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2001 Fairchild Semiconductor Corporation Rev. A1, February 2001

MJE13006/

13007

NPN Silicon Transistor

Absolute Maximum Ratings TC=25Cunless otherwise noted

Electrical Characteristics TC=25Cunless otherwise noted

* Pulse test: PW300s, Duty cycle2%

Symbol Parameter Value Units

VCBO

Collector-Base Voltage : MJE13006

: MJE13007

600

700

V

V

VCEO

Collector-Emitter Voltage : MJE13006

: MJE13007

300

400

V

V

VEBO Emitter- Base Voltage 9 V

IC Collector Current (DC) 8 A

ICP Collector Current (Pulse) 16 A

IB Base Current 4 A

PC Collector Dissipation (TC=25C) 80 W

TJ Junction Temperature 150 C

TSTG Storage Temperature - 65 ~ 150 C

Symbol Parameter Test Condition Min. Typ. Max. Units

BVCEO Collector- Emitter Breakdown Voltage

: MJE13006

: MJE13007

IC = 10mA, IB = 0 300

400

V

V

IEBO Emitter Cut-off Current VEB = 9V, IC = 0 1 mA

hFE *DC Current Gain

VCE = 5V, IC = 2A

VCE = 5V, IC = 5A

8

5

60

30

VCE(sat) *Collector-Emitter Saturation Voltage IC = 2A, IB = 0.4A

IC = 5A, IB = 1A

IC = 8A, IB = 2A

1

2

3

V

V

V

VBE(sat) *Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A

IC = 5A, IB = 1A

1.2

1.6

V

VCob Output Capacitance VCB = 10V, f = 0.1MHz 110 pF

fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 4 MHz

tON Turn ON Time VCC = 125V, IC = 5A

IB1= -IB2= 1A

RL= 50

1.6 s

tSTG Storage Time 3 s

tF Fall Time 0.7 s

MJE13006/13007

High Voltage Switch Mode Application High Speed Switching

Suitable for Switching Regulator and Motor Control

1.Base 2.Collector 3.Emitter

1 TO-220

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2001 Fairchild Semiconductor Corporation

MJE13006/

13007

Rev. A1, February 2001

Typical Characteristics

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 3. Collector Output Capacitance Figure 4. Turn On Time

Figure 5. Turn Off Time Figure 6. Safe Operating Area

0.1 1 101

10

100

VCE

= 5V

hFE,

DCCURRENTGAIN

IC[A], COLLECTOR CURRENT

0.1 1 10 1000.01

0.1

1

10

IC= 3 I

B

VCE

(sat)

VBE

(sat)

VBE

(sat),

VCE

(sat)[V],SATURATIONVO

LTAGE


0.1 1 10 100 10001

10

100

1000

Cob

[pF],OUTPUTCAPACITANCE

VCB

[V], COLLECTOR-BASE VOLTAGE

0.1 1 1010

100

1000

VCC

=125V

IC=5I

B

tD, V

BE(off)=5V

tR

tR,

tD[s],TURNONTIME


0.1 1 1010

100

1000

10000

VCC

=125V

IC=5I

B

tF

tSTG

tSTG,

tF[s],TURNOFFTIME


1 10 100 10000.01

0.1

1

10

100

MJE13006

MJE13007

100s1m

sDC

IC[A],COLLECTORCURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

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2001 Fairchild Semiconductor Corporation

MJE13006/

13007

Rev. A1, February 2001

Typical Characteristics(Continued)

Figure 7. Power Derating

0 25 50 75 100 125 150 1750

10

20

30

40

50

60

70

80

90

100

PC

[W],POWERDISSIPATION

TC[oC], CASE TEMPERATURE

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4.50 0.209.90 0.20

1.52 0.10

0.80 0.10 2.40 0.20

10.00 0.20

1.27 0.10

3.60 0.10

(8.70)

2.8

00.1

0

15.9

00.2

0

10.0

80.3

0

18.9

5MAX.

(1.7

0)

(3.7

0)

(3.0

0)

(1.4

6)

(1.0

0)

(45)

9.2

00.2

0

13.0

80.2

0

1.3

00.1

0

1.30+0.100.05

0.50+0.100.05

2.54TYP

[2.54 0.20]

2.54TYP

[2.54 0.20]

TO-220

Package Demensions

2001 Fairchild Semiconductor Corporation Rev. A1, February 2001

MJE13006/

13007

Dimensions in Millimeters

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2001 Fairchild Semiconductor Corporation Rev. G

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

INTERNATIONAL.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

ACEx

BottomlessCoolFET

CROSSVOLT

DOME

E2CMOS

EnSigna

FACT

FACT Quiet Series

FAST

FASTr

GlobalOptoisolatorGTO

HiSeC

ISOPLANAR

MICROWIRE

OPTOLOGIC

OPTOPLANAR

PACMAN

POP

PowerTrench

QFETQS

QT Optoelectronics

Quiet Series

LILENT SWITCHER

SMART START

SuperSOT-3

SuperSOT-6

SuperSOT-8

SyncFET

TinyLogicVCX

UHC

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13007

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