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Dedicated to all the Electronics Dedicated to all the Electronics Dedicated to all the Electronics Dedicated to all the Electronics

engineers and engineers and engineers and engineers and futurefuturefuturefuture ESE aspirantsESE aspirantsESE aspirantsESE aspirants



A word to the students Engineering services examination offers one of the most promising and

prestigious careers for service to the nation. Over the past few years, it has

become more competitive as a number of aspirants are increasingly

becoming interested in government jobs due to decline in other career

options.

In my opinion, ESE rigorously tests candidates’ overall understanding of

concepts, ability to apply their knowledge and personality level by

screening them through various stages. A candidate is supposed to smartly deal with the

syllabus not just mugging up concepts. Thorough understanding with critical analysis of

topics and ability to express clearly are some of the pre-requisites to crack this exam. The

syllabus and questioning pattern has remained pretty much the same over the years.

Established in 2006 by a team of IES and GATE toppers, we at Engineers Institute of India

have consistently provided rigorous classes and proper guidance to engineering students over

the nation in successfully accomplishing their dreams. We believe in providing exam-

oriented teaching methodology with updated study material and test series so that our

students stay ahead in the competition. The faculty at EII are a team of experienced

professionals who have guided thousands to aspirants over the years. They are readily

available before and after classes to assist students and we maintain a healthy student-faculty

ratio. Many current and past years’ toppers associate with us for contributing towards our

goal of providing quality education and share their success with the future aspirants. Our

results speak for themselves. Past students of EII are currently working in various

departments and PSU’s and pursuing higher specializations. We also give scholarships to

meritorious students.

A detailed solution of the past years conventional questions, prepared by toppers, will

be available from January onwards.

R.K. Rajesh

Director

Engineers Institute of India

[email protected]



TOPPER’s VIEWS

Engineering Services examination offers one of the most promising and

fulfilling careers to the engineering graduates.

ESE 2012 was my 2nd attempt. In ESE 2011, I was not able to score

much in Conventional papers and so I gave more priority to

Conventional papers this time.

During my preparation, I realized that ES exam is not easy to crack

particularly due to the subjective (or conventional) papers. The three stages of the exam

checks the aspirant on various grounds like speed, accuracy and in-depth understanding of the

core subjects of the concerned stream, in a very comprehensive way. The interview can be a

little dicey. So I suggest the candidate should score as much as possible in written exams

itself to minimize dependence on the interview. Mostly it is the subjective papers which

affects qualification and if qualified, one’s rank. Most candidates are not able to score good

marks in subjective papers because one’s speed of answering, style of presentation and

relevance of answer’s content matter a lot. But attempting all the questions in the

conventional papers is not required. One needs to focus on one’s stronger subjects and

prepare in a selective way. That’s why topic-wise selective approach to conventional papers

is required. This book is the first of its kind to give the student an idea of weight-age of

different topics on a year by year basis.

Kunal Srivastava

AIR -1 ESE 2012

AIR -44 GATE 2013

Electronics and Telecommunication Engineering

GS+English Objective 1 Objective 2 Conventional 1 Conventional 2 Interview Total

117 112 110 132 122 122 715/1200



SYLLABUS

IES Conventional Paper-I (E & T)

1. MATERIALS AND COMPONENTS

Structure and properties of Electrical Engineering materials; Conductors, Semiconductors

and Insulators, magnetic, Ferroelectric, Piezoelectric, Ceramic, Optical and Super-

conducting materials. Passive components and characteristics Resistors, Capacitors and

Inductors; Ferrites, Quartz crystal Ceramic resonators, Electromagnetic and

Electromechanical components.

2. PHYSICAL ELECTRONICS, ELECTRON DEVICES AND ICs

Electrons and holes in semiconductors, Carrier Statistics, Mechanism of current flow in a

semiconductor, Hall effect; Junction theory; Different types of diodes and their

characteristics; Bipolar Junction transistor; Field effect transistors; Power switching devices

like SCRs, GTOs, power MOSFETS; Basics of ICs - bipolar, MOS and CMOS types; basic of

Opto-Electronics.

3. SIGNALS AND SYSTEMS

Classification of signals and systems: System modelling in terms of differential and

difference equations; State variable representation; Fourier series; Fourier transforms and

their application to system analysis; Laplace transforms and their application to system

analysis; Convolution and superposition integrals and their applications; Z-transforms and

their applications to the analysis and characterisation of discrete time systems; Random

signals and probability, Correlation functions; Spectral density; Response of linear system to

random inputs.

4. NETWORK THEORY

Network analysis techniques; Network theorems, transient response, steady state sinusoidal

response; Network graphs and their applications in network analysis; Tellegen’s theorem.

Two port networks; Z, Y, h and transmission parameters. Combination of two ports, analysis

of common two ports. Network functions : parts of network functions, obtaining a network

function from a given part. Transmission criteria: delay and rise time, Elmore’s and other

definitions effect of cascading. Elements of network synthesis.

5. ELECTROMAGNETIC THEORY

Analysis of electrostatic and magnetostatic fields; Laplace’s and Poisson’s equations;

Boundary value problems and their solutions; Maxwell’s equations; application to wave

propagation in bounded and unbounded media; Transmission lines : basic theory, standing

waves, matching applications, microstrip lines; Basics of wave guides and resonators;

Elements of antenna theory.

6. ELECTRONIC MEASUREMENTS AND INSTRUMENTATION

Basic concepts, standards and error analysis; Measurements of basic electrical quantities

and parameters; Electronic measuring instruments and their principles of working: analog

and digital, comparison, characteristics, application. Transducers; Electronic measurements

of non electrical quantities like temperature, pressure, humidity etc; basics of telemetry for

industrial use.



IES Conventional Paper-II (E & T)

7. ANALOG ELECTRONIC CIRCUITS

Transistor biasing and stabilization. Small signal analysis. Power amplifiers. Frequency

response. Wide banding techniques. Feedback amplifiers. Tuned amplifiers. Oscillators.

Rectifiers and power supplies. Op Amp, PLL, other linear integrated circuits and

applications. Pulse shaping circuits and waveform generators.

8. DIGITAL ELECTRONIC CIRCUITS

Transistor as a switching element; Boolean algebra, simplification of Boolean functions,

Karnaugh map and applications; IC Logic gates and their characteristics; IC logic families :

DTL, TTL, ECL, NMOS, PMOS and CMOS gates and their comparison; Combinational logic

Circuits; Half adder, Full adder; Digital comparator; Multiplexer Demulti-plexer; ROM an their

applications. Flip flops. R-S, J-K, D and T flip-flops; Different types of counters and registers

Waveform generators. A/D and D/A converters. Semiconductor memories.

9. CONTROL SYSTEMS

Transient and steady state response of control systems; Effect of feedback on stability and

sensitivity; Root locus techniques; Frequency response analysis. Concepts of gain and

phase margins: Constant-M and Constant-N Nichol’s Chart; Approximation of transient

response from Constant-N Nichol’s Chart; Approximation of transient response from closed

loop frequency response; Design of Control Systems, Compensators; Industrial controllers.

10. COMMUNICATIONS SYSTEMS

Basic information theory; Modulation and detection in analogue and digital systems;

Sampling and data reconstructions; Quantization & coding; Time division and frequency

division multiplexing; Equalization; Optical Communication : in free space & fiber optic;

Propagation of signals at HF, VHF, UHF and microwave frequency; Satellite

Communication.

11. MICROWAVE ENGINEERING

Microwave Tubes and solid state devices, Microwave generation and amplifiers,

Waveguides and other Microwave Components and Circuits, Microstrip circuits, Microwave

Antennas, Microwave Measurements, Masers, lasers; Microwave propagation. Microwave

Communication Systems terrestrial and Satellite based.

12. COMPUTER ENGINEERING

Number Systems. Data representation; Programming; Elements of a high level programming

language PASCAL/C; Use of basic data structures; Fundamentals of computer architecture;

Processor design; Control unit design; Memory organisation, I/o System Organisation.

Microprocessors : Architecture and instruction set of Microprocessors 8085 and 8086,

Assembly language Programming. Microprocessor based system design: typical examples.

Personal computers and their typical uses.



ESE-2012 Objective papers cut-off marks (Out of 600 Marks)

Marks Secured by the LAST candidate for the evaluation of conventional papers.

Branch General OBC SC ST PH-1 PH-2

Civil 149 146 124 105 87 87

Mechanical 212 198 169 125 72 72

Electrical 232 209 184 174 99 99

Electronics

& Telecom.

244 241 196 194 65 65

ESE-2012 Interview / Personality Test call cut-off marks (Out of 1000 Marks)

Marks Secured by the LAST written qualified candidate called for Personality Test


Civil 342 296 280 255 126 126

Mechanical 366 327 288 235 162 115

Electrical 418 364 329 315 211 131

Electronics

& Telecom.

465 436 387 381 263 119

ESE- 2012 Final recruitment cut-off marks (Out of 1200 Marks)


Civil 512 484 422 422 474 393

Mechanical 532 486 416 369 361 351

Electrical 590 542 497 495 315 289

Electronics

& Telecom.

607 585 511 512 382 385

The number of candidates recommended for appointment are:

(i) 269 candidates in Civil Engineering.

(ii) 169 candidates in Mechanical Engineering.

(iii) 103 candidates in Electrical Engineering.

(iv) 94 candidates in Electronics & Telecommunication Engineering.

A total number of 635 candidates recommended for appointments in ESE-2012 lists include 312

General, 183 OBC, 92 SC and 48 ST (including 46 candidates belonging to Physically

Handicapped category).



CONTENT

IES Conventional Paper-I (E & T) ............................................. 1-74

1. MATERIALS AND COMPONENTS ..................................................... 01- 03

2. ELECTRONIC DEVICES & CIRCUITS ............................................... 04-17

3. SIGNALS & SYSTEM ........................................................................ 18-28

4. NETWORK THEORY ......................................................................... 29-49

5. ELECTROMAGNETIC THEORY ........................................................ 50-61

6. MEASUREMENTS AND INSTRUMENTATION ................................... 62-74

IES Conventional Paper-II (E & T)........................................ 75-172

7. ANALOG ELECTRONICS ................................................................. 77-105

8. COMMUNICATION ENGINEERING .................................................. 106-122

9. CONTROL SYSTEMS ....................................................................... 123-138

10. DIGITAL ELECTRONICS ................................................................. 139-153

11. MICROWAVE ENGINEERING ........................................................... 154-164

12. COMPUTER ENGINEERING ............................................................. 165-172



ENGINEERING SERVICES EXAMINATION

IES CONVENTIONAL PAPER-I

ELECTRONICS & TELECOMMUNICATION ENGINEERING

(E & T 1992 to 2013)



1. MATERIALS AND COMPONENTS

Papers-1992 to 2013

Paper 1992

1. A small sphere of polarizability α and radius a is placed at a distance r (>> a) from a

conducting sphere of radius b which is maintained at a potential V. Find an expression for the

force on the dielectric sphere. (8)

Paper 1993

2. (a) An automotive radar operates at a frequency of 8 GHz. Determine the Doppler shift due to an

automobile directly approaching the radar at a speed of 160 Km per hours. (8)

(b) Calcium has a face-centered cubic structure with an ionic radius of 1.06 A. Calculate the

inter-planar separation for (111) plane. (8)

Paper 1997

3. A quartz crystal has a charge sensitivity of 2pC/N, 4.5,rε = diameter of 10 mm and

thickness 2 mm. What is its voltage sensitivity? Find the output voltage due to an applied

force of 100 N.

(Young’s modulus = 10 2

9 10 N/ m× ) (8)

Paper 1999

4. (a) Draw the electrical equivalent circuit of a Quartz Crystal explaining the significance of the

various components of the circuit. (10)

(b) Draw neat sketches of Impedance Vs Frequency, Reactance Versus Frequency of the Quartz

resonator indicating the critical frequencies and their values. (10)

(c) A quartz crystal has the following electrical characteristics:

Series resonance – 200 kHz

Impedance at series resonance – 200 ohms

Parallel resonance at 200.25 kHz

Impedance at parallel resonance – 40 MΩ

Determine the component values of the equivalent circuit. (20)

Paper 2000

5. (a) What are Optoisolators? Where do they find application? Discuss their propagation delay,

operating voltage range and power dissipation. (20)

(b) With a sketch of characteristics, explain the features of a power MOSFET. (10)

(c) The reverse recovery time rrt of a diode is 3 s.µ In a conducting mode to reverse blocking

mode operation. It needs a diode current rate of fall of 30 Amps/ s .µ

Determine (i) storage charge, RRQ and (ii) peak reverse current,

RRI . (10)

28-B/7, Jia Sarai, Near IIT, Hauz Khas, New Delhi

© 2013 ENGINEERS

2. ELECTRONIC DEVICES & CIRCUITS

1. State the relative merits of bipolar and field effect transistors. A field effect transistor is used

as a simple common source amplifier. The gain of the amplifier is found to be 60 and 45 with

load resistances of 20 k and 60 k

conductance of the transistor.

2. For a half-wave rectifier circuit, find the required a.c. voltage for getting a d.c. value of 150

V. The source and load resistances are

3. By drawing neat diagrams, explain the working of bipolar and field

state their relative merits.

4. (a) Consider the circuit of figure. The diode is ideal. The input waveform is as shown. Find the

voltage across the capacitor at 1 ms, 3 ms, 6 ms and 9 ms.

(b) A p-type material has an acceptor ion concentration of

concentration is 1.48 0 / cm .×1

20.13 m / V- s respectively. Calculate the resistivity of the materials:

5. For the JFET in the circuit of figure.

DSSI 5 mA;= poV 3V=

Also in this circuit

DR 2 k ;= Ω

DDV 15 V;=

Calculate GSV and Vo

B/7, Jia Sarai, Near IIT, Hauz Khas, New Delhi-110016. Ph. 011-26514888. www.engineersinstitute.com

S INSTITUTE OF INDIA® . All Rights Reserved

ELECTRONIC DEVICES & CIRCUITS

Papers-1992 to 2013

Paper 1992

merits of bipolar and field effect transistors. A field effect transistor is used


20 k and 60 kΩ Ω respectively. Determine the drain r

conductance of the transistor. (17)

Paper 1993

wave rectifier circuit, find the required a.c. voltage for getting a d.c. value of 150

V. The source and load resistances are 25 k and 75 kΩ Ω respectively.

By drawing neat diagrams, explain the working of bipolar and field-effect transistors and

state their relative merits.

Paper 1994

Consider the circuit of figure. The diode is ideal. The input waveform is as shown. Find the

ross the capacitor at 1 ms, 3 ms, 6 ms and 9 ms.

type material has an acceptor ion concentration of 16 3

1 10 per cm .×

10 31.48 0 / cm .×1 The hole and electron mobilities are

respectively. Calculate the resistivity of the materials:

For the JFET in the circuit of figure.

V 3V with usual notations.

R 8k ;s = Ω

GV 10V;= and SSV 8V.= −

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ELECTRONIC DEVICES & CIRCUITS

merits of bipolar and field effect transistors. A field effect transistor is used


respectively. Determine the drain resistance and trans

wave rectifier circuit, find the required a.c. voltage for getting a d.c. value of 150

(8)

effect transistors and

(17)

Consider the circuit of figure. The diode is ideal. The input waveform is as shown. Find the

(8)

16 31 10 per cm . Its intrinsic carrier

The hole and electron mobilities are 2

0.05 m / V- s and

(8)

(17)



6. A 5.2 V Zener diode has a maximum power dissipation of 260 mW. It maintains a constant

voltage when the current though the diode does not fall below 10% of the maximum

permissible current. A 15 V supply is given to the Zener through a series resistor R. Find the

range for R so that the Zener maintains its constant voltage. Find the new range when the

diode is loaded by 50 Ω load.

7. A silicon diode showed currents of 2 mA and 10 mA respectively when the diode voltages

were 0.6 V and 0.7 V. Estimate the operating temperature of the diode junction.

(17)

Paper 1995

8 . The parameters of a certain transistor are 0.99α = and CBOI 100 A,n= while

BI 20 A.= µ

The transistor, connected in CE configuration, is in amplifying mode. Find CEO C EI , I and I .

All symbols carry their usual meanings.

Paper 1996

9. Sketch the output waveform for the circuit of figure. Also draw the variation of energy stored

in the capacitor as a function of time. Mark appropriate values. Take the diode to be ideal.



3. SIGNALS & SYSTEM

Papers-1992 to 2013

Paper 1995

1. Represent a half sinusoidal pulse ( ) sin , 0 1g t t t= π ≤ ≤ by an expression involving sine waves

and step functions; and using this representation, write the Laplace transform of the given

pulse.

Paper 1996

2. Determine the value of k so that all the roots of the following polynomial are to the left of the

line 0.5.σ = −

3 2F( ) 6 11s s s s k= + + +

Paper 1997

3. (a) The Fourier Transforms of the input and output of a linear time invariant system are 2

2and

(1 ) (1 2 )

j je e

j j

− πω − πω

+ ω − ω + ω respectively. What is its impulse response? (8)

(b) Determine the Laplace transform of the periodic function shown in figure (8)

4.

(a) The complex exponential Fourier series representation of a signal f(t) over the interval (O, T)

is

2

3( )

4 ( )

jn t

n

f t en

∞π

= −∞

=+ π

∑

(i) Determine the numerical value of T.

(ii) One of the components of f (t) is A cos 3 .tπ what is the numerical value of A?

(iii) Find the minimum number of terms which must be retained in the representation in order

to include 99.9% of the energy of f(t) in the interval. (Assume signal energy as 0.669 over the

period). (17)

(b) A discrete system has the unit pulse response: h(n T) = 3, 2, 1, 0, 0, 0, 0, ……… (17)

Determine its response for the input:

x(n T) = 1, 1, 2, 2, 1, 1, 0, 0, 0, 0, ……..



Paper 1998

5. A train of rectangular pulses, making excursions from zero to one volt, have a duration of 2 sµ

and are separated by intervals of 10 s.µ Assume that the center of one pulse is located at t = 0

and obtain the trigonometric, Fourier series for this pulse train. (8)

6. If F(s) = 2

(3 4) ( 5)

( 1) ( 6)

s s

s s

+ +

+ + find f (0), (0), (0).f f′ ′′

(Note: F(s) is the Laplace transform of f (t)). (17)

Paper 2000

7.

(a) Define the z-transform. (5)

(b) Discuss the method of obtaining inverse z-transform of the form r(kT). (20)

(c) Given the z-transformed function: T

T

(1 )R( )

( 1) ( )

ez

z z e

−α

−α

−=

− −

Determine the inverse. (15)

Paper 2002

8. (a) With mathematical expressions, define the properties ‘stability’ and ‘casuality’ of a system.

(10)

(b) Obtain the difference equation to represent the discrete time system of the figure given below:

(15)

(c) For the above ‘direct form I’ implementation of a Linear Time Invariant [LTI] system, derive

the ‘direct form II’ implementation. Show the block diagram and point out the improvement.

(15)



4. NETWORK THEORY

Papers-1992 to 2013

Paper 1992

1.

(a) Calculate the steady state current in the 2 Ω -resistor shown in the figure below. The internal

resistance of the battery is negligible and the value of capacitor C is

(8)

(c) An a-c supply of 230 V is applied to a half-wave rectifier circuit through a transformer having

primary to secondary turns ratio 10 : 1.

Find: (i) the d-c output voltage and

(ii) the peak inverse voltage. Assume the diode to be ideal. (8)

2. In the circuit shown in the figure below, the capacitor and inductor do not have initial stored

energy. On closing the switch at t = 0, it is found that (0 )i+

= 15 mA and that

V ( ) 0ab t = for all 0.t ≥ Evaluate R and L. (17)

3. A 1 Fµ capacitor and a 2 Fµ -capacitor are connected in series across a 1200 V supply line.

Find the charge on each capacitor and voltage across each. The charged capacitors are

subsequently disconnected from the line and from each other and reconnected with terminals of

like sign together. Find the final charge on each and voltage across each. (17)

4. (a) The frequency pattern for an impedance LCZ (s) is shown in the figure below. Where O and

X represent zero and pole respectively. If LC

1lim Z ( ) .s

ss→∞

= Determine LCZ ( )s and realize its first

Foster form. (17)

0.2 F.µ



(b) In the figure below, switch S is open and at 0 ,t+= the value of capacitor voltage

VV (0 ) .

3

b

c

+ = When the capacitor charges to a level of 2 V

.3

b The switch closes. Which isolates

the voltage Vb from the capacitor. When the capacitor discharges back to a level of / 3.bV The

switch opens again. Determine the two timing intervals in a cycle. (17)

Paper 1993

5. (a) If each of the resistances in the network shown in Fig. 1 (a) is R, what is the resistance

between the terminals A and B? (8)

(a) Assuming the internal resistance of the voltage source to be negligible calculate the current in

branch XY of the circuit show.

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