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5.5.1 Heat-sinking for diodes and thyristors

At low switching frequencies (

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5.4. A powerIGBT switches a 600 V, 25 A inductive load at 100 kHz with a 50 per cent on-time duty

cycle. Turn-on and turn-off both occur in 100 ns and the collector on-state voltage is to be 2 V.

Calculate the total power losses, Pd, of the switch.The switch has a thermal resistance Rj-hs = 0.05 K/W, and the water-cooled heatsink provides a thermal

resistance Rhs-w = 0.05 K/W. Calculate the operating junction temperature if the water for cooling is

maintained at 35C.

The 25 A steady state load current is stepped to 200 A. Calculate the surge power dissipation Ps, at 200

A, assuming transistor switching and on-state characteristics remain unchanged.

The junction temperature for a power surge during steady-state operation is given by case (d) in table 5.2.

With the aid of figure 5.8, determine the junction temperature at the end of a 0.1s, 200 A pulse. How long

is it before the junction temperature reaches Tjmax = 125C, with a collector current of 200 A?

(Assume Rc-hs=0).

[175 W, 52.5C, 1400 W, 112.6C, 0.5 s]

5.5 Rework example 5.4 finding the case temperature when the switching losses equal the on-state

loss.

5.6 A 20kHz, step-down, 340V dc chopper feeds an inductive load with an average current of 20A anda peak to peak ripple of 20A. Thus the mosfet switch on-state current rise from 10A to 30A while thefreewheel diode current falls from 30A to 10A when the switch is off. The mosfet on-state resistance is0.1 and has switch on and off times of 100ns and 200ns respectively. The switch duty cycle is 75% andit has a thermal resistance Rj-c of 0.4K/W and is mounted on a heatsink of thermal resistance Rc-a of0.6K/W in a maximum ambient temperature is 40C.Calculate:

i. switching losses, using equations 6.9 and 6.10ii. switch on-state lossesiii. mosfet junction operating temperature

[3.4W + 20.4W = 23.8W; Irms = 15.8A, 25W; Tj = 88.8C]

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