ESDA6V1AW6 · 2015. 6. 4. · 30 40 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Power (W) T...
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WNMD2179 Will Semiconductor Ltd. 1 Oct, 2014 - Rev.1.0 WNMD2179 Dual N-Channel, 20V, 6.3A, Power MOSFET Descriptions The WNMD2179 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2179 is Pb-free. Features Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package TSOT-23-6L Applications Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging www.sh-willsemi.com TSOT-23-6L Pin configuration (Top view) 2179 = Device Code ND = Special Code Y = Year W =Week(A~z) Marking Order information Device Package Shipping WNMD2179-6/TR TSOT-23-6L 3000/Reel&Tape V DS (V) Rds(on) ( ) 0.0175@ V GS =4.5V 0.0195@ V GS =3.1V 0.0215@ V GS =2.5V 20 ESD Rating: 2000V HBM G1 6 D1/D2 5 G2 4 1 S1 2 D1/D2 3 S2 6 5 4 1 2 3 2179 NDYW
Transcript of ESDA6V1AW6 · 2015. 6. 4. · 30 40 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Power (W) T...
WNMD2179
Will Semiconductor Ltd. 1 Oct, 2014 - Rev.1.0
WNMD2179
Dual N-Channel, 20V, 6.3A, Power MOSFET
Descriptions
The WNMD2179 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2179 is Pb-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package TSOT-23-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
www.sh-willsemi.com
TSOT-23-6L
Pin configuration (Top view)
2179 = Device Code
ND = Special Code
Y = Year
W =Week(A~z)
Marking
Order information
Device Package Shipping
WNMD2179-6/TR TSOT-23-6L 3000/Reel&Tape
VDS (V) Rds(on) ( )0.0175@ VGS=4.5V
0.0195@ VGS=3.1V
0.0215@ VGS=2.5V20
ESD Rating: 2000V HBM
G1
6
D1/D2
5
G2
4
1S1
2D1/D2
3S2
6 5 4
1 2 3
2179NDYW
Absolute Maximum ratings
Parameter Symbol 10 s Steady State UnitDrain-Source Voltage VDS 20
Gate-Source Voltage VGS ±10V
TA=25°C 6.3 5.7Continuous Drain Current a
TA=70°CID
5.0 4.6A
TA=25°C 1.1 0.9Maximum Power Dissipation a
TA=70°CPD
0.7 0.6W
TA=25°C 5.8 5.2Continuous Drain Current b
TA=70°CID
4.6 4.1A
TA=25°C 0.9 0.7Maximum Power Dissipation b
TA=70°CPD
0.6 0.5W
Pulsed Drain Current c IDM 30 AOperating Junction Temperature TJ 150 °CLead Temperature TL 260 °CStorage Temperature Range Tstg -55 to 150 °C
Thermal resistance ratings
Single Operation Parameter Symbol Typical Maximum Unit
t 10 s 90 108Junction-to-Ambient Thermal Resistance a
Steady StateR JA
110 130
t 10 s 105 128Junction-to-Ambient Thermal Resistance b
Steady StateR JA
133 158
Junction-to-Case Thermal Resistance Steady State R JC 60 75
°C/W
Dual Operation t 10 s 94 112
Junction-to-Ambient Thermal Resistance aSteady State
R JA115 132
t 10 s 110 132Junction-to-Ambient Thermal Resistance b
Steady StateR JA
138 162
Junction-to-Case Thermal Resistance Steady State R JC 63 78
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
WNMD2179
Will Semiconductor Ltd. 2 Oct, 2014 - Rev.1.0
Parameter Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID
Zero Gate Voltage Drain Current IDSS VDS =16 V, VGS
Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±10V ±5 uA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250uA 0.5 0.7 1.0 V
VGS = 4.5V, ID = 6.3A
VGS = 3.1V, ID = 6.0ADrain-to-source On-resistance
VGS = 2.5V, ID = 5.5A RDS(on) m
Forward Transconductance gFS VDS = 5.0 V, ID = 6.3A 16 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance CISS 800
Output Capacitance COSS 108
Reverse Transfer Capacitance CRSS 93
pF
Total Gate Charge QG(TOT)
Threshold Gate Charge QG(TH)
Gate-to-Source Charge QGS
Gate-to-Drain Charge QGD
VGS = 4.5 V, VDS = 10 V,
ID = 6.3 A nC
SWITCHING CHARACTERISTICS
Turn-On Delay Time td(ON) 410
Rise Time tr 1200
Turn-Off Delay Time td(OFF) 6100
Fall Time tf
VGS = 4.5 V, VDS =10 V,
RL=2.0 , RG=6
3500
ns
BODY DIODE CHARACTERISTICS
Forward Voltage VSD VGS = 0 V, IS
= 250uA 20 V
= 0V 1 uA
= 1.0A 0.75 1.5 V
WNMD2179
Electronics Characteristics (Ta=25oC, unless otherwise noted)
Will Semiconductor Ltd. 3 Oct, 2014 - Rev.1.0
17.5 21
19.5 23
21.5 26
11
13
15
11.8
0.74
1.55
3.2
VGS = 0 V, f = 100kHz, VDS =
10 V
Typical Characteristics (Ta=25oC, unless otherwise noted)rwise noted)
Output characteristics Output characteristics
Transfer characteristics Transfer characteristics
0.0 0.5 1.0 1.5 2.0 2.5 3.00
5
10
15
T=25oC
T=125oCT=-50oC
I DS D
rain
to S
ourc
e C
urre
nt (A
)
VGS-Gate to Source Voltage
WNMD2179
Will Semiconductor Ltd. 4 Oct, 2014 - Rev.1.0
0 1 2 3 4 50
10
20
30V
GS=4.5V 3V 2.5V
VGS
=2V
I DS-D
rain
-to
-So
urc
e C
urr
en
t (A
)
VDS
-Drain-to-Source Voltage(V)
VGS
=1.5V
On-Resistance vs. Drain current
On-Resistance vs. Gate-to-Source voltage
0 5 10 15 20
16
18
20
22
24
26
RD
S(O
N)-R
eis
tan
ce(m
)
VGS
=4.5V
IDS
-Drain-to-Source Current(A)
VGS
=2.5V
2 4 6 8 1010
20
30
40
ID=-6.3A
R
DS
(ON
)-Re
ista
nc
e(m
)
VGS
-Gate to Source Voltage(V)
On-Resistance vs. Junction temperature
Threshold voltage vs. Temperature
-50 0 50 100 150
0.75
1.00
1.25
1.50
VGS
=4.5V
ID=6.3A
Temperature(C)
No
rma
lize
d O
n-R
es
ista
nc
e
-50 0 50 100 1500.4
0.6
0.8
1.0
1.2 ID=250uA
Temperature (C)
No
rmali
zed
Gate
Th
resh
old
Vo
ltag
e
Capacitance
Single pulse power
Body diode forward voltage
Safe operating power
Gate Charge Characteristics
0.2 0.4 0.6 0.8
0.4
0.8
1.2
1.6
2.0
0 2 4 6 8 10 12 14
200
400
600
800
1000
1200VGS=0Vf=100KHZ
Cin Cout Cres
C-C
apac
itanc
e(pF
)
VDS Drain to Source Voltage(V)
T=250C
T=1500C
I SD-S
ourc
e to
Dra
in C
urre
nt (A
)
VSD- Source to Drain Voltage (V)
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000Pulse Width (s)
Pow
er (W
)
TJ(Max)=150°CTA=25°C
0.1
1
10
100
0.1 1 10 100VDS (Volts)
I D (A
mps
)
10 s
100 s
10ms
1ms
DC
TJ(Max)=150°C, TA=25°C
100m
1s10s
RDS(ON)
limited
WNMD2179
Will Semiconductor Ltd. 5 Oct, 2014 - Rev.1.0
0 5 10 15
0
2
4
VDD
=10V ID=6.3A
VG
S-G
ate
-to
-so
urc
e V
olt
ag
e(V
)
Qg(nC)
Transient thermal response (Junction-to-Ambient)
10 3 10 2 1 10 60010 110 4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (sec)
Nor
mal
ized
Effe
ctiv
eTr
ansi
ent
The
rmal
Impe
danc
e
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 110�C/W
3. TJM TA = PDMZthJA(t)
t1t2
t1t2
Notes:
4. Surface Mounted
PDM
WNMD2179
Will Semiconductor Ltd. 6 Oct, 2014 - Rev.1.0
WNMD2179
Package outline dimensions
TSOT-23-6L
Will Semiconductor Ltd. 7 Oct, 2014 - Rev.1.0
Min Max Min MaxA --- 0.900 --- 0.035
A1 0.000 0.100 0.000 0.004
A2 0.700 0.800 0.028 0.031
b 0.350 0.500 0.014 0.020
c 0.080 0.200 0.003 0.008
D 2.820 3.020 0.111 0.119
E1 1.600 1.700 0.063 0.067
E 2.650 2.950 0.104 0.116
e
e1
L 0.300 0.600 0.012 0.024
θ 0° 8° 0° 8°
1.90（BSC） 0.075(BSC)
SymbolDimensions In Millimeters Dimensions In Inches
0.037(BSC)0.95（BSC）
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