284169_DS

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File Number 2282.6

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999

IRF9540, RF1S9540SM

19A, 100V, 0.200 Ohm, P-Channel PowerMOSFETs

These are P-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. They can be operated directly from

integrated circuits.

Formerly Developmental Type TA17521.

Features

19A, 100V

rDS(ON) = 0.200

Single Pulse Avalanche Energy Rated

SOA is Power Dissipation Limited

Nanosecond Switching Speeds

Linear Transfer Characteristics

High Input Impedance

Related Literature

- TB334 Guidelines for Soldering Surface Mount

Components to PC Boards

Symbol

Packaging

JEDEC TO-220AB JEDEC TO-263AB

Ordering Information

PART NUMBER PACKAGE BRAND

IRF9540 TO-220AB IRF9540

RF1S9540SM TO-263AB RF1S9540

NOTE: Whenordering,use the entirepart number. Add the suffix 9Ato

obtain theTO-263ABvariant in the tape and reel, i.e., RF1S9540SM9A.

G

D

S

GATE

DRAIN (FLANGE)

SOURCEDRAIN

DRAIN(FLANGE)

GATE

SOURCE

Data Sheet July 1999

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Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

IRF9540,

RF1S9540SM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS -100 V

Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -100 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDTC = 100

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

-19

-12

A

A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM -76 A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS 20 V

Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 150 WLinear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W/ oC

Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 960 mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TLPackage Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

oCoC

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS ID = -250A, VGS = 0V (Figure 10) -100 - - V

Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = -250A -2 - -4 V

Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - -25 A

VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - -250 A

On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = -10V -19 - - A

Gate to Source Leakage Current IGSS VGS = 20V - - 100 nA

Drain to Source On Resistance (Note 2) rDS(ON) ID = -10A, VGS = -10V (Figures 8, 9) - 0.150 0.200

Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON) MAX, ID = -6A

(Figure 12)

5 7 - S

Turn-On Delay Time td(ON) VDD = -50V, ID 19A, RG = 9.1, RL = 2.3,

VGS = -10V, (Figures 17, 18)

MOSFET Switching Times are EssentiallyIndependent of Operating Temperature

- 16 20 ns

Rise Time tr

- 65 100 ns

Turn-Off Delay Time td(OFF) - 47 70 ns

Fall Time tf - 28 70 ns

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT) VGS = -10V, ID = -19A, VDS = 0.8 x Rated BVDSS,

Ig(REF) = -1.5mA (Figures 14, 19, 20)

Gate Charge is Essentially Independent of

Operating Temperature

- 70 90 nC

Gate to Source Charge Qgs - 14 - nC

Gate to Drain Miller Charge Qgd - 56 - nC

Input Capacitance CISS VDS = -25V, VGS = 0V, f = 1MHz

(Figure 11)

- 1100 - pF

Output Capacitance COSS - 550 - pF

Reverse Transfer Capacitance CRSS - 250 - pF

Internal Drain Inductance LD Measured From the

Contact Screw on Tab to

the Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

- 3.5 - nH

Measured From the Drain

Lead, 6mm (0.25in) from

Package to the Center of

Die

- 4.5 - nH

Internal Source Inductance LS Measured From the

Source Lead, 6mm

(0.25in) From Package to

Source Bonding Pad

- 7.5 - nH

Thermal Resistance Junction to Case RJC - - 1oC/W

Thermal Resistance Junction to Ambient RJA Typical Socket Mount - - 62.5oC/W

LS

LD

G

D

S

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Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current ISD Modified MOSFET Symbol

Showing the Integral Re-

verse

P-N Junction Diode

- - -19 A

Pulse Source to Drain Current

(Note 3)

ISDM - - -76 A

Source to Drain Diode Voltage (Note 2) VSD TC = 25oC, ISD = -19A, VGS = 0V (Figure 13) - - -1.5 V

Reverse Recovery Time trr TJ = 150oC, ISD = 19A, dISD/dt = 100A/s - 170 - ns

Reverse Recovery Charge QRR TJ = 150oC, ISD = 19A, dISD/dt = 100A/s - 0.8 - C

NOTES:

2. Pulse test: pulse width 300s, duty cycle 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 25V, starting TJ = 25oC, L = 4mH, RG = 25, peak IAS = 19A. (Figures 15, 16).

G

D

S

Typical Performance Curves Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

TC, CASE TEMPERATURE (oC)

25 50 75 100 125 150 1750

POWERDISSIPATIONMULTIPLIER

00

0.2

0.4

0.6

0.8

1.0

1.2

-5

025 75 125

ID,DRAINCURRENT(A)

TC, CASE TEMPERATURE (oC)

-15

175

-10

-20

-20

t1, RECTANGULAR PULSE DURATION (s)

ZJC,TRANSIENT

THERMALIMPEDANCE(oC/W)

10-3 10-2

1

10-5 10-40.01

0.1

SINGLE PULSE

0.1

0.02

0.2

0.5

0.01

0.05

PDM

1010-1 1

NOTES:

DUTY FACTOR: D = t1/t2PEAK TJ = PDM x RJC + TC

t1t2

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FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

NOTE: Heating effect of 2s pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENTFIGURE 9. NORMALIZED DRAIN TOSOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves Unless Otherwise Specified (Continued)

VDS, DRAIN TO SOURCE VOLTAGE (V)

10

ID,DRAINCURR

ENT(A)

100

100

1

1010.1

10s100s

1ms

10ms

100ms

DC

SINGLE PULSE

TJ = MAX RATEDTC = 25

oC

BY rDS(ON)

AREA IS LIMITED

OPERATION IN THIS

500

200

ID,DRAINCURR

ENT(A)

0 -10 -20 -30 -40

-20

-40

-60

-80

-100

-50

VGS = -16V


0

VGS = -14V

VGS = -7V

VGS = -6V

VGS = -8V

VGS = -12V

VGS = -10V

VGS = -9V

VGS = -4VVGS = -5V

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

ID,DRAINCURRENT(A)

0 -2 -4 -6 -8

-10

-20

-30

-40

-50

-10

VGS = -16V


0

VGS = -14VVGS = -12V

VGS = -7V

VGS = -6V

VGS = -8V

VGS = -10V

VGS = -9V

VGS = -5VVGS = -4V



0 -4 -6 -8 -10-2-0.1

-1

-10

IDS(ON),DRAINTOSOURCECURRENT(A)

VGS, GATE TO SOURCE VOLTAGE (V)

-100

TJ = 25oC

TJ = -55oC

TJ = 125oC

-12 -14



ID, DRAIN CURRENT (A)

rDS(ON),DRAINTOSOURCEON

0.26

0.22

0.18

0.14

0.10

0 -20 -40 -60 -80 -100

VGS = -20V

VGS = -10V

RESISTANCE()



-40 0 40 80 120 160

TJ, JUNCTION TEMPERATURE (oC)

2.0

1.5

1.0

0.5

0.2

NORMALIZ

EDDRAINTOSOURCE

VGS = -10V, ID = 10A

ONRESISTANCE



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FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Typical Performance Curves Unless Otherwise Specified (Continued)

-40 0 40 80 120 160

TJ, JUNCTION TEMPERATURE (oC)

1.15

1.05

0.95

0.85

0.75

NORMALIZEDDRAINT

OSOURCE

BREAKDOWNVOLTAGE

ID = 250A

2000

400

00 -20 -50

C,CAPACITANC

E(pF)

1200


1600

800

-10 -30 -40

CISS = CGS + CGDCRSS = CGDCOSS CDS + CGD

VGS = 0V, f = 1MHz

CISS

COSS

CRSS

9

6

3

0 -20 -40

ID, DRAIN CURRENT (A)

0

15

12

-60 -80 -100

gfs,TRANSCONDUCTANCE(S)

TJ = 125oC

TJ = 25oC

TJ = -55oC



0.4 1.0 1.2 1.6 1.80.6

VSD, SOURCE TO DRAIN VOLTAGE (V)

0.8 1.40.1

1

10

ISD,SOURCETODRAINCURRENT(A)

100

TJ = 25oC

TJ = 150oC



Qg(TOT), GATE CHARGE (nC)

VGS,GATE

TOSOURCE(V)

0 20 40 60 80

-10

- 5

0

VDS = -20V

VDS = -50V

VDS = -80V

ID = -19A

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Test Circuits and Waveforms

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

tP

0.01

L

IAS

+

-

VDS

VDD

RG

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

0V

VGS

VDD

VDS

BVDSS

tP

IAS

tAV

0

VGS

RL

RG

DUT

+

-VDD

td(ON)

tr

90%

10%

VDS 90%

tf

td(OFF)

tOFF

90%

50%50%

10%

PULSE WIDTH

VGS

tON

10%

0

0

0.3F

12VBATTERY

50k

+VDS

S

DUT

D

G

Ig(REF)

0

(ISOLATED

-VDS

0.2F

CURRENTREGULATOR

ID CURRENT

SAMPLING

IG CURRENT

SAMPLING

SUPPLY)

RESISTOR RESISTOR

DUT

Qg(TOT)

Qgd

Qgs

VDS

0

VGS

VDD

0

Ig(REF)

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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate andreliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

Sales Office HeadquartersNORTH AMERICA

Intersil Corporation

P. O. Box 883, Mail Stop 53-204Melbourne, FL 32902

TEL: (407) 724-7000

FAX: (407) 724-7240

EUROPE

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Mercure Center100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111

FAX: (32) 2.724.22.05

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7F-6, No. 101 Fu Hsing North RoadTaipei, Taiwan

Republic of China

TEL: (886) 2 2716 9310

FAX: (886) 2 2715 3029

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