17/06/2015 p. 1 KATHOLIEKE UNIVERSITEIT LEUVEN © Bart Nauwelaers 2004 Overview of Leuven Modeling...

© Bart Nauwelaers 2004 18/04/23 p. 1

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Overview of Leuven Modeling and Design Activities

B. Nauwelaers & D. Schreurs

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© Bart Nauwelaers 2004 18/04/23 p. 2BIL02/35-MOS-AK.ppt

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Co-operation between Stellenbosch and Leuven

Fits in the framework of the project BIL02-35 bilateral co-opertion agreement between Flanders and South-Africa

"Development of advanced CAD tools for accurate linear and non-linear RF modelling of 0.1 m CMOS

devices"

Idea: Stimulate co-operation between two 'countries' (SA – Flanders)

Partners: University of Stellenbosch (Cornell Van Niekerk) K.U.Leuven (B. Nauwelaers, D. Schreurs) IMEC (S. Decoutere)

Time frame: 2003-2004

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Modelling activities at K.U.Leuven, ESAT-TELEMIC

Devices and circuits: Passive components (Si, high-Q, III-V, MEMS) Interconnects and packaging (on-chip interconnects, BGA, PSGA,

NQFP, …) Active devices (FET, HEMT, bipolar, Si, III-V) Circuits… design

! Many of the activities in close co-operation with different divisions of IMEC

Antennas Propagation

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Outline

Passives in RF-circuits Modeling Si-passives Modeling MCM-passives Modeling package interconnects

Active RF-circuits Modeling with equivalent circuits Modeling with state-space models

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de co up lin g

filte ring

em itte r de ge ne ra tio n

tun ed lo ad

im pe da nce m a tch in g

Passives in RF-circuits

Functions in RF circuits :

C

C1

2

C

C

1

C 23

R F in

b ia sne tw ork

V c c

Vc cV b b

C 1

C 2

RER

E

50

50 Cc

Pin

Vc c

Vb b

LN A VCO

PA filter

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Modeling Si-passives: integrated inductors

Compromise simplicity-accuracy : two-section model

Shield simplifies model

extracted

modeled

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Physics-based:No fitting factorsDefined even for inductors with incomplete inner/outer turn

Insight into contribution of different physical mechanisms Closed-form for a given number of turns High accuracy Good scalability

Modeling Si-passives: integrated inductors

ser selfL L M M

)12(3

)1()123()(

i

ii

Nn

NNnswd

l

nd

l

nd

nd

l

nd

lnn

twn

llL

441

441ln)1(47.02.0

)(ln

2

22

0

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Modeling Si-passives

Silicon is a bad material!

ed d y c u rren ts

d isp la c em e n t cu rre n ts

p+

G N D

G N D

p ro x im ity e ffec t

sk in e ffec t

sk in e ffec t

ra d ia tio n

co u p lin g th ro u g h o x id e

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Modeling Si-passives: integrated resistors with shielding

oxide (PMD)

oxide (fie ld)

oxide (IMD)

n+ n+

salic idessa lic ides

1 1'

S inkS ink

G ND G ND

(Bi)CMOS implementation : novelty of the shield

contacts poly-m etal

S ignalOUT

oxide

contacts S ink-m eta l

S ignalI N

po ly

1 '1

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Modeling Si-passives: integrated resistors with shielding

Reduced dissipative losses for metal interconnects= extreme case of resistor

1.0

1.5

2.0

2.5

3.0

108 109 1010

Dissipative losses [dB/mm]

no shieldshield

f [Hz]

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Modeling MCM-passives

BCB-capacitors (series and shunt-to-ground) Ta2O5-capacitors (series and shunt-to-ground)

CPW transmission lines on 3 metal levels TaN-resistors: single and meandered Spiral inductors Vias between metal layers Discontinuities: bridges, T-junctions, X-junctions

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Modeling MCM-passives: spiral inductors

Layout Multi-turn circular Coplanar fashion: signal and ground-plane on the same metal level Inner-to-outer connection using top metal layer

Inductor range 600 pH - 80 nH optimized for high Q

wider lines, larger slots and slot-to-ground optimized for low cost (small size)

smaller lines and slots Higher order model used

implementation: table based model 2 sections

valid up to higher frequencies beyond short to open resonance

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Modeling MCM-passives: model library

Design synchronisation

ComponentLibrary

Parameterizedcomponents

HP-ADS

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Modeling MCM-passives: TaN-resistor

RESseriescmp1Lres=30 umWres=40 umwidth=77 umslot=20 umRsheet=25 OhmModels="GG=117,width=77"

Intrinsic resistor

1 2 3 4 5

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Modeling MCM-passives: power divider example

Measured versus simulated results,

MCM-D design library

3 T-junctions, 15 bends, 18 CPW-sections, 1 resistor

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LNA - 5.25 GHz (ISM band) applications

Gain of chip = 7.39 dB

Gain after Packaging = 5.58 dB

Gain

dB

____ Before Packaging ____ After Packaging

Modeling package-interconnects: why?

PCB

Package Substrate

DieMould Compound

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PCB

Package Substrate

Die

2-port measurement using the MCM-on-Package-on-MCM method

PCB and Die fabricated using IMEC’s MCM-D thin-film technology

“Package Interconnect”

Modeling package-interconnects: why/how?

Micro BGA (Ball Grid Array) PSGA (Polymer Stud Grid Array) NQFP (No-lead Quad Flat Pack)

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Arun C – MCP/MaRS, 28 May 2004, IMEC

|Sijmeas-Sijmodel|

Signal Path

Ground

|Sijmeas-Sijmodel|

Modeling package-interconnects: … then model it (PSGA)!

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Return Loss dB

Insertion Loss dB

On-chip compensation using a lumped capacitor

On-package compensation using an open stub

On-PCB compensation using an inductive feed line

Hybrid Compensation

Modeling package-interconnects:… and use the model for compensation

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10 source resistance and 50 load resistance

50 ps rise time step input

10 source resistance and 2 pF load capacitance

50 ps rise time step input

Severe Signal Integrity (SI) problem for unterminated package interconnects

Modeling package-interconnects:… and for time-domain predictions

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Outline

Passives in RF-circuits Modeling Si-passives Modeling MCM-passives Modeling package interconnects

Active RF-circuits Modeling with equivalent circuits Modeling with state-space models

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Pad and transmission line parasitic effects

Modeling transistors: equivalent circuit – intrinsic, extrinsic and pads

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Substrate Effects

Base distributed nature

Modeling transistors: equivalent circuit - intrinsic part

Has been done for: GaAs FET GaAs HEMT, PHEMT InP HEMTs Si MOSFET Si BJT …

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Analytical direct extraction Optimizer-based data fitting

Modeling transistors: equivalent circuit extraction or optimization

Substrate Effects

Base distributed nature

Extract the model parameters by solving analytical expressions

Simple Can lead to frequency-dependent

elements

Determine the model parameters by finding a set of parameters that minimize some error function

Higher accuracy More calculation time

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Modeling transistors: equivalent circuit extraction or optimization Works well!

Lin-models are basis for non-linear models through integration!

See also C. Van Niekerk in afternoon talk!

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For a two-port:

collect D.U.T. data in time-domain format (LSNA meas.) find number of independent variables find functional relationships f1(.) and f2(.) by training ANN implement in circuit simulator evaluate accuracy at

device level circuit level

See also talk 3 (Hany Taher on LDMOS)

1 1 1 2 1 2 1 2 1 2

2 2 1 2 1 2 1 2 1 2

( ), ( ), ( ), ( ), ( ), ( ), , ( ), ( ),

( ), ( ), ( ), ( ), ( ), ( ), , ( ), ( ),

I t f V t V t V t V t V t V t I t I t

I t f V t V t V t V t V t V t I t I t

Modeling transistors: state-space model

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Modeling transistors: state-space model verified at circuit level

topology: feedback CPW lay-out one thin-film MHEMT frequency dependent feedback

loop RFB trade-off between gain,

bandwidth and reflection

S21: 9 dB ( 0.5 dB) BW: 1–13 GHz note: low total gm (70 mS) of

100 m transistor2 4 6 8 10 12 140 16

6

8

10

12

4

14

Frequency [GHz]

S21 [dB

]

Vds = 1 V; Vgs = -0.4 V

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small-signal gain & P1dB

Small-signal gain

9.5 dB

10 dB

Measurement

Simulation

P1dB

-4.5 dBm

-4.9 dBm

Vds = 1 V; Vgs = -0.4 V; frequency = 1 GHz

15

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Gate current Drain currentVds = 1 V; Vgs = -0.4 V; frequency = 1 GHz Vds = 1 V; Vgs = -0.4 V; frequency = 1 GHz


large-signal amplifier simulation/measurement

Pin = -23 dBm; -11 dBm; -1 dBm

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Conclusions

ESAT-TELEMIC is a component and device modeler... and a circuit modeler?

Passive models: Based on physical insight Based on some calculations Based on some simulations Based on measurements and extraction/optimization

Active models: Used to be based on physical insight Also black box models Even more based on measurements

Both for passive and active: Always a balance between complexity, accuracy, efficiency while

constructing the model, while using the model Frequency as well as time domain is important

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The end

Thanks for your kind attention!

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MCM-concept: package = embedding substrate of the passives integrate passives omit external components as much as possible

Advantage to single-chip allows various components in different technologies to be integrated

Requirements … integrated passives design library

Substrate

CPW-line Feedthrough

Metal Hood

Flippedchip Bonded

chip

BCB dielectric

CHIP

CPW-line Feedthrough

CHIP

Integratedpassive e.g. aspiral inductor

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R

LC

BC B

C HIP

G la ss

TaN-resistor model Spiral inductor model

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--- Row1

--- Row2

--- Row3

--- Row4

5-Row BGA

--- Row5

Return Loss dB

Insertion Loss dB

Better

Better

Modeling package-interconnects: first measure it (BGA)

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Modeling transistors: state-space modeling applied to…

Thin-film MHEMT

17/06/2015 p. 1 KATHOLIEKE UNIVERSITEIT LEUVEN © Bart Nauwelaers 2004 Overview of Leuven Modeling...

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Transcript of 17/06/2015 p. 1 KATHOLIEKE UNIVERSITEIT LEUVEN © Bart Nauwelaers 2004 Overview of Leuven Modeling...