2SC5388

5
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Triple Diffused Planar Silicon Transistor High-Voltage Switching Applications Ordering number:ENN6283 2SC5388 SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 10700TS (KOTO) TA-1738 No.6283–1/4 Specifications Absolute Maximum Ratings at Ta = 25˚C Package Dimensions unit:mm 2039D [2SC5388] Features · High speed (Adoption of MBIT process). · High breakdown voltage (V CBO =1500V). · High reliability (Adoption of HVP process). · On-chip damper diode. ˚C ˚C Electrical Characteristics at Ta = 25˚C 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Tc=25˚C Continued on next page. 16.0 2.0 2.8 1.0 4.0 21.0 5.0 8.0 22.0 20.4 5.6 3.1 2.0 2.0 0.6 5.45 5.45 1 2 3 3.5 3.4 r e t e m a r a P l o b m y S s n o i t i d n o C s g n i t a R t i n U e g a t l o V e s a B - o t - r o t c e l l o C V O B C 0 0 5 1 V e g a t l o V r e t t i m E - o t - r o t c e l l o C V O E C 0 0 7 V e g a t l o V e s a B - o t - r e t t i m E V O B E 5 V t n e r r u C r o t c e l l o C I C 5 A ) e s l u P ( t n e r r u C r o t c e l l o C I P C 0 1 A t n e r r u C e s a B I B 1 A n o i t a p i s s i D r o t c e l l o C P C 0 . 3 W 0 5 W e r u t a r e p m e T n o i t c n u J j T 0 5 1 e r u t a r e p m e T e g a r o t S g t s T 0 5 1 + o t 5 5 r e t e m a r a P l o b m y S s n o i t i d n o C s g n i t a R t i n U n i m p y t x a m t n e r r u C f f o t u C r o t c e l l o C I O B C V B C I , V 0 0 7 = E 0 = 1 . 0 A m t n e r r u C f f o t u C r e t t i m E I O B E V B E I , V 5 = C 0 = 0 0 6 A m n i a G t n e r r u C C D h E F 1 V E C I , V 5 = C A 1 = 0 0 1 0 3 2 h E F 2 V E C I , V 5 = C A 5 = 0 5 0 5 1

Transcript of 2SC5388

Page 1: 2SC5388

Any and all SANYO products described or contained herein do not have specifications that can handleapplications that require extremely high levels of reliability, such as life-support systems, aircraft’scontrol systems, or other applications whose failure can be reasonably expected to result in seriousphysical and/or material damage. Consult with your SANYO representative nearest you before usingany SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or otherparameters) listed in products specifications of any and all SANYO products described or containedherein.

NPN Triple Diffused Planar Silicon Transistor

High-Voltage Switching Applications

Ordering number:ENN6283

2SC5388

SANYO Electric Co.,Ltd. Semiconductor CompanyTOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

10700TS (KOTO) TA-1738 No.6283–1/4

SpecificationsAbsolute Maximum Ratings at Ta = 25˚C

Package Dimensionsunit:mm

2039D

[2SC5388]

Features · High speed (Adoption of MBIT process). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · On-chip damper diode.

˚C

˚C

Electrical Characteristics at Ta = 25˚C

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-3PML

Tc=25˚C

Continued on next page.

16.0

2.02.8

1.0

4.0

21.0

5.0

8.0

22.0

20.4

5.63.1

2.0

2.0

0.6

5.455.45

1 2 3

3.5

3.4

retemaraP lobmyS snoitidnoC sgnitaR tinU

egatloVesaB-ot-rotcelloC V OBC 0051 V

egatloVrettimE-ot-rotcelloC V OEC 007 V

egatloVesaB-ot-rettimE V OBE 5 V

tnerruCrotcelloC IC 5 A

)esluP(tnerruCrotcelloC I PC 01 A

tnerruCesaB IB 1 A

noitapissiDrotcelloC PC0.3 W

05 W

erutarepmeTnoitcnuJ jT 051

erutarepmeTegarotS gtsT 051+ot55–

retemaraP lobmyS snoitidnoCsgnitaR

tinUnim pyt xam

tnerruCffotuCrotcelloC I OBC V BC I,V007= E 0= 1.0 Am

tnerruCffotuCrettimE I OBE V BE I,V5= C 0= 006 Am

niaGtnerruCCDh EF 1 V EC I,V5= C A1= 001 032

h EF 2 V EC I,V5= C A5= 05 051

Page 2: 2SC5388

2SC5388

No.6283–2/4

Switching Time Test Circuit

PW=20µs

100µF 470µF

D.C.≤1%

50Ω

VBE=--5VVCC=200V

INPUT

OUTPUT

T.U.T

+ +

IB1

RB

R1 R2

RLVR

IB2

Continued from preceding page.

5.0

4.5

3.0

4.0

3.5

2.0

2.5

1.0

1.5

0.5

00 2 4 6 8 101 3 5 7 9

IC -- VCE

10mA

5mA

20mA

30mA40mA

100m

A

IB=0

IT00791

Ta=120°C

25°C

--40°C

10

1000

100

75

3

2

75

3

2

75

3

2

1.032 5 100.1 7 32 5 71.0

hFE -- ICVCE=5V

IT00793

Ta=1

20°C

25°C

--40°

C

VCE=5V10

8

9

7

6

5

4

3

2

1

00 0.2 0.4 0.6 0.8 1.41.0 1.2 1.6 1.8 2.42.0 2.2

IC -- VBE

IT00792

10

2

3

5

7

2

3

5

7

0.1

1.0

0.1 2 3 5 7 2 3 5 71.0 10

VCE(sat) -- IC

Ta=--40°C

25°C

120°C

IT00794

IC / IB=20

90mA80mA70mA60mA50mA

Col

lect

or C

urre

nt,I

C–

A

Col

lect

or C

urre

nt,I

C–

A

Collector-to-Emitter Voltage, VCE – V Base-to-Emitter Voltage, VBE – V

DC

Cur

rent

Gai

n,h F

E

Collector Current, IC – A Collector Current, IC – A

Col

lect

or-t

o-E

mitt

erSa

tura

tion

Vol

tage

,VC

E(s

at)

–V

retemaraP lobmyS snoitidnoCsgnitaR

tinUnim pyt xam

egatloVniatsuSrettimE-ot-rotcelloC V OEC )sus( IC I,Am001= B 0= 007 V

egatloVnoitarutaSrettimE-ot-rotcelloC V EC )tas( IC I,A5= B A5.0= 5.1 V

egatloVnoitarutaSrettimE-ot-esaB V EB )tas( IC I,A5= B A5.0= 0.2 V

egatloVnwodkaerBesaB-ot-rotcelloC V OBC)RB( IC I,Am1= E 0= 0051 V

egatloVdrawroFedoiD VF I CE A5= 0.2 V

emiTllaF tf IC I,A5= 1B I,A5.0= 2B V,A5.2–= CC R,V002= L 04= Ω 8.0 sµ

emiTegarotS t gts IC I,A5= 1B I,A5.0= 2B V,A5.2–= CC R,V002= L 04= Ω 3 sµ

Page 3: 2SC5388

2SC5388

No.6283–3/4

50

0

60

70

30

20

10

40

200 6040 80 100 140120 160

PC -- Tc

IT00800

4.0

0

3.5

3.0

2.0

1.0

2.5

1.5

0.5

200 6040 80 100 140120 160

PC -- Ta

IT00799

F.B A S O R.B A S O

10

1.0

75

32

5

32

75

32

0.175

32

102 53 7 1002 53 7 10002 53 7

ICP

PC =50W

10ms

IC

Tc=25°CSingle pulse

300µs

PT =100µs

DCoperation

IT00797

1.0

0.175

32

75

32

1075

32

5

32

1000100 2 3255 53 77

L=500µHIB2=--2ATc=25°CSingle pulse

IT00798

1ms

ICP

10

1.0

7

5

3

2

7

5

3

2

0.1--10--0.1 32 5 7 32 5 7--1.0

tstg

tf

10

7

5

3

2

7

5

3

2

1.0

0.1100.1 32 5 7 32 5 71.0

SW Time -- IC

IT00795 IT00796

IC / IB1=10IB2 / IB1=5R load

tstg

tf

SW Time -- IB2IC=5AIB1=0.5AR load

Col

lect

or C

urre

nt,I

C–

A

Col

lect

or C

urre

nt,I

C–

A

Collector-to-Emitter Voltage, VCE – V Collector-to-Emitter Voltage, VCE – V

Collector Current, IC – A

Switc

hing

Tim

e,SW

Tim

e –

µs

Switc

hing

Tim

e,SW

Tim

e –

µs

Base Current, IB2 – A

Col

lect

or D

issi

patio

n,P C

–W

Col

lect

or D

issi

patio

n,P C

–W

Ambient Temperature, Ta – °C

No heat sink

Case Temperature, Tc – °C

Page 4: 2SC5388

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guaranteesof the performance, characteristics, and functions of the described products as mounted in the customer'sproducts or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and allsemiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,or that could cause damage to other property. When designing equipment, adopt safety measures sothat these kinds of accidents or events cannot occur. Such measures include but are not limited to protectivecircuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or al l SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations,such products must not be expor ted without obtaining the expor t l icense from the authorit iesconcerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic ormechanical, including photocopying and recording, or any information storage or retrieval system,or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is notguaranteed for volume production. SANYO believes information herein is accurate and reliable, butno guarantees are made or implied regarding its use or any infringements of intellectual property rightsor other rights of third parties.

This catalog provides information as of January, 2000. Specifications and information herein are subject

to change without notice.

2SC5388

PS No.6288–4/4

Page 5: 2SC5388

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