453-02384-0-CXA1685M
Transcript of 453-02384-0-CXA1685M
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High-Speed Transimpedance Amplifier
Description
CXA1685M is a low noise transimpedance
amplifier, particularly suitable for fiber-optic system.
CXA1685M is fabricated using high-speed bipolar
process.
Features
High transimpedance: Q 11.2k (Typ.)
Q 10.8k (Typ.)
Wide band width (3dB): Q 177MHz (Typ.)
Q 157MHz (Typ.)
Maximum input current: 1mA
Low noise: 1.7pA/ Hz (Typ.)
Applications
SONET/SDH: 155Mb/s
Fiber channel:133Mb/s
FDDI: 125Mb/s
Absolute Maximum Ratings
Supply voltage VCC VEE 0.3 to +7.0 V
Minimum input voltage VIN VEE V Input current IIN 1 to +1 mA
Output current
(Q/Q) (Continuous) IO 0 to 50 mA
(Surge) 0 to 100 mA
Storage temperature Tstg 65 to +150 C
Recommended Operating Conditions
DC power supply voltage
VCC VEE 4.75 to 5.46 V
Operating ambient temperatureTa 0 to +85 C
Structure
Bipolar silicon monolithic IC
1 E94X22A8Y
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
CXA1685M
8 pin SOP (Plastic)
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CXA1685M
Block Diagram and Pin Assignment
AC Electrical Characteristics (VCC = VCCA = GND, VEES = VEEDA = 5.46 to 4.75V, Ta = 0 to +85C)
Item Symbol Test Condition Min. Typ. Max. Unit.
Bandwidth(3dB)
Input Current Noise SpectralDensity (Mean value)
Q
Q
f3dBQ
f3dBQ1
In fN = 1kHZ to 156MHZ
113
109
177
157
1.7
MHZ
pA/ HZ
1 Assumes photodiode capacitance; CPD < 1.0pF, output load capacitance; Cout = 2.0pF,
output load resistor; Q: 620 to VEE, Q: 1.3k to VEE
45
7
8 1
2
36
ZT VCCAVCC
QIN
QC
VEEDAVEES
Electrical Characteristics
DC Electrical Characteristics (VCC = VCCA = GND, VEES = VEEDA = 5.46 to 4.75V, Ta = 0 to +85C)
Item Symbol Test Condition Min. Max.Typ. Unit
Supply current
Transimpedance
Max. Input Current before clipping
Max. Input Current
Bias votlage
IEE
ZTQ
ZTQ
IIN
IIN2
VIN
VQ
VQ
VC
CIN
input pin left open
Q
Q
IN
Q
Q
C
input pin left open
15.3
6.6
6.2
+40
+1000
10.0
11.2
10.8
VEE + 2.5
VEE + 1.7
VCC 2.4
VEE + 1.7
1.3
14.8
14.3
Ta = 25C
Input capacitance
mA
k
A
V
pF
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CXA1685M
Application Circuit
Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility forany problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.
Cautions for Handling
1. As the electronic breakdown level is weak, take care to handle.
2. The internal resistor of the output pin does not have the capability of drive (RL = 10k). The terminal
resistors must be connected. The resistance value is shown in application circuit.
VCCAVCC
IN
QC
VEEDAVEES
45
7
8 1
2
36
ZT
Q
VCC
VEE
1.0F
0.1F 0.1F
620 1.3k
PD
QQ
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Typical Performance
Typical frequency characteristics (VCC VEE = 5.0V, Ta = 25C)
Typical Output Wave forms (VCC VEE = 5.0V, Ta = 25C)
f3dB = 157MHzQ Output 5dB/div
0 500M 1.0G
65.9000ns 90.9000ns 115.900ns
VIN = 36dBm, fIN = 80MHz20mV/div
Q
Q
Duty Cycle Distortion vs Input Current
f3dB = 177MHzQ Output 5dB/div
0 500M 1.0G
Q Output fIN = 155Mbps55
50
45
40
35
300 200 400 600 800 1000
IIN [A]
QOutputDCD[%]
Q Output
IIN [A]
fIN = 155Mbps55
50
45
40
35
300 200 400 600 800 1000
QOutputDCD[%]
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VQ vs IIN
140
150
160
170
180
190
200
f3dBQ vs VEE
Ta = 40CTa = 25CTa = 85C
140
150
160
170
180
190
200
f3dBQ vs Ta
VCC VEE = 5.0VVCC VEE = 5.5V
140
150
160
170
180
190
200
f3dBQ vs Ta
VCC VEE = 4.7VVCC VEE = 5.0VVCC VEE = 5.5V
140
150
160
170
180
190
200
f3dBQ vs VCCVEE
Ta = 40CTa = 25CTa = 85C
f3dB[MHz]
f3dB[MHz]
VQ[
V]
4.5
1
1.5
2
2.5
3
3.5
4
VQ vs IIN
Ta = 85CTa = 25CTa = 40C
f3dB[MHz]
f3dB[MHz]
4.5
1
1.5
2
2.5
3
3.5
4
4.6
VEE [V]
5.6 5.4 5.2 5.0 4.8 100
Ta [C]
50 25 0 25 50 75
100
Ta [C]
50 25 0 25 50 754.6
VEE [V]
5.6 5.4 5.2 5.0 4.8
IIN [A]
0 20050 100 150 200
IIN [A]
0 50 100 150
Ta = 85CTa = 27CTa = 40C
VCC VEE = 4.7V
VQ[
V]
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100
100
4.610.2
8.8
10
9.8
9.6
9.4
9.2
9
IEE vs VEE
VEE [V]
5.6 5.4 5.2 5 4.8
Ta = 25C
VEE [V]
4
3
3.8
3.6
3.4
3.2
VQ vs VEE
5.6 5.4 5.2 5 4.8
Ta = 25C
4.6
IEE
[mA]
VQ[
V]
4.63
1.8
2.8
2.6
2.4
2
VQ vs VEE
VEE [V]
5.6 5.4 5.2 5 4.8
Ta = 25C
2.2
100
Ta [C]
VQ vs Ta
50 25 25 50 75
VEE = 5.0V
0
Ta [C]
10.2
8.8
10
9.8
9.6
9.4
9.2
9
IEE vs Ta
50 25 25 50 75
VEE = 5.0V
0
504
3
3.8
3.6
3.4
3.2
VQ vs Ta
Ta [C]
25 25 50 75
VEE = 5.0V
0
3
1.8
2.8
2.6
2.4
2
IEE
[mA]
2.2
VQ[
V]
VQ[V
]
VQ[V
]
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Test Circuit (Ta = 25C, VEE = 5.0V)
40dB
ATT 1001
2p
1.3k 2p
510.1
510.1
2p620
50
50
Signal Generator
Tracking Generator
Spectrum Analyzer/Oscilloscope
51
680p
VEE
VEE
VEE VEE
VEEVEE
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PACKAGE STRUCTURE
PACKAGE MATERIAL
LEAD TREATMENT
LEAD MATERIAL
PACKAGE MASS
EPOXY RESIN
SOLDER/PALLADIUM
42/COPPER ALLOY
0.1g
SOP-8P-L03
SOP008-P-0225
8PIN SOP (PLASTIC)
SONY CODE
EIAJ CODE
JEDEC CODE
0to 10
0.1 0.1+ 0.15
0.5
0.2
DETAILA
8 5
1 4
4.4
0.1
+0.3
1.27
1.25 0.15+ 0.4
6.4
0.4
A
5.0 0.1
+ 0.4
0.10
PLATING
M0.24b
B
(0.1
5)
0.1
5
0.0
5
(0.4)
b = 0.4 0.05
DETAIL B : SOLDER
0.1
5
0.0
1b = 0.4 0.03
DETAIL B : PALLADIUM
+0.0
3+ 0.1
+0.1
NOTE : PALLADIUM PLATINGThis product uses S-PdPPF (Sony Spec.-Palladium Pre-Plated Lead Frame).
Package Outline Unit: mm