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Power F-MOS FETs

unit: mm

2SK3049Silicon N-Channel Power F-MOS FET

s Features

qAvalanche energy capacity guaranteedqHigh-speed switching

qLow ON-resistance

qNo secondary breakdown

s ApplicationsqContactless relay

qDiving circuit for a solenoid

qDriving circuit for a motor

qControl equipment

qSwitching power supply

s Electrical Characteristics (TC = 25C)

Parameter

Drain to Source cut-off current

Gate to Source leakage current

Drain to Source breakdown voltage

Gate threshold voltage

Drain to Source ON-resistance

Forward transfer admittance

Diode forward voltage

Input capacitance (Common Source)

Output capacitance (Common Source)

Reverse transfer capacitance (Common Source)

Turn-on time (delay time)

Rise time

Turn-off time (delay time)

Symbol

IDSS

IGSS

VDSS

Vth

RDS(on)

| Yfs |

VDSF

Ciss

Coss

Crss

td(on)

tr

td(off)

Conditions

VDS = 480V, VGS = 0

VGS = 30V, VDS = 0

ID = 1mA, VGS = 0

VDS = 25V, ID = 1mA

VGS = 10V, ID = 3A

VDS = 25V, ID = 3A

IDR = 5A, VGS = 0

VDS = 20V, VGS = 0, f = 1MHz

VDD = 200V, ID = 3A

VGS = 10V, RL = 66.6

min

600

2

1.7

typ

0.85

3.4

1200

140

40

20

30

150

max

100

1

5

1.5

1.6

Unit

A

A

V

V

S

V

pF

pF

pF

ns

ns

ns

s Absolute Maximum Ratings (TC = 25C)

Parameter

Drain to Source breakdown voltage

Gate to Source voltage

Drain current

Avalanche energy capacity

Allowable power

dissipation

Channel temperature

Storage temperature

DC

Pulse

TC = 25C

Ta = 25C

Symbol

VDSS

VGSS

ID

IDP

EAS*

PD

Tch

Tstg

Ratings

600

30

5

10

62.5

40

2

150

55 to +150

Unit

V

V

A

A

mJ

W

C

C

* L = 5mH, IL = 5A, 1 pulse

1

9.90.3

15.0

0.5

13.70.24

.20.2

4.60.2

2.90.2

0.80.1

1.40.2

2 3

3.20.1

2.60.1

0.550.15

2.540.3

5.080.5

3.0

0.5

1.60.2

1: Gate

2: Drain

3: Source

TO-220D Package

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Power F-MOS FETs 2SK3049

Area of safe operation (ASO) PDTa IAS L-load

IDVGS RDS(on)ID | Yfs | ID

Rth(t)t

1 10 100 10003 30 3000.01

0.03

0.1

0.3

1

3

10

30

100Non repetitive pulse

TC=25C

DC

t=1ms

10ms

100ms

Drain to source voltage VDS (V)

DraincurrentID

(A)

0 16040 12080 14020 100600

60

50

40

30

20

10

(1) TC=Ta(2) Without heat sink

(1)

(2)

Ambient temperature Ta (C)

Allowablepowerdissipation

PD

(W)

104 10103 101102 1 103102 104102

101

1

10

102

(1) Without heat sink(2) With a 100 100 2mm Al heat sink

(1)

(2)

Time t (s)

Thermalresistance

Rth

(t)

(C/W)

0.1 10.3 3 100.01

10

1

0.1

0.03

0.3

362.5mJ

IAS max.TC=25C

L-load (mH)

AvalanchecurrentIAS

(A)

0 1082 640

10

8

6

4

2

VDS=25V

TC=100C

25C0C

Gate to source voltage VGS (V)

Draincurrent

ID

(A)

0 2 4 6 80

0.5

1.0

1.5

2.0

2.5

TC=100C

25C

0C

VGS=10V

Drain current ID (A)

Draintos

ourceON-resistance

RDS(on)

()

0 2 4 6 80

1

2

3

4

5

25C

TC=0C

100C

VDS=25V

Drain current ID (A)

Forwar

dtransferadmittance

|Yfs

|

(S)

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