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    Unit-1Unit-1

    SemiconductorsSemiconductorsPhysicsPhysics

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    ELECTRONICS

    The wordElectronicsis derived fromElectron Mechanicswhich meansthestudy of the behavior of an electron underdifferent conditions of externally appliedfields.

    Electronics is a field of Science andEngineering, which deals with electronicdevices and their utilization.

    Electronic device is a device in whichconduction takes place by the movementof electrons through vacuum, gas orsemiconductors.

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    Applications of Electronics

    Communications & Entertainments

    Medical Sciences

    Defence Applications

    Industrial Applications

    Instrumentations

    July 2, 2013 Introduction 3

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    Communications andEntertainments

    Line CommunicationsTelegraphyTelephonyTelexTeleprinters

    Wireless CommunicationsRadio broadcastingTV broadcastingFacsimile (Radiophoto)

    Audio Systems

    Public Address (PA) systemsStereo amplifiersRecord playersTape recorders

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    Medical Sciences

    Electrocardiogram (ECG)

    Electrotherapy

    Modern X-rays

    July 2, 2013 Introduction 5

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    Defence Applications

    Radar guided missiles

    Coded communications

    July 2, 2013 Introduction 6

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    Industrial Applications

    Automatic control systems

    Heating and welding systems

    Electron Microscope

    Computers

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    InstrumentationInstrumentation

    Precision measuring instruments

    Cathode Ray Oscilloscope (CRO)

    Vacuum Tube Volt Meter (VTVM)

    Digital Volt Meter (DVM)Frequency Counters

    Signal generator

    pH meterStrain gauge

    etc.

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    Atomic Structure

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    Random Movement of Electronsin Aluminium atoms.

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    Atoms

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    Permissible Energy Levels(for an isolated hydrogen atom)

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    Types of Materials

    Conductors

    Semiconductors

    Insulators

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    Conductors Electrical conductivity is excellent. Concentration of free electrons is very

    large ~1028 electrons/metre3. Under the influence of an applied electric

    field the electrons may acquire additionalenergy and move into higher states.

    The conduction and the valence bandoverlaps with each other.

    Have positive temperature coefficient of

    resistance, i.e., resistance increases withincrease in temperature.

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    Insulators

    Very poor conductor of electricity.

    Concentration of free electrons is verysmall ~ 107 electrons/meter3.

    Large forbidden band gap separates filledvalence band from the vacant band.

    The energy which can be supplied to anelectron from an applied field is too small

    to carry the electrons from the filled tothe vacant band.

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    Semiconductors Conductivity is in between that of conductors

    and insulators. Concentration of free electrons is moderateand is in between that of conductors andinsulators.

    Width of the forbidden gap is relativelysmall~ 1 eV.

    At 0 K : Egfor Ge ~ 0.785 eV

    Egfor Si ~ 1.21 eV

    Band gap energy in a crystal is a function ofinteratomic spacing and hence dependssomewhat on temperature.

    Has negativetemperature coefficient ofresistance i.e. resistance decreases withJuly 2, 2013 Introduction 16

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    Energy Bands

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    Materials for Semiconductors

    Germanium and Silicon, which hastetravalent atoms are the two mostimportant semiconductors used in

    electronic devices.

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    Types of Semiconductors

    IntrinsicSemiconductor

    The semiconductorformed by pure

    tetravalent Siliconor Germanium isknown as theIntrinsic Semi-conductor. A semi-conductor is not

    truly intrinsicunless the impuritycontent is less thanone part impurity in100 million parts of

    semiconductor.

    ExtrinsicSemiconductor

    The semiconductorformed by deliberate

    doping of trivalent orpentavalent impuritiesin tetravalent Siliconor Germanium isknown as ExtrinsicSemiconductor.

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    Intrinsic Semiconductors

    Electrons and Holes in IntrinsicSemiconductors

    Covalent Bond in IntrinsicSemiconductor Crystal

    Generation of Electron-Hole Pair

    Effective Mass

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    Crystal Structure ofSemiconductors

    The valence electrons insemiconductors are not free towander about as in metal, rather

    are trapped in a bond betweentwo adjacent atoms.

    The crystal structure of

    tetravalent Germanium or Siliconcrystal consists of regularrepetition of a unit cell in threedimensions having the form of a

    tetrahedron with an atom atJuly 2, 2013 Semiconductors 22

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    Crystalline structure(Two dimensional representation)

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    Generation of Electron-HolePair

    At very low temperature (0 K)the crystal behaves like a perfectinsulator, since no free carriersof electricity are available.

    At room temperature some ofthe covalent bonds will bebroken because of the thermalenergy supplied to the crystal.

    An electron is dislodged and isfree to wander in a randomfashion throughout the crystal,

    just like electrons in a metal.

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    The energy required to breaksuch a covalent bond is about

    0.72 eV for Ge and 1.12 eV for Siat room temperature (300 K).

    When an electron breaks away,only 3 electrons are left around acore with +4 charge.

    This vacancy is called ahole.

    Hole is a vacancy in a covalent

    bond, which has +1 unit chargeassociated with it.

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    In an intrinsic semiconductor thenumber of holes is equal to the

    number of free electrons, i.e.,n =p = ni

    where n andp are the electron

    and hole concentrationrespectively and ni is called the

    intrinsic carrier concentration.

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    Since n1=

    n

    2, there is no net flow of

    electrons across the planeXY.

    There is no current due to randommovement of free electrons.

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    Contribution of holesto conductivity

    The importance of holes is thatthey serve as the carriers ofelectricity, comparable in

    effectiveness with free electron.When a bond is incomplete (a

    hole exists), it is relatively easyfor a valence electron in aneighboring atom to leave itscovalent bond to fill this hole.

    This leaves a hole in its initial

    position.July 2, 2013 Semiconductors 32

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    The hole in its new position, maynow be filled up by an electron

    of another bond and the hole willcorrespondingly move one morestep in the direction opposite to

    the motion of electron.Hence the hole effectively moves

    in the direction opposite to that

    of the electrons.

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    Hole as a Particle

    Hole is just a vacancy, having apositive charge.

    For convenience, we treat hole as a

    particle.Both the electron and hole have

    same amount of charge (e = 1.6

    10

    -19

    C).We associate with a hole, a mass

    called effective mass, though it ismeaningless.

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    In fact, quantum mechanics is used tospecify the motion of a conduction

    electron or a hole under the influenceof an external force.

    It is possible to treat the hole andelectron as imaginary charged

    particle with effective positivemasses mp and mn, respectively.

    Effective mass approximation

    removes quantum features of theproblem and allows us to useNewtons laws to determine theeffect of external forces on free

    electrons and holes in a crystal.July 2, 2013 Semiconductors 35

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    The effective mass of a hole ismore than that of an electron.

    That is,mp> mn

    Why ?

    Ans. The hole moves slower thanan electron, when same externalfield is applied.

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    Recombination ofElectrons and Holes

    Recombination is a process in whichthe free electrons in the conductionband jumps into the valence band tocombine with holes.

    In the process of recombination theelectron-hole pair is destroyed.The rate of recombination is

    approximately proportional to the

    product of electron concentration andhole concentration.In the recombination process the

    minimum energy released in the formof electromagnetic radiation is equal

    to the band gap.July 2, 2013 Semiconductors 37

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    While some electron hole pair is lostby recombination, new pairs are

    generated due to thermal excitation.For pure semiconductors at constant

    temperature the rate ofrecombination and the rate of

    generation of the electron-hole pairsare equal so that the electron andhole concentrations remain constantat their thermal equilibrium value.

    r = g

    If the temperature increases, thethermal equilibrium value of the

    electron and the hole concentrationJuly 2, 2013 Semiconductors 38

    Fermi Energy Level

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    Fermi Energy Level(In a Conductor)

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    The energy distribution ofelectrons in a conductor is as

    shown. Fermi energy level is the

    maximum energy that a free

    electron can have at 0 K, in aconductor.

    On raising the temperature, the

    total number of electrons remainthe same; but some electronshave energy higher than EF.

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    Fermi Energy Level(In a Semiconductor)

    It is defined as the energy thatcorresponds to the centre of gravity ofthe conduction electrons (in CB) and

    holes (in VB), weighted according totheir energies.

    Thus, in an intrinsic semiconductor it lies

    in the middle of the forbidden energygap.

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    Review

    Types of Semiconductors. Intrinsic Semiconductors.

    Crystalline structure.

    Generation of Electron-Hole Pair. Random Movement of Carriers.

    Hole as a Particle.

    Recombination of Electrons andHoles.

    Fermi Energy level.