2006 International Conference on Nanotechnology, April 26 ... 9... · 2006 International Conference...
Transcript of 2006 International Conference on Nanotechnology, April 26 ... 9... · 2006 International Conference...
2006 International Conference on
Nanotechnology, April 26-28, 2006
Atlanta, GA
Using a Defocused Argon Ion Beam to
Prepare Coated Paper Cross-Sections
J-M RodierProject ManagerSappi Fine Paper NA sappi
Presentation AgendaPresentation Agenda
• Background Cross-Section Preparation• Description of Non-Focused Technology• Sample Prep/Instrument Parameters• Images• Conclusion
Background
Cross-Section Preparation
• Freeze Fracture• Embedding• Focused Ion Beam
Freeze-Fracture
• Method– Use liquid nitrogen to freeze sample– Razor blade to cut sample
• Positive– Quick and easy
• Negatives– Difficult to obtain information– Physical contact
Embedding
• Method– Sample embedded in resin
• Usually 12-36 hrs– Cut using microtome
• Diamond• Glass knife
– Etch sample• Chemicals to etch resin from sample
Embedding
• Positives– Clean coating image– Large Areas (Montage)
• Negatives– Labor intensive– Physical contact the sample– Cannot observe
• Fiber layer without sample damage• Ink/Varnish/Coating Interface well• Coating packing due to resin
Focused Beam technology
• Published Reports• Positives
– Clean non-physical cut– No heat damage– Ability to prepare for other techniques
• Negatives– Small Area– Physically Manipulate sample– Equipment Costs
Defocused Ion Beam Technology
Defocused technology
• Argon Ion Beam (Non-contact)• Uses a mask to block beam• No foreign material required• Larger area than focused ion beam• Not labor intensive• Drawbacks
– Sample prep time 8-10 hours• Working on 3-6 hours
Sample Preparation
• Si Wafers needed as heat sink• Sandwich mode
– Lightweight samples– Burn through top wafer– Taped at far edge
• Offset Mode– Heavyweight samples– Burn through sample– Taped at far edge
Si/Sample Sandwich
Sample Holder
Mask and Sample Holder
Instrument Parameters
• JEOL SM-09010 Cross Section Polisher (CP) – Argon Beam 5-6 kV
• JEOL 5900 LV – BEI– Acceleration voltage adjusted for image
quality– Spot size adjusted for image quality
Images
Si Wafer
Paper
Si Wafer
Ink/Varnish
Coating
Fiber
Coating
Ink/Varnish
Conclusion
Conclusion
• De-focused technology useful• In situ analysis of base sheet and coating • Analysis of felt and wire side on same
sample • Not labor intensive • Negative
– Sample Throughput– Equipment Costs (Cheaper than FIB)
Acknowledgements
• Mike Robinson - coauthor• JEOL
Thank You PRESENTED BY
J-M RodierProject MangerSappi Fine Paper [email protected]
Questions