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Transistors

1Publication date: January 2003 SJC00030BED

2SA1767Silicon PNP epitaxial planar type

For general amplificationComplementary to 2SC1473A

Features High collector-emitter voltage (Base open) V CEO

Absolute Maximum Ratings Ta = 25C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V CBO 300 V

Collector-emitter voltage (Base open) V CEO 300 V

Emitter-base voltage (Collector open) V EBO 5 V

Collector current I C 70 mA

Peak collector current I CP 100 mA

Collector power dissipation P C 750 mW

Junction temperature T j 150 C

Storage temperature T stg 55 to +150 C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage (Base open) V CEO IC = 100 A, I B = 0 300 V

Emitter-base voltage (Collector open) V EBO IE = 1 A, I C = 0 5 V

Forward current transfer ratio * hFE VCE = 10 V, I C = 5 mA 30 150

Collector-emitter saturation voltage V CE(sat) IC = 10 mA, I B = 1 mA 0.6 V

Transition frequency f T VCB = 10 V, I E = 10 mA, f = 200 MHz 50 MHz

Collector output capacitance Cob

VCB

= 10 V, IE = 0, f = 1 MHz 7 pF

(Common base, input open circuited)

Electrical Characteristics Ta = 25C 3C

Unit: mm

5.0 0.2

0.7 0.1

0.45 +0.150.1

2.5 +0.60.2

0.45 +0.150.1

2.5

1 2 3

+0.60.2

4.0 0.2

5 . 1

0

. 2

1 2

. 9 0

. 5

2 . 3

0

. 2

0 . 7

0

. 2

1: Emitter2: Collector3: Base

TO-92-B1 Package

Rank P Q

hFE 30 to 100 60 to 150

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

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2SA1767

2 SJC00030BED

VCE(sat) IC hFE IC f T IE

PC Ta IC VCE IC VBE

Cob VCB ICEO Ta

0 16040 12080 14020 100600

1000

800

600

400

200

C o l

l e c t o r p o w e r

d i s s

i p a t i o n

P C ( m W )

Ambient temperature T a ( C)

0 12 10 8 2 6 40

100

80

60

40

20

Ta = 25 C

0.2 mA

0.1 mA

0.3 mA

0.4 mA

0.5 mA

0.6 mA

0.7 mA

0.8 mA

0.9 mA

IB = 1.0 mA

C o l

l e c t o r c u r r e n

t I C

( m A )

Collector-emitter voltage V CE (V)

0 2.0 1.6 0.4 1.2 0.80

120

100

80

60

40

20

VCE = 10 V

Ta = 75 C 25 C

25 C

Base-emitter voltage V BE (V)

C o l

l e c t o r c u r r e n

t I C

( m A )

0.1 1 10 100 0.01

0.1

1

10

100 IC / IB = 10

Ta = 75 C25 C

25 C

C o l

l e c t o r - e m

i t t e r s a

t u r a

t i o n v o

l t a g e

V C E ( s a t

) ( V )

Collector current I C (mA)

0.1 1 10 1000

300

250

200

150

100

50

VCE = 10 V

Ta = 75 C

25 C

25 C

F o r w a r

d c u r r e n

t t r a n s

f e r r a

t i o h F

E

Collector current I C (mA )

0.1 1 10 1000

120

100

80

60

40

20

VCB = 10 VTa = 25 C

T r a n s

i t i o n

f r e q u e n c y

f T ( M H z )

Emitter current I E (mA )

1 10 1000

20

16

12

8

4

IE = 0f = 1 MHzTa = 25 C

Collector-base voltage VCB

(V)

C o l

l e c t o r o u

t p u t c a p a c i

t a n c e

( C o m m o n

b a s e , i

n p u t o p e n c i r c u i

t e d )

C o b

( p F )

0 24020016040 120801

10

100

1000

10000 VCE = 120 V

Ambient temperature T a ( C)

I C E O

( T a )

I C E O

( T a

= 2

5 C )

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