4 Failure Analysis of Semiconductor Devices Failure Analysis of Semiconductor Devices T04007BE-4...

4 Failure Analysis of SemiconductorDevices

Contents

4.1 Importance of Failure Analysis 4- 1

4.2 Procedures for Failure Analysis 4- 1

4.2.1 Confirmation of information on failure 4- 4

4.2.2 External observation 4- 4

4.2.3 Confirmation of characteristic analysis/

failure mode 4- 4

4.2.4 Nondestructive analysis 4- 5

4.2.5 Unsealing 4- 7

4.2.6 Internal observation and measurement 4- 8

4.2.7 Search for failure locations 4-11

4.2.8 Processing technology for analyses 4-15

4.2.9 Surface microanalysis 4-17

i

4 Failure Analysis of Semiconductor Devices

T04007BE-4 2009.4 4-1

4. Failure Analysis of Semiconductor Devices

4.1 Importance of Failure AnalysisFailure analysis is the process of investigating semiconductor devices after failure by electric measurement,

and by physical and chemical analysis techniques if necessary, to confirm the reported failure and clarify the

failure mode or mechanism.

Progress of semiconductor devices has rapidly accelerated toward high integration, high density and high

functionality. In addition, use applications are widely penetrated into various civil and industrial fields.

Our company tries to consider high reliability through the design, development and manufacturing processes

of semiconductor devices with the goal of “zero failures” and to provide those products to customers.

However, it is impossible to eliminate all failures.

So, our company analyzes failures occurring during the manufacturing process, reliability test, mounting

process at the customer’s site and in the market (field), investigates the failure mechanism and cause thoroughly,

and feeds them back to each department in charge to prevent a failure from recurring.

4.2 Procedures for Failure AnalysisFigure 4.1 and Table 4.1 respectively show the procedures for failure analysis and an example of devices

to be used. When conducting failure analysis, it is recommended to adopt unified procedures, and it is

important to promote failure analysis so as to obtain information required to determine the failure mechanism.


T04007BE-4 2009.4 4-2

Figure 4.1 Procedures of failure analysis

Arising failure

Confirmation of failure information

External observation

Characteristic analysis

Nondestructive analysis

Unsealing

Confirmation of symptoms

Microscopic observation

Probe determination

Etching/lapping

Analysis result

Feedback

Detailed chemical physical analysis

SEM analysis

Baking

Source origin

Reliability testProcessBurn-inMarket

Product class nameManufacturing codeStatus of useSymptom of failure

Discoloration/deformationAttachment of foreign substancesCrack

Check according to product specificationsOperation according to application circuitsV-I between terminalsVibrationHeatingCoolingCondition change of characteristic operationDamaged circuit analysis

X-ray fluoroscopyUltrasonic flaw detection analysis

Mechanical unsealingChemical solutionPlasma etching

Probe static characteristic measurementProbe dynamic characteristic measurement

Microscopic observationPhotomicrographyCross-section photographVideo monitorLiquid crystal analysis

Secondary electron imageReflection electron imageVoltage contrast imageElectromotive force imageEB tester

EPMASIMSAES


T04007BE-4 2009.4 4-3

Table 4.1 Examples of main equipment used for failure analysis

Purpose

Stereoscopic microscopeMetallographic microscopeInfrared microscopeUltrasonic microscopeX-ray fluoroscopeUltrasonic flaw detection equipmentLiquid crystal analysis equipmentEmission microscopic analysis equipmentPhotographic projection equipmentScanning electron microscope (SEM)Transmission electron microscope (TEM)OBIC/OBIRCH equipment

Curve tracerTransistor tester/IC testerLSI tester/memory testerEB testerOscilloscopePulse oscillatorAmmeter/voltmeterNoise meterLaser testerCV meterLCR meterManipulatorSR tester

Electron probe micro analyzer (EPMA)X-ray fluorescence spectrometerAuger electron spectroscopy (AES)Ion micro analyzer (IMA)Electron beam diffraction analyzerX-ray diffraction analyzerElectron spectroscopy analyzer (ESCA)Infrared absorption spectrometerEmission spectrophotometerAtomic absorption spectrometerIon chromatography equipmentGas chromatography equipmentMass spectrometer

Cutting machine/Grinding equipmentSample packing devicePackage unsealing equipmentPlasma etcherDeposition equipmentDraft (discharge air/wastewater)Etching liquidClean benchUltrasonic disc cutterLaser cutterFIB

NanoSpec (trade name)EllipsometerTalystep (trade name)Tunneling microscope

Equipment

Observation

Electrical characteristic measurement

Elemental analysis

Sample preparation

Thickness/shape measurement


T04007BE-4 2009.4 4-4

4.2.1 Confirmation of information on failureWhen obtaining the device to be analyzed and to analyze the failure, it is necessary to confirm the following

items.

Product class name, manufacturer name, product specification, serial number (manufacturing time)

Delivery time, contents of receiving inspection, implementation time

Implemented device, implementation condition, circuit, device position in the circuit

Failure occurrence status (use environment, use conditions, period of use, failure occurrence time)

Failure mode (any of complete failure, gradual failure and intermittent failure; electric characteristic,

failure rate)

Route and period from failure occurrence to obtainment of failed products

By studying the above information well, the contents of failure and the failure mechanism can be estimated

to some extent and concrete procedures of later failure analyses can be determined.

The number of the failed devices is usually small and there are many cases with only one. Mistakes in

analysis procedures may lead to not only the destruction of samples but also an unknown cause of failure.

Before starting failure analyses, it is vital to gather and confirm information well. During analyses, it is

important to prepare non-defective products and carry on the analysis while comparing with them.

4.2.2 External observationThe failure analysis begins with observing the failed devices well and confirming the failure mode.

Stereoscopic microscopes (with 5 to 100 times power) are the most suitable for the external observation. Pay

attention to the appearance of encapsulation resin (discoloration, attachment of foreign substances, crack)

and the appearance of leads (plating, soldering, migration, whisker, fracture). If necessary, observe with

higher-power optical microscopes or scanning electron microscopes. If there is a foreign substance, identify

the element using the surface micro-analyzer described later. If the existence of a crack is suspected, detect the

position and the size using ultrasonic flaw detection equipment (SAT analysis).

4.2.3 Confirmation of characteristic analysis/failure modeAfter the external observation, confirm the failure mode. Check the operating conditions of circuits using

curve tracers, oscilloscopes or LSI testers or the like, and compare them with the characteristics of product

specifications and non-defective products. If the failure does not reappear, measure at high temperature or

after vibration tests. If the failure is not found, it may not be caused by the device itself, so it is necessary to

study the occurrence status again.


T04007BE-4 2009.4 4-5

4.2.4 Nondestructive analysisa) X-ray fluoroscopy

This is the method to observe the internal state nondestructively without unsealing the package of the device.

As the transmission rate of X-rays differs according to the quality of materials or the thickness, the internal

structure is obtained as a contrast image of the X-ray. Aluminum (Al), silicon (Si) and the like with light

atomic weight have a high transmission rate and are difficult to identify, but gold (Au), cupper (Cu), iron (Fe),

solder (Sn, Bi, Ag, Pd) and the like have a low transmission rate, so the state can be identified easily. The state

of bonding wires (wire breakage, short-circuit, wire flow), the state of die bond (spread/void), voids and the

like in the encapsulation resin can be confirmed (Figure 4.2 and Figure 4.3). Recently there is equipment

with small X-ray focus (1 μm to 10 μm) and it is applied to the analysis of compact packages such as CSP (chip

size package) or TCP (tape carrier package).

Figure 4.2 Case example of Figure 4.3 Case example of X-ray analysis of

X-ray analysis of wire flow short-circuit between CSP bumps

Places short-circuited by the attachment of foreign

Au bump


T04007BE-4 2009.4 4-6

b) Ultrasonic flaw detection analysis (SAT analysis)

Formerly, when analyzing the interfacial delamination between a package crack or Si chip or a die pad (lead

frame) and encapsulation resin, the method of cutting the package and grinding the cross section (destructive

analysis) was employed.

There are some problems in this method, such as inefficiency (working hours, number of processed

pieces), difficulty in positioning analysis places and the occurrence of troubles (delamination, crack). These

arise from the analysis being made by destroying the package.

On the other hand, SAT (scanning acoustic tomograph) is a method of analyzing using ultrasonic waves

without destroying the package.

The ultrasonic wave transmitting medium is partially reflected and partially transmissive if there is any

interface with a different medium (Snell’s law). If ultrasonic waves are projected from the surface of the package,

the ultrasonic waves transmit resin, reach the surface of Si chip and at the interface reflected waves and

transparent waves are generated (Figure 4.4).

Therefore, the defects and the structure inside the package can be analyzed two-dimensionally by receiving

the reflected waves moving (scanning) a lens tube (transducer) discharging ultrasonic waves and by performing

image processing (tone indication) of the characteristics (mainly the intensity of reflected wave) (Figure 4.5).

For example, if the delamination is generated at the interface between the resin and the silicon chip, almost

all the incident ultrasonic waves in the delamination (air layer) are reflected, so the reflected waves with high

intensity are received and the delamination can be detected. As the delamination and cracks generated in the

package are in a minute air layer, they can be also detected.

However, if the package surface is uneven, a black shadow may appear in a marking part as the ultrasonic

waves reflect diffusely on the uneven part.

SAT analyses are positioned as an analysis technology essential for semiconductor packages which will

become more and more important, including the reduction of the lead time for development, evaluation cost

reduction, analysis accuracy improvement, etc.

Resin Chip

Die pad

Reflected waveWater

(Transmitting wave) (Receiving wave)

Ultrasonic pulse

Delamination places

Inner lead

Chip

Place where a black shadow appears due to marking

Figure 4.4 Ultrasonic exploration Figure 4.5 Case example of analysis (delamination

principle on a white part at the corner of the chip surface)


T04007BE-4 2009.4 4-7

4.2.5 UnsealingThe purpose of unsealing is to expose the surface of the chip without damaging the surface of the silicon

chip, the wire and the lead frame and to make the later observation and measurement, but it is unexpectedly

difficult to unseal in a non-skilled method and firmly. During unsealing, it is important to select the method

in view of the types and the materials of packages. In case of ceramic encapsulation devices, the cover is

unsealed with a mechanical technique. Currently, mainstream plastic encapsulation devices are unsealed using

the following:

a) Encapsulation resin dissolution by chemicals

b) Encapsulation resin ashing by a plasma reactor

c) Mechanical unsealing

In addition, recently new types of packages such as CSP (chip size package) or TCP (tape carrier package)

are used, and various unsealing methods suitable for them are reported4.1).

a) Encapsulation resin dissolution by chemicals

Fuming nitric acid (70°C to 80°C) and sulfuric acid (200°C to 250°C) are used to dissolve epoxy group resin.

The URESOLVE (trade name) and the like are used to dissolve silicon group resin.

Though dissolution by chemicals can be done easily, it has the disadvantages that it requires much skill and

that the foreign substances on the surface of chips might be removed at the same time. In practical application,

samples useful for the later observation and measurement can be obtained if the wire and the lead are kept as

they are when the resin on the chip has been partially removed with a drill and dissolved until the whole

surface of the chip is exposed.

Unsealing using chemicals must be conducted in a draft as it is harmful and dangerous to human bodies.

Also, the waste disposal must be done in compliance with the law.

b) Encapsulation resin ashing by a plasma reactor

In this method, oxygen (O2) gas in a plasma state is reacted with encapsulation resin and removed. The

drawback of this method is that it takes a long time to process samples as the reaction rate is slow (approx.

50 μm/h), but its use has been gradually generalized as the state of the surface of the chip is well kept.

c) Mechanical unsealing

In this method, unsealing is conducted by cutting the resin with a mechanical force using metal scissors,

pincers, nippers, files, etc. The surface of the chip is exposed relatively easily by breaking the device when

it is taken out and put into a solder bath and thermal stress is applied to it. Though this method can be

conducted most easily, the drawback is the lack of certainty.


T04007BE-4 2009.4 4-8

4.2.6 Internal observation and measurementThe device, with the surface of the chip exposed by unsealing, is observed with a stereoscopic microscope

and then with an optical microscope. With the stereoscopic microscope, the state of chips (cracks, the

attachment of foreign substances), the state of die bonds, the state of wires and the state of leads are observed

carefully. It is important to change the lighting conditions by tilting the device in various directions. Then the

surface of the chip is observed with the optical microscope. Optical microscopes are essential to the observation

of the surface of chips as they have 1500 times power. As the surfaces of the chips differ in the thickness of

oxide films, etc., they are colored by interference. As the interference color depends on the film thickness,

abnormalities of the film thickness can be detected by comparing with non-defective products. The

abnormalities detected by internal observations are as follows:

Attachment of foreign substances

Pattern abnormalities

Abnormalities of the film thickness

Wire breakage, short-circuit

Corrosion of Al wire

Al migration

Cracks on passivation films

a) Optical microscopic observation

As optical microscopes have been used for a long time and there are a variety of different types, it is important

to select and use those most suitable, according to their features. Table 4.2 shows the types and the features

of optical microscopes.

Table 4.2 Types and features of optical microscopes often used for failure analysis

Types and attached functions of microscope

Stereoscopic microscope

x0.7

to

x160

Magnifying power

Features/applications

Metallographic microscope

Dark field

Differential interference

Polarization system

Infrared system

x25

to

x1500

Observe the bonding condition between the silicon ship and the die pad utilizing a high transmission property of infrared ray for silicon.

Abnormalities and defects on the surface can be detected coordinately by using two rotating polarized light filters.

Create a color coordinating the difference between the unevenness on the surface of samples by using a prism and polarized light.

Abnormalities on the surface can be detected by projecting light at a sharp angle to the surface of samples.

Microscopes used for the most varied purposes in the field of microelectronics. Usually used in the bright field and incidence. The following functions are included.

Used for macro observations such as low power, long operating distance, wide field, three-dimensional observation and packages


T04007BE-4 2009.4 4-9

Metallographic microscopes are the most widely used in the field of semiconductors for observation by

projecting light on the sample and magnifying the light reflected from the surface of the sample with a lens.

With dark-field microscopes, the unevenness on the surface is emphasized by projecting light diagonally on

the sample. In differential interference, the unevenness of the sample appears colored for emphasis. Polarization

systems are effective for observing the structure of transparent samples by using polarized light and are used

for observing in liquid crystal analysis to detect the position of leaks on chips. In infrared systems, the state

of die bonds under the silicon chips can be observed by using a high transmission property of infrared ray for

silicon.

b) SEM observation

SEMs (scanning electron microscopes) as well as optical microscopes are widely used for failure analyses.

With SEMs, the surface of the sample is observed by projecting electron beams on the sample and detecting

the secondary electron emitted from the sample, and the sample can be magnified from a few times to 100,000

times. As SEMs have a large focus depth and it is easy to obtain the observations of stereoscopic shapes, they

are used not only for failure analyses but also for acceptance inspections of materials or parts and for quality

control in the manufacturing process. Figure 4.6 shows observation example of the surface of the chip by SEM.

Figure 4.6 Case example of observation of SEM


T04007BE-4 2009.4 4-10

With SEMs, not only is the shape of the surface of the sample observed using the secondary electron,

but a wide variety of information can also be obtained by adding various kinds of observation equipment.

VC (voltage contrast) method

In this method, voltage is applied to the sample electrode and the distribution of potentials on the

surface of the chip is obtained. Though the materials of wires are the same, the contrasts differ according

to potentials, so potential maps can be obtained.

EBIC (electron beam induced current) method

This method utilizes the phenomenon that electric current flows when the electron beam is irradiated on

the p-n junction, and it is used for the determination of the position of the p-n junction or the diffusion

depth.

CL (cathode luminescence) method

This method utilizes the phenomenon that the electron excited by electron beams and the positive hole

emit light at the time of recombination, and it is used for the determination of defects inside chips,

precipitation and the length of carrier diffusion.

EPMA (electron probe micro analysis) method

This is the method of elemental analyses using characteristic X-rays emitted from the samples. The

details of this method are described in “4.2.9 Surface microanalysis”.

c) TEM observation

While SEMs are equipment by which electron beams are reflected on the surface of the sample, TEMs

(transmission electron microscopes) to make observations by transmitting electron rays are also effective.

TEMs have a resolution of approx. 0.1 nm to 0.2 nm and it is possible to magnify to the atomic level. So, they

are used to observe tiny precipitate and lattice defects in chips, but it is rather difficult to prepare the samples

because the sample thickness must be reduced to approx. 0.1 μm.


T04007BE-4 2009.4 4-11

4.2.7 Search for failure locationsRecent semiconductor devices may not be able to identify failure locations only by internal observations

because of the advanced miniaturization and high integration. To identify the failure locations is the most

important analysis to determine the failure mechanism. EB tester analysis, liquid crystal analysis or emission

microscope analysis, and wiring-part defect analysis using OBIRCH equipment are some of the methods to

search the failure locations, and each of them is effective. Each method is described below.

a) EB tester analysis

EB tester analysis is the method for detecting the operating waveform and the potential contrast image of

a device without contact by operating the semiconductor device with an LSI tester in SEM. An example of EB

tester analysis is shown in Figure 4.7.

Figure 4.7 Case example of EB tester analysis (wire breakage)

b) CAD navigation

This is a method to make identifying the region in large integrated circuits infinitely easier by linking design

layout data (electronic file) and the positional information of analysis equipment such as an EB tester.


T04007BE-4 2009.4 4-12

c) Liquid crystal analysis method

In case of leak current trouble in the device, the place of leak occurrence generates heat, so the temperature

of the place rises. A certain type of liquid crystal causes phase transition at near ordinary temperatures, and

becomes the transmission state of polarized light due to ups and downs of the transition point, so by using

this, the places of leak occurrence can be identified. Figure 4.8 shows a case example of liquid crystal analysis

methods.

Figure 4.8 Case example of liquid crystal analysis4.2)


T04007BE-4 2009.4 4-13

d) Emission microscopic analysis

Emission microscopes are equipment for detecting luminous phenomena occurring when voltage is applied

to the device. In case of leak current trouble in the device, the electric field is concentrated on the failure

locations and hot carrier is generated. Then the weak light emitted during recombination is detected by highly

sensitive detectors and observed as a luminescence image, and the luminous places (failure locations) are

identified. Figure 4.9 shows the case example.

Recently multilayer wiring structures have become the mainstream, with the high integration of semiconductor

devices. So, the luminous phenomena may not be detected from the surface of chips. Then, these days, the

luminous places may sometimes be identified by processing the device and using the emission microscope

from the back surface of chips. Figure 4.10 shows the case example.

Figure 4.9 Case example of emission Figure 4.10 Case example of emission

microscope analysis microscope analysis from back surface


T04007BE-4 2009.4 4-14

e) Wiring-part defect analysis using OBIRCH equipment

OBIRCH (optical beam induced resistance change) methods are the methods for detecting the change in the

current due to the temperature rise of wiring caused by laser beam irradiation on Al wiring4.3). The temperature

rise at the moment the laser is irradiated on the point with defects such as voids at the wiring part is bigger

than that during irradiation on the points without defects. Consequently, the resistance increase in defective

parts becomes large and the current decrease becomes large, too. This current change is detected by a highly

sensitive detector and the defective parts are identified. Figure 4.11 shows the case example.

Failure point

(a) Failure identified by OBIRCH (b) Cross section observation of failure part by SIM

Figure 4.11 Case example of analysis in OBIRCH method4.4)


T04007BE-4 2009.4 4-15

4.2.8 Processing technology for analysesa) Etching

In order to carry on analyses, it is necessary to remove a part of the sample device by dissolution. Table

4.3 shows the etching liquid usually used. During etching, it is necessary to select an etching liquid that does

not dissolve other substances but dissolves only the intended substances. For the measurement of film

thickness, there are optical methods such as ellipsometers, NanoSpec (trade name) and mechanical methods

using contact needles such as Talystep (trade name).

Table 4.3 Etching liquid usually used

Substance

SiO2

Same as above

HF

100 to

250nm/min

550nm/min

100nm/min

CVD at 800°C

10nm/min

180°C

150nm/min

0.5μm/min to

1μm/min

PSG

Si3N4

H3PO4

Polysilicon

Au

Etching liquid composition Remarks

4g

1g

40ml

:

:

:

KI

I2

H2O

1ml

2ml

:

:

HCl

H2O

1ml

26ml

33ml

:

:

:

HF

HNO2

CH3COOH

28ml

170ml

113g

:

:

:

HF

H2O

NH3

Al


T04007BE-4 2009.4 4-16

b) Cross-section grinding

In case of observing the cross section of the sample (cross section of chip, cross section of lead frame, cross

section of encapsulation resin), observe by embedding the sample in the resin and exposing the intended cross

section by grinding. In this case, it may be necessary to cut or form the sample to be suitable for embedding.

In each case, process in such a way that mechanical stress is not applied, and so that there is no alteration of

samples due to temperature rise. When selecting embedding resin, resin with the best adhesion to samples

must be selected. When grinding, change sanding sheets successively from those with large particle size to

those with small particle size, but be careful not to leave scars due to grinding on the sample. Figure 4.12 shows

a photograph of the cross section of the chip.

Figure 4.12 Cross section of chips by cross-section grinding

c) FIB processing

In order to observe the cross section of arbitrary places of miniaturized semiconductor devices, FIB (focused

ion beam) equipment with alternative etching functions and SIM functions exercise its power these days. In

FIB equipment, micro alternative etching can be realized by narrowing down a gallium ion (Ga+) beam to

approx. 0.1 μmm and irradiating it to the sample. The usage of this equipment enables cross-sectional observation

to advance dramatically. Figure 4.13 shows a photograph of the cross section processed by FIB equipment.

C u

Low- k

STI

55nmN iSi

C u

Low- k

STI

55nmN iSi

C u

Low- k

STI

55nmN iSi

C u

Low- k

STI

55nmN iSi

Figure 4.13 Cross-section view of chip by FIB processing4.5)


T04007BE-4 2009.4 4-17

4.2.9 Surface microanalysisIn analyzing failures, there may be some cases that require elemental analyses of trace substances. Recently,

surface microanalysis of solid substances has been developed significantly and samples of 1 μm3 can be analyzed

at a sensitivity of 100 ppm.

The principle of surface analysis is to identify elements by projecting electrons, ions, light, X-rays, etc. on

the sample and detecting electrons, ions, light, X-rays, etc. emitted from the sample. Table 4.4 shows a

synopsis of surface microanalysis technology.

a) EPMA (XMA) (electron probe micro analysis)

EPMAs are in the most widespread use for analysis, usually equipped with SEMs. Making observation with

SEM, the identification of elements on the spot and the measurements of the element distribution on the

surface of the sample can be made. In EPMAs, as specific characteristic X-rays are generated in the sample

elements in case of the incidence of electron rays on the sample, the elements are identified by dispersing

characteristic X-rays. Also, the abundance can be determined from X-ray intensity. There are WDX (wavelength

dispersion method) and EDX (energy dispersion method) detection methods of X-rays. Each method has its

positive features and both are widely used. Figure 4.14 shows measurement examples of the element

distribution of foreign substances by EPMA.

(a) SEM image in the wiring part (b) Measurement example of Al element in EPMA

Figure 4.14 Example of EPMA analysis of foreign substance in chip


T04007BE-4 2009.4 4-18

b) SIMS (secondary ion mass spectrometry)

In SIMS, argon (Ar), oxygen (O), etc. are irradiated on the sample and the elements are identified by mass

analysis of ions emitted from the sample by sputtering. There are many types of SIMS, using various

irradiation systems and detection systems, but the method that analyzes surfaces using fine ion beams is

called I(M)MA. I(M)MA can analyze all the elements. As its detection limit is approx. 1 ppm and it is highly

sensitive, it is used for the identification of foreign substances, the measurement of diffusion profile, etc.

c) AES (Auger electron spectroscopy)

In AES, elements are analyzed by incidence of low accelerated electrons and by dispersing Auger electrons

generated from the sample. As the depth resolution of this method is as shallow as 1 to 2 nm, it is very

effective for measuring the composition of 2 or 3 atomic layers on the surface of the sample. This method can

analyze all the elements except hydrogen (H) and helium (He). The sensitivity differs according to the

element, but it is approximately 0.1% of the atomic layer. It can measure the profiles of the depth directions

of foreign substances and thin films in conjunction with sputtering devices.

d) ESCA (XPS) (electron spectroscopy for chemical analysis)

ESCAs disperse photoectrons emitted from the sample by incidence of X-rays or ultraviolet rays to the

sample. As not only the identification of elements but also the chemical-bonding state can be seen, this

method can analyze the interface between semiconductors and insulating films.

e) XRFS (X-ray fluorescence spectroscopy)

XRFSs identify elements by incidence of X-rays to the sample and by dispersing X-rays emitted from the

sample. XRFSs are used for analyzing foreign substances, and for quantitative analyses of phosphorous (P)

of passivation films, etc.

These surface microanalysis technologies serve as very powerful tools for failure analyses because they

can make elemental analyses of micro regions of μm order at the sensitivity of approx. ppm. The handling of

the equipment and the interpretation of the results require high technology and experience.


T04007BE-4 2009.4 4-19

Tabl

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27 (1

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tron b

eam

ex

cita

tion

Nonra

dia

tive

stat

e in

the

unex

cite

d p

art

or

the

quic

k

reco

mbin

atio

n p

art

Def

ects

in s

emic

onduct

ors

, pre

cipit

ates

, im

puri

ty

segre

gat

ion, m

easu

rem

ent

of

carr

ier

dif

fusi

on l

ength

Ele

ctro

n

(10 k

eV t

o 4

0 k

eV)

Curr

ent

EB

ICE

lect

ron B

eam

Induce

d C

urr

ent

(Rad

ius)

1 μ

m t

o s

om

e μm

(Thic

knes

s) S

om

e μm

Dis

trib

utio

n of

ele

ctro

mot

ive

forc

e ef

fect

s of

met

al-s

emic

ondu

ctor

by

elec

tron

-hol

e of

ele

ctro

n be

am

exci

tati

on, o

r bo

th e

nds

of p

-n ju

ncti

on

Exis

tence

cen

teri

ng c

arri

er

reco

mbin

atio

n s

uch

as

cryst

al

def

ects

nea

r ju

nct

ions

Exi

sten

ce o

f di

sloc

atio

n pe

netr

atin

g p-

n ju

ncti

on, a

naly

sis

of d

egra

dati

on

of li

ght-

emit

ting

dev

ice,

m

easu

rem

ent o

f di

ffus

ion

leng

th

X-r

ay

(Som

e to

30 k

eV)

Ele

ctro

nE

DX

Ener

gy D

isper

sive

X-r

ay S

pec

trosc

opy

(Rad

ius)

>10 n

m

(i

n c

ase

of

usi

ng S

TE

M)

(Thi

ckne

ss)

0.3

μm t

o so

me

μm

(

Ene

rgy,

sub

stan

ce d

epen

denc

e)

Puls

e-hei

ght

anal

ysi

s of

irra

dia

ted X

-ray

ener

gy (

puls

e-hei

ght)

by s

emic

onduct

or

det

ecto

rs (

SS

D)

such

as

Si

(Li)

Ele

men

tal

com

posi

tion a

nal

ysi

s th

rough t

he

ener

gy d

istr

ibuti

on

of

X-r

ay i

nte

nsi

ty (

sensi

tivit

y o

f 0.1

% a

nd m

ore

)

Uti

liza

tion a

s a

mea

ns

of

EP

MA

Curr

ent

Lig

ht

EL

Ele

ctro

lum

ines

cence

PL

law

is

use

d i

n c

ase

of

spec

ial

anal

ysi

s.S

pec

troan

alysi

s of

the

light

emit

ted d

uri

ng r

ecom

bin

atio

n o

f a

few

car

rier

s fo

rwar

d b

ias

is

appli

ed t

o a

nd i

nje

cted

to

Ener

gy l

evel

and r

elat

ive

conce

ntr

atio

n c

ente

ring b

and

gap

, em

issi

on r

ecom

bin

atio

n

Deg

radat

ion a

nal

ysi

s of

light-

emit

ting d

evic

e, d

efec

ts i

n

pro

cess

intr

oduct

ion, im

puri

ty

eval

uat

ion

Ele

ctro

n(S

om

e to

50 k

eV)

Char

acte

rist

ic

X-r

ayE

PM

AE

lect

ron P

robe

Mic

ro

Anal

ysi

s

(Rad

ius)

>0.5

μm

(Thi

ckne

ss)

0.3

μm t

o so

me

μm

(E

ner

gy, su

bst

ance

dep

enden

ce)

Dis

per

sion b

y E

DX

or

WD

X o

f ch

arac

teri

stic

X-r

ays

gen

erat

ed

by e

lect

ron b

eam

irr

adia

tion

Ele

men

tal

com

posi

tion a

nal

ysi

s (a

bove

Na

wit

h E

DX

, ab

ove

boro

n (

B)

wit

h W

DX

)

Com

posi

tion a

nal

ysi

s on w

afer

an

d d

evic

e (u

ltra

thin

fil

m, not

appli

cable

), c

onta

min

atio

n,

det

ecti

on o

f at

tach

men

t

Ele

ctro

mag

net

ic

wav

e(t

o 1

0 M

Hz)

Ele

ctro

mag

net

icw

ave

EP

RE

lect

ron P

aram

agnet

ic

Res

onan

ce

ES

R i

n c

ase

of

par

amag

net

ic

sam

ple

sP

osi

tion o

f im

puri

ty i

n

sem

iconduct

or

bulk

cry

stal

, def

ecti

ve

stru

cture

ES

CA

Ele

ctro

n S

pec

trosc

opy

for

Chem

ical

Anal

ysi

s

Gen

eric

des

ignat

ion o

f X

PS

and

UP

SU

tili

zati

on o

f S

OR

(s

ynch

rotr

on o

rbit

al r

adia

tion)

is e

xpec

ted.

Ele

ctro

mag

net

ic

wav

e(t

o 1

0 M

Hz)

Ele

ctro

mag

net

icw

ave

ES

RE

lect

ron S

pin

Res

onan

ce

Mea

sure

men

t of

reso

nan

t ab

sorp

tion s

pec

trum

by t

ransi

tion

bet

wee

n Z

eem

an l

evel

s gen

erat

ed

pla

cing e

lect

ron s

pin

in t

he

mag

net

ic e

xte

rnal

fie

ld

Iden

tifi

cati

on o

f im

puri

ty i

on,

def

ecti

ve

stru

cture

, el

ectr

on s

pin

re

laxat

ion, el

ectr

on s

pin

in

tera

ctio

n

Iden

tifi

cati

on o

f def

ects

by

hydro

gen

(H

), e

tc. in

α-S

i


T04007BE-4 2009.4 4-20

Ele

ctri

cal

fiel

d

(to s

om

e doze

ns

of

keV

)N

eutr

al a

tom

FE

MF

ield

Em

issi

on

Mic

rosc

opy

(Rad

ius)

Som

e nm

(Thic

knes

s) M

onoa

tom

ic l

ayer

Hig

h e

lect

rica

l fi

eld i

s fo

rmed

at

the

end o

f nee

dle

-lik

e m

etal

, en

ergy m

ore

than

work

funct

ion

is o

bta

ined

and a

tom

is

radia

ted

to o

uts

ide

of

vac

uum

.

Rec

ord

of

emis

sion p

robab

ilit

y

on t

he

surf

ace

of

hig

h e

lect

rica

l fi

eld a

s a

figure

, su

rfac

e at

om

ic

stru

cture

, at

om

moti

on

Sem

iconduct

or

stru

cture

, su

rfac

e dif

fusi

on, an

alysi

s of

dep

th o

f fi

eld p

enet

rati

on

Ele

ctri

cal

fiel

d

(to s

om

e doze

ns

of

keV

)Io

niz

ed a

tom

FIM

Fie

ld I

on M

icro

scopy

(Rad

ius)

0. so

me

nm

to

so

me

nm

(Thic

knes

s) M

onoa

tom

ic l

ayer

Fie

ld e

vap

ora

tion i

on a

t th

e en

d

of

nee

dle

-lik

e m

etal

or

surf

ace

fiel

d d

istr

ibuti

on i

s co

nver

ted t

o

ioniz

atio

n r

ate

such

as

rare

gas

.

Rec

ord

of

ioniz

atio

n e

ner

gy

dis

trib

uti

on o

n t

he

surf

ace

of

hig

h e

lect

rica

l fi

eld a

s a

figure

Si

atom

ic s

truct

ure

(su

per

latt

ice

stru

cture

, et

c.),

ato

mic

str

uct

ure

of

com

pound s

emic

onduct

or

Ele

ctro

n

(0.5

MeV

and m

ore

)

Ele

ctro

n

(tra

nsm

issi

on/

dif

frac

tion)

HV

EM

Hig

h V

olt

age

Ele

ctro

nM

icro

scopy

(Rad

ius)

Som

e nm

Hig

h v

olt

age

TE

MT

EM

im

age

of

thic

k s

ample

Dynam

ic o

bse

rvat

ion o

f dis

loca

tion

IBS

Ion B

ack S

catt

erin

gS

ame

as R

BS

Ion (

Ar,

O, C

s, e

tc.)

(S

om

e keV

to

30 k

eV)

Sec

ondar

y i

on

IMM

AIo

n M

icro

pro

be

(Mas

s)A

nal

ysi

s

(Rad

ius)

1 μ

m t

o 2

μm

,

surf

ace

ioniz

atio

n t

ype

ion:

0.1

μm

(Thic

knes

s) S

om

e nm

to

10 n

m

Sputt

er-i

oniz

e su

rfac

e su

bst

ance

s w

ith p

rim

ary i

on, an

alyze

wit

h

mas

s an

alyze

r, m

icro

bea

m

scan

nin

g m

ethod a

nd i

mag

e co

nver

sion m

ethod.

One-

dim

ensi

onal

ele

men

tal

com

posi

tion a

nal

ysi

s, d

epth

dir

ecti

on c

om

posi

tion a

nal

ysi

s (c

om

posi

tion s

ensi

tivit

y p

pb t

o p

pm

, la

rger

dep

enden

ce o

n e

lem

ents

)

Com

posi

tion a

nal

ysi

s of

mult

ilay

er e

pit

axia

l la

yer

, im

puri

ty d

iffu

sion, re

sidual

im

puri

ty a

nal

ysi

s

Photo

n

(Infr

ared

ray

s 2.5

μm

to 1

6 μ

m)

Photo

n

(tra

nsm

issi

on)

IRIn

frar

ed A

bso

rpti

on

Spec

trosc

opy

(Wav

e num

ber

) >

0.1

cm

-1C

han

ge

the

num

ber

of

freq

uen

cy

(wav

elen

gth

) of

infr

ared

ray

s an

d

irra

dia

te, m

easu

re t

he

abso

rpti

on

spec

trum

by m

ole

cula

r vib

rati

on.

Iden

tifi

cati

on o

f su

bst

ance

s fr

om

ab

sorp

tion b

and p

eculi

ar t

o

mole

cule

or

anal

ysi

s of

mole

cule

st

ruct

ure

Mea

sure

men

t of

conce

ntr

atio

n

of

oxygen

(O

) an

d c

arbon (

C)

in s

ilic

on

Ele

ctro

n

(15 k

eV t

o 5

00 k

eV)

Ele

ctro

n

(dif

frac

tion)

LE

ED

Low

Ener

gy E

lect

ron

Dif

frac

tion

(Thic

knes

s) S

om

e at

om

ic

la

yer

Ver

tica

l in

ciden

ce o

f lo

w-s

pee

d

elec

tron b

eam

on t

he

surf

ace

of

the

sam

ple

, im

age

form

atio

n o

f re

flec

tive

dif

frac

tion p

atte

rn o

n

hem

ispher

e fl

uore

scen

t sc

reen

Surf

ace

cryst

al s

truct

ure

, ab

sorp

tion s

tate

, su

rfac

e at

om

re

arra

ngem

ent,

etc

. (s

uper

per

iodic

lat

tice

str

uct

ure

)

Thin

fil

m c

ryst

al s

truct

ure

, se

mic

onduct

or

surf

ace

abso

rpti

on l

ayer

Ele

ctro

n

(≤ s

om

e hundre

ds

of

eV)

Ele

ctro

nL

EE

LS

Low

Ener

gy E

lect

ron

Loss

Spec

trosc

opy

Inci

denc

e of

low

-spe

ed e

lect

ron

beam

on

the

surf

ace

of t

he s

ampl

e,

mea

sure

men

t of

ene

rgy

dist

ribu

tion

of

ref

lect

ion

elec

tron

by

appl

ying

AC

to

ele

ctro

n gu

n ac

cele

rati

ng v

olta

ge

Surf

ace

elec

tronic

sta

te o

f si

ngle

cr

yst

al (

ban

d s

truct

ure

)E

lect

ronic

str

uct

ure

of

sem

iconduct

or

clea

n s

urf

ace,

im

puri

ty a

bso

rpti

on s

urf

ace

stru

cture

Ele

ctro

mag

net

icw

ave

Ele

ctro

mag

net

icw

ave

NM

RN

ucl

ear

Mag

net

ic

Res

onan

ce

Mea

sure

men

t of

reso

nan

t ab

sorp

tion s

pec

trum

by t

ransi

tion

bet

wee

n Z

eem

an l

evel

s gen

erat

ed

by p

laci

ng n

ucl

ear

spin

in t

he

mag

net

ic e

xte

rnal

fie

ld

Nucl

ear

inte

rnal

fie

ld,

iden

tifi

cati

on o

f nucl

ide

from

nucl

ear

spin

rel

axat

ion, at

om

ic

arra

ngem

ent

of

subst

ance

s

Anal

ysi

s of

hydro

gen

(H

) an

d

fluori

ne

(F)

in α

-sil

icon

Abbre

via

-ti

on

Input

Det

ecti

on

Pri

nci

ple

or

Met

hod

Obta

inab

le I

nfo

rmat

ion

Appli

cati

on

Res

olu

tion

Nam

e


T04007BE-4 2009.4 4-21

Lig

ht

Lig

ht

PL

Photo

lum

ines

cence

(Rad

ius)

Som

e μm

T

he

dep

th d

epen

ds

on

opti

cal-

abso

rpti

on l

ength

.

Spec

troan

alysi

s of

the

light

emit

ted d

uri

ng r

ecom

bin

atio

n o

f el

ectr

ons

exci

ted b

y i

rrad

iati

on

of

light

such

as

lase

r

Ener

gy l

evel

and r

elat

ive

conce

ntr

atio

n c

ente

ring b

and

gap

and e

mis

sion r

ecom

bin

atio

n

Eval

uat

ion o

f cr

yst

al g

row

th,

anal

ysi

s of

def

ects

in p

roce

ss

intr

oduct

ion s

uch

as

ion

impla

nta

tion, id

enti

fica

tion o

f im

puri

ties

H+, H

e+ i

on

(S

om

e hundre

ds

of

eV t

o s

om

e M

eV)

Sca

tter

ed i

on

RB

SR

uth

erfo

rd B

ack

Sca

tter

ing

(Rad

ius)

5 n

m t

o 2

0 n

m (T

he

hea

vie

r el

emen

t,

th

e sm

alle

r)

Bac

kw

ard a

nel

asti

city

(R

uth

erfo

rd),

est

imat

ion o

f en

ergy d

isper

sion a

nd q

uan

tity

of

scat

tere

d i

on

Rea

rran

gem

ent

of

surf

ace

const

ruct

ion a

tom

s, i

nte

rsti

tial

si

te o

f im

puri

ty a

tom

usi

ng

chan

nel

ing p

hen

om

ena,

ex

iste

nce

of

def

ects

Waf

er s

urf

ace

rear

rangem

ent,

at

om

ic s

ite

of

impuri

ty

dif

fusi

on, st

ruct

ura

l an

alysi

s of

thin

fil

ms

(SiO

2/S

i, e

tc.)

Ele

ctro

n(3

keV

to 2

0 k

eV)

Auger

ele

ctro

nS

AM

Sca

nnin

g A

uger

M

icro

scopy

(Rad

ius)

≥ 5

0 n

m(T

hic

knes

s) 0

. so

me

nm

to

2 n

m

AE

S s

cannin

g m

icro

ele

ctro

n

bea

m (

SE

M t

ype:

≤ 2

0 n

m,

CM

A t

ype:

to 1

00 n

m)

Thre

e-dim

ensi

onal

ele

men

tal

com

posi

tion a

nal

ysi

s of

surf

ace

thin

fil

ms,

rat

her

dif

ficu

lt

anal

ysi

s of

chem

ical

shif

t

Loca

l co

mposi

tion a

nal

ysi

s of

the

surf

ace

of

waf

er, dev

ice,

anal

ysi

s of

var

ious

conta

min

atio

n,

oxid

atio

n, re

acti

on l

ayer

SA

ES

Sca

nnin

g A

uger

E

lect

ron

Spec

trosc

opy

Sam

e as

SA

M

Ele

ctro

n(5

keV

to 5

0 k

eV)

Sec

ondar

y

elec

tron

Ref

lect

ion

elec

tron

SE

MS

cannin

g E

lect

ron

Mic

rosc

opy

(Rad

ius)

> 3

nm

Sca

n m

icro

ele

ctro

n b

eam

and

reco

rd t

he

inte

nsi

ty o

f se

condar

y

elec

tron (

SE

) an

d r

efle

ctio

n

elec

tron (

BE

) in

synch

roniz

atio

n

wit

h p

rim

ary b

eam

sca

nnin

g.

Unev

en s

urf

ace

shap

e,

qual

itat

ive

com

posi

tion a

nal

ysi

sV

ario

us

mat

eria

ls, su

rfac

e sh

apes

of

dev

ices

, le

ngth

m

easu

rem

ent

stan

dar

ds,

etc

. ca

n

be

reco

rded

sim

ult

aneo

usl

y.

Ion (

Ar,

O)

(S

om

e hundre

ds

of

eV t

o 1

0 k

eV)

Sec

ondar

y i

on

SIM

SS

econdar

y I

on M

ass

Spec

trom

etry

(Rad

ius)

100 μ

m t

o 5

00 μ

m(T

hic

knes

s) M

onoat

om

ic

la

yer

to s

om

e at

om

ic l

ayer

Sputt

er-i

oniz

e su

rfac

e su

bst

ance

s w

ith p

rim

ary i

on a

nd

anal

yze

wit

h m

ass

anal

yze

r.

Pri

mar

y i

on i

s not

scan

ned

.

Ele

men

tal

com

posi

tion a

nal

ysi

s of

surf

ace

subst

ance

s (s

econdar

y

dis

trib

uti

on n

ot

appli

cable

), b

ut

hig

her

sen

siti

vit

y t

han

I(M

)MA

Com

posi

tion a

nal

ysi

s of

surf

ace

monoat

om

ic l

ayer

, su

rfac

e ab

sorp

tion, co

nta

min

ated

im

puri

ty a

nal

ysi

s, i

mpuri

ty

anal

ysi

s of

ion-i

mpla

nte

d l

ayer

Volt

age

Curr

ent

SR

Spre

adin

g R

esis

tance

(Wid

th-T

hic

knes

s) S

om

e μm

Det

ect

the

flow

ing c

urr

ent

when

fo

rwar

d v

olt

age

is a

ppli

ed t

o m

etal

pro

be

conta

cted

wit

h t

he

surf

ace

of

sem

iconduct

or,

and o

bta

in s

pec

ific

re

sist

ance

. T

wo-p

robe

met

hod

Spec

ific

res

ista

nce

Res

isti

vit

y m

easu

rem

ent

of

bulk

, ep

itax

ial

waf

er

Ele

ctro

n

(Som

e doze

ns

to

200 k

eV)

Ele

ctro

n

(tra

nsm

issi

on/

dif

frac

tion)

Sec

onda

ry e

lect

ron

ST

EM

Sca

nnin

g T

ransm

issi

on

Ele

ctro

n M

icro

scopy

(Rad

ius)

to 1

nm

(Thic

knes

s) S

om

e nm

TE

M i

ncl

udin

g t

he

mec

han

ism

ab

le t

o s

can p

rim

ary i

rrad

iati

on

bea

m

SE

M m

ode

imag

e by s

econdar

y

elec

tron a

ppli

cable

, m

ost

able

to

add E

EL

S, et

c.

Usa

ble

as

AE

M

Ga+

ion

(5 k

eV t

o 3

0 k

eV)

Sec

ondar

y

elec

tron

SIM

Sca

nnin

g I

on

Mic

rosc

opy

(Rad

ius)

>10 n

mS

can m

icro

ion b

eam

and r

ecord

th

e in

tensi

ty o

f se

condar

y

elec

tron (

SE

) in

synch

roniz

atio

n

wit

h p

rim

ary b

eam

sca

nnin

g.

Unev

en s

urf

ace

shap

e, m

ater

ial

dif

fere

nce

, gra

in s

ize

or

dir

ecti

on d

iffe

rence

.

Surf

ace

thin

lay

er s

hap

e of

var

ious

mat

eria

ls a

nd d

evic

e (D

epth

to 4

0 n

m),

gra

in s

tatu

s.

Abbre

via

-ti

on

Input

Det

ecti

on

Pri

nci

ple

or

Met

hod

Obta

inab

le I

nfo

rmat

ion

Appli

cati

on

Res

olu

tion

Nam

e


T04007BE-4 2009.4 4-22

Ele

ctro

n

(Som

e keV

to

30 k

eV)

Sec

ondar

y

elec

tron

Str

obo-

SE

MS

trobosc

opic

SE

M

(Rad

ius)

> 3

nm

Usi

ng t

he

dep

enden

ce o

f em

itte

d

seco

ndar

y e

lect

ron d

ose

on

surf

ace

pote

nti

al o

f su

bst

ance

s,

mea

sure

pote

nti

al d

istr

ibuti

on b

y

phas

e sy

nch

roniz

atio

n w

ith

puls

ed i

rrad

iati

on b

eam

.

Car

rier

flo

w i

n e

lect

ronic

cir

cuit

, et

c., pote

nti

al c

han

ge,

sig

nal

pro

pag

atio

n r

ate,

etc

.

Pote

nti

al c

han

ge

in t

he

unit

of

ps

in I

C c

ircu

it, oper

atin

g

anal

ysi

s

Ele

ctro

n

(30 k

eV t

o 2

00 k

eV)

Ele

ctro

n

(tra

nsm

issi

on/

dif

frac

tion)

TE

MT

ransm

issi

on E

lect

ron

Mic

rosc

opy

(Rad

ius)

to 0

. so

me

nm

(Thic

knes

s) t

o 5

nm

(S

tere

ogra

phic

im

age)

Dif

frac

tion b

y p

rim

ary t

her

mal

el

ectr

on o

r fi

eld-e

mis

sion

elec

tron, or

reco

rd o

f tr

ansm

issi

on

mag

nif

ied i

mag

e, a

lso c

alle

d C

EM

Cry

stal

cro

ss-s

ecti

on s

hap

e,

cryst

al s

truct

ure

anal

ysi

s by

dif

frac

tion, ex

iste

nce

of

def

ects

, et

c.

Cry

stal

def

ects

in

sem

iconduct

or

mat

eria

ls

(dis

loca

tion, pre

cipit

ates

, et

c.),

cr

yst

al s

truct

ure

anal

ysi

s

Photo

n

(Ult

ravio

let

ray,

4 e

V t

o 4

0 e

V)

Photo

elec

tron

UP

SU

ltra

vio

let

Photo

-em

issi

on

Spec

trosc

opy

(Thic

knes

s) M

onoa

tom

ic l

ayer

Ener

gy d

isper

sion o

f photo

elec

tron (

val

ence

ele

ctro

n,

conduct

ion e

lect

ron)

of

ult

ravio

let

exci

ted w

avel

ength

, m

easu

rem

ent

of

elec

tronic

en

ergy o

f sh

allo

w l

evel

s

Ele

men

tal

com

posi

tion a

nal

ysi

s of

surf

ace

subst

ance

s, e

lect

ronic

su

rfac

e le

vel

, es

tim

atio

n o

f dis

soci

atio

n o

r non-d

isso

ciat

ion,

chem

ical

-bondin

g s

tate

Surf

ace

trea

tmen

t st

ate,

in

tera

ctio

n o

f tr

ansi

tion m

etal

an

d a

bso

rbed

ele

ctro

n,

inte

rfac

ial

reac

tion l

ayer

st

ruct

ure

X-r

ay

(Som

e to

som

e doze

ns

of

keV

)

X-r

ay

(dif

frac

tion)

WD

XW

avel

ength

Dis

per

sive

X-r

ay S

pec

trosc

opy

(Rad

ius)

Som

e μm

(Thic

knes

s) 0

.3 μ

m t

o

so

me

μm

(E

ner

gy, su

bst

ance

dep

enden

ce)

Dis

per

se w

avel

ength

of

irra

dia

tion X

-ray

by B

ragg

refl

ecti

on b

y d

isper

sive

cryst

al

and m

easu

re t

he

inte

nsi

ty b

y

photo

elec

tric

conver

sion.

Ele

men

tal

com

posi

tion a

nal

ysi

s th

rough w

avel

ength

dis

trib

uti

on

of

X-r

ay i

nte

nsi

ty (

sensi

tivit

y:

0.0

1%

and m

ore

)

Use

d a

s a

mea

ns

of

EP

MA

X-r

ayX

-ray

(d

iffr

acti

on)

XD

X-r

ay D

iffr

acto

met

ry

(T

hic

knes

s) 0

.1 t

o s

om

e doze

ns

of

μmR

ecord

dif

frac

tion X

-ray

pat

tern

or

inte

nsi

ty b

y B

ragg r

efle

ctio

n

on c

ryst

al l

atti

ce s

urf

ace.

Cry

stal

str

uct

ure

anal

ysi

s, d

etec

tion

of

dir

ecti

ons,

photo

gra

phic

m

ethod, ch

art m

ethod (

single

cr

yst

al, pow

der

, et

c.)

Cry

stal

linit

y, def

ect

(tw

in

cryst

al, et

c.)

eval

uat

ion

XM

AX

-ray

Mic

ropro

be

Anal

ysi

s

Sam

e as

EP

MA

X-r

ay

(Som

e keV

to

10 k

eV)

Photo

elec

tron

XP

SX

-ray

Photo

-em

issi

on

Spec

trosc

opy

(Thic

knes

s) 1

nm

to s

om

e nm

Ener

gy d

isper

sion o

f X

-ray

(u

sual

ly A

lK r

ay, M

gk r

ay, et

c.)

exci

ted p

hoto

elec

tron (

core

el

ectr

on)

Wit

h t

he

shif

t of

atom

ic o

rbit

al

ener

gy i

n c

hem

ical

-bondin

g

stat

e, d

etec

t ch

emic

al s

hif

t es

pec

iall

y i

n l

ight

elem

ents

.

Ele

men

tal

com

posi

tion, ban

d

stru

cture

of

cryst

al, m

easu

rem

ent

of

bondin

g s

tate

, an

alysi

s of

inte

rfac

e bet

wee

n s

emic

onduct

or

and i

nsu

lati

ng f

ilm

X-r

ay, R

I ra

dia

tion s

ourc

e (1

0 k

eV t

o 1

00 k

eV)

Char

acte

rist

ic

X-r

ay

(flu

ore

scen

ce)

XR

FS

X-r

ay F

luore

scen

ceS

pec

trosc

opy

(Thic

knes

s) 0

.1 μ

m t

o

so

me

μmS

pec

troan

alysi

s by E

DX

or

WD

X

of

seco

ndar

y (

fluore

scen

t) X

-ray

Ele

men

tal

com

posi

tion a

nal

ysi

s (a

bove

N),

dif

ficu

lt f

or

bel

ow

Ni

in t

wo-c

ryst

al m

ethod

Anal

ysi

s of

surf

ace

atta

ched

su

bst

ance

s

X-r

ay

(Som

e keV

to

30 k

eV)

X-r

ay

(dif

frac

tion)

XR

TX

-ray

Topogra

phy

(Rad

ius)

to 5

μm

(Thic

knes

s) t

o 1

0 μ

m

(S

ecti

on t

opogra

ph)

Par

alle

l sc

annin

g o

f dis

per

sion

X-r

ay b

eam

toget

her

wit

h t

he

sam

ple

, re

cord

of

dif

frac

tion i

mag

e co

rres

pondin

g t

o s

ingle

cry

stal

Cry

stal

def

ect

(dis

loca

tion),

pre

cipit

ates

, im

agin

g o

f im

puri

ty

conce

ntr

atio

n s

trip

e on

photo

gra

ph o

r T

V s

cree

n

Def

ect

dis

trib

uti

on i

n w

afer

s (b

ulk

, dev

ice

pro

cess

, dis

tort

ed

dis

trib

uti

on, et

c.)

Abbre

via

-ti

on

Input

Det

ecti

on

Pri

nci

ple

or

Met

hod

Obta

inab

le I

nfo

rmat

ion

Appli

cati

on

Res

olu

tion

Nam

e


T04007BE-4 2009.4 4-23

Reference documents:

4.1) Matsushita, Matsushima, and Wada, “Basic Reliability of CSP and Consideration of Failure

Analysis Technique”, The 26th Union of Japanese Scientists and Engineers, pp. 99-104 (1996).

4.2) Kataoka and Wada, “Higher Accuracy of Liquid Crystal Analysis Technique”, The 26th Union of

Japanese Scientists and Engineers, pp. 113-118 (1995).

4.3) Nikawa and Inoue, “Failure Analysis Technique of LSI Using Laser Beam Radiation”, The 25th

Union of Japanese Scientists and Engineers, pp. 29-36 (1995).

4.4) Nakano and Wada, “Al Void Growth in W Via Hole by Stress Migration”, The 44th Japan Society

of Applied Physics, 29a-pc-20 p. 758 (1997).

4.5) Fujii et al., “65 nm Process Technology”, Matsushita Technical Journal Vol. 52, No. 1, p. 13 (2006).

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