3D Stacked Memory Patent Landscape Analysis
1
3D STACKED MEMORY 04 02 © LexInnova 2015 www.lex-innova.com 02 03 01 The worldwide 3D IC market is expected to develop from US$2.21 billion in 2011 to US$6.55 billion in 2015 at a CAGR of 16.9% from 2011 to 2015. 0 2017 2016 2015 2014 2013 2012 2011 2010 50 10% 9% 8% 7% 6% 5% 4% 3% 2% 1% 0% 100 150 200 250 300 350 400 450 500 Total 3D TSV devices(B$) 3D TSV Penetration rate Market value(BS) 3D TSV Penetration rate(%) Total semi value(B$) excluding 2.50 interposer substrate value SanDisk 793 Matrix Semiconductor 36 AMD 31 Unity Semiconductor 30 Hitachi 29 III HOLDINGS LLC 24 HP 24 Sharp Corp 19 Micron Technology 219 Samsung 194 Macronix 95 Intel Corp 90 Guobiao Zhang 57 Toshiba 47 IBM 39 Contact Formation+ Structural Features Assembly/Packing+ Structural Features Device Formation Structural Features Stacking+ Structural Features Interconnects Formation+ Structural Feature Other_FEOL+Structural Feature Water Development+ Structural Features Testing+ Structural Features Other-BEOL +Model Parameters Lithography+ Structural Features Other_BEOL+ Structural Features Etching+ Structural Features Stacking+ Model Parameters Contact Formation + Operating Speed Contact Formation + Model Parameters 3D Stacked Memory is an integrated circuit manufactured by stacking silicon wafers and interconnecting them vertically using through-silicon vias (TSVs). These stacked wafers behave as a single device and achieve higher performance at reduced power as compared to conventional two-dimensional devices. SanDisk, Micron, and Samsung are the top three assignees in terms of patent holdings. The number of patents /patent applications owned by top the three assignees comprise around 52% of the total patents/patent applications filed in the domain. Guobiao Zhang, an individual inventor has filed 57patents/patent applications. MERGERS AND ACQUISITIONS Intel and its partner company, Micron, announced a 3D NAND solution that enables chips with 384Gbits (48GBs) of capacity which is three times that of existing 3D NAND chips. AMD has reported that it would be mutually working with memory device manufacturer SK Hynix in the development of cutting edge, high-bandwidth, 3D stacked memory items and arrangements. Market Projections TOP ASSIGNEES LICENSING HEAT MAP Model parameters & Operating Speed related to Contact Formation (FEOL) and Structural Features related to Assembly/ Packaging are red in color which reflects a very distributed portfolio with no monopoly of any assignee in these domains, hence have higher chances of licensing activity. While on the other hand, domains like Stacking and Etching combined with the structural features fall in the lighter shades reflecting that the patent portfolio in these domains is predominantly held by some top players. Sandisk, Samsung and Micron are the prominent assignees in most of the technology domains.
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Transcript of 3D Stacked Memory Patent Landscape Analysis
3D STACKED MEMORY
04
02
© LexInnova 2015 www.lex-innova.com
02
03
01
The worldwide 3D IC market is expected to develop from US$2.21 billionin 2011 to US$6.55 billion in 2015 at a CAGR of 16.9% from 2011 to 2015.
020172016201520142013201220112010
50
10%
9%
8%
7%
6%
5%
4%
3%
2%
1%
0%
100
150
200
250
300
350
400
450
500
Total 3D TSV devices(B$) 3D TSV Penetration rate
Mar
ket v
alue
(BS)
3D T
SV P
enet
ratio
n ra
te(%
)
Total semi value(B$)
excluding 2.50 interposer substrate value
SanDisk793
MatrixSemiconductor
36
AMD31
UnitySemiconductor
30
Hitachi29
III HOLDINGS LLC24
HP24
Sharp Corp19
MicronTechnology
219Samsung
194 Macronix95
Intel Corp90
Guobiao Zhang57
Toshiba47
IBM39
Con
tact
For
mat
ion+
Stru
ctur
al F
eatu
res
Ass
embl
y/Pa
ckin
g+St
ruct
ural
Fea
ture
s
Dev
ice
Form
atio
nSt
ruct
ural
Fea
ture
s
Stac
king
+St
ruct
ural
Fea
ture
s InterconnectsFormation+Structural Feature
Other_FEOL+StructuralFeature
WaterDevelopment+StructuralFeatures
Testing+StructuralFeatures
Other-BEOL+Model
ParametersLithography+StructuralFeatures
Other_BEOL+Structural Features
Etching+Structural Features
Stacking+ModelParameters
Contact Formation + Operating Speed
Contact Formation+ Model Parameters
3D Stacked Memory is an integrated circuit manufactured by stacking silicon wafers and interconnecting them vertically using through-silicon vias (TSVs). These stacked wafers behave as a single device and achieve higher performance at reduced power as compared to conventional two-dimensional devices.
SanDisk, Micron, and Samsung are the top threeassignees in terms of patent holdings. The number of patents/patent applications owned by top the three assignees comprise around 52% of the total patents/patent applicationsfiled in the domain. Guobiao Zhang, an individual inventor has filed 57patents/patent applications.
MERGERS AND ACQUISITIONS
Intel and its partner company, Micron, announced a 3D NAND solution that enables chips with 384Gbits (48GBs) of capacity which is three times that of existing 3D NAND chips.
AMD has reported that it would be mutually working with memory device manufacturer SK Hynix in the development of cutting edge, high-bandwidth, 3D stacked memory items and arrangements.
Market Projections
TOP ASSIGNEES
LICENSING HEAT MAP
Model parameters & Operating Speed related to Contact Formation (FEOL) and Structural Features related to Assembly/Packaging are red in color which reflects a very distributed portfolio with no monopoly of any assignee in these domains, hence have higher chances of licensing activity. While on the other hand, domains like Stacking and Etching combined with the structural features fall in the lighter shades reflecting that the patent portfolio in these domains is predominantly held by some top players. Sandisk, Samsung and Micron are the prominent assignees in most of the technology domains.
