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    2SC5353

    2006-11-101

    TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)

    2SC5353

    Switching Regulator and High Voltage Switching

    ApplicationsHigh-Speed DC-DC Converter Applications

    Excellent switching times: tr= 0.7 s (max), tf= 0.5 s (max)

    High collectors breakdown voltage: VCEO= 800 V

    Absolute Maximum Ratings (Tc = 25C)

    Characteristics Symbol Rating Unit

    Collector-base voltage VCBO 900 V

    Collector-emitter voltage VCEO 800 V

    Emitter-base voltage VEBO 7 V

    DC IC 3Collector current

    Pulse ICP 5A

    Base current IB 1 A

    Ta = 25C 2.0Collector powerdissipation Tc = 25C

    PC25

    W

    Junction temperature Tj 150 C

    Storage temperature range Tstg 55 to 150 C

    Note: Using continuously under heavy loads (e.g. the application of high

    temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

    decrease in the reliability significantly even if the operating conditions (i.e. operating

    temperature/current/voltage, etc.) are within the absolute maximum ratings.

    Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

    (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

    and estimated failure rate, etc).

    Unit: mm

    JEDEC

    JEITA SC-67

    TOSHIBA 2-10R1A

    Weight: 1.7 g (typ.)

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    Electrical Characteristics (Tc = 25C)

    Characteristics Symbol Test Condition Min Typ. Max Unit

    Collector cut-off current ICBO VCB= 720 V, IE= 0 100 A

    Emitter cut-off current IEBO VEB= 7 V, IC= 0 10 A

    Collector-base breakdown voltage V (BR) CBO IC= 1 mA, IE= 0 900 V

    Collector-emitter breakdown voltage V (BR) CEO IC= 10 mA, IB= 0 800 V

    hFE (1) VCE= 5 V, IC= 1 mA 10 DC current gain

    hFE (2) VCE= 5 V, IC= 0.15 A 15

    Collector-emitter saturation voltage VCE (sat) IC= 1.2 A, IB= 0.24 A 1.0 V

    Base-emitter saturation voltage VBE (sat) IC= 1.2 A, IB= 0.24 A 1.3 V

    Rise time tr 0.7

    Storage time tstg 4.0Switching time

    Fall time tfIB1= 0.24 A, IB2= 0.48 A,duty cycle 1%

    0.5

    s

    Marking

    IB1

    20 s

    VCC360 V

    Output

    300

    IB2

    IB1Input

    IB2

    IC

    Lot No.

    A line indicateslead (Pb)-free package orlead (Pb)-free finish.

    C5353 Part No. (or abbreviation code)

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    Collector-emitter voltage VCE (V)

    IC VCE

    Collectorcurrent

    IC

    (A)

    hFE IC

    DCcurrentgain

    hFE

    Collector current IC (A)

    Collector current IC (A)

    VBE (sat) IC

    Base-emittersaturationvoltage

    VBE(sat)

    (V)

    VCE (sat) IC

    Colle

    ctor-emittersaturationvoltage

    VCE(sat)

    (V)

    Collector current IC (A)

    Base-emitter voltage VBE (V)

    IC VBE

    Collectorcurrent

    IC

    (A)

    Collector current IC (A)

    Switching Characteristics

    Switchingtime

    (s)

    Common emitter

    VCE= 5 V

    Tc = 100C

    55

    3

    2

    1

    00.2 0.80 1.20.4 0.6 1.0 1.4

    25

    Tc = 100C

    55

    25

    Common emitter

    VCE= 5 V

    0.001 0.01 10

    1000

    1

    100

    10

    0.1 1 0.10.05

    Common emitter

    IC/IB= 5

    0.01

    10

    10

    Tc = 100C

    55

    25

    1

    0.1

    1

    0.10.01

    0.1 10

    1

    IC= 5IB12IB1= IB2

    Pulse width= 20 sDuty cycle

    1%Tc = 25C

    10

    tf

    tstg

    tr

    10.1

    0.01 0.1 10

    1

    Common emitter

    IC/IB= 5

    10

    Tc = 100C

    55 25

    1

    3

    2

    1

    04 6 820 10

    IB= 0.02 A

    Common emitter

    Tc = 25C

    0.1

    0.05

    0.2

    0.3

    0.4

    0.50.6

    0.8

    1.0

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    Collector-emitter voltage VCE (V)

    Safe Operating Area

    Collectorcurrent

    IC

    (A)

    Ambient temperature Ta (C)

    PC Ta

    Collectorpowerdissipation

    PC

    (W)

    30

    20

    10

    080 120 160400 200

    (1) Tc = Ta Infinite heat sink

    (2) No heat sink(1)

    (2)

    0.0011 3 1000

    10

    *: Single nonrepetitive

    pulse Tc = 25C

    Curves must be derated

    linearly with increase in

    temperature.

    ICmax (continuous)

    ICmax (pulsed)*

    VCEOmax

    DC operation

    Tc = 25C

    1 ms*

    10 ms*

    100 ms*

    0.01

    1

    0.1

    10 50 100 3005 500

    100 s*

    30

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    RESTRICTIONS ON PRODUCT USE20070701-EN

    The information contained herein is subject to change without notice.

    TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

    devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

    stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

    safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure ofsuch TOSHIBA products could cause loss of human life, bodily injury or damage to property.

    In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

    set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

    conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability

    Handbook etc.

    The TOSHIBA products listed in this document are intended for usage in general electronics applications

    (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

    etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

    extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

    bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or

    spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

    medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in hisdocument shall be made at the customers own risk.

    The products described in this document shall not be used or embedded to any downstream products of which

    manufacture, use and/or sale are prohibited under any applicable laws and regulations.

    The information contained herein is presented only as a guide for the applications of our products. No

    responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which

    may result from its use. No license is granted by implication or otherwise under any patents or other rights of

    TOSHIBA or the third parties.

    Please contact your sales representative for product-by-product details in this document regarding RoHS

    compatibility. Please use these products in this document in compliance with all applicable laws and regulations

    that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses

    occurring as a result of noncompliance with applicable laws and regulations.