50 50 mm

140 140 mm

MMaximaxim Titov, Titov, CEA Saclay, France CEA Saclay, France

Micromegas:Micromegas:

GEM +GEM +CMOS ASICCMOS ASIC

Thick GEM +Thick GEM +(THGEM)(THGEM)

OUTLINE:OUTLINE:

• Pestov CountersPestov Counters

• Resistive Plate ChambersResistive Plate Chambers

• Micro-Pattern Gas DetectorsMicro-Pattern Gas Detectors(GEM, Micromegas, Thick GEM)(GEM, Micromegas, Thick GEM)

• RD51 Electronics (Scalable Readout Systems) RD51 Electronics (Scalable Readout Systems)

OUTLINE:OUTLINE:

• Pestov CountersPestov Counters

• Resistive Plate ChambersResistive Plate Chambers

• Micro-Pattern Gas DetectorsMicro-Pattern Gas Detectors(GEM, Micromegas, Thick GEM)(GEM, Micromegas, Thick GEM)

• RD51 Electronics (Scalable Readout Systems) RD51 Electronics (Scalable Readout Systems)

«The Factors that Limit Time Resolution in Photodetectors», «The Factors that Limit Time Resolution in Photodetectors», Timing Workshop, University of Chicago, April 28, 2011Timing Workshop, University of Chicago, April 28, 2011

GOOD TIME RESOLUTION ---> THIN GAPGOOD TIME RESOLUTION ---> THIN GAPGOOD EFFICIENCY---> THICK GAS LAYERGOOD EFFICIENCY---> THICK GAS LAYER

THIN GAP (100 µm) AND HIGH THIN GAP (100 µm) AND HIGH PRESSURES (~10 bar)PRESSURES (~10 bar)HIGH RESISTIVITY ELECTRODEHIGH RESISTIVITY ELECTRODE(PESTOV GLASS, 10(PESTOV GLASS, 1099 Ω cm Ω cm

Yu. Pestov, NIM 196(1982)45Yu. Pestov, NIM 196(1982)45

SIGNAL PICK-UP STRIPS

SEMI-CONDUCTING GLASS ANODE

METAL CATHODE

HIGH-PRESSURE GAS VESSEL

PHYSICAL ORIGIN OF TAILS IN THEPHYSICAL ORIGIN OF TAILS IN THE TIME RESPONSE OF SPARK COUNTERS:TIME RESPONSE OF SPARK COUNTERS:

Yu Pestov et al. NIMA265 (1988) 198Yu Pestov et al. NIMA265 (1988) 198Yu. Pestov et al., NIMA456 (2000) 11Yu. Pestov et al., NIMA456 (2000) 11Mangiarotti and A. Gobbi, NIMA. A482(2002)192Mangiarotti and A. Gobbi, NIMA. A482(2002)192

Time resolution is proportional to discharge delay timeTime resolution is proportional to discharge delay time (fluctuation of delay time is the(fluctuation of delay time is thesum of the fluctuation of the avalanche development and the occurrence of the streamer)sum of the fluctuation of the avalanche development and the occurrence of the streamer)

HIGH RESISTIVITY ELECTRODE (BAKELITE)

GAS GAP

GRAPHITE COATING

INSULATOR

READOUT STRIPS X

READOUT STRIPS Y

HV

GND

Time resolution of a RPC can be parameterized as:

Δτ = λ/v λ is the mean free path of electrons in avalanche, v is drift velocity of electrons

LOW λ and HIGH v can be obtained with dense/fast gas mixtures: C2H2F4 – iC4H10 – SF6

Typical values: λ ~ 10μm, v ~ 100 μm/ns → Δτ ~ 100ps

Only avalanches within a few hundred m from cathode generate signals

Raether limit: G = ed/λ < 108 → for λ ~ 10μm dgap ~ 200μm

To avoid discharges the gap must be reduced → MICROGAP

R. Santonico, NIMA 187(1981)37R. Santonico, NIMA 187(1981)37P. Fonte, NIMA449 (2000) 295 ;P. Fonte, NIMA449 (2000) 295 ;P.Fonte, A.Smirnitski, C Williams, NIMA443(2000)201 P.Fonte, A.Smirnitski, C Williams, NIMA443(2000)201 I.Crotty et al, NIM A337(1994)370 I.Crotty et al, NIM A337(1994)370

• INCREASING THE GAP PROVIDES BETTER EFFICIENCY PLATEAUXINCREASING THE GAP PROVIDES BETTER EFFICIENCY PLATEAUX

• For gas gaps of 0.3 mm or larger, the timing jitter in parallel-plate detectorsFor gas gaps of 0.3 mm or larger, the timing jitter in parallel-plate detectorsvaries almost linearly with the width of the gapsvaries almost linearly with the width of the gaps

HV GND

M. Abbrescia et al, NIM A431(1999)413M. Abbrescia et al, NIM A431(1999)413

SINGLE GAPFWHM 2.3 ns

DOUBLE GAPFWHM=1.7 ns

(caveat - table last updated in 2003)(caveat - table last updated in 2003)

Add boundaries that stop avalanche development. These boundaries must be Add boundaries that stop avalanche development. These boundaries must be invisible to the fast induced signal – induced signal on external pickupinvisible to the fast induced signal – induced signal on external pickup

C. Williams, RD51 Mini-Week, July 20, 2010C. Williams, RD51 Mini-Week, July 20, 2010

E. Cerron Zeballos et al, NIMA 374(1996)132E. Cerron Zeballos et al, NIMA 374(1996)132A.A. Akindinov et al, NIMA 456(2000)16Akindinov et al, NIMA 456(2000)16

HV

GND

FLOATING

C. Williams, RD51 Mini-Week, July 20, 2010C. Williams, RD51 Mini-Week, July 20, 2010

(After time correction using pulse-height)After time correction using pulse-height)

Would like large fast signal and small total charge (high rate capability)Would like large fast signal and small total charge (high rate capability)

2 mm Bakelite2 mm Bakelite

2 mm gas gap2 mm gas gap

cmcm

2 mm Bakelite2 mm Bakelite

X readout stripsX readout strips

Y readout Y readout stripsstrips

E ~ 50 kVE ~ 50 kV

Timing and Multi-Gap RPC Timing and Multi-Gap RPC ALICE TOF ALICE TOFP. Fonte, V. Peskov, C. Williams (~50 ps)P. Fonte, V. Peskov, C. Williams (~50 ps)

0.4 mm glass0.4 mm glass platesplates

0.3 mm gas0.3 mm gasgapsgaps

Pickup electrodesPickup electrodes

Pickup electrodesPickup electrodes

Trigger RPC: R. Cardarelli, R. SantonicoTrigger RPC: R. Cardarelli, R. Santonico ATLAS, CMS (~ 2000 – 4000 mATLAS, CMS (~ 2000 – 4000 m22)) timing resolution ~ 1-5 ns (MIPs)timing resolution ~ 1-5 ns (MIPs)

E ~ 100 kVE ~ 100 kV

`Renaissance of particle identification’`Renaissance of particle identification’using Multi-Gap RPC in ALICE:using Multi-Gap RPC in ALICE:

`Renaissance of particle identification’`Renaissance of particle identification’using Multi-Gap RPC in ALICE:using Multi-Gap RPC in ALICE:

C. Williams, RD51 Mini-Week, C. Williams, RD51 Mini-Week, July 20, 2010July 20, 2010

B

10 ps devices could be 10 ps devices could be feasible – one of the feasible – one of the biggest problem could biggest problem could be the electronics : be the electronics : the TDCthe TDC

• MicromegasMicromegas

• GEMGEM

• Thick-GEM, Hole-Type Detectors and RETGEMThick-GEM, Hole-Type Detectors and RETGEM

• MPDG with CMOS pixel ASICsMPDG with CMOS pixel ASICs

• Ingrid TechnologyIngrid Technology

ElectronsElectrons

IonsIons

60 %

40 %

MicromegasMicromegas GEMGEM THGEMTHGEM MHSPMHSP IngridIngrid

0.18 0.18 m CMOS VLSIm CMOS VLSI

CMOS high densityCMOS high densityreadout electronicsreadout electronics

11

Thin metal-coated polymer foil chemically pierced by a high density of holes Thin metal-coated polymer foil chemically pierced by a high density of holes

A difference of potentials of ~ 500V is A difference of potentials of ~ 500V is

applied between the two GEM electrodes.applied between the two GEM electrodes.

The primary electrons released by theThe primary electrons released by the

ionizing particle, drift towards the holesionizing particle, drift towards the holes

where the high electric field triggers the where the high electric field triggers the

electron multiplication process.electron multiplication process.

Electrons are collected on patterned readout board. Electrons are collected on patterned readout board.

A fast signal can be detected on the lower A fast signal can be detected on the lower GEM electrode for triggering or energy discrimination. GEM electrode for triggering or energy discrimination.

All readout electrodes are at ground potential.All readout electrodes are at ground potential.

S1 S2 S3 S4

Induction gapInduction gap

e-

e-

I+

F. Sauli, Nucl. Instrum. Methods A386(1997)531F. Sauli, Nucl. Instrum. Methods A386(1997)531F. Sauli, http://www.cern.ch/GDDF. Sauli, http://www.cern.ch/GDD

F. Sauli, NIM A386(1997) 531;F. Sauli, NIM A386(1997) 531;F. Sauli, http://www.cern.ch/GDDF. Sauli, http://www.cern.ch/GDD

Full decoupling of amplification stage (GEM)Full decoupling of amplification stage (GEM)and readout stage (PCB, anode)and readout stage (PCB, anode)

Cartesian Cartesian

Compass, LHCbCompass, LHCb

Small angleSmall angle

Hexaboard, Hexaboard, padspads

MICEMICE

MixedMixed

TotemTotemCompassCompass TotemTotem

33 cm

NA49-futureNA49-future

Amplification and readout structures can be optimized independently !Amplification and readout structures can be optimized independently !

CFCF44

770 torr770 torr

Single Photon Time Resolution:Single Photon Time Resolution:200 µm

FWHM ~160 µm Beam ~ 100 µm

Intrinsic accuracyIntrinsic accuracy (RMS)~ 55 µm

Intrinsic accuracyIntrinsic accuracy (RMS)~ 55 µm

Single Photon Position Accuracy:Single Photon Position Accuracy:

T. Meinschad et al, NIM A535 (2004) 324; T. Meinschad et al, NIM A535 (2004) 324; D.Mormann et al., NIMA504 (2003) 93D.Mormann et al., NIMA504 (2003) 93

Time-resolutionTime-resolution is determined by the is determined by the fluctuations in the photoelectron transit time fluctuations in the photoelectron transit time from their from their emission point at the PCemission point at the PC and, after multiplication, and, after multiplication, to the anode.to the anode. depends on the detector geometry, the electric field conditions and propertiesdepends on the detector geometry, the electric field conditions and propertiesof the gas composition, namely on the electron diffusion and drift velocity.of the gas composition, namely on the electron diffusion and drift velocity.

low diffusion &low diffusion &high electron drift high electron drift

velocity in CF4velocity in CF4

Induction gap ~ 1mmInduction gap ~ 1mm

A. Bressan et al, Nucl. Instr. and Meth. A425 (1999) 262

Triple GEM for LHC-b Detector : Triple GEM for LHC-b Detector : Time Resolution ~ 5 nsTime Resolution ~ 5 nsTriple GEM for CMS Upgrade:Triple GEM for CMS Upgrade:

G. Bencivenni, IEEE TNS 49(6), 3242 (2002)G. Bencivenni, IEEE TNS 49(6), 3242 (2002)

Time resolution for differentTime resolution for differentgas mixtures and gap configurations:gas mixtures and gap configurations:• Ar(45):COAr(45):CO2 2 (15):CF(15):CF4 4 (40) [gaps 3/1/2/1](40) [gaps 3/1/2/1]• Ar(70):COAr(70):CO22(30) [gaps 3/2/2/2](30) [gaps 3/2/2/2]

A. Sharma, private communicationsA. Sharma, private communications

1,0E-02

1,0E-01

1,0E+00

1,0E+01

1,0E+02

1,0E+03

1,0E+04

1,0E+05

1,0E+06

1,0E+07

0 200 400 600 800 1000V THGEM (V)

Gai

n

MM = 330 NeCF4 10%MM = 330 NeCF4 10%MM = 290 NeCF4 5%MM = 290 NeCF4 5%DTHGEM NeCF4 10%DTHGEM NeCF4 10%DTHGEM NeCF4 5%DTHGEM NeCF4 5%

STANDARD GEMSTANDARD GEM101033 GAIN IN SINGLE GEM GAIN IN SINGLE GEM

THGEMTHGEM101055 gain in single-THGEM gain in single-THGEM

1 mm1 mm

0.1 mm rim0.1 mm rimto preventto preventdischargesdischarges

Simple & Robust Simple & Robust Manufactured by standard PCB techniques Manufactured by standard PCB techniques of precise drilling in G-10 (and other materials) and Cu etchingof precise drilling in G-10 (and other materials) and Cu etching

Other groups developedOther groups developedsimilar hole-multipliers:similar hole-multipliers:

- Optimized GEM: Optimized GEM: L. Periale et al., L. Periale et al., NIM A478 (2002) 377.NIM A478 (2002) 377.

- LEM:LEM: P. Jeanneret, P. Jeanneret, - PhD thesis, 2001.PhD thesis, 2001.

C. Shalem et al, NIMA558 (2006) 475; C. Shalem et al, NIMA558 (2006) 475;

• Effective Effective single-electronsingle-electron detection detection (high gas gain (high gas gain ~10~1055 (>10 (>1066) @) @ single (doublesingle (double) THGEM)) THGEM)• Few-nsFew-ns RMS time resolution RMS time resolution• Sub-mmSub-mm position resolution position resolution• MHz/mmMHz/mm22 rate capabilityrate capability• Cryogenic operation: OKCryogenic operation: OK• GasGas: : molecular and noble gasesmolecular and noble gases• Pressure: Pressure: 1mbar - few bar1mbar - few bar

101066

C. Azevedo et al.; arXiv: 0909.3191C. Azevedo et al.; arXiv: 0909.3191

Double THGEM or THGEM/MicromegasDouble THGEM or THGEM/Micromegas

Signal shape is determined by the electron drift velocity and Signal shape is determined by the electron drift velocity and the width and field strength in the induction gap.the width and field strength in the induction gap.

• Smaller induction gap &Smaller induction gap &

• Higher electric field Higher electric field

Faster and narrower Faster and narrower signals signals

Electron drift time from THGEMElectron drift time from THGEMsurface into holes (simulation)surface into holes (simulation)

Single Single photonsphotons

Time Resolution with MIPs:Time Resolution with MIPs:

Variations in rise-time, shape and amplitudeVariations in rise-time, shape and amplitude(in addition to statistics of primary ionization)(in addition to statistics of primary ionization)

R. Alon et al., arXiv: 0809.4382R. Alon et al., arXiv: 0809.4382R. Alon, MsD 2007, Weinzmann InstituteR. Alon, MsD 2007, Weinzmann Institute

Y. Giomataris et al, NIM A376(1996)29Y. Giomataris et al, NIM A376(1996)29

Micromesh Gaseous Chamber: a Micromesh Gaseous Chamber: a micromesh supported by 50-100 micromesh supported by 50-100 mminsulating pillarsinsulating pillars Multiplication (up to 10Multiplication (up to 1055 or more) or more) takes place between the anode andtakes place between the anode andthe mesh and the charge is collectedthe mesh and the charge is collectedon the anode (one stage)on the anode (one stage)

Small gap: fast collection of ionsSmall gap: fast collection of ions

CsI coated meshCsI coated mesh

Single photon pulse height distribution (Polya)Single photon pulse height distribution (Polya)

icromegas Time Resolution :icromegas Time Resolution :~ 700 ps~ 700 psicromegas Time Resolution :icromegas Time Resolution :~ 700 ps~ 700 ps

Single Photon Time Resolution:Single Photon Time Resolution:

J. Derre et al., NIM A449 (2000) 314J. Derre et al., NIM A449 (2000) 314Physical time jittersPhysical time jitters for UV photons for UV photons electron diffusion in the gas and noise.electron diffusion in the gas and noise.

Excellent S/N performance:Excellent S/N performance:

A time resolution of ~1 ns results in space points with a A time resolution of ~1 ns results in space points with a resolution along the drift direction of ~50 μmresolution along the drift direction of ~50 μm

T. Alexopoulos et al, T. Alexopoulos et al, NIM A617 (2010) 161 NIM A617 (2010) 161

The time information for each channel The time information for each channel is extracted from the peak time of the is extracted from the peak time of the

ADC spectra. The strip with the earliest ADC spectra. The strip with the earliest arrival time is taken as reference.arrival time is taken as reference.

InGrid: integrate Micromegas & pixel chipInGrid: integrate Micromegas & pixel chipby Si-wafer post-processing technologyby Si-wafer post-processing technology• Grid robustness & Gap/Hole accuracy Grid robustness & Gap/Hole accuracy

0.8 µm Al grid0.8 µm Al grid

Pattern AlPattern Al

Development Development of SU8 of SU8

photoresistphotoresistUV ExposureUV Exposure

DepositDeposit50 50 µm SU(8)µm SU(8)

““Ingrid” + Silicon Protection Layer:Ingrid” + Silicon Protection Layer:

Apply Si3N4 (highApply Si3N4 (highresistivity layer 3-20 resistivity layer 3-20 m)m)

for discharge quenchfor discharge quench

& SPARK& SPARKPROTECTIONPROTECTION

before InGridbefore InGridproductionproduction

““InGrid” Detector:InGrid” Detector:

SiProt LayerSiProt Layer

M. Chefdeville et al, NIMA556(2006) 490M. Chefdeville et al, NIMA556(2006) 490

FeFe5555

sourcesource

Observe electrons (~220) from an Observe electrons (~220) from an X-ray (5.9 keV) conversion one by X-ray (5.9 keV) conversion one by

one and count them one and count them in micro-TPC (6 cm drift)in micro-TPC (6 cm drift)

Study single electron responseStudy single electron response

1.5 cm1.5 cm

P. Colas, RD51 Collab. Meet., P. Colas, RD51 Collab. Meet., Jun.16-17, 2009, WG2 MeetingJun.16-17, 2009, WG2 Meeting

Provoke discharges by introducing Provoke discharges by introducing small amount of Thorium in the Ar small amount of Thorium in the Ar gas gas - Thorium decays to Radon 222 - Thorium decays to Radon 222 which emits 2 alphas of 6.3 & 6.8 MeVwhich emits 2 alphas of 6.3 & 6.8 MeV

Round-shape images of dischargesRound-shape images of discharges

M. Fransen, RD51 Collab. Meet.,M. Fransen, RD51 Collab. Meet., Oct.13-15, 2008, WG2 MeetingOct.13-15, 2008, WG2 Meeting

Using

low n

oise

CM

OS

chip

s co

uld

lead

to

high

er S

/N ->

hel

p to

impr

ove

time

reso

lution

Using

low n

oise

CM

OS

chip

s co

uld

lead

to

high

er S

/N ->

hel

p to

impr

ove

time

reso

lution

22

Collaboration of ~75 institutes Collaboration of ~75 institutes worldwide, ~ 430 authorsworldwide, ~ 430 authors

RD51 Collaboration Meetings:RD51 Collaboration Meetings:11stst - Amsterdam April 16-18, 2008 : - Amsterdam April 16-18, 2008 : http://indico.cern.ch/conferenceDisplay.py?confId=2506922ndnd - Paris, October 13-15, 2008 : - Paris, October 13-15, 2008 : http://indico.cern.ch/conferenceDisplay.py?confId=3517233rdrd - Crete (Greece), June 12-16, 2009 : - Crete (Greece), June 12-16, 2009 : http://candia.inp.demokritos.gr/mpgd2009/http://candia.inp.demokritos.gr/mpgd2009/44thth – CERN, November 23-25, 2009 : http://indicobeta.cern.ch/conferenceDisplay.py?confId=72610 – CERN, November 23-25, 2009 : http://indicobeta.cern.ch/conferenceDisplay.py?confId=7261055thth – Freiburg, Germany, May 24-27, 2010 : http://indico.cern.ch/conferenceDisplay.py?confId=89325 – Freiburg, Germany, May 24-27, 2010 : http://indico.cern.ch/conferenceDisplay.py?confId=8932566thth – Bari (Italy), October 7-10, 2010: http://indico.cern.ch/conferenceDisplay.py?ovw=True&confId=102799 – Bari (Italy), October 7-10, 2010: http://indico.cern.ch/conferenceDisplay.py?ovw=True&confId=10279977thth –CERN, April 12-15, 2011: –CERN, April 12-15, 2011: https://indico.cern.ch/conferenceDisplay.py?confId=132080https://indico.cern.ch/conferenceDisplay.py?confId=132080

““RD51 aims at facilitating the RD51 aims at facilitating the development of development of advanced gas-avalanche detector technologies advanced gas-avalanche detector technologies and associated electronic-readout systems,and associated electronic-readout systems, for for

applications in basic and applied research.”applications in basic and applied research.”

http://rd51-public.web.cern.ch/RD51-Publichttp://rd51-public.web.cern.ch/RD51-Public

Freiburg , Germany, May 2010 Bari, Italy, October 2010

WG1:WG1: large area Micromegas, GEM; THGEM R&D; MM resistive anode readout (discharge large area Micromegas, GEM; THGEM R&D; MM resistive anode readout (discharge protection); design and detector assembly optimization; large area readout electrodes and protection); design and detector assembly optimization; large area readout electrodes and electronics interface electronics interface

WG2:WG2: double phase operation, radiation tolerance, discharge protection, rate effects, double phase operation, radiation tolerance, discharge protection, rate effects, single-electron response, avalanche fluctuations, photo detection with THGEM and GridPixsingle-electron response, avalanche fluctuations, photo detection with THGEM and GridPix

WG3:WG3: applications beyond HEP, industrial applications (X-ray diffraction, homeland security) applications beyond HEP, industrial applications (X-ray diffraction, homeland security)

WG4:WG4: development of the software tools; microtracking; neBEM field solver, development of the software tools; microtracking; neBEM field solver, electroluminescence simulation tool, Penning transfers, GEM charging up; MM electroluminescence simulation tool, Penning transfers, GEM charging up; MM transparency and signal, MM dischargestransparency and signal, MM discharges

WG5:WG5: MPGD Scalable Readout System (SRS);MPGD Scalable Readout System (SRS); Timepix multi-chip MPGD readout Timepix multi-chip MPGD readout

WG6:WG6: CERN MPGD Production Facility; industrialisation; TT Network CERN MPGD Production Facility; industrialisation; TT Network

WG7:WG7: RD51 test beam facility RD51 test beam facility 23

Consolidation around common projects:Consolidation around common projects: large area MPGD R&D, CERN/MPGDlarge area MPGD R&D, CERN/MPGD Production Facility, electronics developments, software tools, beam testsProduction Facility, electronics developments, software tools, beam tests

GEM

Development of a portable multi-channel readout system:Development of a portable multi-channel readout system:

• Scalable readout architecture: a few hundreds to several thousand channelsScalable readout architecture: a few hundreds to several thousand channels Suited for small test systems up to very large systems (> 100 k ch.)Suited for small test systems up to very large systems (> 100 k ch.)• Project specific part (ASIC) + common acquisition hardware and softwareProject specific part (ASIC) + common acquisition hardware and software

Readout Units

GBE switch

DAQ

10 GBE network

Clock&

Trigger

ethernet GB-ethernet MM fiber or copper

SRU SRU. . . .

Control

Data + Control

…

FECchip

s

DTC point-to-point links

FECchip

s

FECchip

s

FECchip

s

. . . .

TTCContro

lPC

Trigger, clock and

control

Sing

le m

ode

fiber

. . . .

fibers / CAT6 Clock & timing

LHC machine:Test systems:

(only for multi-SRU architectures)

Online/Offline

DATERoot-based offline

Analysis

GBE

cop

per

Chip link interface

FEC

Application specific chip-carriers

simultaneous data up 200Mbit/s per FEC

DETECTOR

Common

Specific

40x 40x

HLT

1000 BASE-SX up 500 m Multimode fiber (1 Gbit)10 GBASE-SR up 300 m Multimode fiber ( 10 Gbit)

• Scalability from small to large system Scalability from small to large system • Common interface for replacing the chip frontend Common interface for replacing the chip frontend • Integration of proven and commercial solutions for a minimum of developmentIntegration of proven and commercial solutions for a minimum of development• Default availability of a very robust and supported DAQ software package(DATE). Default availability of a very robust and supported DAQ software package(DATE).

FEC cardsFEC cardsVirtex-5 FPGA, Gb-Ethernet, Virtex-5 FPGA, Gb-Ethernet, DDR buffer, NIM and LVDS DDR buffer, NIM and LVDS pulse I/Opulse I/OHigh speed Interface High speed Interface connectors to frontend connectors to frontend adapter cardsadapter cards22 FECs V1.1 produced in 22 FECs V1.1 produced in 2010201016 FEC V1.3 ready for 16 FEC V1.3 ready for production (all users booked)production (all users booked)

ADC frontend adapter ADC frontend adapter for APV and Beetle chipsfor APV and Beetle chips

ADC plugs into FEC to make a 6U ADC plugs into FEC to make a 6U readoutreadout

unit for up to 2048 channels unit for up to 2048 channels 18 ADC V1.0 produced in 201018 ADC V1.0 produced in 201018 ADC V1.1 waiting for production 18 ADC V1.1 waiting for production

20112011

Frontend hybridsFrontend hybridsso far all based on APV25 chipso far all based on APV25 chipVersion 1 proto: 5 workingVersion 1 proto: 5 workingVersion 2 users: 11 Version 2 users: 11 Version 3 systems: 16 (CERN PCB + bonding Version 3 systems: 16 (CERN PCB + bonding workshops), 320 (ELTOS + Hybrid SA ) = ongoing workshops), 320 (ELTOS + Hybrid SA ) = ongoing

Industrial partners survey for the productionIndustrial partners survey for the production

For details please contact : For details please contact : hans.muller@cern.chhans.muller@cern.ch

Detector TechnologyDetector Technology Typical time Typical time resolution*resolution*

• Pestov CounterPestov Counter(High pressure,(High pressure,

streamer discharge mode)streamer discharge mode)

30-50 (ps)30-50 (ps)

• Resitsive PlateResitsive Plate

Chambers (RPC)Chambers (RPC)

• MultiGap RPCMultiGap RPC

~ 1-5 ns (MIPs)1-5 ns (MIPs)

~ 50 ps (MIPs)~ 50 ps (MIPs)

• Gas Electron Gas Electron MultiplierMultiplier

- UV photons- UV photons

- MIPs- MIPs

~ 1-2 ns~ 1-2 ns~ 5-10 ns~ 5-10 ns

• Micromesh Gaseous Micromesh Gaseous StructuresStructures

- UV photons- UV photons - MIPs - MIPs

~ 700 ps~ 700 ps~ 1-10 ns~ 1-10 ns

** Numbers should be considered only as approximateNumbers should be considered only as approximate