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(12) EUROPEAN PATENT APPLICATIONpublished in accordance with Art. 153(4) EPC

(43) Date of publication: 08.04.2015 Bulletin 2015/15

(21) Application number: 13796612.3

(22) Date of filing: 04.04.2013

(51) Int Cl.:H01L 27/14 (2006.01) H01L 23/12 (2006.01)

H01L 23/28 (2006.01)

(86) International application number: PCT/JP2013/060343

(87) International publication number: WO 2013/179765 (05.12.2013 Gazette 2013/49)

(84) Designated Contracting States: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TRDesignated Extension States: BA ME

(30) Priority: 30.05.2012 JP 2012123223

(71) Applicant: Olympus CorporationShibuya-kuTokyo 151-0072 (JP)

(72) Inventors: • IGARASHI, Takatoshi

Shibuya-ku, Tokyo 151-0072 (JP)• FUJIMORI, Noriyuki

Shibuya-ku, Tokyo 151-0072 (JP)• YOSHIDA, Kazuhiro

Shibuya-ku, Tokyo 151-0072 (JP)

(74) Representative: Winter, Brandl, Fürniss, Hübner, Röss, Kaiser, Polte - Partnerschaft mbBPatent- und Rechtsanwaltskanzlei Alois-Steinecker-Strasse 2285354 Freising (DE)

(54) IMAGING DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

(57) A method for producing an image pickup appa-ratus 10 includes: a process of cutting an image pickupchip substrate 30W where a plurality of light receivingsections 31 are formed on a first main face 30SA andelectrode pads 32 are formed around each of the lightreceiving sections 31 to fabricate a plurality of image pick-up chips 30; a process of bonding the first main face30SA of image pickup chips 30 determined as non-de-fective products to a glass wafer 20W different from theimage pickup chip substrate 30W in at least either sizeor shape via a transparent adhesive layer 41 to fabricatea joined wafer 40W; a process of filling a sealing member42 among the plurality of image pickup chips 30 bondedto the joined wafer 40W; a machining process includinga process of machining the joined wafer 40W to thin athickness of the joined wafer 30W, from a second mainface 30SB side to flatten a machining surface and a proc-ess of forming through-hole interconnections 33, each ofwhich is connected to each of the electrode pads 32; aprocess of forming a plurality of external connection elec-trodes 34, each of which is connected to each of theelectrode pads 32 via each of the through-hole intercon-nections 33, on the second main face 30SB; and a proc-ess of cutting and individualizing the joined wafer 40W.

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Description

Technical Field

[0001] The present invention relates to a method forproducing an image pickup apparatus and a method forproducing a semiconductor apparatus, the methods in-cluding a process of cutting a joined wafer where a plu-rality of image pickup chips (semiconductor chips) arebonded to a support substrate.

Background Art

[0002] A chip size package (CSP) method has beenused for downsizing semiconductor apparatuses. In theCSP method, in a semiconductor chip where a semicon-ductor circuit section is formed on a first main face, athrough-hole interconnection is formed up to a secondmain face, and an external connection terminal on thesecond main face is connected to an interconnectionboard.[0003] Here, in a small image pickup apparatus, atransparent support member that protects a light receiv-ing section that is the semiconductor circuit section isjoined to a first main face of an image pickup chip onwhich the light receiving section is formed. A wafer levelchip size package (WL-CSP) method has been used forcollectively fabricating a plurality of image pickup appa-ratuses. In the WL-CSP method, an image pickup chipsubstrate on which a plurality of light receiving sectionsare formed, and a transparent support substrate are sub-jected to machining such as formation of through-holeinterconnections in a joined wafer state in which the im-age pickup chip substrate and the transparent supportsubstrate are bonded via an adhesive layer. After that,the joined wafer is individualized into individual imagepickup apparatuses.[0004] In the conventional WL-CSP method, however,when the image pickup chip substrate has a low yieldrate of image pickup chips, an image pickup chip with adefective light receiving section is also machined as animage pickup apparatus. Thus, a production cost increas-es. Also, along with an increase in a diameter of a sem-iconductor wafer, all machining equipment needs to becompatible with a large diameter. Thus, an equipmentinvestment amount increases, and a production cost in-creases, so that productivity is lowered.[0005] Note that Japanese Patent Application Laid-Open Publication No. 2011-243596 discloses a methodfor producing a package component by a CSP methodin which semiconductor chips mounted on a mountingface of a silicon wafer are sealed by a sealing resin, andthe silicon wafer is then polished or the like from an op-posite face to the mounting face, and further individual-ized into individual package components.[0006] That is, in the above production method, thesemiconductor chips are not machined, but the siliconwafer is machined to become an interposer for the sem-

iconductor chips.

Summary of Invention

Technical Problem

[0007] An object of embodiments of the present inven-tion is to provide a method for producing an image pickupapparatus with high productivity and a method for pro-ducing a semiconductor apparatus with high productivity.

Solution to Problem

[0008] A method for producing an image pickup appa-ratus of an embodiment of the present invention includes:a process of cutting an image pickup chip substratewhere a plurality of light receiving sections are formedon a first main face and electrode pads are formed aroundeach of the light receiving sections to fabricate a pluralityof image pickup chips; a process of bonding the first mainface of each of the image pickup chips determined asnon-defective products to a transparent support sub-strate different from the image pickup chip substrate inat least either size or shape via a transparent adhesivelayer to fabricate a joined wafer; a process of filling asealing member among the plurality of image pickupchips bonded to the joined wafer; a machining processincluding a process of machining the joined wafer to thina thickness of the joined wafer, from a second main faceside to flatten a machining surface and a process of form-ing through-hole interconnections, each of which is con-nected to each of the electrode pads; a process of forminga plurality of external connection electrodes, each ofwhich is connected to each of the electrode pads via eachof the through-hole interconnections, on the second mainface; and a process of cutting and individualizing thejoined wafer.

Brief Description of the Drawings

[0009]

Fig. 1 is a sectional view of an image pickup appa-ratus of an embodiment;Fig. 2 is a perspective view for explaining a methodfor producing the image pickup apparatus of the em-bodiment;Fig. 3 is a flowchart for explaining the method forproducing the image pickup apparatus of the em-bodiment;Fig. 4 is a plan view and a partially enlarged view ofa transparent substrate of the image pickup appara-tus of the embodiment;Fig. 5 is a perspective view of an image pickup chipof the image pickup apparatus of the embodiment;Fig. 6A is a sectional view for explaining the methodfor producing the image pickup apparatus of the em-bodiment;

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Fig. 6B is a sectional view for explaining the methodfor producing the image pickup apparatus of the em-bodiment;Fig. 6C is a sectional view for explaining the methodfor producing the image pickup apparatus of the em-bodiment;Fig. 6D is a sectional view for explaining the methodfor producing the image pickup apparatus of the em-bodiment;Fig. 6E is a sectional view for explaining the methodfor producing the image pickup apparatus of the em-bodiment;Fig. 6F is a sectional view for explaining the methodfor producing the image pickup apparatus of the em-bodiment;Fig. 6G is a sectional view for explaining the methodfor producing the image pickup apparatus of the em-bodiment;Fig. 7 is a partially enlarged view of a transparentsubstrate of an image pickup apparatus of Modifica-tion 1;Fig. 8 is a plan view for explaining a method for pro-ducing an image pickup apparatus of Modification 2;Fig. 9A is a plan view for explaining a method forproducing an image pickup apparatus of Modifica-tion 3;Fig. 9B is a sectional view for explaining the methodfor producing the image pickup apparatus of Modifi-cation 3;Fig. 10A is a plan view for explaining a method forproducing an image pickup apparatus of Modifica-tion 4;Fig. 10B is a sectional view for explaining the methodfor producing the image pickup apparatus of Modifi-cation 4;Fig. 11A is a sectional view for explaining a methodfor producing an image pickup apparatus of Modifi-cation 5;Fig. 11B is a sectional view for explaining the methodfor producing the image pickup apparatus of Modifi-cation 5;Fig. 11C is a sectional view for explaining the methodfor producing the image pickup apparatus of Modifi-cation 5;Fig. 11D is a sectional view for explaining the methodfor producing the image pickup apparatus of Modifi-cation 5;Fig. 11E is a sectional view for explaining the methodfor producing the image pickup apparatus of Modifi-cation 5;Fig. 11F is a sectional view for explaining the methodfor producing the image pickup apparatus of Modifi-cation 5;Fig. 12A is a sectional view for explaining a methodfor producing an image pickup apparatus of Modifi-cation 6;Fig. 12B is a sectional view for explaining the methodfor producing the image pickup apparatus of Modifi-

cation 6;Fig. 12C is a sectional view for explaining the methodfor producing the image pickup apparatus of Modifi-cation 6; andFig. 12D is a sectional view for explaining the methodfor producing the image pickup apparatus of Modifi-cation 6.

Best Mode for Carrying Out the Invention

<Embodiment>

[0010] As shown in Fig. 1, in an image pickup appara-tus 10 that is a semiconductor apparatus, an image pick-up chip (imager chip) 30, and a cover glass 20 that is asupport substrate section (transparent flat plate section)are bonded via an adhesive layer 41 made of a transpar-ent resin. A light receiving section 31 that is a semicon-ductor circuit section is formed on a first main face 30SAof the image pickup chip 30, and a plurality of electrodepads 32 connected to the light receiving section 31 byan interconnection (not shown) are further formed aroundthe light receiving section 31 of the first main face 30SA.The electrode pad 32 is connected to an external con-nection electrode 34 and an external connection terminal35 on a second main face 30SB via a through-hole inter-connection 33. That is, the plurality of electrode pads 32supply electricity to the light receiving section 31, andtransmit and receive input and output signals to and fromthe light receiving section 31. Moreover, outer peripheralportions of the image pickup chip 30 and outer peripheralportions of the adhesive layer 41 are covered with a seal-ing member 42 with no gap therebetween.[0011] That is, in the image pickup apparatus 10, aplan-view dimension of the cover glass 20 is larger thana plan-view dimension of the image pickup chip 30. Thisis because the image pickup apparatus 10 is fabricatedby cutting (individualizing) a joined wafer 40W where aplurality of image pickup chips 30 are bonded to a glasswafer 20W, which is a transparent support substrate thatbecomes the cover glass 20, away from each other by apredetermined length via the adhesive layer 41 as shownin Fig. 2. As described below, on the glass wafer 20W,an alignment mark 21 for arranging each of the imagepickup chips 30 at a predetermined position is formed.That is, since the glass wafer 20W is transparent, thealignment mark (first alignment mark) 21 and an align-ment mark (second alignment mark) 36 (see Fig. 5) onthe image pickup chip 30 can be aligned with each otherfrom an opposite face to a face where the alignment mark21 is formed.[0012] Next, a method for producing the image pickupapparatus 10 of the embodiment is described in detailbased on a flowchart in Fig. 3.

<Step 10> Glass wafer fabricating process

[0013] As shown in Fig. 4, the alignment marks 21 for

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arranging the image pickup chips 30 at predeterminedpositions are formed on the glass wafer 20W that is thetransparent support substrate. Note that an image pickupchip arrangement region 30S is indicated by a brokenline for the sake of description in Fig. 4. The glass wafer20W that is cut to become the cover glass 20 only needsto be transparent in a wavelength band of light for imagepickup. For example, borosilicate glass, quartz glass, orsingle crystal sapphire is used.[0014] Note that alignment marks 22 and alignmentmarks 23 are formed at the same time as formation ofthe alignment marks 21. The alignment marks 22 areused for dicing at a time of individualization, and the align-ment marks 23 are used for machining such as formationof the through-hole interconnection 33 in the image pick-up chip 30. The alignment marks 21 and the like areformed by, for example, performing patterning by photo-lithography after forming a metal layer of Al or the like onan entire face. It is preferable that two alignment marksbe provided for one time of positioning processing for therespective alignment marks so as to perform accuratepositioning. Note that the alignment marks 21 and thelike may be also formed by partially etching the glasswafer 20W.[0015] Note that a back face of the glass wafer 20W(the opposite face to the face where the alignment marks21 are formed), which is not machined in following proc-esses, may be covered with a photoresist or the like tobe protected.

<Step 11> Image pickup chip fabricating process

[0016] The plurality of light receiving sections 31 thatare the semiconductor circuit sections, the plurality ofelectrode pads 32 connected to each of the light receivingsections 31, and the plurality of alignment marks 36 areformed on the first main face 30SA of a semiconductorwafer such as a silicon wafer by a known semiconductorprocess, so that an image pickup chip substrate 30W(see Fig. 2) is fabricated. By cutting the image pickupchip substrate (semiconductor chip substrate) 30W, theplurality of image pickup chips (semiconductor chips) 30shown in Fig. 5 are fabricated.[0017] Sizes of the image pickup chip substrate andthe glass wafer 20W are selected according to availableproduction equipment or the like depending on a formand specifications etc. of the image pickup apparatus tobe produced. Also, the image pickup chip substrate andthe glass wafer 20W may be set to be in different sizes.For example, even when the image pickup chips areformed from a substrate having a large diameter of 12-inch (300-mm) ϕ, or from a still larger substrate, the in-dividualized image pickup chips 30 are re-arrayed (bond-ed) on the glass wafer 20W of 8-inch (200-mm) ϕ, andsubjected to machining. Accordingly, it becomes possi-ble to produce the image pickup apparatus by equipmentfor 8-inch (200-mm) ϕ without using equipment or thelike compatible with a large-diameter wafer. Moreover, a

substrate and a wafer of different shapes, for example,the image pickup chip substrate of 8-inch (200-mm) ϕand the glass wafer 20W of 6-inch (150-mm) squares,may be also used depending on equipment and appara-tuses, etc. As described above, since the image pickupchip substrate and the glass wafer 20W of suitable sizesor shapes for available production equipment or the like(a production apparatus, a jig and a tool, etc.) can beused, the image pickup apparatus can be produced byeffectively utilizing existing equipment or the like.[0018] In following processes, only the image pickupchips 30 determined as non-defective products in an in-spection process are used. That is, "defective chips" oth-er than the non-defective products are not used in thefollowing processes. Thus, even when a yield rate of theimage pickup chips 30 of the image pickup chip substrate30W is low, a decrease in yield rate of the image pickupchips obtained by re-arraying and re-machining the im-age pickup chips is not caused. Note that it is preferableto perform an inspection for determining defectivenessof the image pickup chips on the image pickup chips 30in a state of the image pickup chip substrate 30W in viewof work efficiency although the inspection may be per-formed on each of the individual image pickup chips 30in an individualized state.[0019] The alignment marks 36 correspond to thealignment marks 21 on the glass wafer 20W. As shownin Fig. 5, the alignment marks 36 are preferably formedrespectively on outer peripheral portions facing each oth-er with a center of the image pickup chip 30 therebe-tween. By previously forming the alignment marks on theglass wafer 20W and the image pickup chip 30, the imagepickup chip 30 can be automatically placed with high pre-cision by using a mounting apparatus.[0020] Also, a step portion 37 is formed in the outerperipheral portions of the first main face 30SA of the im-age pickup chip 30. The step portion 37 is fabricated bydicing the image pickup chip substrate 30W by step cut-ting. The image pickup chip 30 with the step portion 37can reduce a length L with an adjacent chip so as toprevent spread (a fillet) of an adhesive 41L to an outerside of the image pickup chip 30 when bonded to theglass wafer 20W. A micro lens group may be also dis-posed on the light receiving section 31.

<Step S12> Bonding process

[0021] As shown in Fig. 6A, the plurality of image pick-up chips 30 are bonded to the glass wafer 20W awayfrom each other by the predetermined length L to fabri-cate the joined wafer 40W. That is, the plurality of imagepickup chips 30 formed on the image pickup chip sub-strate 30W on predetermined array conditions are thenre-arrayed on the glass wafer 20W after cutting.[0022] The length L needs to be longer than a thicknessof a dicing blade used in a dicing process described be-low. However, if the length L is too long, the number ofimage pickup apparatuses that can be fabricated from

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the single glass wafer 20W is decreased. At a same time,the sealing member has a larger volume in a sealingmember filling process described below, and a curingshrinkage stress becomes larger, so that a crack is easilygenerated. Therefore, the length L is preferably 15m mor more and 500 mm or less, which is slightly longer thanthe thickness of the dicing blade.[0023] Also, by setting the length L to a constant valueamong all of the image pickup chips 30, workability canbe improved, and uniform filling of the sealing memberis enabled in the sealing member filling process de-scribed below. The crack caused by unevenness of thecuring shrinkage stress can be thereby prevented.[0024] For example, the adhesive 41L in a liquid formis first applied in an appropriate amount to five positionsof the image pickup chip arrangement region 30S of theglass wafer 20W. The image pickup chip arrangementregion 30S can be grasped by the two alignment marks21 arranged on a diagonal line. For example, a dispens-ing method of pushing out a solution from a distal-endnozzle of a dispenser and applying the solution is usedas an application method.[0025] As the adhesive 41L, a BCB (benzocy-clobutene) resin, an epoxy-based resin, or a silicone-based resin etc., which satisfies such properties that theadhesive has high transparency (for example, a trans-mittance at visible wavelengths is 90% or more), has highadhesive strength, and is not deteriorated by heat or thelike in subsequent processes, is used.[0026] The image pickup chip 30 is then bonded to theglass wafer 20W in a state in which the first alignmentmarks 21 on the glass wafer 20W and the second align-ment marks 36 on the first main face 30SA of the imagepickup chip 30 are aligned with each other by using, forexample, a flip chip bonder. The first alignment marks 21and the second alignment marks 36 are set so as to beeasily aligned with each other. For example, the firstalignment mark 21 has a cross shape as shown in Fig.4, and the second alignment mark 36 is composed offour squares as shown in Fig. 5.[0027] Note that a reference mark may be previouslyformed on the glass wafer 20W without forming the align-ment marks exclusive for the respective image pickupchips, and the image pickup chips 30 may be arrangedat a predetermined pitch based on the reference mark.A throughput can be raised by using the above method.Also, alignment may be performed by using a pattern ofthe electrode pads 32 or the like formed on the imagepickup chip 30 instead of the second alignment marks 36.[0028] The liquid adhesive 41 L is cured in a state inwhich the alignment marks are aligned with each other,and becomes the adhesive layer 41. By completely cur-ing the liquid adhesive 41L while pressing the secondmain face of the image pickup chip at a predeterminedpressure by a wafer-shaped pressing jig, parallelism be-tween the main face of the image pickup chip and themain face of the glass wafer 20W is increased.[0029] As a method for curing the adhesive 41L, any

of a thermal curing method, a UV curing method, the UVcuring method + the thermal curing method, the UV cur-ing method + a moisture curing method, and a room tem-perature curing method etc. may be employed dependingon the resin as long as desired properties are satisfied.By using a flip chip bonder including means for curingthe adhesive 41L, such as a heating section or an UVirradiation section, the arrangement of the image pickupchip 30 at a predetermined position, and the curing ofthe adhesive 41L can be performed at a same time.[0030] Note that attention needs to be paid when theadhesive 41L where voids are easily generated by rapidcuring is used although the adhesive 41L may be com-pletely cured by the flip chip bonder. In this case, it ispreferable that, for example, when the adhesive 41L iscured by the flip chip bonder, the adhesive 41 L is semi-cured to an extent where the image pickup chip 30 dis-posed at a predetermined position does not move tocause displacement, and after the plurality of image pick-up chips 30 are disposed on the glass wafer 20W, theadhesive 41L is completely cured at a time and formedinto the adhesive layer 41.

<Step S13> Sealing member filling process

[0031] As shown in Fig. 6B, a sealing resin 42L in aliquid form that is filled into a gap between the pluralityof image pickup chips 30 disposed on the glass wafer20W by, for example, a dispensing method is cured tobecome the sealing member 42. The sealing resin 42Lmay be also poured into the gap instead of the dispensingmethod.[0032] By setting the arrangement length L betweenthe plurality of image pickup chips 30 to 15 mm or moreand 500 mm or less, the sealing member can be filledinto the gap between the plurality of image pickup chips30 by a capillary tube phenomenon. Note that a regionwhere vertexes of the plurality of image pickup chips 30face each other tends to have a small height (thickness)when filled with the sealing resin 42L. Therefore, afterthe sealing resin is cured once, the sealing resin may beapplied again only to the portion where the vertexes ofthe plurality of image pickup chips 30 face each other.[0033] The sealing member 42 preferably has a lowmoisture vapor transmission rate so as to improve hu-midity resistance of the image pickup apparatus 10, andis difficult to deteriorate by heat or plasma in subsequentprocesses. For example, a BCB resin or polyimide isused. Note that the sealing member 42 may be made ofthe same material as or a different material from the ad-hesive layer 41.[0034] Also, the sealing member 42 preferably has afunction as a light shielding member that prevents en-trance of external light into the light receiving section. Tothis end, even when the sealing member 42 is made ofthe same resin as the adhesive layer 41, the resin ispreferably used by mixing a light shielding material suchas a dye or a black pigment therein. Note that a non-

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conductive material is used when the pigment or the likeis used since the sealing member 42 needs to be aninsulator.[0035] A thickness of the sealing member 42, namely,a height of the filling only needs to be larger than a thick-ness of the image pickup chip 30 after thinning in step S14. That is, it is not necessary to completely fill the spacebetween the plurality of image pickup chips 30 with thesealing member 42 before the thinning machining. Con-versely, the sealing member 42 may protrude from thespace between the image pickup chips 30.[0036] Note that it is preferable not to perform rapidheating or rapid cooling in the curing of the sealing resin42L in order to prevent the crack occurrence due to theshrinkage stress when the sealing resin 42L is cured.Also, it is preferable that the sealing resin 42L be de-foamed in vacuum before curing, or is cured in vacuumin order to prevent the occurrence of voids.[0037] Note that the sealing member 42 is not limitedto the cured liquid resin. For example, a sheet-like resinmember may be cured after filling the space between theimage pickup chips 30 wile embedding the image pickupchips 30 by vacuum hot pressing or vacuum laminating.

<Step S14> Image pickup chip machining process

[0038] As shown in Fig. 6C, the joined wafer 40W isthinned, so that the second main face 30SB side of theimage pickup chip 30 is flattened. That is, a back grindingprocess and a CMP (chemical mechanical polishing)process are performed from the second main face 30SBside, and a machining surface is flattened.[0039] In the back grinding process, a diamond wheelcalled a back grinding wheel is used. The CMP processis performed for reducing surface roughness of a surfacegrinded in the back grinding process.[0040] Note that when a surface of the joined wafer40W has large irregularities after being filled with the seal-ing member, preprocessing by another means is prefer-ably performed before the back grinding process. Forexample, as the preprocessing, the sealing member 42protruding from the gap between the image pickup chips30 is shaved by a blade.[0041] Note that dishing, which forms a recess in acenter portion of the surface of the sealing member 42,may occur by the back grinding process and the CMPprocess. However, since the recessed portion is removedin the dicing process, there occurs no problem.[0042] The second main face 30SB of the image pickupchip 30 and the surface of the sealing member 42 on thejoined wafer 40W after thinning machining form a flatface. For the joined wafer 40W in which the machiningsurface has been flattened, a similar process to that of anormal semiconductor wafer can be performed unlike awafer having an uneven surface.[0043] That is, as shown in Fig. 6D, a through-hole via33S for forming the through-hole interconnection 33 thatis connected to the electrode pad 32 formed on the first

main face 30SA of the image pickup chip 30 is formedby the normal semiconductor wafer process. To form thethrough-hole via, an etching mask 39 having an openingin a region immediately above each of the electrode pads32 is formed on the image pickup chips 30 and the sealingmember 42. The etching mask also serves as a protectivelayer for protecting the image pickup chips 30 and thesealing member 42 from chemicals and plasma used ina subsequent process. For example, the silicon oxidefilm or the silicon nitride film is used as the etching mask39. Since the film formation can be performed at low tem-perature as the method for forming the etching mask 39,and no damage is caused on the semiconductor circuitsection or the like formed on the image pickup chip 30,plasma CVD is preferably used.[0044] Note that the alignment marks 23 for formingthe through-hole interconnection, which are previouslyformed on the glass wafer 20W, are used for alignmentof a photo mask used when a patterning mask (notshown) for forming the opening in the etching mask 39is formed.[0045] The through-hole via 33 S reaching the elec-trode pad 32 is formed by wet etching using an alkalisolution such as KOH or TMAH, or dry etching by an ICP-RIE method or the like. Note that the through-hole via33S may be also formed by a physical machining methodsuch as laser machining.[0046] As shown in Fig. 6E, the through-hole intercon-nection 33 composed of a conductor is formed in an innerportion of the through-hole via 33 S after an insulatinglayer (not shown) is formed on a wall face etc. of thethrough-hole via 335. Then, after the etching mask 39 isremoved, the external connection electrode 34 connect-ed to the through-hole interconnection 33 is formed onthe second main face 30SB of the image pickup chip 30.Furthermore, the projecting external connection terminal35 is disposed on the external connection electrode 34.[0047] Note that a plating process may be used in thethrough-hole interconnection forming process, and a sol-der ball etc. may be used as the external connection ter-minal 35.

<Step S15> Individualizing process (Dicing process)

[0048] A plurality of image pickup apparatuses 10 arefabricated from the single joined wafer 40W by an indi-vidualizing process of cutting the joined wafer 40W.[0049] For cutting, a two-stage dicing method shownin Figs. 6F and 6G is preferable. That is, after the joinedwafer 40W is half-cut to about 10 to 200 mm from a sur-face of the glass wafer 20W (an upper side in the draw-ings), the glass wafer 20W is subjected to full-cut dicing,so that a crack occurrence due to a stress and strippingof the sealing member 42 can be prevented. Moreover,in the two-stage dicing method, a blade type (a bondmaterial, an abrasive grain diameter, a degree of con-centration) and machining conditions (a feed speed, arotation speed) suitable for resin are used for dicing the

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sealing member 42, and a blade type and machining con-ditions suitable for glass are used for dicing the glasswafer 20W. A machining quality (resin burrs, chipping ofglass, and delamination of a resin layer) can be therebyimproved. Also, step cutting by which a step is formed inend portions of the individualized image pickup chips 30may be performed by setting the blade for resin to a largerthickness than the blade for glass.[0050] Also, the glass wafer 20W may be subjected tofull-cut dicing by blade dicing for glass or laser dicing,and thereby individualized after removing the sealingmember 42 on a dicing line by laser dicing or etching.[0051] In alignment of dicing, the alignment marks 22firstly formed on the glass wafer 20W are used. Note that,instead of the alignment marks 22, an alignment markfor dicing may be formed on the second main face 30SBof the image pickup chip 30 or on the sealing resin be-tween the image pickup chips 30 in the through-hole in-terconnection forming process or the like.[0052] In the production method of the embodiment,even when the image pickup chip substrate 30W has alow yield rate of image pickup devices, the joined wafer40W is fabricated by using only the non-defective imagepickup chips 30. Therefore, the defective chip is not pro-duced into the image pickup apparatus, so that the imagepickup apparatus 10 can be produced at low cost, andproductivity is high.[0053] Also, in the production method of the embodi-ment, the image pickup apparatus can be produced byusing the joined wafer 40W with a predetermined diam-eter regardless of the diameter of the image pickup chipsubstrate 30W. Since machining equipment compatiblewith a large diameter is unrequired, productivity is high.[0054] Moreover, since the image pickup chip with alarge thickness before being machined is bonded to theglass wafer 20W, the image pickup chip is easily handled.That is, the image pickup chip that is thinned for formingthe through-hole interconnection is easily damaged, andeasily deformed by a stress during bonding or the like.However, in the production method of the embodiment,the image pickup chip in a thick state can be bonded tothe glass wafer 20W.[0055] Also, since the support substrate is the trans-parent glass wafer 20W, alignment using the alignmentmarks can be performed from the opposite face to theimage pickup chip bonded face as shown in Fig. 2.[0056] Also, since the chip arrangement length is setto a constant value, it is easy to fill the sealing resin 42L,thereby preventing the crack in the sealing resin 42L.Thus, a production yield rate is high.[0057] The image pickup chip 30 and the sealing mem-ber 42 can be treated as a single wafer by making theouter face of the image pickup chip 30 and the outer faceof the sealing member 42 flush with each other by theCMP. Thus, the semiconductor wafer process can beperformed on a chip-shaped component, and high-pre-cision and high-density machining can be performed.[0058] The image pickup apparatus 10 includes the

image pickup chip 30 that is the semiconductor chipwhere the light receiving section 31 that is the semicon-ductor circuit section is formed on the first main face30SA, the cover glass 20 that is the support substratesection having a larger plan-view dimension than the im-age pickup chip 30, the transparent adhesive layer 41that bonds the first main face 30SA of the image pickupchip 30 and the image pickup chip 30, and the sealingmember 42 that covers a side face of the image pickupchip 30 and a side face of the adhesive layer 41, and ismade of an insulating material having a same outer di-mension (plan-view dimension) as the cover glass 20.[0059] That is, the side face of the image pickup chip30 is covered with the sealing member 42, and the imagepickup chip 30 is not exposed outside. Therefore, theimage pickup apparatus 10 has excellent electrical insu-lating properties and humidity resistance.[0060] Note that a functional member may be furtheradded to the image pickup apparatus 10 of the aboveembodiment. For example, an objective lens unit may bejoined to the opposite face to the face of the glass wafer20W where the image pickup chip 30 is bonded in align-ment with the image pickup chip 30. Also, a digital signalprocessor (DSP) chip for processing an image pickupsignal may be joined to the second main face 30SB ofthe image pickup chip 30.[0061] A backside irradiation-type image pickup appa-ratus may be also produced through processes of bond-ing an interconnection layer side of the image pickup chip30 to the support substrate, filling the sealing resin intothe gap between the image pickup chips 30, thinning theimage pickup chip 30 to about 3 mm to expose the lightreceiving section 31, thereafter forming a color filter anda micro lens on the light receiving section 31, and remov-ing a silicon layer on the electrode to expose the elec-trode.[0062] Also, the semiconductor chip is not limited tothe image pickup chip, and any type, such as generalsemiconductor chips, various sensors or actuators, maybe employed. The semiconductor apparatus to be pro-duced is also not limited to the image pickup apparatus.

<Modifications>

[0063] Next, methods for producing image pickup ap-paratuses 10A to 10F of Modifications 1 to 6 of the em-bodiment of the present invention are described. Sincethe methods for producing the image pickup apparatuses10A to 10F are similar to the method for producing theimage pickup apparatus 10 and have the same effects,the same constituent elements are assigned the samereference numerals, and description thereof is omitted.

<Modification 1>

[0064] The method for producing the image pickup ap-paratus 10A of Modification 1 is characterized in align-ment marks and the like formed on the glass wafer 20W.

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As shown in Fig. 7, when the alignment marks 21 areformed, displacement evaluation marks 24, adhesive fil-let evaluation marks 25 and a light shielding film 27 areformed at the same time.[0065] An amount of displacement of the image pickupchips 30 can be measured from an opposite face of theglass wafer 20W by the displacement evaluation marks24. If the amount of displacement is large, position ad-justment can be performed to reduce the defectiveness.It is also possible to measure an amount of spread of theadhesive 41L protruding from a bonding face, that is, aportion referred to as a so-called fillet, by the adhesivefillet evaluation marks 25. In a case of excess or deficien-cy of the spread of the fillet, an amount of adhesive to besupplied can be adjusted to reduce the defectiveness.The light shielding film 27 prevents entrance of unnec-essary light to the image pickup chips 30.[0066] Note that the image pickup apparatus 10A onlyneeds to have any of the marks 24, the marks 25 andthe light shielding film 27 according to its specificationsand the like.

<Modification 2>

[0067] In the method for producing the image pickupapparatus 10B of Modification 2, as shown in Fig. 8, pluralkinds of image pickup chips 30B1, 30B2 and 30B3 havingdifferent chip sizes (plan view dimensions and thickness-es) are bonded to the one glass wafer 20W, and pluralkinds of image pickup apparatuses 10B are fabricatedfrom one joined wafer 40WB. Otherwise, plural kinds ofimage pickup chips with a same size and different pixelsizes etc. may be bonded to the single glass wafer 20Wto fabricate plural kinds of image pickup apparatuses10B. Since the production method of Modification 2makes it possible to collectively produce diversified mod-els of image pickup apparatuses 10B from the singlejoined wafer 40WB, the method is suitable for diversifiedsmall-quantity production.[0068] Note that, in a case of bonding chips with dif-ferent sizes to the single glass wafer 20W, the dicingprocess can be performed easily by collectively disposingimage pickup chips with the same size in a predeterminedregion.[0069] Note that, in the case of bonding chips with dif-ferent sizes to the single glass wafer 20W also, it is pref-erable that the displacement length L between the imagepickup chips be a constant value. This is for the purposeof improving workability in the filling process. Also, sincethe sealing resin 42L can be uniformly filled, it is possibleto prevent crack occurrence on the sealing member 42due to uneven stress.[0070] Note that, by changing the kind of the adhesive41L for each kind of the image pickup chip 30, it is pos-sible to change a refractive index of the adhesive layer41 according to a refractive index of microlens materialor use either high-reliability adhesive or low-reliability butinexpensive adhesive etc. according to a required relia-

bility level.[0071] Furthermore, function chips other than imagepickup chips may be bonded to the glass wafer 20W. Asexamples of the function chip, a process evaluation chip,a DSP chip having functions required for outputting animage from the image pickup chip 30 and the like can begiven.[0072] The process evaluation chip is given, for exam-ple, a function of evaluating an amount of etching for athrough-hole via, an amount of etching for an oxide film,interconnection resistance, interconnection capacity, in-terconnection inductance or plasma damage.[0073] By connecting the DSP chip and the image pick-up chip 30, which are bonded to the glass wafer 20Wadjoining each other, via interconnection, image outputevaluation of the image pickup chip 30 can be performedin a wafer state.[0074] Note that dummy chips 30B1D, 30B2D and30B3D are arranged on the outer peripheral portion ofthe joined wafer 40WB. Since the volume of the sealingresin 42L on the outer peripheral portion of the wafer isreduced by arranging the dummy chip 30B1D etc., crackoccurrence can be prevented.[0075] Furthermore, successive projecting portions(dam) 49 made of resin are formed on a most outer pe-riphery of the joined wafer 40WB, for example, by thedispensing method. Therefore, it does not happen thatliquid resin, which is to be a sealing member, protrudesoutside the cover glass 20WB or flows to a back face.[0076] A position where an opening of the etchingmask of the through-hole via 33S is to be formed is im-mediately under the electrode pads 32 of the image pick-up chip 30. When different kinds of image pickup chips30 are arranged on the glass wafer, the size, positionand pitch of the through-hole via 33S are designed ac-cording to the size, position and pitch of the electrodepad 32 of each image pickup chip 30.[0077] When the image pickup chips 30 having differ-ent depths from back faces thereof to back faces of theelectrode pads mixedly exist, it is desirable that the open-ing of the protective layer (the etching mask 39) providedfor such image pickup chips 30 that the depth to the backface of the pad is short is designed small so that thethrough-hole via 33S with a desired size can be obtainedaccording to horizontal-direction spread at a time of etch-ing.[0078] When different kinds of image pickup chips 30are arranged in the wafer, a different inspection is per-formed for each image pickup chip 30 with the use of aprobe card corresponding to the image pickup chip 30.

<Modification 3>

[0079] As shown in Figs. 9A and 9B, in the method forproducing the image pickup apparatus 10C of Modifica-tion 3, an adhesive 41LC disposed on a glass wafer20WC is patterned to be in substantially the same shapeas the image pickup chip arrangement region 30S. For

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example, the adhesive 41LC is patterned by photolithog-raphy after application of a photosensitive resin. As forthe application, a liquid adhesive may be spin-coated, ora film-type adhesive may be laminated. Then, the imagepickup chips 30 are bonded to the glass wafer 20WC viathe patterned adhesive 41LC by thermocompressionbonding, and the joined wafer 40WC bonded via an ad-hesive layer 41C is fabricated.[0080] The production method of Modification 3 makesit possible to perform production in a shorter time periodthan a production method in which an adhesive is ar-ranged at each of a lot of positions corresponding to therespective image pickup chips 30 before placing the im-age pickup chips at the positions. Since the adhesive41LC does not exist among the image pickup chips 30,heat is not easily transmitted in a horizontal direction ac-cordingly, and it does not happen that, at a time of thermalcuring of the image pickup chip 30, the uncured adhesive41LC of adjoining image pickup chips are cured.[0081] Note that a region where vertexes of the imagepickup chips 30 face each other tends to have a smallheight (thickness) when filled with the sealing resin 42L.Therefore, it is preferable that post patterns 41CP by thepatterned adhesive 41LC be disposed as shown in Fig.9A.[0082] A dam for preventing the sealing resin from flow-ing out may be formed on the outer peripheral portion ofthe wafer by patterning the adhesive 40LC. Alignmentmarks for positioning with the image pickup chips maybe formed by patterning the adhesive 40LC.

<Modification 4>

[0083] As shown in Figs. 10A and 10B, in the methodfor producing the image pickup apparatus 10D of Modi-fication 4, an adhesive 41LD disposed on a glass wafer20WD is patterned to be in a frame shape. That is, theadhesive 41LD is in a frame shape with a width between25 mm and 50 mm along the outer peripheral portion ofthe light receiving section. Therefore, in the image pickupapparatus 10D, the light receiving section 31 on which amicrolens (not shown) is disposed is in contact with acavity (cavity portion) 38.[0084] Since an outer peripheral interface of the mic-rolens on the light receiving section 31 is in contact withthe cavity 38 with a refractive index smaller than that ofan adhesive layer 41D, a light collection effect of the mi-crolens is high. Therefore, the sensitivity of the imagepickup apparatus 10D is higher than that of the imagepickup apparatus 10C. Such a cavity structure can bealso realized by forming recessed portions at positionscorresponding to the light receiving sections of the imagepickup chips 30 on the glass wafer 20W.[0085] Note that diversified production is realized bycausing the image pickup apparatus 10D having the cav-ity 38 and the image pickup apparatus 10C not havingthe cavity 38 to mixedly exist on one joined wafer 40WD.

<Modification 5>

[0086] As shown in Fig. 11A, in the method for produc-ing the image pickup apparatus 10E of Modification 5,when the image pickup apparatus 10C is produced, aframe-like groove 26 is formed by, for example, a dicingblade in outer peripheral portions around the respectiveimage pickup chip arrangement regions 30S of a glasswafer 20WE before the bonding process. The groove 26may be formed by etching. At the same time, the firstalignment marks 21 and the like may be formed.[0087] As shown in Figs. 11B and 11C, the image pick-up chips 30 are heated and pressurized in an alignedstate and bonded to the glass wafer 20WE by using, forexample, a flip chip bonder. In the image pickup appa-ratus 10E, an excess amount of the adhesive 41L flowsinto the groove 26. Therefore, a fillet is not spread hori-zontally (a main face parallel direction) or vertically (amain face perpendicular direction). Since the fillet is notspread horizontally, a lot of image pickup apparatuses10E can be fabricated from a single joined wafer 40WEby reducing the arrangement length L between the imagepickup chips 30.[0088] Also, as shown in Figs. 11D to 11F, since thefillet of the adhesive 41L does not spread vertically, thesealing member 42 is surely filled up to the outer periph-eral portions of the image pickup chip 30 in the sealingmember filling process in the image pickup apparatus10E. Since a resin having a higher sealing effect thanthat of the adhesive layer 41 can be used for the sealingmember 42, reliability of the image pickup apparatus 10Eis higher than that of the image pickup apparatus 10which has a possibility that the adhesive layer 41 is ex-posed on an outer face due to a fillet creeping up.[0089] Note that it is preferable to form the frame-likegroove 26 so that inner-side plan view dimensions there-of are smaller than plan view dimensions of the imagepickup chip 30. This is because the sealing member 42covers the outer peripheral portions of the first main faces30SA of the image pickup chips 30 when the sealingmember 42 is filled, and adhesion and sealing effects areimproved by an anchor effect.[0090] It is also preferable to curve a bottom surfaceof a bottom portion of the groove 26 using a shape of thedicing blade as shown in Fig. 11A. This is because, if thebottom portion of the groove 26 is rectangular, voids oc-cur between the adhesive 41L flown in and corners ofthe groove 26, and reliability may be reduced.[0091] It is also preferable that a thermal expansioncoefficient of the sealing member 42 existing on an upperside inside the groove 26 be smaller than a thermal ex-pansion coefficient of the adhesive layer 41 existing ona lower side. This corresponds to a fact that a thermalexpansion coefficient of the image pickup chips 30 madeof silicon and forming an upper-side wall face of thegroove 26 is smaller than that of the cover glass 20 madeof glass and forming a lower-side wall face of the groove26. That is, by causing a magnitude relationship between

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thermal expansion coefficients of glass and silicon to bethe same as a magnitude relationship between the ther-mal expansion coefficients of the adhesive layer 41 andthe sealing member 42, it becomes difficult for the adhe-sive layer 41 and the sealing member 42 to come off fromthe groove 26 even if transformation due to thermal ex-pansion occurs.[0092] Note that, if the groove 26 of the glass wafer20WE is formed by a dicing blade, linear cutting scarsare left on the wall face of the groove 26. The cuttingscars have an effect of diffusing light and reducing re-flection. Therefore, even if a side face of the cover glass20 is close to the light receiving sections 31, a flare doesnot easily occur.

<Modification 6>

[0093] As shown in Fig. 12A, in the method for produc-ing the image pickup apparatus 10F of Modification 6,the second main faces 30SB of the plurality of imagepickup chips 30 are bonded to a temporary support sub-strate 20WT, which is a second support substrate, via anadhesive 41LF for temporary bonding. The temporarysupport substrate 20WT may be made of the same glassas that of the glass wafer 20W but does not need to betransparent. The adhesive 41LF is a temporary adhesivein which the adhesive strength is weakened by heat, ul-traviolet rays, warm water, a solvent or the like.[0094] Alignment marks for positioning with the imagepickup chips 30 and alignment marks for positioning withthe glass wafer 20W are formed on the temporary supportsubstrate 20WT. Note that it is also possible to formmarks for positioning on a back face of the temporarysupport substrate 20WT and perform positioning with theimage pickup chips 30 using the marks.[0095] In a case of performing positioning of the imagepickup chips 30 by recognizing the alignment marksformed on the temporary support substrate 20WTthrough the adhesive layer 41LF, it is preferable that theadhesive layer 41F be highly transparent. As for illumi-nation, it is easy to recognize an image by using ringillumination makes.[0096] As shown in Fig. 12B, the first main faces 30SAof the plurality of image pickup chips 30 bonded to thetemporary support substrate 20WT are collectively bond-ed to the glass wafer 20W via the adhesive 41L. That is,positioning and bonding of the temporary support sub-strate 20WT and the glass wafer 20W is performed withthe use of a wafer aligner and a wafer bonder.[0097] In a case where it takes much time for the ad-hesive 41L to cure, if the image pickup chips 30 are bond-ed one by one, it requires a long time period to bond allthe image pickup chips 30. In the method for producingthe image pickup apparatus 10F of Modification 6, how-ever, it is possible to shorten the time period, and pro-ductivity is high.[0098] Furthermore, when the image pickup chips 30are thermal-cured and bonded on the adhesive 41L ap-

plied on a whole surface of the glass wafer 20W one byone, it may happen that even the adhesive 41L of adjoin-ing image pickup chip arrangement regions 30S alsocure, and adjoining chips cannot be bonded. In the meth-od for producing the image pickup apparatus 10F of Mod-ification 6, however, such a problem does not occur.[0099] Furthermore, since the plurality of image pickupchips 30 are simultaneously pressed onto the glass wafer20W by the temporary support substrate 20WT, inclina-tion of main faces of the bonded image pickup chips 30relative to a main face of the glass wafer 20W can beuniform.[0100] As shown in Fig. 12C, spaces among the imagepickup chips 30 are sealed with the sealing member 42.That is, a space between the temporary support sub-strate 20WT and the glass wafer 20W is filled with thesealing resin 42L.[0101] The filling of the sealing resin 42L may be per-formed after separating the temporary support substrate20WT. By performing the filling before separating thetemporary support substrate 20WT, however, it does nothappen that the sealing member 42 protrudes on the sec-ond main faces 30SB of the image pickup chips 30, andit is easy to perform a subsequent polishing process be-cause the second main faces 30SB of the image pickupchips 30 and a surface of the sealing member 42 areflattened without unevenness.[0102] As for filling the sealing resin 42L, openings ona side face of a joined wafer 40WF excluding one openingare covered. Then, by decompressing the space to befilled with the sealing member 42 and releasing pressurein a state that the openings on the side face are soakedin the sealing resin 42L stored in a container, the sealingresin 42L is absorbed.[0103] Note that it is also possible to apply the adhesive41L thick on the glass wafer 20W so that the spacesamong the image pickup chips 30 are filled with the ad-hesive 41L applied thick when the image pickup chips30 are bonded. That is, in this case, the adhesive 41Lhas a function of the sealing resin 42L also.[0104] As shown in Fig. 12D, by separating the tem-porary support substrate 20WT, the joined wafer 40W isfabricated. A subsequent process is similar to that of Fig.6D etc. already described.[0105] Since the methods for producing the imagepickup apparatus of the above embodiment and modifi-cations make it possible to produce an ultra-small andhighly reliable image pickup apparatus, the methods canbe used particularly as a method for producing an imagepickup apparatus disposed at a distal end portion of anelectronic endoscope or in a capsule endoscope.[0106] The present invention is not limited to the afore-mentioned embodiments, and various changes, modifi-cations etc. can be made therein without departing fromthe scope of the present invention.[0107] This application is filed claiming the prioritybased on Japanese Patent Application No. 2012-123223filed on May 30, 2012 in Japan, the disclosure of which

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is incorporated in the specification, the claims, and thedrawings of this application.

Claims

1. A method for producing an image pickup apparatus,the method comprising:

a process of cutting an image pickup chip sub-strate where a plurality of light receiving sectionsare formed on a first main face and electrodepads are formed around each of the light receiv-ing sections to fabricate a plurality of image pick-up chips;a process of bonding the first main face of eachof the image pickup chips determined as non-defective products to a transparent support sub-strate different from the image pickup chip sub-strate in at least either size or shape via a trans-parent adhesive layer to fabricate a joined wafer;a process of filling a sealing member among theplurality of image pickup chips bonded to thejoined wafer;a machining process comprising a process ofmachining the joined wafer to thin a thicknessof the joined wafer, from a second main faceside to flatten a machining surface and a processof forming through-hole interconnections, eachof which is connected to each of the electrodepads;a process of forming a plurality of external con-nection electrodes, each of which is connectedto each of the electrode pads via each of thethrough-hole interconnections, on the secondmain face; anda process of cutting and individualizing thejoined wafer.

2. A method for producing a semiconductor apparatus,the method comprising:

a process of cutting a semiconductor chip sub-strate where a plurality of semiconductor circuitsections are formed on a first main face and elec-trode pads are formed around each of the sem-iconductor circuit sections to fabricate a pluralityof semiconductor chips;a process of bonding the first main face of eachof the semiconductor chips to a support sub-strate via an adhesive layer to fabricate a joinedwafer;a process of filling a sealing member among theplurality of semiconductor chips bonded to thejoined wafer;a process of machining the joined wafer from asecond main face side; anda process of cutting the joined wafer.

3. The method for producing a semiconductor appara-tus according to claim 2, wherein semiconductorchips determined as non-defective products in aninspection are bonded to the support substrate.

4. The method for producing a semiconductor appara-tus according to claim 3, wherein the machining proc-ess comprises a process of machining the joined wa-fer to thin a thickness of the joined wafer to flatten amachining surface and a process of forming a plu-rality of external connection electrodes, each ofwhich is connected to each of the electrode pads,on the second main surface.

5. The method for producing a semiconductor appara-tus according to claim 4, wherein the machining proc-ess comprises a process of forming through-hole in-terconnections, each of which connects each of theelectrode pads and each of the external connectionelectrodes before the process of forming the externalconnection electrodes.

6. The method for producing a semiconductor appara-tus according to claim 5, wherein the support sub-strate and the semiconductor chip substrate are dif-ferent from each other in at least either size or shape.

7. The method for producing a semiconductor appara-tus according to claim 5, wherein the plurality of sem-iconductor chips include a plurality of semiconductorchips that are different in at least either plan viewdimensions or thickness.

8. The method for producing a semiconductor appara-tus according to claim 5, wherein the plurality of sem-iconductor chips in which the second main face isbonded to the second support substrate are collec-tively bonded to the first support substrate in thebonding process.

9. The method for producing a semiconductor appara-tus according to claim 5, comprising a process offorming a groove on the support substrate along adicing line at a time of cutting the joined wafer beforebonding the semiconductor circuit sections.

10. The method for producing a semiconductor appara-tus according to claim 5, comprising a process ofpatterning the adhesive layer, whereinthe semiconductor chips are bonded to the supportsubstrate via the patterned adhesive layer.

11. The method for producing a semiconductor appara-tus according to claim 5, whereinthe semiconductor circuit sections are light receivingsections of a solid-state image pickup device; andthe support substrate and the adhesive layer aretransparent.

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REFERENCES CITED IN THE DESCRIPTION

This list of references cited by the applicant is for the reader’s convenience only. It does not form part of the Europeanpatent document. Even though great care has been taken in compiling the references, errors or omissions cannot beexcluded and the EPO disclaims all liability in this regard.

Patent documents cited in the description

• JP 2011243596 A [0005] • JP 2012123223 A [0107]