1.Introduc Tion to Microwave Engineering

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    INTRODUCTION TO MICROWE ENGINEERING

     LECTURER: TRAN THI HUONG

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    Freuenc! "esi#nation4

    $/band +1+ / +12 )H'

    "/band 314 / %156 )H'

    /band 6176 / 713 )H'

    8/band 713 / +319 )H'

    :u/band +319 / +7 )H'

    :/band +7 / 3414 )H'

    :a/band 3416 / 9& )H'

    ;/band 6& / 26 )H'

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    Outline5

    Microwave Band

    Microwave Applications

    Differences between Audio and Microwave Amplifier 

    Phenomena at High Frequency

    Units

    Properties of Materials

    Modern Microwave ircuits!"ystem Design

    #ransmission $ine

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      $$ortunities %or Microwave a$$licatio

    6

    Antenna gain is proportional to the electrical si'e of the antenna More bandwidth can be reali'ed at higher frequencies higher At 4&& MH' += bandwidth * 4MH'

    4Mbps -binary phase shift >eying modulation.

    At 4& )H' += bandwidth * 4&&MH'

    4&&Mbps  Microwave signal travel by the line of sight and are not bend by t

    Possible for satellite and terrestrial communication lin> with h

    es

     

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      $$ortunities %or Microwave a$$li

    7

    #he radar cross section of a radar target is proportional to the targete

    microwave frequencies proper for radar system

    ;arious molecular@ atomic and nuclear resonances occur at microw

    variety of unique applications in

    #he area of basic science ,emote sensing

    Medical diagnostic and treatment

    Heating method

     

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    Microwave a$$lications

    8

    ellular phone 7&&!5&& MH'@ 319 )H' Microwave oven 319 )H'

    Police radar 8/band@ :/band

    Military radar 8@ :a@1

    ommunication lin>s "@ :u@ :a

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    Outline9

    Microwave Band

    Microwave Applications

    Differences between Audio and Microwave Amplifier 

    Phenomena at High Frequency

    Units

    Properties of Materials

    Modern Microwave ircuits!"ystem Design

    #ransmission $ine

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    Di%%erences )t*' Au"io an" Microwave A

    10

      Audio amplifier Freq range +&/3& :H'

    Power +&< more

    )ain 7&dB

     0oise Power line noise@ white noise

    Cnput impedance Usually high

    utput impedance low to drive 7@ +4ohm spea>ers

    "tability usually stable

    Microwave ampl

    Eample + to 9 )H'

    m<

    +&/%&dB

    "pecified in terms of ntemperature

    Must be matched to tr

    characteristic impedan

    Usually 6& ohm

    ;ery important

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    Outline12

    Microwave Band

    Microwave Applications

    Differences between Audio and Microwave Amplifier 

    Phenomena at High Frequency

    Units

    Properties of Materials

    Modern Microwave ircuits!"ystem Design

    #ransmission $ine

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    ,heno+ena at -i#h Freuenc!

    13

    Reflec!ion from an unma!c"ed load

    Mirror 

    Incident

    Reflected

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    ,heno+ena at hi#h %reuenc! &

    14

    #!anding wave$

     

    Device 1 Device 2

    Mirror Mirror  

    | Voltage |

    Large reflection

    | Voltage |

    No reflection

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    Outline15

    Microwave Band

    Microwave Applications

    Differences between Audio and Microwave Amplifier 

    Phenomena at High Frequency

    Units

    Properties of Materials

    Modern Microwave ircuits!"ystem Design

    #ransmission $ine

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    Units16

    %ime:nsec -nano second. +&/5

    s psec -pico second. +&/+3 s

    &ower: dBm -dB milliwatts. ( +&log-Power!+m

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    Units &Cont'(17

    'ol!age and #(parame!er$:3&log S ++   S ++*&1+ ///I /3& dB

    S 3+*+& ///I 3& dB gain

    *** Important *** dB is a relative value.

    )eng!":  meter@ cm@ millimeter 

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    Outline18

    Microwave Band

    Microwave Applications

    Differences between Audio and Microwave Amplifier 

    Phenomena at High Frequency

    Units

    Properties of Materials

    Modern Microwave ircuits!"ystem Design

    #ransmission $ine

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    Con"uctivities %or .o+e Materials19

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    ,h!sical Constants20

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    21

    Dielectric Constants an" /oss Tan

    l C "

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    Dielectric Constants an" /oss Tan

    22

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    ,ro$erties o% .o+e Microwave Ferrite Mat

    23

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    Mo"ern Microwave Circuits0.!ste+ De

    25

    +1 Analysis approimations and simple formula

    31 "imulations -most important.  HFSS simulation ircuit models

    EM model

    reate a physical model then simulate the EM interaction with the

    el

    %1  Fabrication and testingMicrostrip #$ and strip #$

     0etwor> analy'er 

    #D, -time/domain reflectometer.

    Antenna range

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     Trans+ission /ine e%%ects

    Frequency 3&H'/3& :H'

    Power level +/+&&<

    utput device "pea>er -convert audi

    o JelectricK signal to acoustic waves.

    Cmpedance 9 / 7 ohm Power Amplifier utput impedance o

    f power amplifiers ( low

    onnection between spea>er and amp

    lifier copper wire -3 conductors.

    re,uenc-: &ower level: 1

    u!pu! device: An!enn

    $ignal

    u!pu! impedance i$ u

    d !o a 50 o"m

    R Amplifier: u!pu!

    R amplifier mu$! e

    of %)

    +onnec!ion e!ween R

    d an!enna: coaial ca

    28

    Audio #-$!em R radio fre,uenc-

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     Trans+ission /ine e%%ect &Cont'( 

    Frequency 3&H'/3& :H'

    Power level +/+&&<

    utput device "pea>er -convert audi

    o JelectricK signal to acoustic waves.

    Cmpedance 9 / 7 ohm Power Amplifier utput impedance o

    f power amplifiers ( low

    onnection between spea>er and amp

    lifier copper wire -3 conductors.

    re,uenc-:

    &ower level: 1

    u!pu! device: An!enn

    $ignal

    u!pu! impedance i$ u

    d !o a 50 o"m

    R Amplifier: u!pu!

    R amplifier mu$! e

    of %)

    +onnec!ion e!ween R

    d an!enna: coaial ca

    29

    Audio #-$!em R radio fre,uenc-

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     TEM Trans+ission /ine31

    "pea>er wire -3 conductors.

    3&/3&@&&& H'

    arry audio signals

    oaial cable

    Up to 34 )H'

    Cnstrumentation@ com

    & (

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     TEM Trans+ission /ine &Cont'(32

    "trip $ine Microstrip $ine oplanar wave gui

    Microwave band

    Printed circuit board -PB.

    h " "

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    -i#her1or"er Mo"e Trans+ission /33

    ,ectangular wave guide ircular