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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS )

2SK4013Switching Regulator Applications

Low drain-source ON resistance: R DS (ON) = 1.35 (typ.) High forward transfer admittance: |Y fs | = 5.0 S (typ.) Low leakage current: I DSS = 100 A (max) (V DS = 640 V) Enhancement-model: V th = 2.0 to 4.0 V (V DS = 10 V, I D = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristics Symbol Rating Unit

Drain-source voltage V DSS 800 V

Drain-gate voltage (R GS = 20 k ) VDGR 800 V

Gate-source voltage V GSS 30 V

DC (Note 1) I D 6Drain current

Pulse (Note 1) I DP 18A

Drain power dissipation (Tc = 25C) P D 45 W

Single pulse avalanche energy(Note 2) EAR 317 mJ

Avalanche current I AR 6 A

Repetitive avalanche energy (Note 3) E AR 4.5 mJ

Channel temperature T ch 150 C

Storage temperature range T stg 55 to 150 C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriatereliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept andMethods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to case R th (ch-c) 2.78 C/W

Thermal resistance, channel to ambient R th (ch-a) 62.5 C/W

Note 1: Please use devices on condition that the channel temperature is below 150C.

Note 2: V DD = 90 V, T ch = 25C (initial), L = 14.5 mH, R G = 25 , IAR = 6 A

Note 3: Repetitive rating; pulse width limited by maximum channel temperature.

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

JEDEC

JEITA SC-67

TOSHIBA 2-10U1B

Weight: 1.7 g (typ.)

1: Gate2: Drain3: Source

1

3

2

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Electrical Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I GSS VGS = 25 V, V DS = 0 V 10 A

Drain-source breakdown voltage V (BR) GSS IG = 10 A, VDS = 0 V 30 V

Drain cut-OFF current I DSS VDS = 640 V, V GS = 0 V 100 ADrain-source breakdown voltage V (BR) DSS ID = 10 mA, V GS = 0 V 800 V

Gate threshold voltage V th VDS = 10 V, I D = 1 mA 2.0 4.0 V

Drain-source ON resistance R DS (ON) VGS = 10 V, I D = 3 A 1.35 1.7

Forward transfer admittance Yfs VDS = 20 V, I D = 3 A 2.5 5.0 S

Input capacitance C iss 1400

Reverse transfer capacitance C rss 30

Output capacitance C oss

VDS = 25 V, V GS = 0 V, f = 1 MHz

130 pF

Rise time t r 25

Turn-ON time t on 80

Fall time t f 65 Switching time

Turn-OFF time t off 220

ns

Total gate charge(gate-source plus gate-drain) Qg 45

Gate-source charge Q gs 25

Gate-drain (miller) charge Qgd

VDD 400 V, V GS = 10 V, I D = 6 A

20

nC

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current (Note 1) IDR 6 A

Pulse drain reverse current (Note 1) I DRP 18 A

Forward voltage (diode) V DSF IDR = 6 A, V GS = 0 V 1.7 V

Reverse recovery time t rr 1100 ns

Reverse recovery charge Q rr

IDR = 6 A, V GS = 0 V,

dIDR /dt = 100 A/ s 10 C

Marking

Duty 1%, t w = 10 s

0 V

10 VV

GS

RL= 133

VDD 400 V

ID = 3 A VOUT

5 0

Lot No.

Note 4

K4013 Part No. (or abbreviation code)

Note 4: A line under a Lot No. identifies the indication of productLabels.Not underlined: [[Pb]]/INCLUDES > MCVUnderlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as toenvironmental matters such as the RoHS compatibility of Product.The RoHS is the Directive 2002/95/EC of the European Parliamentand of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

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Common sourceTa=25

Pulse test

0

1

2

3

4

5

0 2 4 6 8 10

VGS=4.5V

5.25

5

5.5

6Common sourc eTc 25C

Pulse test

8,10

ID VDS

5.25

5.5

5

0.1

1

10

100

0.1 1 10 100

Common sourceVDS=20V

Pulse test

Ta=100

-5525

0

4

8

12

16

0 2 4 6 8 10

Common sourceVDS=20V

Pulse test

Ta=100

25

-55

0

2

4

6

8

10

0 10 20 30 40 50

Commonsource

Ta=25Pulsetest

VGS=4.5V

5.25

5

5.5

8,10

5.75

6

0.10

1.00

10.00

0.01 0.1 1 10

Common sourceVGS=10VTc=25

Pulse test

ID VDS ID VDS

ID VGS VDS VGS

Yfs ID RDS (ON) ID

DRAINSOURCE VOLTAGE V DS (V) DRAINSOURCE VOLTAGE V DS (V)

GATE SOURCE VOLTAGE V GS (V) GATE SOURCE VOLTAGE V GS (V)

DRAIN CURRENT I D (A) DRAIN CURRENT I D (A)

D R A I N C U R R E N T

I D

( A )

D R A I N C U R R E N T

I D

( A )

D R A I N

S O U R C E V O L T A G E

V D S

( V )

D R A I N C U R R E N T

I D

( A )

D R A I N

S O U R C E O N R E S I S T A N C E

R D S ( O N )

( )

F O R W A R D T R A N S F E R A D M I T T A N C E

Y f s

( S )

COMMON SOURCETc = 25CPULSE TEST

40 208 12 160

2

6

4

6

3

ID = 1.5 A

10

8

COMMON SOURCETc = 25CPULSE TEST

Tc = 100C

Tc = 100C

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10

100

1000

10000

0.1 1 10 100

Ciss

Coss

CrssCommon sourceVGS=0Vf=1MHzTc=25

0.1

1

10

-1.2-1-0.8-0.6-0.4-0.20

Common sourceTc=25

Pulse test

VGS=0 -1V

1

3

10

0

1

2

3

4

5

-80 -40 0 40 80 120 160

Common sourceVDS=10VID=1mA

Pulse test

0

1

2

3

4

5

-80 -40 0 40 80 120 160

Common sourceVGS=10V

Pulse test

ID=1.5A

7

3

RDS (ON) Tc I DR VDS

C V DS Vth Tc

DYNAMIC INPUT/OUTPUTCHARACTERISTICS

CASE TEMPERATURE Tc (C) DRAIN SOURCE VOLTAGE V DS (V)

DRAINSOURCE VOLTAGE V DS (V) CASE TEMPERATURE Tc (C)

TOTAL GATE CHARGE Q g (nC)

D R A I N R E V E R S E C U R R E N T

I D R

( A )

D R A I N

S O U R C E O N R E S I S T A N C E

R D S ( O N )

( )

G A T E T H R E S H O L D V O L T A G E

V t h

( V )

C A P A C I T A N C E

C

( p F )

D R A I N

S O U R C E V O L T A G E

V D S

( V )

G A T E

S O U R C E V O L T A G E

V G S

( V )

P D - Tc

0

20

40

60

0 40 80 120 160

CASE TEMPERATURE Tc ( )

D R A I N P O W E R D I S S I P A T I O N P

D

( W )

6

450

300

00

15

10

0

VDS = 400 V

200

VGS

VDS

40 60 80 10020

100

150 5

Common sourceID = 6 ATc = 25CPulse test

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0.01

10

0.1

1

10

100 1 10 100 1 10

T

P DM

t

Duty = t/TRth (ch-c) = 2.78C/W

Duty=0.5

0.2

0.1

0.05

0.02

0.01

0.001

r th t w

PULSE WIDTH t w (s)

N O R M A L I Z E D T R A N S I E N T T H E R M A L

I M P E D A N C E

r t h ( t ) /

R t h ( c h - c )

Duty=0.5

SINGLE PULSE

E AS - Tch

0

50

100

150

200

250

300

350

400

25 50 75 100 125 150CHANNEL TEMPERATURE (INITIAL) T cH ()

A V A L A N C H E E N E R G Y E A S ( m J )

15 V

15 V

TEST CIRCUIT WAVE FORM

IAR

BVDSS

VDD VDS

RG = 25 VDD = 90 V, L = 14.5 mH

=VDDBVDSS

BVDSS2IL21

AS

A V A L A N C H E E N E R G Y

E A S

( m J )

CHANNEL TEMPERATURE (INITIAL) T ch (C) DRAINSOURCE VOLTAGE V DS

SAFE OPERATING AREA

D R A I N C U R R E N T

I D

( A )

1

1

10

100

10 100001000

ID max (PULSE) *

ID max (CONTINUOUS) *

DC OPERATIONTc = 25C

100 s *

1 ms *

VDSS max

0.01

0.1

100

* : SINGLE NONPETITIVE PULSE

Tc = 25C

Curves must be derated linearly with

increase in temperature

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This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even withTOSHIBAs written permission, reproduction is permissible only if reproduction is without alteration/omission.

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