irradiated to 1E8 ions/cm², the tests used a maximum fluence of 1E7 ions/cm². At TAMU, the lids were removed from the DUT to give full exposure to the top surface of the die using the 15 MeV/n beam.

The output was monitored with both a data acquisition system to allow transients from all six outputs (1Y, 2Y, 3Y, 4Y, 5Y and 6Y) to be captured, and a pair of high-resolution oscilloscopes to capture detailed images of the transient behavior on a sub-set of the transients. Output 1Y was monitored with the oscilloscope to capture both positive and negative going transients. The actual trigger setting was recorded in the run logs. The data acquisition system and the oscilloscopes were located in the control room while the power supplies, meters, and switch matrix were located in the exposure room. The outputs were brought to the control room using shielded SMA and BNC cables.

Figure 14. SET block diagram (TAMU)

DocID025222 Rev 1 23/41

TN1129 SEU test method (TAMU)

Appendix G SEU test method (TAMU)

The devices under test were irradiated to a maximum total ion fluence of 1x108 ions/cm² at a maximum effective LET of 120 MeV-cm²/mg using the worst-case voltage (3 V) and temperature (25 °C). The lids were removed from the devices prior to testing to give full exposure to the top surface of the die.

To achieve an effective linear energy transfer (LET) of 120 MeV-cm²/mg the devices were irradiated with Ho at an angle of approximately 54 degrees. The effective LET is the normal LET divided by the cosine of the angle of irradiation. The use of effective LET is accepted in test standards. The Ho range to the Bragg peak using a 15 MeV/n beam is 112 μm.

A variety of LETs and angles were used to obtain LET values from 8.5 to 120 MeV-cm²/mg.

Prior to and immediately following the heavy ion exposure, the devices underwent a “health check”. This test verified that the device met the datasheet specifications and did not suffer any degradation that would confound the SEU data.

The test platform also monitored for clear errors (all bits were set to “0”) and clock errors (all bits switched states simultaneously). Note that the inputs were held in the opposite state from the outputs so that if a clock transient occurred, all bits would flip simultaneously.

Su

mm

ary o

f SE

L ru

ns

70 to

75 fo

r the

54A

C14

de

viceT

N1

129

24/4

1D

ocID025

222 Re

v 1

Appendix H Summary of SEL runs 70 to 75 for the 54AC14 device

Appendix I Summary of SEL runs 76 to 80 for the 54AC174 device

Table 21. Summary of SEL runs 70 to 75 for the 54AC14 device

Run S/NVCC (V)

T (° C)

IonEnergy (MeV)

Range (μm)

LET (MeV-cm2/mg)

Tilt(° )

Effective range

Effective LET (MeV-cm2/mg)

Flux(#/cm2.s)

Time(s)

Fluence(#/cm2)

No. of events

70 103

6 125 Ho 2474 112 70.80 54 66 120.50

5.24E+04 3251.00E+07

0

71 104 5.17E+04 329

72 105 4.96E+04 173 5.05E+06

73 105 5.15E+04 166 5.04E+06

74 106 4.95E+04 344 1.00E+07

75 107 4.71E+04 361 9.99E+06


Run S/NVCC (V)

T (° C)

IonEnergy (MeV)

Range (μm)

LET (MeV-cm2/mg)

Tilt(° )

Effective range


Flux(#/cm2.s)

Time(s)

Fluence(#/cm2)

No. of events

76 1

5.5 125 Ho 2474 112 70.80 54 66 120.50

4.61E+04 3699.99E+06

0

77 2 4.58E+04 372

78 3 4.66E+04 365 1.00E+07

79 4 4.56E+07373

9.99E+06

80 5 4.56E+04 1.00E+07

TN

11

29S

um

mary

of S

EL

run

s 1

to 6 fo

r the

54A

C2

44 d

evic

e

DocID

025222 R

ev 1

25/41

Appendix J Summary of SEL runs 1 to 6 for the 54AC244 device


Run S/NVCC (V)

T (° C)

IonEnergy (MeV)

Range (μm)

LET (MeV-cm2/mg)

Tilt(° )

Effective range


Flux(#/cm2.s)

Time(s)

Fluence(#/cm2)

No. of events

1

1 6 125 Xe 459 43 55.90

60 22 111.807.88E+03 1271

1.00E+07 0

2 1.06E+04 945

30 43 55.90

1.76E+04 564

4 1.80E+04 556

560 22 111.80

9.04E+03 1108

6 8.74E+03 1147

Su

mm

ary o

f SE

L ru

ns

1 to 7

for th

e 54

AC

374 d

evic

eT

N1

129

26/4

1D

ocID025

222 Re

v 1

Appendix K Summary of SEL runs 1 to 7 for the 54AC374 device


Run S/NVCC (V)

T (° C)

IonEnergy (MeV)

Range (μm)

LET (MeV-cm2/mg)

Tilt(° )

Effective range


Flux(#/cm2.s)

Time(s)

Fluence(#/cm2)

No. of events

11

6 125

Xe 459 43 55.90

0 43 55.90 1.04E+04 547 5.67E+06

0

2

21

60 22 111.80

5.35E+03 1871

1.00E+07

2

31

9.79E+03 10222

41

Kr 756 92 32.40 0 92 32.40

1.36E+04 7392

51

1.24E+04 8092

61

Ar 372 119 10.10 60 60 20.20

9.47E+03 10572

71

9.12E+03 10982

TN

11

29S

um

mary

of S

EL

run

s 1

to 8

for th

e 5

4A

C1

642

45 d

evic

e

DocID

025222 R

ev 1

27/41

Appendix L Summary of SEL runs 1 to 8 for the 54AC164245 device


Run S/NVCC 1

(V)VCC 2

(V)T

(° C)Ion

Energy (MeV)

Range (μm)

LET (MeV-cm2/mg)

Tilt(° )

Effective range


Flux(#/cm2.s)

Time(s)

Fluence(#/cm2)

VCC 1 no. of events

VCC 2 no. of events

1 1

6 6 125 Xe 459 43 67.70

0 43 67.70

1.53E+04 655

1.00E+07 0 0

2 2 1.52E+04 659

3 3 1.42E+04 706

44

1.39E+04 720

5

52 27 109.96

9.17E+03 1090

6 3 9.88E+03 1012

7 2 8.97E+03 1115

8 1 9.87E+03 1013

Su

mm

ary o

f SE

T ru

ns

1 to 1

5 fo

r the 5

4A

C1

4 dev

ice

TN

112

9

28/4

1D

ocID025

222 Re

v 1

Appendix M Summary of SET runs 1 to 15 for the 54AC14 device

Table 26. Summary of SET runs 1 to 15 for the 54AC14 device

Run S/NVCC (V)

T (° C)

IonEnergy (MeV)

Range (μm)

LET (MeV-cm2/mg)

Tilt(° )

Effective range


Flux(#/cm2.s)

Time(s)

Fluence(#/cm2)

No. of events

Cross section/device

1

101

5

25

Ar 599 220

16.60

60

110

33.30

N/A N/A

9.98E+06

0 -

2

3

18.50 37.20

1.43E+08

43.3

1.01E+08

5 9.95E+07

6

2

1.00E+087

8102

Kr 1259 149 41.30 74 82.91

9 1.12E+05 1792

10103

N/A N/A

1.01E+07

11 1.00E+07

12104

9.94E+06

131.00E+07

14105

15 9.89E+06

TN

11

29S

um

mary

of S

ET

run

s 1

to 6 fo

r the

54A

C2

44 d

evic

e

DocID

025222 R

ev 1

29/41

Appendix N Summary of SET runs 1 to 6 for the 54AC244 device


Run S/NVCC (V)

T (° C)

IonEnergy (MeV)

Range (μm)

LET (MeV-cm2/mg)

Tilt(° )

Effective range


Flux(#/cm2.s)

Time(s)

Fluence(#/cm2)

No. of events


1

1 2 25 Xe 459 43 55.90

60 22 111.807.88E+03 1271

1.00E+07

0 -

2 1.06E+04 945 7 7.00E-07

30 43 55.90

1.76E+04 5640 -

4 1.80E+04 556

560 22 111.80

9.04E+03 1108 3 3.00E-07

6 8.74E+03 1147 0 -

Su

mm

ary o

f SE

T ru

ns

1 to 7

for th

e 54

AC

374 d

evic

eT

N1

129

30/4

1D

ocID025

222 Re

v 1

Appendix O Summary of SET runs 1 to 7 for the 54AC374 device


Run S/NVCC (V)

T (° C)

IonEnergy (MeV)

Range (μm)

LET (MeV-cm2/mg)

Tilt(° )

Effective range


Flux(#/cm2.s)

Time(s)

Fluence(#/cm2)

No. of events


11

2 25

Xe 459 43 55.90

0 43 55.90 1.04E+04 547 5.67E+06 0 -2

21

60 22 111.80

5.35E+03 1871

1.00E+07

3 3.00E-07

2 7 7.00E-07

31

9.79E+03 10224 4.00E-07

2 3 3.00E-07

41

Kr 756 92 32.40 0 92 32.40

1.36E+04 739

0 -

2

51

1.24E+04 8092

61

Ar 372 119 10.10 60 60 20.20

9.47E+03 10572

71

9.12E+03 10982

DocID025222 Rev 1 31/41

TN1129 SET test results for the 54AC164245 (UCL)

Appendix P SET test results for the 54AC164245 (UCL)

During irradiation, the SET results in Figure 15, Figure 16, Figure 17, and Figure 18 were observed.

Figure 15. Worst case on run 58, 132Xe26, tilt @ 0°


SET test results for the 54AC164245 (UCL) TN1129

32/41 DocID025222 Rev 1



TN

11

29S

um

ma

ry of S

ET

run

s 9 to 8

5 fo

r the

54

AC

164

245

de

vice

DocID

025222 R

ev 1

33/41

Appendix Q Summary of SET runs 9 to 85 for the 54AC164245 device


Run S/NVCC 1

(V)VCC 2

(V)T

(° C)Ion

Energy (MeV)

Range (μm)

LET (MeV-cm2/mg)

Tilt(° )

Effective range


Flux(#/cm2.s)

Time(s)

Fluence(#/cm2)

No. of events


9

1

5.5 5.5

25 Xe 459 43 67.70 52 27 109.96

1.02E+04 98

1.00E+06

0 -10 9.80E+03 102

115 3

9.17E+03 109

12 9.26E+03 108

2 2.00E-0613

3

59.17E+03 109

14 9.35E+03 107

153

9.09E+03 110 5 5.00E-06

16 9.26E+03 108 13 1.30E-05

17

2

5.5 5.59.09E+03 110 1 1.00E-06

18 8.93E+03 1120 -

195 3

9.35E+03 107

20 9.09E+03 110 3 3.00E-06

213 5

1.03E+04 974 4.00E-06

22 9.17E+03 109

23 Canceled without irradiation

24

2 3 3

25 Xe 459 43 67.70 52 27 109.96

8.85E+03 113

1.00E+06

18 1.80E-05

25 9.62E+03 104 73 7.30E-05

26 1.05E+04 95 61 6.10E-05

273 5.5 5.5 8.77E+03 114 0 -

28

Su

mm

ary o

f SE

T ru

ns

9 to 8

5 fo

r the 5

4A

C1

642

45 d

evice

TN

112

9

34/4

1D

ocID025

222 Re

v 1

29

3

5 3

25 Xe 459 43 67.70

52 27 109.96

9.09E+03 110

1.00E+06

0 -

30 9.52E+03 105 2 2.00E-06

31

3

51.00E+04 100 4 4.00E-06

32 1.06E+04 94 3 3.00E-06

333

1.01E+04 99 8 8.00E-06

34 9.26E+03 108 57 5.70E-05

35

4

5.5 5.51.01E+04 99 1 1.00E-06

36 1.05E+04 95 0 -

375 3

1.00E+04 100 3 3.00E-06

38 1.06E+04 94 2 2.00E-06

39

3

51.04E+04 96

3 3.00E-0640 9.71E+03 103

41

3

1.05E+04 95 7 7.00E-06

42 9.52E+03 105 18 1.80E-05

43 9.62E+03 104 16 1.60E-05

44

1

5 3

0 43 67.70

1.49E+04 670 -

45

3

51.45E+04 69

46 1.39E+04 721 1.00E-06

473

1.41E+04 71

48 1.37E+04 73 8 8.00E-06

492

5.5 5.5 1.39E+04 72 0 -

50 5 3 1.49E+04 67 2 2.00E-06

Table 29. Summary of SET runs 9 to 85 for the 54AC164245 device (continued)

Run S/NVCC 1

(V)VCC 2

(V)T

(° C)Ion

Energy (MeV)

Range (μm)

LET (MeV-cm2/mg)

Tilt(° )

Effective range


Flux(#/cm2.s)

Time(s)

Fluence(#/cm2)

No. of events


TN

11

29S

um

ma

ry of S

ET

run

s 9 to 8

5 fo

r the

54

AC

164

245

de

vice

DocID

025222 R

ev 1

35/41

51

2 3

5

25

Xe 459 43 67.70

0

43 67.70

1.45E+04 69

1.00E+06

0 -

52 1.56E+04 64 1 1.00E-06

53

3

1.37E+04 73 5 5.00E-06

54 1.39E+04 72 41 4.10E-05

55

3

5 1.33E+04 750 -

56

3

51.43E+04 70

571.49E+04 67

2 2.00E-06

58

3

4 4.00E-06

59 1.52E+04 66 22 2.20E-05

60

4

5.51.45E+04 69

0 -

615

1 1.00E-06

62 1.49E+04 670 -

63

3

51.47E+04 68

64

1.49E+04 67

2 2.00E-06

653

5 5.00E-06

66 7 7.00E-06

67

1

5

Kr 756 92 31.00 92 31.00

1.47E+04 68 0 -68

369 1.45E+04 69 1 1.00E-06

70

2

5 1.28E+04 780 -

713

5 1.00E+04 100

72 3 1.45E+04 69 1 1.00E-06


Run S/NVCC 1

(V)VCC 2

(V)T

(° C)Ion

Energy (MeV)

Range (μm)

LET (MeV-cm2/mg)

Tilt(° )

Effective range


Flux(#/cm2.s)

Time(s)

Fluence(#/cm2)

No. of events


Su

mm

ary o

f SE

T ru

ns

9 to 8

5 fo

r the 5

4A

C1

642

45 d

evice

TN

112

9

36/4

1D

ocID025

222 Re

v 1

73 2

3

3

25

Kr 756 92 31.00

0

92 31.00

1.43E+04 70

1.00E+06

12 1.20E-05

74

3

5 1.54E+04 650 -

75

3

1.52E+04 66

76 1.49E+04 67 2 2.00E-06

77

4

5 1.56E+04 640 -

78

3

5 1.47E+04 68

79

3

1.49E+04 67 1 1.00E-06

80 1.43E+04 70

0 -81 1

Ni 567 98 21.30 98 21.30

1.49E+04 67

822

1.45E+04 69

83 1.11E+04 90 1 1.00E-06

84 3 1.19E+04 840 -

85 4 1.45E+04 69


Run S/NVCC 1

(V)VCC 2

(V)T

(° C)Ion

Energy (MeV)

Range (μm)

LET (MeV-cm2/mg)

Tilt(° )

Effective range


Flux(#/cm2.s)

Time(s)

Fluence(#/cm2)

No. of events


TN

11

29S

um

ma

ry of S

EU

run

s 8

1 to

106 fo

r the

54A

C1

74 d

evic

e

DocID

025222 R

ev 1

37/41

Appendix R Summary of SEU runs 81 to 106 for the 54AC174 device

Table 30. Summary of SEU runs 81 to 106 for the 54AC174 device

Run S/NVCC (V)

T (° C)

IonEnergy (MeV)

Range (μm)

LET (MeV-cm2/mg)

Tilt(° )

Effective range


Flux(#/cm2.s)

Time(s)

Fluence(#/cm2)

No. of events


Cross section/

bit

81

5

3 25

Ho 2474 112 70.20

54 66 120.50 4.93E+04 345 9.99E+06 139 1.39E-05 8.70E-07

82 0 112 70.20 4.79E+04 2091.00E+07

79 7.90E-06 4.94E-07

8345 79 99.80

4.57E+04 310 136 1.36E-05 8.50E-07

84 1 4.86E+04 290 9.99E+06 112 1.12E-05 7.01E-07

85 2 0 112 70.20 5.33E+04 188

1.00E+07

79 7.90E-06 4.94E-07

86 3 54 66 120.50 5.25E+04 324 139 1.39E-05 8.69E-07

87

434

93 84.90 5.54E+04 218 99 9.90E-06 6.19E-07

88

Xe 1934 124 52.50

103 63.50 9.97E+04 121 76 7.60E-06 4.75E-07

89 0 124 52.50 9.50E+04 105 52 5.20E-06 3.25E-07

901

20 117 55.90 8.94E+04 119 9.97E+06 69 6.92E-06 4.33E-07

910

124 52.50 8.35E+04 120

1.00E+07

59 5.90E-06 3.69E-07

922

Kr 1259 149 28.50

154 28.50 8.39E+04 119 35 3.50E-06 2.19E-07

9334 124 34.40

8.82E+04 137 29 2.90E-06 1.81E-07

94

3

1.11E+05 224 2.06E+07 73 3.54E-06 2.21E-07

95 54 88 49.00 9.85E+04 344 1.99E+07 99 4.97E-06 3.11E-07

96 45 105 40.50 9.13E+04 309 2.00E+07 80 4.00E-06 2.50E-07

97

4Ar 599 220 8.50

0 220 8.50 1.36E+04 163 1.00E+08 0 - -

98 54 129 14.60 6.09E+05 282 1.01E+08 3 2.97E-08 1.86E-09

99 60 110 17.20 5.99E+05 340 1.02E+082

1.96E-08 1.23E-09

100 5 54 129 21.00 5.38E+05 345 1.09E+08 1.83E-08 1.15E-09

Su

mm

ary o

f SE

U ru

ns

81

to 1

06 fo

r the

54A

C1

74 d

evic

eT

N1

129

38/4

1D

ocID025

222 Re

v 1

101

5

3 25 Ar 599 220 8.50 54 129

24.90 4.99E+05 346 1.02E+08 1 9.80E-09 6.13E-10

102 33.30 4.52E+05 111 2.96E+07 41 1.39E-06 8.66E-08

103 28.50 4.70E+05 70 1.94E+07 21 1.08E-06 6.77E-08

10425.80

4.99E+05 193 5.66E+07 3 5.30E-08 3.31E-09

1052

4.98E+05 145 4.25E+07 4 9.41E-08 5.88E-09

106 27.10 5.01E+05 99 2.92E+07 12 4.11E-07 2.57E-08

Table 30. Summary of SEU runs 81 to 106 for the 54AC174 device (continued)

Run S/NVCC (V)

T (° C)

IonEnergy (MeV)

Range (μm)

LET (MeV-cm2/mg)

Tilt(° )

Effective range


Flux(#/cm2.s)

Time(s)

Fluence(#/cm2)

No. of events


Cross section/

bit

TN

11

29S

um

ma

ry of S

EU

run

s 1

to 7 fo

r the

54A

C3

74 d

evic

e

DocID

025222 R

ev 1

39/41

Appendix S Summary of SEU runs 1 to 7 for the 54AC374 device

Table 31. Summary of SEU runs 1 to 7 for the 54AC374 device

Run S/NVCC (V)

T (° C)

IonEnergy (MeV)

Range (μm)

LET (MeV-cm2/mg)

Tilt(° )

Effective range


Flux(#/cm2.s)

Time(s)

Fluence(#/cm2)

No. of events


Cross section/

bit

11

2 25

Xe 459 43 55.90

0 43 55.90 1.04E+04 547 5.67E+0653 9.35E-06 1.17E-06

2 50 8.82E-06 1.10E-06

21

60 22 111.80

5.35E+03 1871

1.00E+07

226 2.26E-05 2.83E-06

2 235 2.35E-05 2.94E-06

31

9.79E+03 1022215 2.15E-05 2.69E-06

2 211 2.11E-05 2.64E-06

41

Kr 756 92 32.40 0 92 32.40

1.36E+04 73955 5.50E-06 6.88E-07

2 56 5.60E-06 7.00E-07

51

1.24E+04 80942 4.20E-06 5.25E-07

2 39 3.90E-06 4.88E-07

61

Ar 372 119 10.10 60 60 20.20

9.47E+03 1057 2 2.00E-07 2.50E-082

71

9.12E+03 109812 1.20E-06 1.50E-07

2 7 7.00E-07 8.75E-08

Revision history TN1129

40/41 DocID025222 Rev 1

Revision history

Table 32. Document revision history

Date Revision Changes

10-Sep-2013 1 Initial release

DocID025222 Rev 1 41/41

TN1129

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.

All ST products are sold pursuant to ST’s terms and conditions of sale.

Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.Information in this document supersedes and replaces all information previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

© 2013 STMicroelectronics - All rights reserved

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com

54ACT157 radiation report - STMicroelectronics...SEL results for four ACMOS devices tested with two...

Documents

Transcript of 54ACT157 radiation report - STMicroelectronics...SEL results for four ACMOS devices tested with two...