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Semiconductor Components Industries, LLC, 2011

October, 2011 Rev. 141 Publication Order Number:

2N6387/D

2N6387, 2N6388

Plastic Medium-PowerSilicon Transistors

These devices are designed for generalpurpose amplifier and

low

speed switching applications.

Features

High DC Current Gain hFE= 2500 (Typ) @ IC= 4.0 Adc

CollectorEmitter Sustaining Voltage @ 100 mAdc

VCEO(sus) = 60 Vdc (Min) 2N6387

= 80 Vdc (Min) 2N6388

Low CollectorEmitter Saturation Voltage

VCE(sat) = 2.0 Vdc (Max) @ IC

= 5.0 Adc 2N6387, 2N6388

Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors

TO220AB Compact Package

Pb

Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating Symbol Value Unit

CollectorEmitter Voltage 2N63872N6388

VCEO 6080

Vdc

CollectorBase Voltage 2N63872N6388

VCB 6080

Vdc

EmitterBase Voltage VEB 5.0 Vdc

Collector Current ContinuousPeak

IC 1015

Adc

Base Current IB 250 mAdc

Total Power Dissipation @ TC= 25CDerate above 25C

PD 650.52

WW/C

Total Power Dissipation @ TA= 25CDerate above 25C

PD 2.00.016

WW/C

Operating and Storage Junction,Temperature Range

TJ, Tstg 65 to +150 C

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, JunctiontoCase RJC 1.92 C/W

Thermal Resistance, JunctiontoAmbient RJA 62.5 C/W

Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.1. Indicates JEDEC Registered Data.

*For additional information on our PbFree strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.

DARLINGTON NPN SILICON

POWER TRANSISTORS

8 AND 10 AMPERES

65 WATTS, 60 80 VOLTS

TO220AB

CASE 221A

STYLE 1

12

3

4

http://onsemi.com

2N638x = Device Codex = 7 or 8

G = Pb

Free PackageA = Assembly LocationY = YearWW = Work Week

MARKING

DIAGRAM

2N638xGAYWW

2N6388 TO220AB 50 Units / Rail

2N6388G TO220AB

(Pb

Free)

50 Units / Rail

Device Package Shipping

2N6387 TO220AB 50 Units / Rail

2N6387G TO220AB(PbFree)

50 Units / Rail

ORDERING INFORMATION

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2

80

40

20

020 40 80 100 120 160

Figure 1. Power Derating

T, TEMPERATURE (C)

PD

,POWERD

ISSIPATION(WATTS)

60

TA TC4.0

2.0

1.0

3.0

0 60 140

TA

TC

ELECTRICAL CHARACTERISTICS (TC

= 25C unless otherwise noted) (Note 2)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (Note 3)(IC= 200 mAdc, IB= 0) 2N6387

2N6388

VCEO(sus)

6080

Vdc

Collector Cutoff Current(VCE= 60 Vdc, IB= 0) 2N6387(VCE= 80 Vdc, IB= 0) 2N6388

ICEO

1.01.0

mAdc

Collector Cutoff Current(VCE= 60 Vdc, VEB(off)= 1.5 Vdc) 2N6387(VCE80 Vdc, VEB(off)= 1.5 Vdc) 2N6388(VCE= 60 Vdc, VEB(off)= 1.5 Vdc, TC= 125C) 2N6387(VCE= 80 Vdc, VEB(off)= 1.5 Vdc, TC= 125C) 2N6388

ICEX

3003003.0

3.0

Adc

mAdc

Emitter Cutoff Current (VBE= 5.0 Vdc, IC= 0)

IEBO

5.0

mAdc

ON CHARACTERISTICS(Note 3)

DC Current Gain(IC= 5.0 Adc, VCE= 3.0 Vdc) 2N6387, 2N6388(IC= 1 0 Adc, VCE= 3.0 Vdc) 2N6387, 2N6388

hFE

1000100

20,000

CollectorEmitter Saturation Voltage(IC= 5.0 Adc, IB= 0.01 Adc) 2N6387, 2N6388(IC= 10 Adc, IB= 0.1 Adc) 2N6387, 2N6388

VCE(sat)

2.03.0

Vdc

BaseEmitter On Voltage(IC= 5.0 Adc, VCE= 3.0 Vdc) 2N6387, 2N6388(IC= 10 Adc, VCE= 3.0 Vdc) 2N6387, 2N6388

VBE(on)

2.84.5

Vdc

DYNAMIC CHARACTERISTICS

SmallSignal Current Gain (IC= 1.0 Adc, VCE= 5.0 Vdc, ftest= 1.0 MHz)

|hfe|

20

Output Capacitance (VCB= 10 Vdc, IE= 0, f = 1.0 MHz)

Cob

200

pF

SmallSignal Current Gain (IC= 1.0 Adc, VCE= 5.0 Vdc, f = 1.0 kHz)

hfe

1000

2. Indicates JEDEC Registered Data.3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

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Figure 2. Switching Times Test Circuit

7.0

0.1

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMPS)

t,TIME(s

)

5.0

0.7

0.3

0.2

0.2 10

VCC= 30 V

IC/IB= 250

IB1= IB2TJ= 25C

tf

0.071.0 5.0

ts

tr

0.1

1.0

3.0

0.5 2.0

0

VCC+ 30 V

SCOPETUT

- 4.0 V

tr, tf10 ns

DUTY CYCLE = 1.0%

RC

D1MUST BE FAST RECOVERY TYPES, e.g.,

1N5825 USED ABOVE IB100 mA

MSD6100 USED BELOW IB100 mA

25 s

D151

RBAND RCVARIED TO OBTAIN DESIRED CURRENT LEVELS

V1

APPROX

+ 12 V

V2

APPROX

- 8 V

8.0 k 120

FOR tdAND tr, D1IS DISCONNECTED

AND V2= 0

RB

td

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.010.01

0.7

0.5

0.3

0.2

0.1

0.07

0.050.03

0.02

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

ZJC(t) = r(t) RJCRJC= 1.92C/W MAX

D CURVES APPLY FOR POWERPULSE TRAIN SHOWN

READ TIME AT t1TJ(pk)- TC= P(pk)ZJC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01SINGLE PULSE

0.1

r(t)

,TRANSIE

NTTHERMALRESISTANCE

(NORMALIZED)

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BONDING WIRE LIMITED

THERMALLY LIMITED @ TC= 100C

SECOND BREAKDOWN LIMITED

20

1.0

Figure 5. Active-Region Safe Operating Area

2.0

0.0310 20 80

TJ= 150C

0.2

5.0

0.5

IC,

COLLE

CTORCURRENT(AMPS)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

40

1.0

0.1

dc

2.0 604.0 6.0

50 s

10 s

CURVES APPLY BELOW RATED VCEO

5 ms

1 ms50 ms

2N6387

2N6388

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate ICVCElimits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5is based on TJ(pk)= 150C; TCis

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)< 150C. TJ(pk)may be calculated from the data in Figure

4. At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown

10,000

1.0

Figure 6. Small

Signal Current Gain

f, FREQUENCY (kHz)

102.0 5.0 10 20 50 100 200 1000

500

300

100

5000

hFE

,SMALL

-SIGNALCURRENTG

AIN

20

3000

200

500

2000

1000

3050

TC= 25C

VCE= 4.0 Vdc

IC= 3.0 Adc

300

0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

301.0 2.0 5.0 20 10010

C,

CAPACITANCE(pF)

200

100

70

50

Cib

Cob

500.2 0.5

TJ= 25C

VCE

,COLLEC

TOR

-EMITTERVOLTAGE(VOLTS)

0.1

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 0.7 1.0 2.0 10

500

300

hFE

,DCCURRENTGAIN

TJ= 150C

25C

-55C

VCE= 4.0 V

2007.0

20,000

5000

10,000

30002000

1000

3.0 5.0

Figure 9. Collector Saturation Region

3.0

IB, BASE CURRENT (mA)

0.3 0.5 1.0 2.0 3.0 5.0 7.0 30

2.6

2.2

1.8

1.4

IC= 2.0 A

TJ= 25C

4.0 A 6.0 A

1.00.7 2010

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PACKAGE DIMENSIONS

TO220CASE 221A09

ISSUE AGNOTES:

1. DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALLBODY AND LEAD IRREGULARITIES AREALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.570 0.620 14.48 15.75B 0.380 0.405 9.66 10.28C 0.160 0.190 4.07 4.82D 0.025 0.036 0.64 0.91F 0.142 0.161 3.61 4.09

G 0.095 0.105 2.42 2.66H 0.110 0.161 2.80 4.10J 0.014 0.025 0.36 0.64K 0.500 0.562 12.70 14.27L 0.045 0.060 1.15 1.52N 0.190 0.210 4.83 5.33Q 0.100 0.120 2.54 3.04R 0.080 0.110 2.04 2.79S 0.045 0.055 1.15 1.39T 0.235 0.255 5.97 6.47U 0.000 0.050 0.00 1.27

V 0.045 --- 1.15 ---Z --- 0.080 --- 2.04

B

Q

H

Z

L

V

G

N

A

K

F

1 2 3

4

D

SEATINGPLANET

C

ST

U

R

J

STYLE 1:PIN 1 . BASE

2. COLLECTOR3 . EMITT ER4. COLLECTOR

ON Semiconductorand are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Typical parameters which may be provided in SCILLC data sheets and/or specif ications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiar ies, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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2N6387/D

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