1ch Small Package High Side Switch ICs 0.75A...

1ch Small Package High Side Switch ICs 0.75A Current Limit Latch Off High Side Switch ICs BD2220G BD2221G

General Description

BD2220G and BD2221G are low ON-Resistance N-Channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD2220G and BD2221G are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start.

Features

Low ON-Resistance (Typ 160mΩ) N-Channel MOSFET Built-in

Over-Current Detection (Output OFF-Latch Operation) Thermal Shutdown Open-Drain Fault Flag Output Flag Output Delay Under-Voltage Lockout Soft-Start Circuit Control Input Logic

Active-High : BD2220G Active-Low : BD2221G

Reverse Current Protection when Power Switch Off

Applications

USB hub in consumer appliances, PC, PC peripheral equipment, and so forth

Key Specifications Input Voltage Range: 2.7V to 5.5V ON-Resistance: 160mΩ(Typ) Over-Current Threshold: 0.5A (Min), 1.0A (Max) Standby Current: 0.01μA (Typ) Operating Temperature Range: -40°C to +85°C

Package W(Typ) D (Typ) H (Max)

Typical Application Circuit Lineup

Over-Current Threshold Control Input Logic Package Orderable Part Number Min Typ Max

0.5A - 1.0A High SSOP5 Reel of 3000 BD2220G-TR

0.5A - 1.0A Low SSOP5 Reel of 3000 BD2221G-TR

SSOP5 2.90mm x 2.80mm x 1.25mm

10kΩ~ 100kΩ

CL

CIN VIN

GND

EN

VOUT

/OC

5V (Typ.)

+

-

3.3V

5V(Typ)

10kΩ to 100kΩ

IN OUT

Product structure：Silicon monolithic integrated circuit This product has not designed protection against radioactive rays

1/22 www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111･14･001

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Datasheet

http://www.rohm.com/

BD2220G BD2221G Datasheet

Block Diagram Pin Configurations

IN

GND

EN

1

2

3 4

5

/OC

OUT

IN

GND

/EN

1

2

3 4

5

/OC

OUT

Pin Description

Pin No. Symbol I/O Function

1 IN - Switch input and the supply voltage for the IC.

2 GND - Ground

3 EN, /EN I Enable input. EN: High level input turns on the switch. (BD2220G) /EN: Low level input turns on the switch. (BD2221G)

4 /OC O Over-current notification terminal. Low level output during over-current or over-temperature condition. Open-drain fault flag output.

5 OUT O Switch output

BD2220G TOP VIEW

BD2221G TOP VIEW

Under-Voltage Lockout

Charge Pump

EN(/EN)

Delay Counter

Over-Current Detection

Thermal Shutdown

IN

/OC

GND

OUT

S Q

R


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Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Rating Unit

IN Supply Voltage VIN -0.3 to +6.0 V EN(/EN) Input Voltage VEN, V/EN -0.3 to +6.0 V /OC Voltage V/OC -0.3 to +6.0 V /OC Sink Current I/OC 5 mA OUT Voltage VOUT -0.3 to +6.0 V Storage Temperature Tstg -55 to +150 °C Power Dissipation Pd 0.67 (Note 1) W (Note 1) Mounted on 70mm x 70mm x 1.6mm glass epoxy board. Reduce 5.4mW per 1oC above 25oC. Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings.

Recommended Operating Conditions

Parameter Symbol Rating

Unit Min Typ Max

IN Operating Voltage VIN 2.7 5.0 5.5 V Operating Temperature Topr -40 - +85 °C

Electrical Characteristics

BD2220G (VIN= 5V, Ta= 25°C, unless otherwise specified.) DC Characteristics

Parameter Symbol Limit

Unit Conditions Min Typ Max

Operating Current IDD - 110 160 μA VEN = 5V VOUT = Open

Standby Current ISTB - 0.01 5 μA VEN = 0V VOUT = Open

EN Input Voltage VENH 2.0 - - V High Input VENL - - 0.8 V Low Input

EN Input Leakage IEN -1.0 +0.01 +1.0 μA VEN = 0V or 5V ON-Resistance RON - 160 210 mΩ IOUT = 50mA Switch Leak Current ILSW - - 1.0 μA VEN = 0V, VOUT = 0V Reverse Leak Current IREV - - 1.0 μA VOUT = 5.5V, VIN = 0V Over-Current Threshold ITH 0.5 - 1.0 A Short Circuit Output Current ISC 0.35 - - A VOUT = 0V, RMS /OC Output Low Voltage V/OC - - 0.4 V I/OC = 0.5mA

UVLO Threshold VTUVH 2.1 2.3 2.5 V VIN Increasing VTUVL 2.0 2.2 2.4 V VIN Decreasing

AC Characteristics



Output Rise Time tON1 - 1 6 ms RL = 20Ω Output Turn ON Time tON2 - 1.5 10 ms RL = 20Ω Output Fall Time tOFF1 - 1 20 μs RL = 20Ω Output Turn OFF Time tOFF2 - 3 40 μs RL = 20Ω /OC Delay Time t/OC 10 15 20 ms


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Electrical Characteristics – continued

BD2221G (VIN= 5V, Ta= 25°C, unless otherwise specified.) DC Characteristics



Operating Current IDD - 110 160 μA V/EN = 0V VOUT = Open

Standby Current ISTB - 0.01 5 μA V/EN = 5V VOUT = Open

/EN Input Voltage V/ENH 2.0 - - V High Input V/ENL - - 0.8 V Low Input

/EN Input Leakage I/EN -1.0 +0.01 +1.0 μA V/EN = 0V or 5V ON-Resistance RON - 160 210 mΩ IOUT = 50mA Switch Leak Current ILSW - - 1.0 μA V/EN = 0V, VOUT = 0V Reverse Leak Current IREV - - 1.0 μA VOUT = 5.5V, VIN = 0V Over-Current Threshold ITH 0.5 - 1.0 A Short Circuit Output Current ISC 0.35 - - A VOUT = 0V, RMS /OC Output Low Voltage V/OC - - 0.4 V I/OC = 0.5mA

UVLO Threshold VTUVH 2.1 2.3 2.5 V VIN Increasing VTUVL 2.0 2.2 2.4 V VIN Decreasing

AC Characteristics



Output Rise Time tON1 - 1 6 ms RL = 20Ω Output Turn ON Time tON2 - 1.5 10 ms RL = 20Ω Output Fall Time tOFF1 - 1 20 μs RL = 20Ω Output Turn OFF Time tOFF2 - 3 40 μs RL = 20Ω /OC Delay Time t/OC 10 15 20 ms


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Measurement Circuit

VIN

GND

EN(/EN)

VOUT

/OC

VIN

VEN(/EN)

A

1µF

VIN

GND

EN(/EN)

VOUT

/OC

VIN

VEN(/EN)

A

1µF RL

A. Operating Current B. EN,/EN Input Voltage, Output Rise / Fall Time

VIN

GND

EN(/EN)

VOUT

/OC

VIN

VEN(/EN)

A

1µF IOUT

10kΩ

VIN

GND

EN(/EN)

VOUT

/OC

VIN

VEN(/EN)

A

1µF

IOC

C. ON-Resistance, Over-Current Detection D. /OC Output Low Voltage

Figure 1. Measurement Circuit

Timing Diagram

TON1 TOFF1

90%

10% 10%

TON2 TOFF2

VENH VENL

90%

VEN

VOUT

tON1 tOFF1

90%

10% 10%

tON2 tOFF2

V/ENL V/ENH

90%

V/EN

VOUT

Figure 2. Output Rise / Fall Time (BD2220G)

Figure 3. Output Rise / Fall Time (BD2221G)

IN OUT IN OUT

IN OUT IN OUT

tON2 tOFF2

VEN

tON1 tOFF1


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Typical Performance Curves

Ope

ratin

g C

urre

nt :

I DD[μ

A]

Ope

ratin

g C

urre

nt :

I DD[μ

A]

Supply Voltage ; VIN[V] Ambient Temperature ; Ta[°C]

Stan

dby

Cur

rent

: I S

TB[μ

A]

Stan

dby

Cur

rent

: I S

TB[μ

A]

Supply Voltage ; VIN[V] Ambient Temperature ; Ta[°C]

0

20

40

60

80

100

120

140

2 3 4 5 6

Ta=25°C

Figure 4. Operating Current vs Supply Voltage (EN, /EN Enable)

0

20

40

60

80

100

120

140

-50 0 50 100

VIN=5.0V

Figure 5. Operating Current vs Ambient Temperature (EN, /EN Enable )

0.0

0.2

0.4

0.6

0.8

1.0

2 3 4 5 6

Ta=25°C

Figure 6. Standby Current vs Supply Voltage (EN, /EN Disable)

Figure 7. Standby Current vs Ambient Temperature (EN, /EN Disable)

0.0

0.2

0.4

0.6

0.8

1.0

-50 0 50 100

VIN=5.0V


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Typical Performance Curves - continued

0

50

100

150

200

250

2 3 4 5 6

Ta=25°C

Figure 10. ON-Resistance vs Supply Voltage

ON

-Res

ista

nce

: RO

N[m

Ω]

Supply Voltage ; VIN[V]

0

50

100

150

200

250

-50 0 50 100

VIN=5.0V

Figure 11. ON-Resistance vs Ambient Temperature

ON

-Res

ista

nce

: RO

N[m

Ω]

Ambient Temperature ; Ta[°C]


Figure 8. EN, /EN Input Voltage vs Supply Voltage

0.0

0.5

1.0

1.5

2.0

2 3 4 5 6

Ta=25°C

Low to High

High to Low

Enab

le In

put V

olta

ge :

V EN, V

/EN[V

]

Enab

le In

put V

olta

ge :

V EN, V

/EN[V

]


0.0

0.5

1.0

1.5

2.0

-50 0 50 100

VIN=5.0V Low to High

High to Low

Figure 9. EN, /EN Input Voltage vs Ambient Temperature


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Figure 12. Over-Current Threshold vs Supply Voltage

Ove

r-C

urre

nt T

hres

hold

: I T

H[A

]


0.5

0.6

0.7

0.8

0.9

1.0

2 3 4 5 6

Ta=25°C

Ove

r-C

urre

nt T

hres

hold

: I T

H[A

]


0.5

0.6

0.7

0.8

0.9

1.0

-50 0 50 100

VIN=5.0V

Figure 13. Over-Current Threshold vs Ambient Temperature

0

20

40

60

80

100

-50 0 50 100

Ta=25°C

Figure 14. /OC Output Low Voltage vs Supply Voltage


/OC

Out

put L

ow V

olta

ge :

V/O

C[m

V]

0

20

40

60

80

100

-50 0 50 100

VIN=5.0V

Figure 15. /OC Output Low Voltage vs Ambient Temperature


/OC

Out

put L

ow V

olta

ge :

V/O

C[m

V]


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Out

put R

ise

Tim

e : t

ON[m

s]


0.0

1.0

2.0

3.0

4.0

5.0

-50 0 50 100

VIN=5.0V

Figure 19. Output Rise Time vs Ambient Temperature

UVL

O H

yste

resi

s Vo

ltage

: V H

YS[V

]


0.0

0.2

0.4

0.6

0.8

1.0

-50 0 50 100

Figure 17. UVLO Hysteresis Voltage vs Ambient Temperature

Out

put R

ise

Tim

e : t

ON[m

s]


Figure 18. Output Rise Time vs Supply Voltage

0.0

1.0

2.0

3.0

4.0

5.0

2 3 4 5 6

Ta=25°C

Figure 16. UVLO Threshold Voltage vs Ambient Temperature

2.0

2.1

2.2

2.3

2.4

2.5

-50 0 50 100

VTUVH

VTUVL

UVL

O T

hres

hold

: V T

UV

H, V

TUV

L [V

]



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Out

put T

urn

ON

Tim

e : t

ON

2[ms]


0.0

1.0

2.0

3.0

4.0

5.0

2 3 4 5 6

Ta=25°C

Figure 20. Output Turn ON Time vs Supply Voltage

Out

put F

all T

ime

: tO

FF[µ

s]


0.0

1.0

2.0

3.0

4.0

5.0

2 3 4 5 6

Ta=25°C

Figure 22. Output Fall Time vs Supply Voltage

Out

put F

all T

ime

: tO

FF[µ

s]


0.0

1.0

2.0

3.0

4.0

5.0

-50 0 50 100

VIN=5.0V

Figure 23. Output Fall Time vs Ambient Temperature

Out

put T

urn

ON

Tim

e : t

ON

2[ms]


0.0

1.0

2.0

3.0

4.0

5.0

-50 0 50 100

VIN=5.0V

Figure 21. Output Turn ON Time vs Ambient Temperature


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0.0

1.0

2.0

3.0

4.0

5.0

6.0

2 3 4 5 6SUPPLY VOLTAGE : VIN[V]

TUR

N O

FF T

IME

: TO

FF2 [μ

s]

Ta=25°C

Out

put T

urn

OFF

Tim

e : t

OFF

2[µs]


0.0

1.0

2.0

3.0

4.0

5.0

6.0

-50 0 50 100AMBIENT TEMPERATURE : Ta[]

TUR

N O

FF T

IME

: TO

FF2 [μ

s]

VIN=5.0V

Out

put T

urn

OFF

Tim

e : t

OFF

2[µs]


Figure 24. Output Turn OFF Time vs Supply Voltage

Figure 25. Output Turn OFF Time vs Ambient Temperature

/OC

Del

ay T

ime

: t/O

C[m

s]


10

12

14

16

18

20

2 3 4 5 6

Ta=25°C

Figure 26. /OC Delay Time vs Supply Voltage

/OC

Del

ay T

ime

: t/O

C[m

s]


10

12

14

16

18

20

-50 0 50 100

VIN=5.0V

Figure 27. /OC Delay Time vs Ambient Temperature


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Typical Waveforms

Time (1ms/div.)

Figure 28. Output Rise Characteristic

VEN

(5V/div.)

V/OC

(5V/div.)

VOUT

(5V/div.)

IOUT

(0.5A/div.) VIN=5V

RL=20Ω

VEN

(5V/div.)

V/OC

(5V/div.)

VOUT

(5V/div.)

IOUT

(0.5A/div.)

VIN=5V

RL=20Ω

Time (2μs/div.)

Figure 29. Output Fall Characteristic

Time (1ms/div.)

Figure 30. Inrush Current Response

CL =47μF

CL =100μF

CL=220μF

(5V/div.) VEN

IOUT

(0.2A/div.)

V/OC

(5V/div.)

VIN=5V

RL=20Ω

Time (2ms/div.)

Figure 31. Over-Current Response Ramped Load

V/OC

(5V/div.)

VOUT

(5V/div.)

IOUT

(0.5A/div.) VIN=5V

1A/10ms


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Typical Waveforms - continued

Time (10ms/div.)

Figure 32. Over-Current Response Ramped Load

V/OC

(5V/div.)

VOUT

(5V/div.)

IOUT

(0.5A/div.)

VIN=5V 1A/50ms

Time (5ms/div.)

Figure 33. Over-Current Response Enable to Short-Circuit

VEN

(5V/div.)

V/OC

(5V/div.)

VOUT

(5V/div.)

IOUT

(0.5A/div.)

VIN=5V

Time (5ms/div.)

Figure 34. Over-Current Response 1Ω Load Connected at EN

V/OC

(5V/div.)

VOUT

(5V/div.)

IOUT (1A/div.)

VIN=5V

RL=1Ω

Time (10ms/div.)

Figure 35. UVLO Response Increasing VIN

VOUT

(5V/div.)

IOUT

(0.2A/div.)

VIN

(5V/div.)

RL=20Ω


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Typical Wave Forms - continued

VIN

(5V/div.)

VOUT

(5V/div.)

IOUT

(0.2A/div.)

RL=20Ω

Time (10ms/div.)

Figure 36. UVLO Response Decreasing VIN


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Typical Application Circuit

Controller

10kΩ~ 100kΩ

CL

CIN VIN

GND

EN(/EN)

VOUT

/OC

5V (Typ.)

Ferrite Beads

+

-

Application Information

When excessive current flows due to output short circuit or so, ringing occurs because of inductance between power source line and IC. This may cause bad effects on IC operations. In order to avoid this case, connect a bypass capacitor across IN terminal and GND terminal of IC. 1μF or higher is recommended. Pull up /OC output by a resistance value of 10kΩ to 100kΩ. Set up value which satisfies the application of either CL. This application circuit does not guarantee its operation. When using the circuit with changes to the external circuit constants, make sure to leave an adequate margin for external components including AC/DC characteristics as well as dispersion of the IC.

Functional Description

1. Switch Operation IN terminal and OUT terminal are connected to the drain and the source of switch MOSFET respectively. The IN terminal is also used as power source input to internal control circuit. When the switch is turned on from EN, /EN control input, the switch is bidirectional. IN terminal and OUT terminal are connected by a 160mΩ (Typ) switch. Therefore, when the potential of OUT terminal is higher than that of IN terminal, current flows from OUT terminal to IN terminal. On the other hand, when the switch is turned OFF, it is possible to prevent current from flowing reversely from OUT to IN since a parasitic diode between the drain and the source of switch MOSFET is not present,

2. Thermal Shutdown Circuit (TSD) If over-current would continue, the temperature of the IC would increase drastically. If the junction temperature were beyond 170°C (Typ) during the condition of over-current detection, thermal shutdown circuit operates and turns power switch off and outputs a fault flag (/OC). Then, when the junction temperature decreases lower than 150°C (Typ), power switch is turned on and fault flag (/OC) is cancelled. Unless the increase of the chip’s temperature is removed or the output of power switch is turned off, this operation repeats. Note: The thermal shutdown circuit operates when the switch is on (EN, /EN signal is active).

3. Over-Current Detection (OCD) The over-current detection circuit limits current (ISC) and outputs a fault flag (/OC) when current flowing in each MOSFET exceeds a specified value. There are three types of response against over-current. The over-current detection circuit works when the switch is on (EN, /EN signal is active). (1) When the switch is turned on while the output is in short circuit status

When the switch is turned on while the output is in short circuit status, the switch goes into current limit status immediately.

(2) When the output short circuits while the switch is on When the output short circuits or high-current load is connected while the switch is on, very large current flows until the over-current limit circuit reacts. When the current detection and limit circuit works, current limitation is carried out.

(3) When the output current increases gradually When the output current increases gradually, current limitation does not work until the output current exceeds the over-current detection value. When it exceeds the detection value, current limitation is carried out.

4. Under Voltage Lockout (UVLO)

UVLO circuit prevents the switch from turning on until the VIN exceeds 2.3V(Typ). If VIN drops below 2.2V(Typ) while the switch is still ON, then UVLO will shut off the power switch. UVLO has a hysteresis of 100mV(Typ). Note: Under voltage lockout circuit works when the switch is on (EN, /EN signal is active).

10kΩ to

100kΩ

5V(Typ)

IN OUT


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Switch Status

VIN

t/OC t/OC

ON OFF ON

Output Current

V TUVH V TUVL

FLAG Output

V EN

5. Fault Flag (/OC) Output

Fault flag output is an NMOS open drain output. At detection of over-current and/or thermal shutdown, the output level is low. Over-current detection has delay filter. This delay filter prevents current detection flags from being sent during instantaneous events such as inrush current at switch on or during hot plug.. If fault flag output is unused, /OC pin should be connected to open or ground line.

t/OC t/OC

ON OFF ON

Output Current

Switch Status

V EN

FLAG Output

Figure 37. Over-Current Shutdown Operation (Reset at Toggle of EN (BD2220G)

Figure 38. Over-Current Shutdown Operation (Reset at UVLO operation) (BD2220G)


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Power Dissipation (SSOP5 package)

Figure 39. Power Dissipation Curve (Pd-Ta Curve)

I/O Equivalence Circuit

Symbol Pin No. Equivalence circuit

EN (/EN) 3

EN (/EN)

OUT 5

VOUT

/OC 4

/OC

0

100

200

300

400

500

600

700

0 25 50 75 100 125 150

AMBIENT TEMPERATURE : Ta []

POW

ER D

ISSI

PATI

ON

: Pd

[mW

]

85

Po

wer

Dis

sipa

tion

: Pd[m

W]


70mm x 70mm x 1.6mm Glass Epoxy Board

OUT


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Operational Notes 1. Reverse Connection of Power Supply

Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply pins.

2. Power Supply Lines Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic capacitors.

3. Ground Voltage Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.

4. Ground Wiring Pattern

When using both small-signal and large-current ground traces, the two ground traces should be routed separately but connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal ground caused by large currents. Also ensure that the ground traces of external components do not cause variations on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.

5. Thermal Consideration

Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum rating, increase the board size and copper area to prevent exceeding the Pd rating.

6. Recommended Operating Conditions

These conditions represent a range within which the expected characteristics of the IC can be approximately obtained. The electrical characteristics are guaranteed under the conditions of each parameter.

7. In rush Current

When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing of connections.

8. Operation Under Strong Electromagnetic Field

Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.

9. Testing on Application Boards When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always be turned off completely before connecting or removing it from the test setup during the inspection process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage.

10. Inter-pin Short and Mounting Errors Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin. Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during assembly to name a few.


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Operational Notes - continued 11. Unused Input Pins

Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power supply or ground line.

12. Regarding the Input Pin of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode or transistor. For example (refer to figure below):

When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor.

Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided.

Figure 40. Example of monolithic IC structure

13. Ceramic Capacitor When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with temperature and the decrease in nominal capacitance due to DC bias and others.

14. Thermal Shutdown Circuit(TSD)

This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation. Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat damage.

15. Thermal design

Perform thermal design in which there are adequate margins by taking into account the power dissipation (Pd) in actual states of use.

N NP+ P

N NP+

P Substrate

GND

N P+

N NP+N P

P Substrate

GND GND

Parasitic Elements

Pin A

Pin A

Pin B Pin B

B C

EParasitic Elements

GNDParasitic Elements

C B

E

Transistor (NPN)Resistor

N Regionclose-by

Parasitic Elements


TSZ02201-0E3E0H300190-1-2 21.Aug.2014 Rev.003



Ordering Information

Marking Diagram

Part Number Part Number Marking

BD2220G DX

BD2221G DY

B D 2 2 2 0 G - T R Part Number Package

G: SSOP5

Packaging and forming specification TR: Embossed tape and reel

B D 2 2 2 1 G - T R Part Number Package

G: SSOP5

Packaging and forming specification TR: Embossed tape and reel

Part Number Marking

SSOP5 (TOP VIEW)

LOT Number


TSZ02201-0E3E0H300190-1-2 21.Aug.2014 Rev.003



Physical Dimension, Tape and Reel Information Package Name SSOP5


TSZ02201-0E3E0H300190-1-2 21.Aug.2014 Rev.003



Revision History

Date Revision Changes

11.Mar.2013 001 New Release

25.Jun.2013 002 Modified Y-axis of figure 4. Changed character color from RED to BLOCK of figure 16.

21.Aug.2014 003 Applied the ROHM Standard Style and improved understandability.


TSZ02201-0E3E0H300190-1-2 21.Aug.2014 Rev.003


DatasheetDatasheet

Notice – GE Rev.002© 2013 ROHM Co., Ltd. All rights reserved.

Notice Precaution on using ROHM Products

1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications.

(Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA

CLASSⅢ CLASSⅢ

CLASSⅡb CLASSⅢ

CLASSⅣ CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

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[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,

H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of

flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering

[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability.

7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual

ambient temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability. 2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the

ROHM representative in advance. For details, please refer to ROHM Mounting specification

DatasheetDatasheet

Notice – GE Rev.002© 2013 ROHM Co., Ltd. All rights reserved.

Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

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third parties with respect to the information contained in this document.

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ROHM, its affiliated companies or third parties.

DatasheetDatasheet

Notice – WE Rev.001© 2014 ROHM Co., Ltd. All rights reserved.

General Precaution 1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.

ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s representative.

3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all

information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or concerning such information.

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