2.3.1 Teaching Learning Process
Transcript of 2.3.1 Teaching Learning Process
2.3.1 Teaching Learning Process
Contents
1. Course Plan and Lesson Plan
2. Sample copy of mentoring
3. Sample copy of Paper Publications
4. Sample copy of Mini Projects
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PHOTOCATALYTIC DEGRADATION OF E. COLI PRESENT IN DRINKING WATER
USING COMMERCIAL, SYNTHESIZED AND DOPED TI....
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|| Volume 2 || Issue 12 || 2017 || ISO 3297:2007 Certified ISSN (Online) 2456-3293
WWW.OAIJSE.COM 32
STUDIES ON PHOTOCATALYTIC DEGRADATION OF E. COLI
PRESENT IN DRINKING WATER USING COMMERCIAL,
SYNTHESIZED AND DOPED TIO2 AS CATALYST
*Shiva Naresh Mulampaka 1 , A. B. Aditya Naga SaiNaidu2 1,2 Department of Chemical Engineering, ANITS, Visakhapatnam, 531162, INDIA 1,2
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Abstract: Photocatalytic degradation employing semiconductors as photocatalyst is a promising and attractive method for
the removal of pollutants in wastewater. TiO2 has been identified as the most effective and useful photocatalyst. However,
the applications of TiO2 has been retarded by fast recombination of electron-hole pairs and their wide band gap which
corresponds to the UV light. Therefore, the study with modifying TiO2 in order to reduce the electron-hole
recombination and sensitization towards visible light is one of the current hotspots in the photocatalyst research.
Photocatalytic degradation experiments were carried out using E. coli, UV light was mainly used as photon source. The
proposed study aims at investigating the above mentioned aspects by conducting an in-depth study of E. coli degradation
using commercially available, sol-gel synthesized and doped TiO2. Experimental runs were carried out with varying
inoculum levels of 1 ml/L, 10 ml/L, 20 ml/L and this was fixed at 20 ml/L and also with varying concentrations of
commercially available TiO2 i.e. 0.05 g/L, 0.1 g/L, 0.5 g/L, 0.7g/L, 1 g/L and 2 g/L in 100 ml and 1L total volume where 0.5
g/L was found to be optimum catalyst concentration for which the time taken was 2 h to degrade. Degradation studies
were also conducted with sol-gel synthesized TiO2 and Ag doped TiO2 which took 9 and 6 min respectively for the
optimum 0.5g/L catalyst concentration. Also Ag doped TiO2 was tested under sunlight for which the degradation time
was 30 min.
Keywords: Photocatalytic degradation, Photocatalyst, sol-gel, Ag doped , E.coli
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I INTRODUCTION
Water pollution is a major problem in the global context,
which is leading to worldwide cause of death and diseases
that account for the death of more than 14,000 people daily
[1,2]. Drinking Water contaminated with chemicals and
pathogens like bacteria, viruses and fungi cause several water
borne diseases like diarrhea, nausea, dysentery. In extreme
cases some pathogens may infect the lungs, skin, eyes,
nervous system, kidneys, or liver and the effects may be more
severe, chronic, or even fatal. Of them diarrhea caused by
E.coli is posing a heavy threat on adults as well as infants. It
produces a toxin that damages the lining of the intestines
resulting in hemorrhagic diseases [3,4]. The World Bank
estimated that 21% of communicable diseases in India are
related to unsafe water and diarrhoea alone causes more than
1,600 deaths daily in India [5]. Nearly 60% of infant
mortality can be linked to a water related infectious disease;
globally, diarrhoea is the third largest cause of morbidity and
the sixth largest cause of mortality, causing up to 2.2 million
deaths per year. Morbidity and mortality are the greatest
amongst children under five years of age [6,7]. Research has
been done extensively to remove harmful disease causing
pathogens and resulted in many conventional methods like
chlorination, filtration, ozonationetc., which can effectively
kill the pathogenic microorganisms, however the formation of
carcinogenic undesirable disinfection by-products (DBPs)
such as trihalomethanes (THMs), haloacetic acids and other
dissolved organic halogens limits their usage [8,9]. Also the
permissible level of E.coli in drinking water is zero colony
forming units per 100ml which may not be achieved by these
techniques.
Therefore there is an urgent requirement to
investigate innovative processes which can overcome these
e-ISSN: 2582-5208 International Research Journal of Modernization in Engineering Technology and Science
Volume:02/Issue:06/June -2020 www.irjmets.com
www.irjmets.com @International Research Journal of Modernization in Engineering, Technology and Science
[1326]
TCAD SIMULATION OF ALGAN/INALGAN/GAN HEMTS
(HIGH ELECTRON MOBILITY TRANSISTORS)
N. Ramkumar*1, Kotha S V Madhav*2, K. Karthik*3, S. Ruby*4, D. Mahesh*5
*1Assistant Professor, Department of Electronics and Communication Engineering,
Anil Neerukonda Institute of Technology & Sciences, Visakhapatnam, India.
*2,3,4,5 Students, Department of Electronics and Communication Engineering,
Anil Neerukonda Institute of Technology & Sciences, Visakhapatnam, India
ABSTRACT We report microwave and DC performance of a novel 50 nm Quaternary based AlGaN/InAlGaN/GaN (HEMTs) High
Electron Mobility Transistor with Al2O3 passivation and T-gate on SiC substrate. TCAD is used for simulating the
proposed HEMT structure. A peak drain current density(Ids) is shown at the regrown n++ GaN source/drain ohmic
contacts of 2.9 A/mm with low on-resistance 0.49 Ω.mm. A record power gain (fmax) and current gain cut-off
frequencies (ft) obtained are 425GHz and 310GHz respectively. These are achieved by substantial reduction in the
device extrinsic and intrinsic parasitic capacitance and resistances. Here AlGaN is used as back barrier-structure to the
7nm thin In0.13Al0.83Ga0.04N (Quaternary barrier) layer in order to compensate the short channel effects with 38V
improved breakdown voltage. For next generation, the prominent DC characteristic along with microwave characteristic
of proposed HEMT device is appropriate candidate for electronic high power millimeter wave applications.
Keywords: Quaternary barrier; double hetero-junction; millimeter wave; cut-off frequency; breakdown voltage
I. INTRODUCTION
The expedient performance of GaN based HEMTs such as low on resistance, high breakdown field, high current
density; high electron velocity, high power amplification and high thermal stability empowered the progress of high
power and high speed millimeter wave electronics and photonic applications [1-34]. Over the past two decades,
extensive research works has been carried out for significant improvements in operating frequency of the GaN-based
HEMT. Conventional AlGaN/GaN HEMT with 0.25 µm gate length shown its microwave performance f t/fmax of 82/103
GHz [15]. T. Palacio et. al. fabricated 100 nm AlGaN/GaN HEMT with InGaN back-barrier and the device shown
excellent ft/fmax of 153/230 GHz [16]. 150 nm recessed gate InAlN/GaN HEMT recorded ft/fmax of 70/105 GHz with 29
V breakdown voltage [17]. Dong Seup Lee et. al. reported ft/fmax of 245/13 GHz for 30 nm InAlN/GaN HEMT [18].
Fully passivtaed InAlN/GaN HEMT significantly improves the microwave performance ft/fmax of 205/220 GHz [19].
Jinwook W et. al. demonstrated high transconductance results from recessed gate InAlN/GaN with Al2O3 passivation
layer [20]. In spite of short channel effects, 30 nm gate length InAlN/GaN HEMT recorded ft/fmax of 373/28 GHz [21].
Lattice matched In0.17Al0.83N/GaN HEMTs demonstrated excellent high frequency performance than conventional
AlGaN/GaN HEMTs [17-21]. However, due to interface roughness scattering, improvement in 2-D electron gas
mobility in InAlN/GaN based HEMTs remains challenging [30] by immiscibility between AlN and InN. Existence of
narrower immiscibility, Quaternary barrier In0.16Al0.74Ga0.10N has been demonstrated high carrier mobility (μ> 1800
cm2/V · s) and high electron density (ns ~ 1.8 × 1013 cm−2) [22,23,24,25,29,32,33]. In recent years, the effort of nitride
researchers are directed towards lattice matched In0.16Al0.74Ga0.10N/AlN/GaN heterostructures. To obtain high ft/fmax
with simultaneous improvement in breakdown voltage for next generation high power millimeter wave electronics, it is
necessary to optimize the device structure for low gate resistance, parasitic capacitances and minimum gate leakage
current.
In this research work, a novel 50 nm T-gate lattice matched quaternary barrier In0.16Al0.74Ga0.10N/GaN HEMT is studied
and it’s DC and microwave characteristics are presented. Lg 50 nm InAlGaN/GaN HEMTs on SiC substrate is
exhibited a record ft/fmax of 310/425 GHz with simultaneous high output current density of (Ids) of 2.9 A/mm and
breakdown voltage of 48 V. AlGaN back barrier-structure along with a very thin 7nm InAlGaN barrier effectively
mitigates the short channel effect (DIBL= 80 mV/V) with improved breakdown voltage of 48 V
II. DEVICE STRUCTURE AND BANDGAP DIAGRAM In0.16Al0.74Ga0.10N/AlN/GaN/AlGaN double heterostructures on SiC schematic diagram is displayed in Fig.1 (a). The
proposed device made up of 7 nm In0.16Al0.74Ga0.10N quaternary barrier material, 1 nm wide bandgap AlN spacer layer
(6.02 eV), GaN channel and Al0.08Ga0.92N back-barrier. The drain and source regions are formed by Si doped n++ GaN
International Journal of Management, Technology And Engineering ISSN NO : 2249-7455
CODE.IO
M. Swathi, K. Bala Gupta, 's. Navya, "D. Ranjith, °P. Gopi Krishna
'Assistant Professor, 2.3,4. Sudent,
Department of Information Technology, Anil Neerukonda Institute of Technology and Sciences, Visakhapatnam, India
[email protected], kolluriu [email protected] sabbavarapu, 16,[email protected], "[email protected]. in,
patcha. 16.it(@anits.edu. in
Abstract
CODE.IO is an application which is used for providing grade for student's code. The
examiner can generate a custom input format depending on problem statement. Those
generated inputs are given to the code (uploaded by examiner) and corresponding outputs
are used to evaluate the code written by the Student. This helps the examiner to validate
the code easily and provide the grades based on the test cases passed. These testcases
check whether your solution addresses the problem including its various constraints, but
do not display the expected output of the testcase. For instance, the hidden testcases may
be defined to validate your coding logic against boundar)y values, error handling
scenarios, elc, Based on the number of testcases matched, the grade for each student is
provided and a report is generated.
Key Words: Constraints, Custom input, Python, Django, Automated Grading
1. Introduction The system Code.io is mainly developed to improve coding skill for students. Coding
is a life-long skill. It is a basic literacy in the digital age, and it is important for students to
understand and be able to work with and use the technology around them. For high level
information- oriented society, computer programming education is very important. In any
programming language, the coding progress can be measured by it's effectiveness and
efficiency of the logic used but not by the number of lines that the code has been written.
Generally, a code is defined as set of instructions executed by a machine according to the
user's input. A test case is an input given to a program and the output obtained from a
program. An Input/Output together known as testcase. In other words, a test case is a set
of conditions or variables under which a tester will determine whether a code under test
satisfies requirements or works correctly. The process of developing testcases can also
help find problems in the requirements or improve the algorithm of the code.
The testcase mainly consists of three parts. They are: (i) Input: These are the values
injected to the code for some processing according to the problem statement. (ii) Actual
Outpul: This is the output generated by your code. It may be correct or wrong. (ii)
Expected Output: This is the correct output which is expected by the machine to evaluate
your code. And the main feature of this system is providing an automatic grading facility
so that, it could reduce the work to the faculty from validating each and every student
code at the time of lab assessnments. Therefore, this system helps the students to inmprove
their coding skills and assess the students' performance and help them to learn
programming languages effectively and efticiently.
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Prof. P.PADMAJA Departrife i
Volume X, Issue I1, MARCH/2020
ad drzePepartment head ANITS. Visaks
OVER SPEED AND ALCOHOL DETECTION
SMS ALERT SYSTEM
ABSTRACT
With rising technologies and developed automobiles with high end motor vehicles with
increase horse power and accessible speed, it is easier than ever to come in contact with
accidents. People are able to drive recklessly, affecting the safety of common people.
Although speed limits and other prevention laws were implemented, road accidents
continue to happen every day. Some of the main contributing factors leading to motor
vehicle accidents are over speeding, rash driving and drunk driving.
The proposed work is to develop a device which controls accidents due to over speed, drunk
driving, rash driving on motor vehicles. This device will be able to detect over speed and
programmed to alert with a SMS. The device also includes an application which disables the
starting of the vehicle engine when alcohol consumption is detected. The device model is
designed using Arduino MEGA, Global system for Mobile communication(GSM), Global
positioning system(GPS), alcohol sensors.